JP5691138B2 - 電界効果トランジスタ及びその製造方法 - Google Patents

電界効果トランジスタ及びその製造方法 Download PDF

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JP5691138B2
JP5691138B2 JP2009108571A JP2009108571A JP5691138B2 JP 5691138 B2 JP5691138 B2 JP 5691138B2 JP 2009108571 A JP2009108571 A JP 2009108571A JP 2009108571 A JP2009108571 A JP 2009108571A JP 5691138 B2 JP5691138 B2 JP 5691138B2
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nitride semiconductor
semiconductor layer
layer
etching
gate contact
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JP2010258313A5 (enExample
JP2010258313A (ja
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雄治 大巻
雄治 大巻
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Nichia Corp
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Nichia Corp
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JP2009108571A 2009-04-28 2009-04-28 電界効果トランジスタ及びその製造方法 Active JP5691138B2 (ja)

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JP2010258313A JP2010258313A (ja) 2010-11-11
JP2010258313A5 JP2010258313A5 (enExample) 2012-05-31
JP5691138B2 true JP5691138B2 (ja) 2015-04-01

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013011617A1 (ja) * 2011-07-15 2013-01-24 パナソニック株式会社 半導体装置及びその製造方法
JP2013074179A (ja) * 2011-09-28 2013-04-22 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP6330148B2 (ja) 2013-05-24 2018-05-30 パナソニックＩｐマネジメント株式会社 半導体装置
KR102145914B1 (ko) * 2014-02-21 2020-08-19 엘지이노텍 주식회사 반도체 소자
JP6767741B2 (ja) * 2015-10-08 2020-10-14 ローム株式会社 窒化物半導体装置およびその製造方法
JP6859646B2 (ja) * 2016-09-29 2021-04-14 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法、電源装置、及び増幅器
KR102630424B1 (ko) * 2017-06-15 2024-01-29 이피션트 파워 컨버젼 코퍼레이션 GaN 스페이서 두께의 향상된 균일성을 위한 선택적 및 비선택적 에칭 층을 갖는 인핸스먼트-모드 GaN 트랜지스터
JP7201571B2 (ja) * 2018-12-12 2023-01-10 クアーズテック株式会社 窒化物半導体基板および窒化物半導体装置
JP6941903B1 (ja) * 2021-02-15 2021-09-29 株式会社パウデック ノーマリーオフ型分極超接合ＧａＮ系電界効果トランジスタおよび電気機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4041075B2 (ja) * 2004-02-27 2008-01-30 株式会社東芝 半導体装置
JP4832722B2 (ja) * 2004-03-24 2011-12-07 日本碍子株式会社 半導体積層構造およびトランジスタ素子
US20070018199A1 (en) * 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
JP4751150B2 (ja) * 2005-08-31 2011-08-17 株式会社東芝 窒化物系半導体装置
JP4705482B2 (ja) * 2006-01-27 2011-06-22 パナソニック株式会社 トランジスタ

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