JP5690985B2 - Support apparatus and etching method - Google Patents

Description

  The present invention relates to a support device and an etching method.

  Conventionally, as one method of processing the surface of an object to be processed (glass, crystal, silicon wafer, etc.), an etching solution delivered from a nozzle is locally supplied to the surface to be processed of the object to be processed. There is known so-called local wet etching in which an etching process is performed on the entire surface of a processing object by moving the processing object relatively (for example, Patent Document 1).

  The surface processing apparatus described in Patent Document 1 has a nozzle assembly having a plurality of nozzles arranged in a row, and the nozzle assembly includes a plurality of nozzles along the surface to be processed of the object to be processed. It is possible to move in a direction perpendicular to the arrangement direction. An etching solution is delivered from each nozzle, and the temperature of the etching solution delivered from the nozzle can be controlled for each nozzle. In such a surface processing apparatus, the nozzle assembly is moved along the surface to be processed while feeding the etching solution at a desired temperature from each nozzle (that is, while supplying the etching solution to the surface to be processed). A desired etching process can be performed on the object to be processed.

  Although not described in Patent Document 1, the etching process as described above is normally performed in a state where the object to be processed is fixed to the chucking plate by air chucking. Therefore, for example, when the nozzle assembly is positioned at the edge of the surface to be processed, a part of the etching solution sent from each nozzle is not supplied to the surface to be processed, but is transmitted along the side surface of the object to be processed. There is a possibility of moving to the surface opposite to the surface to be processed and entering between the chucking plate and the object to be processed. When the etchant enters between the chucking plate and the object to be processed, an unintentional etching process is performed on the surface of the object to be processed opposite to the surface to be processed, and the shape of the object to be processed after the etching process There is a problem that (especially the thickness) is greatly different from the desired shape.

JP 2007-200754 A

  An object of the present invention is to provide a support device and an etching method capable of preventing or suppressing unintentional etching on an object to be processed and performing a desired etching process on the object to be processed.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
[Application Example 1]
The support device of the present invention is a support device that supports the object to be processed when a desired etching process is performed on the object to be processed by supplying an etching solution to the object to be processed.
A support surface for supporting the back side of the surface to be processed of the object to be processed;
A support base having an opening at a position overlapping with at least a part of the edge of the object to be processed in plan view in a state where the object to be processed is supported on the support surface by opening to the support surface ; ,
And a suction means for sucking the etching solution from the opening .
Thereby, the support apparatus which can prevent or suppress the unintentional etching with respect to a to-be-processed object, and can perform a desired etching process with respect to a to-be-processed object can be provided.

[Application Example 2]
The support device of the present invention is a support device that supports the object to be processed when a desired etching process is performed on the object to be processed by supplying an etching solution to the object to be processed.
A support surface for supporting the back side of the surface to be processed of the object to be processed;
In a state where the object to be processed is supported on the support surface by opening to the support surface, a part of the edge of the object to be processed overlaps in plan view, and the other part is separated from the edge of the object to be processed. An opening at a position exposed to the outside, a support base,
Injecting means for injecting gas from the opening.

[Application Example 3 ]
In the support device according to the aspect of the invention, it is preferable that the ejection direction of the gas ejected from the opening portion is inclined toward the outside of the object to be processed in a plan view with respect to the normal direction of the support surface. .

[Application Example 4 ]
In the support device of the present invention, it is preferable that the opening has a groove shape.

[Application Example 5 ]
In the support device of the present invention, it is preferable that the opening extends in a direction along an edge of the object to be processed in the plan view.

[Application Example 6 ]
In the support device of the present invention, it is preferable that the opening is formed over the entire periphery of the edge of the object to be processed.

[Application Example 7 ]
In the support apparatus of this invention, it is preferable to have a fixing means which fixes the said to-be-processed object to the said support surface.

[Application Example 8 ]
In the support device of the present invention, it is preferable that the fixing means includes at least one intake hole that opens to the support surface, and a suction pump that decompresses the inside of the intake hole.

[Application Example 9 ]
The etching method of the present invention includes a supporting step of supporting the back surface side of the processing surface of the processing object on the supporting surface;
An etching step of performing a desired etching process on the object to be processed by supplying an etching solution to the object to be processed,
In the etching step, the etching solution is sucked from an opening formed at a position that opens to the support surface and overlaps at least a part of the edge of the supported object to be processed in plan view. Features.
Thereby, the etching method which can prevent or suppress the unintentional etching with respect to a to-be-processed object, and can perform a desired etching process with respect to a to-be-processed object can be provided.

[Application Example 10]
The etching method of the present invention includes a supporting step of supporting the back surface side of the processing surface of the processing object on the supporting surface;
An etching step of performing a desired etching process on the object to be processed by supplying an etching solution to the object to be processed,
In the etching step, the support surface is opened, a part of the edge of the supported workpiece is overlapped, and the other part is formed at a position exposed to the outside from the edge of the workpiece. Gas is ejected from the opening.
Thereby, the etching method which can prevent or suppress the unintentional etching with respect to a to-be-processed object, and can perform a desired etching process with respect to a to-be-processed object can be provided.

It is a figure which shows 1st Embodiment of a surface processing apparatus provided with the support apparatus of this invention. It is a top view of the chucking plate with which the surface processing apparatus shown in FIG. 1 is provided. It is an expanded sectional view of the chucking plate shown in FIG. It is a block diagram which shows the structure of the control part which the surface processing apparatus shown in FIG. 1 has. It is an expanded sectional view of the chucking plate shown in FIG. It is a figure which shows the modification of the surface processing apparatus shown in FIG. It is a figure which shows the modification of the surface processing apparatus shown in FIG. It is a figure which shows the modification of the surface processing apparatus shown in FIG. It is a figure which shows 2nd Embodiment of a surface processing apparatus provided with the support apparatus of this invention. It is a partial expanded sectional view of the chucking plate with which the surface processing apparatus shown in FIG. 9 is provided. It is a figure which shows 3rd Embodiment of a surface processing apparatus provided with the support apparatus of this invention. It is a partial expanded sectional view which shows 4th Embodiment of a surface processing apparatus provided with the support apparatus of this invention. It is a partial expanded sectional view which shows 5th Embodiment of a surface processing apparatus provided with the support apparatus of this invention.

Hereinafter, a supporting device and an etching method of the present invention will be described in detail based on embodiments shown in the accompanying drawings.
First, a surface processing apparatus provided with the support apparatus of this invention is demonstrated.
FIG. 1 is a diagram showing a first embodiment of a surface processing apparatus provided with a support device of the present invention, FIG. 2 is a plan view of a chucking plate provided in the surface processing apparatus shown in FIG. 1, and FIG. 4 is an enlarged cross-sectional view of the chucking plate shown in FIG. 4, FIG. 4 is a block diagram showing the configuration of the control unit of the surface processing apparatus shown in FIG. 1, FIG. 5 is an enlarged cross-sectional view of the chucking plate shown in FIG. FIG. 8 is a view showing a modification of the surface processing apparatus shown in FIG. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

The surface processing apparatus 1 is an apparatus that performs a desired etching process on a workpiece (object to be processed) 10 by local wet etching.
Although it does not specifically limit as a constituent material of the workpiece | work 10, For example, various glass, such as quartz glass and an alkali free glass, crystalline materials, such as quartz, various ceramics, such as an alumina, a silica, a titania, silicon, gallium arsenic, etc. Various semiconductor materials, carbon-based materials such as diamond and graphite, polyethylene, polystyrene, polycarbonate, polyethylene terephthalate, liquid crystal polymer, phenol resin, acrylic resin, and other dielectric materials such as plastic materials Examples include various metal materials such as aluminum, copper, and iron-based metals.
Moreover, the shape of the workpiece | work 10 is not specifically limited, For example, plate shape, a block shape, etc. may be sufficient. Moreover, it does not specifically limit as a planar view shape of the workpiece | work 10, For example, a square, a rectangle, circular, etc. may be sufficient. In the following, for the convenience of explanation, the workpiece 10 having a plate shape and having a substantially square shape in plan view will be described as a representative.

  As shown in FIG. 1, the surface processing apparatus 1 includes a supporting device 2 (supporting device of the present invention) 2 that supports a workpiece 10, and an etching solution supply unit 7 that supplies an etching solution to a surface 101 of the workpiece 10. Have. Further, the support device 2 includes a chucking plate (support base) 3 that supports the workpiece 10, a suction hole 4 that opens to the support surface 31 of the chucking plate 3, and the suction hole 4 is decompressed and etched from the suction hole 4. A suction means 5 for sucking the liquid and a fixing means 6 for fixing the workpiece 10 to the chucking plate 3 are provided.

  The surface processing apparatus 1 operates the suction means 5 while supplying the etching liquid to the surface 101 of the workpiece 10 by the etching liquid supply means 7 while the work 10 is fixed to the chucking plate 3 by the fixing means 6. The suction hole 4 is depressurized by suction, and the etching solution that has circulated from the suction hole 4 to the surface opposite to the surface to be processed 101 (hereinafter also referred to as “back surface 102”) is sucked into the workpiece 10. It is a device that performs processing.

Hereinafter, the support device 2 and the etching solution supply means 7 will be described in detail sequentially.
First, the support device 2 will be described.
As described above, the support device 2 includes the chucking plate 3, the suction hole 4, the suction unit 5, and the fixing unit 6.
As shown in FIG. 1, the chucking plate 3 has a plate shape. Moreover, as shown in FIG. 2, the planar view shape of the chucking plate 3 is a substantially rectangular shape. However, the shape of the chucking plate 3 is not particularly limited as long as the workpiece 10 can be placed. For example, the chucking plate 3 may not be a plate shape, and the planar view shape may be a square, a circle, an irregular shape, or the like. .

  The lower surface of the chucking plate 3 constitutes a support surface (chucking surface) 31 that supports the workpiece 10. The support surface 31 is preferably a flat surface. Thereby, when the workpiece 10 is supported on the support surface 31, it is possible to prevent the workpiece 10 from being deformed following the shape of the support surface 31. In addition, when the work 10 is supported on the support surface 31, it is difficult to form a gap between the support surface 31 and the work 10. Therefore, the work 10 is supported reliably and easily by the fixing means 6 using air chucking. It can be fixed to the surface 31.

Next, the suction hole 4 will be described.
The suction hole 4 is a hole for sucking the etching solution that has entered the back surface 102 of the workpiece 10 while the workpiece 10 is being etched. As shown in FIGS. 1 and 2, the suction hole 4 includes a groove portion 41 that opens to the support surface 31 and a plurality of slits (hole portions) 42 that open to the inner surface of the groove portion 41.

  As shown in FIG. 2, the groove portion 41 is formed along the edge portion of the workpiece 10 fixed to the support surface 31. Further, the groove 41 has an annular shape and is formed over the entire periphery of the edge of the workpiece 10. Thus, by forming the groove over the entire circumference of the edge of the workpiece 10, the etching solution that has entered the back 102 can be sucked from the suction hole 4 over the entire area of the edge of the back 102.

As shown in FIGS. 2 and 3, the groove 41 is formed so that a part thereof overlaps the workpiece 10. In other words, a part of the opening of the groove 41 is closed by the edge of the workpiece 10 fixed to the support surface 31. In other words, the groove portion 41 includes an inner periphery 411 included in the workpiece 10 (located inside the workpiece 10) and an outer periphery 412 included in the workpiece 10 in a state where the workpiece 10 is fixed to the support surface 31. It is formed so as not to be included (located outside the workpiece 10). As a result, the etching solution that has traveled along the side surface of the workpiece 10 and has traveled to the back surface 102 wets and spreads directly under the opening of the groove 41, so that the etching solution can be more reliably sucked from the suction hole 4.
Moreover, as shown in FIG. 3, the groove part 41 has a rectangular (rectangular) cross-sectional shape. In addition, it does not specifically limit as a cross-sectional shape of the groove part 41, For example, a semicircle may be sufficient and a triangle may be sufficient.

  Here, the width W of the groove 41 is not particularly limited, but is preferably 1 mm or more and 10 mm or less. By setting the width W in such a range, a part of the opening of the groove portion 41 can be covered with the edge portion of the workpiece 10 fixed to the support surface 31 relatively easily. That is, the work 10 fixed to the support surface 31 can more reliably prevent the entire opening of the groove 41 from being blocked or, on the contrary, the opening of the groove 41 not being blocked at all. it can. As a result, the etching solution that has entered the back surface 102 can be efficiently sucked from the suction hole 4. In addition, since the internal space (volume) of the groove portion 41 can be made relatively small, the inside of the groove portion 41 can be decompressed with relatively little energy when the suction means 5 is operated (ie, suction). The energy saving drive of means 5 can be performed).

  Further, the depth D of the groove 41 is not particularly limited, but is preferably about 0.1 mm or more and 1 mm or less. By setting the depth D in such a range, it is possible to more reliably cause the etching solution that attempts to enter the back surface 102 to enter the groove 41 (directly below the groove 41). In addition, since the internal space (volume) of the groove 41 can be made relatively small, the inside of the groove 41 can be decompressed with relatively little energy when the suction means 5 is operated.

  Further, the length L of the portion overlapping the groove portion 41 of the workpiece 10 (the portion protruding on the groove portion 41) is not particularly limited, but is preferably about 0.5 mm or more and 5 mm or less, for example. By setting the length L within such a range, the etching solution that has entered the back surface 102 of the workpiece 10 can be quickly sucked from the suction hole 4. In other words, it is possible to prevent the etchant from remaining on the back surface 102. Therefore, it is possible to prevent unintentional etching on the back surface 102.

As shown in FIGS. 2 and 3, each slit 42 has a longitudinal shape in plan view of the chucking plate 3 and is formed along the extending direction (circumferential direction) of the groove portion 41. Each slit 42 is provided so as to penetrate the bottom surface of the groove portion 41 and the upper surface of the chucking plate 3 (the surface opposite to the support surface 31).
Each slit 42 is formed so as to be included in the workpiece 10 fixed to the support surface 31 in a plan view of the chucking plate 3. That is, since the opening of each slit 42 is located immediately above the back surface 102 of the workpiece 10, the etching solution that has entered the back surface 102 can be reliably sucked by the suction hole 4.

Here, the width W1 of each slit 42 is not particularly limited, but is preferably about 0.5 mm or more and 5 mm or less, for example. By setting W1 in such a range, the internal space of each slit 42 can be made relatively small. Therefore, when the suction means 5 is operated, the inside of each slit 42 can be decompressed with relatively little energy. it can. Therefore, the etching solution that has entered the back surface 102 can be efficiently sucked from the suction hole 4.
The suction hole 4 has been described above. By configuring the suction hole 4 with the groove portion 41 and the slit 42 as in this embodiment, the internal space of the suction hole 4 can be further reduced. Therefore, the inside of the suction hole 4 can be easily decompressed, and the etching solution that has entered the back surface 102 can be efficiently sucked.

Next, the suction unit 5 will be described.
The suction means 5 uses some of the constituent elements of an etchant circulation device 73 described later that the etchant supply means 7 has. In other words, the etching liquid circulation device 73 also serves as the suction means 5. As shown in FIG. 1, the suction means 5 includes a recovery pipe 738 that communicates the suction hole 4 and the storage tank 733, and a suction pump 737 that decompresses the storage tank 733. Such a suction means 5 operates the suction pump 737 to depressurize the storage tank 733, thereby depressurizing the inside of the collection pipe 738 and the suction hole 4. The etching solution (etching solution which tries to enter between the chucking plate 3 and the workpiece 10) is sucked.

Next, the fixing means 6 will be described.
The fixing means 6 has a function of fixing the workpiece 10 to the support surface 31. By fixing the workpiece 10 to the support surface 31, the posture and position of the workpiece 10 with respect to the chucking plate 3 can be kept constant during the etching process, so that a desired etching process can be performed on the workpiece 10. In particular, in the surface processing apparatus 1 as in the present embodiment, since the workpiece 10 is supported so as to be suspended from the chucking plate 3, the fixing means 6 can prevent the workpiece 10 from falling from the chucking plate 3. it can.

  As shown in FIG. 1, the fixing means 6 has a plurality of intake holes 61 opened to the support surface 31 of the chucking plate 3, and a suction pump 62 connected to each intake hole 61. As shown in FIG. 2, the plurality of intake holes 61 are arranged in a matrix. Further, the opening of each intake hole 61 is closed by the work 10 in a state where the work 10 is supported by the support surface 31. Such a fixing means 6 fixes the work 10 to the support surface 31 by operating the suction pump 62 in a state where the work 10 is supported on the support surface 31 and reducing the pressure in each intake hole 61. According to the fixing means 6 having such a configuration, the workpiece 10 can be easily fixed to the support surface 31. Further, the workpiece 10 can be easily detached from the support surface 31 simply by returning the inside of the intake hole 61 to normal pressure.

Next, the etching solution supply means 7 will be described.
The etching solution supply means 7 has a function of supplying an etching solution to the processing target surface 101 of the workpiece 10 and performing a desired etching process on the workpiece 10. As shown in FIG. 1, the etching solution supply means 7 includes a nozzle 71 movably provided along the surface to be processed 101 of the workpiece 10, a control unit 72 that controls the movement of the nozzle 71, and an etching solution. And an etchant circulation device 73 that is sent from 71 and collected.

The nozzle 71 is provided below the chucking plate 3. The nozzle 71 has an outer tube 711 and an inner tube 712 provided therein. In the nozzle 71, the etching solution is sent from the upper end of the nozzle 71 through the inner tube 712 and is collected through the gap 713 between the inner tube 712 and the outer tube 711.
The etching liquid circulation device 73 includes a delivery pipe 731 for sending the etching liquid from the nozzle 71, a collecting pipe 732 for collecting the etching liquid from the nozzle 71, a collecting pipe 738 for collecting the etching liquid from the suction hole 4, and an etching liquid. A storage tank 733 for storing, a liquid feed pump 734 for sending the etching liquid from the storage tank 733 to the delivery pipe 731, a flow rate adjusting valve 735 and a flow meter 736 for adjusting the flow rate of the etching liquid sent to the delivery pipe 731, a workpiece And a suction pump 737 for sucking and collecting the etching solution adhering to the surface to be processed 101 and the etching solution having entered the back surface 102.

  These devices are connected in the order of a storage tank 733, a liquid feed pump 734, a flow rate adjustment valve 735, a flow meter 736, a delivery pipe 731 (nozzle 71), recovery pipes 732, 738, and the recovery pipes 732, 738 and the storage tank 733 are connected. Is connected to form a circulation path. The suction pump 737 sucks the etching solution from the outer tube 711 (gap 713) and sucks the etching solution from the suction hole 4 by reducing the pressure in the storage tank 733. As the delivery pipe 731 and the collection pipe 732, those having flexibility so as to follow the movement of the nozzle 71 are used. Further, all the portions that come into contact with the etching solution are made of a material that is not corroded by the etching solution.

As illustrated in FIG. 4, the control unit 72 stores a nozzle moving device 721 that moves the nozzle 71 in a plane (on the processing target surface 101), and a profile of the surface of the workpiece 10 before and after processing. The storage unit 722, the two profiles and the etching amount (processing depth) per unit time of the etching solution, the calculation unit 723 that calculates the movement speed of the nozzle 71, and the movement speed of the nozzle 71 is controlled based on the calculation result. And a movement control unit 724 that controls the nozzle moving device 721 so as to keep the distance between the nozzle 71 and the workpiece 10 constant.
The surface processing apparatus 1 has been described above.

Next, the operation of the surface processing apparatus 1 (the etching method of the present invention) will be described.
[Test process]
First, before using the surface processing apparatus 1, as a preliminary experiment, a sample (test piece) made of the same material as the workpiece 10 is used, and an etching solution having a predetermined constant flow rate is sent from the nozzle 71 to the sample surface. The etching depth per unit time (etched depth) is obtained in advance. The etching depth is measured while moving the nozzle 71 at a constant speed. Then, by performing this measurement at a plurality of speeds, the relationship between the moving speed of the nozzle 71 and the etching depth can be obtained. If the processing depth to be etched at each point on the processing target surface 101 of the workpiece 10 is determined, the moving speed of the nozzle 71 can be determined from the relationship between the moving speed of the nozzle 71 and the processing depth obtained here.

[Process for measuring shape of workpiece 10 before etching]
Next, the profile before processing of the processing target surface 101 of the workpiece 10 is measured. This measurement can be performed using an existing surface shape measuring device or surface roughness measuring device. The obtained measurement result is stored in the storage unit 722 of the control unit 72. Next, the calculation unit 723 determines the target of the workpiece 10 based on the difference between the processed surface 101 of the workpiece 10 before processing and the target processed surface 101 of the workpiece 10 stored in the storage unit 722. An etching depth to be processed at each position on the processing surface 101 is calculated. The calculation unit 723 further calculates the moving speed of the nozzle 71 at each position on the processing surface 101 from the relationship between the moving speed of the nozzle 71 and the etching depth.

[Step of supporting workpiece 10]
Next, the workpiece 10 is supported on the chucking plate 3 (support surface 31) of the surface processing apparatus 1 so that the processing target surface 101 faces the nozzle 71, and the workpiece 10 is fixed to the support surface 31 by the fixing means 6. .
[Etching process]
Next, the nozzle 71 is moved to a position shifted from the processing surface 101 (a position not directly below the processing surface 101) by the nozzle moving device 721 included in the control unit 72. In this state, by operating the liquid feed pump 734 and adjusting the flow rate adjusting valve 735, the etching solution is sent from the storage tank 733 through the nozzle 71 at a predetermined constant flow rate. Immediately after the etching solution is sent out from the nozzle 71, the flow rate of the etching solution sent out from the nozzle 71 is likely to be unstable, so that the etching solution is kept in a state where the nozzle 71 is shifted from the lower side of the processing surface 101 as described above. It is preferable to maintain this state until the flow rate (delivery amount) of the etching solution is maintained at a predetermined flow rate.

  Next, the nozzle 71 is moved to a position facing the surface 101 to be processed, and the nozzle 71 is moved at a speed determined as described above by the nozzle moving device 721 controlled by the movement controller 724. For example, meander 101 is moved so as to pass through the entire area 101. At the same time, the suction pump 737 is operated to suck the etchant from the surface 101 to be processed of the workpiece 10 into the storage tank 733, and the etchant that has entered the back surface 102 of the workpiece 10 is sucked from the suction hole 4. Thereby, in the state where unintentional etching with respect to the back surface 102 is prevented, the above-described calculated depth to be processed is etched at each point of the surface to be processed 101 of the workpiece 10, and a desired profile is obtained. .

  Specifically, for example, when the nozzle 71 is positioned at the edge of the surface 101 to be processed, a part of the etching solution sent from the nozzle 71 is supplied to the surface 101 to be processed as shown in FIG. In some cases, the back surface 102 wraps around without being attached. In such a case, conventionally, the back surface 102 is etched by the etching solution that has entered the back surface 102, and the problem that the shape of the workpiece 10 after etching is different from the desired one, or the etching solution from the intake hole 61 is removed from the apparatus. There was a problem of intruding inside and corroding the device.

  However, according to the surface processing apparatus 1, the etching solution that has entered the back surface 102 can be quickly sucked from the suction holes 4. Therefore, it is possible to prevent the etching solution from adhering to the back surface 102 for a long time, and to prevent unintentional etching on the back surface 102. As a result, the shape of the workpiece 10 after etching can be made desired. In particular, since the thickness of the workpiece 10 after etching can be set to a desired thickness, for example, when the workpiece 10 has a frequency characteristic that greatly changes depending on the thickness, such as a quartz AT-cut plate. It is particularly effective.

Further, according to the surface processing apparatus 1, the etching solution that has entered the back surface 102 can be sucked from the suction hole 4 before entering between the back surface 102 and the support surface 31. Therefore, it is possible to prevent the etching solution from entering the intake hole 61 and to prevent various devices included in the fixing means 6 from being corroded by the etching solution.
Moreover, in this embodiment, since the etching liquid sucked from the suction hole 4 is collected in the storage tank 733, the etching liquid can be effectively used (reused). That is, according to the surface processing apparatus 1, the workpiece 10 can be etched at a low cost.
The surface processing apparatus 1 according to the first embodiment has been described above.

  In the first embodiment, the configuration in which the etching solution supply unit 7 has one nozzle 71 has been described. However, the configuration of the etching solution supply unit 7 is not limited to this. For example, as illustrated in FIG. It has a nozzle assembly 74 having a plurality of nozzles 71 arranged in a row, and the nozzle assembly 74 can move along the surface to be processed 101 of the workpiece 10 in a direction orthogonal to the arrangement direction of the nozzles 71. The structure which becomes may be sufficient. Also, as shown in FIG. 6B, a configuration using a nozzle assembly 74 in which a plurality of inner pipes 712 are arranged in a row and one outer pipe 711 is formed so as to cover the outer periphery of all the inner pipes 712. It may be.

  Moreover, although 1st Embodiment demonstrated the form in which the suction hole 4 has the cyclic | annular one groove part 41, as long as the number of the groove parts 41 can exhibit the function mentioned above, it will not be limited to this. For example, as shown in FIG. 7A, it may have four groove portions 41 provided so as to correspond to each side of the workpiece 10, or as shown in FIG. You may have the two groove | channel parts 41 of U shape. In FIG. 7, the intake holes 61 are not shown for convenience of explanation.

  In the first embodiment, the suction hole 4 has eight slits 42. However, the number of the slits 42 is not limited to this as long as the function as described above can be exhibited. For example, as shown in FIG. 7A, it may have four slits 42 provided so as to correspond to each side of the work 10, or as shown in FIG. Two U-shaped slits may be provided, or one annular slit 42 may be provided as shown in FIG. However, in the case shown in FIG. 8, the inside and the outside of the chucking plate 3 are separated by the suction hole 4, so it is necessary to take means for preventing this separation. In addition, in FIG. 8, illustration of the inlet hole 61 is abbreviate | omitted for convenience of explanation.

In the first embodiment, separate suction pumps 62 and 737 are used for the fixing means 6 and the etching liquid supply means 7, but one suction pump ( For example, a suction pump 737) may be used.
In the first embodiment, the etching solution sucked from the suction hole 4 is collected in the storage tank 733. However, the present invention is not limited to this, and the etching solution sucked from the suction hole 4 may be discarded. In this case, the suction means 5 may be provided separately from the etchant circulation device 73.

Second Embodiment
Next, 2nd Embodiment of a surface processing apparatus provided with the support apparatus of this invention is described.
FIG. 9 is a view showing a second embodiment of the surface processing apparatus including the support device of the present invention, and FIG. 10 is a partially enlarged sectional view of the chucking plate included in the surface processing apparatus shown in FIG.
Hereinafter, the surface processing apparatus according to the second embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted.
The surface processing apparatus according to the second embodiment of the present invention is the same as that of the first embodiment described above except that the method of removing the etching solution that has entered the back surface of the workpiece is different. In FIG. 9 and FIG. 10, the same reference numerals are given to the same configurations as those in the first embodiment described above.

  As shown in FIG. 9, the surface processing apparatus 1A of the second embodiment ejects gas from the ejection holes 9 formed in the chucking plate (support base) 3 and the ejection holes 9 (adds the inside of the ejection holes 9). Pressure). Such a surface processing apparatus 1 </ b> A is configured to remove the etching solution that has entered the back surface 102 by blowing off the gas (air stream) ejected from the ejection holes 9.

  The structure of the ejection hole 9 is the same as that of the suction hole 4 of the first embodiment described above. That is, as shown in FIGS. 9 and 10, the ejection hole 9 has an annular groove 91 that opens to the support surface 31 and a plurality of slits 92 that open to the inner surface of the groove 91. Respectively have the same configuration as the groove 41 and the slit 42 of the suction hole 4 of the first embodiment described above. Therefore, the description of the ejection hole 9 is omitted.

  The ejection means 8 includes a delivery pump 81 and a connecting pipe 82 that communicates the delivery pump 81 and each slit 92. Such a jetting unit 8 feeds a gas such as outside air into the jetting hole 9 through a connecting pipe 82 by a delivery pump, for example, and jets the fed gas from the jetting hole 9 toward the workpiece 10. The gas ejected from the ejection hole 9 generates an air current as shown by an arrow in FIG. 9, and a so-called air curtain is formed. As a result, the etching solution that has entered the back surface 102 can be removed by blowing off the airflow. Furthermore, it is possible to prevent the etching solution from entering the back surface 102 by the air flow.

In particular, the groove portion 91 is formed so that a part thereof overlaps the workpiece 10, and the slit 92 is formed so as to be included in the workpiece 10 fixed to the support surface 31 in a plan view of the chucking plate 3. Therefore, the gas ejected from the ejection hole 9 can be applied to the edge of the back surface 102 of the workpiece 10. Therefore, the effect mentioned above becomes more remarkable.
Further, since the groove portion 91 is formed over the entire area of the edge portion of the work 10 fixed to the support surface 31, the airflow can be generated over the entire area of the edge portion of the back surface 102 of the work 10. Therefore, the etchant can be removed over the entire edge of the back surface 102.
Next, the operation of the surface processing apparatus 1A (the etching method of the present invention) will be described. Note that [Test Step], [Shape Measurement Step of Work 10 before Etching], and [Step of Supporting Work 10] are the same as those in the first embodiment, and thus description thereof is omitted.

[Etching process]
A nozzle moving device 721 included in the control unit 72 moves the nozzle 71 to a position shifted from the processing surface 101 (a position not directly below the processing surface 101). In this state, by operating the liquid feed pump 734 and adjusting the flow rate adjusting valve 735, the etching solution is sent from the storage tank 733 through the nozzle 71 at a predetermined constant flow rate.

Next, the nozzle 71 is moved to a position facing the surface 101 to be processed, and the nozzle 71 is moved at a speed determined as described above by the nozzle moving device 721 controlled by the movement controller 724. For example, meander 101 is moved so as to pass through the entire area 101. At the same time, the suction pump 737 is operated to suck the etching solution from the processing target surface 101 of the workpiece 10 into the storage tank 733, and the delivery pump 81 is operated to cause gas to flow from the ejection hole 9 toward the back surface 102 of the workpiece 10. Erupt. As a result, the etchant that has entered the back surface 102 can be removed, and the above-described calculation is performed at each point on the processing target surface 101 of the workpiece 10 in a state where unintentional etching of the back surface 102 is prevented. Etching is performed to the depth to be processed to obtain a desired profile.
According to the second embodiment as described above, the same effect as that of the first embodiment can be exhibited.

<Third Embodiment>
Next, a third embodiment of the surface processing apparatus provided with the support device of the present invention will be described.
FIG. 11: is a figure which shows 3rd Embodiment of a surface processing apparatus provided with the support apparatus of this invention.
Hereinafter, the surface processing apparatus of the third embodiment will be described with a focus on differences from the above-described embodiments, and description of similar matters will be omitted.
The surface processing apparatus according to the third embodiment of the present invention is the same as the second embodiment described above except that the configuration of the ejection means is different. In FIG. 11, the same reference numerals are given to the same configurations as those of the first embodiment and the second embodiment described above.

  As shown in FIG. 11, the ejection means 8 </ b> B of the present embodiment includes a suction pump 62 included in the fixing means 6 and a connecting pipe 82 that connects the suction pump 62 and the ejection hole 9. In the ejection means 8B, the gas (air) sucked by the suction pump 62 when the workpiece 10 is fixed to the support surface 31 is ejected from the ejection hole 9 through the connecting pipe 82. .

  By making the ejection means 8B in such a configuration, the gas is ejected from the ejection hole 9 at the same time as being fixed to the support surface 31 of the workpiece 10, for example, forgetting to eject the gas from the ejection hole 9, Since it takes time from the time the work 10 is fixed to the time when the gas is ejected from the ejection hole 9, unintentional etching of the back surface 102 can be reliably prevented. . Moreover, the number of parts of the surface processing apparatus 1B can be reduced.

Further, a suction pump 737 for reducing the pressure in the storage tank 733 and the connecting pipe 82 may be connected, and the gas sucked by the suction pump 737 may be ejected from the ejection hole 9 via the connecting pipe 82. Thereby, since the flow velocity of the gas ejected from the ejection hole 9 can be further increased, the above-described effect becomes more remarkable.
According to the third embodiment as described above, the same effect as that of the first embodiment can be exhibited.

<Fourth embodiment>
Next, a fourth embodiment of the surface processing apparatus provided with the support device of the present invention will be described.
FIG. 12 is a partial enlarged cross-sectional view showing a fourth embodiment of the surface processing apparatus including the support device of the present invention.
Hereinafter, the surface processing apparatus according to the fourth embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted.
The surface processing apparatus according to the fourth embodiment of the present invention is the same as the above-described second embodiment except that the posture of the slits of the ejection holes is different. In FIG. 12, the same reference numerals are given to the same configurations as those in the first embodiment and the second embodiment described above.

As shown in FIG. 12, in the surface processing apparatus 1 </ b> C of the present embodiment, the slit 92 </ b> C included in the ejection hole 9 is inclined so that the opening on the groove 91 side faces the outside of the workpiece 10 with respect to the normal line of the support surface 31. ing. And gas is jetted toward the edge of the workpiece | work 10 from opening of the slit 92C. With such a configuration, the etching solution can be removed so as to be blown off by the air flow (gas ejected from the slit 92C) before the etching solution reaches the back surface 102 of the workpiece 10.
According to the fourth embodiment as described above, the same effect as that of the first embodiment can be exhibited.

<Fifth Embodiment>
Next, a fifth embodiment of the surface processing apparatus provided with the support device of the present invention will be described.
FIG. 13: is a partial expanded sectional view which shows 5th Embodiment of a surface processing apparatus provided with the support apparatus of this invention.
Hereinafter, the surface processing apparatus according to the fifth embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted.
The surface processing apparatus according to the fifth embodiment of the present invention is the same as the second embodiment described above except that a recovery means for recovering the etching solution blown off by the gas ejected from the ejection holes is provided. . In FIG. 12, the same reference numerals are given to the same configurations as those in the first embodiment and the second embodiment described above.

As shown in FIG. 13, the surface processing apparatus 1 </ b> D of the present embodiment includes a recovery unit 83 that recovers the etching solution blown off by the gas ejected from the ejection holes 9. The recovery means 83 includes a nozzle 831 directed to the edge of the workpiece 10 and a recovery pipe 832 that connects the nozzle 831 and the storage tank 733. Such a recovery means 83 reduces the pressure of the storage tank 733 by the operation of the suction pump 737, so that the etching solution blown off by the gas ejected from the ejection hole 9 together with the gas near the edge of the workpiece 10 from the nozzle 831. Is configured to aspirate. By having such a recovery means 83, it is possible to prevent the etching solution from scattering into the apparatus and to reuse the etching solution.
According to the fifth embodiment as described above, the same effect as that of the first embodiment can be exhibited.

As mentioned above, although the support apparatus and etching method of this invention were demonstrated based on embodiment of illustration, this invention is not limited to these, The structure of each part is the thing of arbitrary structures which have the same function Can be substituted. Moreover, other arbitrary structures and processes may be added. Moreover, you may combine each embodiment mentioned above suitably.
In the above-described embodiment, the surface processing apparatus is described as an apparatus for etching a workpiece by local wet etching. However, the present invention is not limited to this, and the surface processing apparatus may be an apparatus for etching a workpiece by a dipping method.

  1, 1A, 1B, 1C, 1D ... Surface processing device 2 ... Support device 3 ... Chucking plate 31 ... Support surface 4 ... Suction hole 41 ... Groove portion 411 ... Inner periphery 412 ... Outer periphery 42 ... ... Slit 5 ... Suction means 6 ... Fixing means 61 ... Suction hole 62 ... Suction pump 7 ... Etching liquid supply means 71 ... Nozzle 711 ... Outer pipe 712 ... Inner pipe 713 ... Gap 72 ... Control unit 721 ... Nozzle moving device 722 ... Storage unit 723 ... Calculation unit 724 ... Movement control unit 73 ... Etch solution circulating device 731 ... Delivery pipe 732 ... Recovery pipe 733 ... Storage tank 734 ... Sending Liquid pump 735 …… Flow rate control valve 736 …… Flow meter 737 …… Suction pump 738 …… Recovery pipe 74 …… Nozzle assembly 8, 8B …… Blowing means 81 …… Out pump 82 ...... connecting pipe 83 ...... recovery means 831 ...... nozzle 832 ...... recovery pipe 9 ...... ejection hole 91 ...... groove 92,92C ...... slit 10 ...... workpiece 101 ...... objective surface 102 ...... backside

Claims (10)

A support device for supporting the object to be processed when a desired etching process is performed on the object to be processed by supplying an etching solution to the object to be processed,
A support surface for supporting the back side of the surface to be processed of the object to be processed;
A support base having an opening at a position overlapping with at least a part of the edge of the object to be processed in plan view in a state where the object to be processed is supported on the support surface by opening to the support surface; ,
And a suction means for sucking the etching solution from the opening. A support device for supporting the object to be processed when a desired etching process is performed on the object to be processed by supplying an etching solution to the object to be processed,
A support surface for supporting the back side of the surface to be processed of the object to be processed;
In a state where the object to be processed is supported on the support surface by opening to the support surface, a part of the edge of the object to be processed overlaps in plan view, and the other part is separated from the edge of the object to be processed. An opening at a position exposed to the outside, a support base,
And a jetting device for jetting gas from the opening.   The ejection direction of the gas ejected from the opening is inclined toward the outside of the object to be processed in a plan view with respect to the normal direction of the support surface. Support device.   The support device according to claim 1, wherein the opening has a groove shape.   The support device according to claim 4, wherein the opening extends in a direction along an edge of the workpiece in the plan view.   The support device according to claim 4, wherein the opening is formed over the entire circumference of the edge of the workpiece.   The support apparatus according to claim 1, further comprising a fixing unit that fixes the object to be processed to the support surface.   The support device according to claim 7, wherein the fixing unit includes at least one intake hole that opens to the support surface, and a suction pump that decompresses the inside of the intake hole. A supporting step of supporting the back side of the surface to be processed of the processing object on the supporting surface;
An etching step of performing a desired etching process on the object to be processed by supplying an etching solution to the object to be processed,
In the etching step, the etching solution is sucked from an opening formed at a position that opens to the support surface and overlaps at least a part of the edge of the supported object to be processed in plan view. Etching method characterized. A supporting step of supporting the back side of the surface to be processed of the processing object on the supporting surface;
An etching step of performing a desired etching process on the object to be processed by supplying an etching solution to the object to be processed,
In the etching step, the support surface is opened, a part of the edge of the supported workpiece is overlapped, and the other part is formed at a position exposed to the outside from the edge of the workpiece. Etching method characterized by ejecting gas from the opening.

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