JP2010177424A - Surface treatment device and surface treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface treatment device which is capable of locally planarizing a thinned substrate and can be miniaturized and simplified. <P>SOLUTION: The surface treatment device includes a nozzle 3 having a jet outlet 33a for injecting a treatment liquid for etching and an intake 34a for sucking the treatment liquid injected from the jet outlet 33a. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a surface treatment apparatus and a surface treatment method for locally flattening irregularities on a surface of a substrate.

  Conventionally, as a surface treatment method for flattening a quartz substrate (quartz substrate), grinding, polishing (polishing), chemical mechanical polishing (CMP), and the like are known. In addition, a wafer polishing technique using plasma has been established. As such a surface treatment method, a method is disclosed in which a quartz resonator is processed into a convex lens shape that is thinner than a conventional manufacturing limit thickness (see, for example, Patent Document 1).

JP 2001-38607 A

  However, the conventional surface treatment method described above can flatten the substrate by mechanical polishing or CMP within a range where the substrate has a sufficient thickness and mechanical strength, but there is a problem that the thickness that can be processed is limited. is there. Further, since the thinning of the substrate has progressed due to the miniaturization of the quartz element, it is more difficult to flatten the substrate.

  Although it is possible to thin the substrate by using wet etching, uneven etching occurs due to a difference in local etching rate on the processed surface of the substrate, and local unevenness is formed on the substrate. There is a problem. In a thin substrate, it is extremely difficult to locally flatten the unevenness generated by etching by a conventional method.

  In addition, there is a problem that processing of a substrate by plasma etching or ion milling requires a vacuum chamber and gas processing equipment used for processing. This increases the size of the device and increases the cost.

  Accordingly, the present invention provides a surface treatment apparatus and a surface treatment method capable of locally planarizing a substrate that has been thinned so that it is difficult to planarize by a conventional method, and capable of simplifying the size of the apparatus. To do.

  In order to solve the above-described problems, a surface treatment apparatus according to the present invention includes a nozzle that ejects a processing solution for etching and a suction port that sucks the processing solution ejected from the ejection port. It is characterized by having.

With such a configuration, it is possible to flatten the unevenness of the surface of the substrate even if the substrate is thinned so that it is difficult to flatten by the conventional surface treatment method. First, the nozzle is arranged on the substrate so that the ejection port and the suction port are close to the convex portion of the irregularities on the surface of the substrate. Then, the processing liquid is ejected from the ejection port and the processing liquid is sucked from the suction port. Accordingly, the processing liquid can be circulated between the ejection port and the suction port, and the convex portions on the surface of the substrate can be selectively and locally etched by the processing liquid. Therefore, the convex portion can be removed without bringing the nozzle into contact with the substrate, and the thinned substrate can be locally planarized.
Furthermore, etching can be performed in a short time by raising the temperature of the treatment liquid.
Further, a large-scale facility such as a vacuum chamber is not necessary, and the apparatus can be reduced in size and simplified.

  Moreover, the surface treatment apparatus of the present invention is characterized in that the nozzle further includes a gas ejection port that is arranged so as to surround the ejection port and the suction port in a lump so as to eject seal gas.

  With this configuration, the processing liquid can be blocked by the sealing gas, and the processing liquid can be prevented from flowing out of the region to be etched. This makes it possible to further limit the region to be etched on the substrate.

  In the surface treatment apparatus of the present invention, the nozzle further includes a cleaning liquid supply channel that supplies a cleaning liquid for cleaning to the ejection port.

  With this configuration, after the supply of the processing liquid is stopped, the cleaning liquid is ejected from the ejection port, and the surface of the substrate can be cleaned. This can prevent the substrate from being excessively etched by the processing liquid remaining on the surface of the substrate after the supply of the processing liquid is stopped.

  Moreover, the surface treatment apparatus of the present invention is characterized in that the nozzle is disposed at the center of the tip of the nozzle and the suction port is disposed so as to surround the nozzle.

  With this configuration, the processing liquid ejected from the central ejection port flows so as to spread radially along the surface of the substrate and is sucked by the suction port. Therefore, by matching the spout and the apex of the convex portion of the substrate, etching closer to the apex of the convex portion can be advanced than etching of the peripheral portion of the convex portion. Therefore, the convex part of a board | substrate can be planarized efficiently.

  In the surface treatment apparatus of the present invention, the nozzle further includes a gas supply channel that supplies the seal gas to the gas jet port, and the vicinity of the gas jet port of the gas supply channel is located near the nozzle. It is provided with an inclination so as to face the center side.

By comprising in this way, a sealing gas can be sprayed on the center side of a nozzle, and a process liquid can be concentrated on the center side of a nozzle with the pressure of a sealing gas. Thereby, the area | region etched with a process liquid can be limited more.
Further, after the supply of the cleaning liquid is stopped, the treatment surface and the nozzle tip can be dried by continuously spraying the sealing gas. As a result, the substrate can be kept in a dry state, and problems such as the cleaning liquid dripping from the tip of the nozzle onto the substrate and causing stains can be prevented.
Furthermore, the substrate can be dried in a short time by raising the temperature of the sealing gas when the substrate is dried.

  Further, the surface treatment method of the present invention is a surface treatment method for flattening the irregularities of the surface of the substrate, and includes a jet port for ejecting a processing liquid for etching the substrate, and an inlet port for sucking the processing liquid. And a nozzle arrangement step of moving the nozzle on the convex portion of the surface of the substrate, etching the convex portion by ejecting the processing liquid from the jet port, and sucking the processing liquid through the suction port And an etching process.

By processing in this way, it is possible to flatten the unevenness of the surface of the substrate even if the substrate is thinned so that it is difficult to planarize by the conventional surface treatment method. That is, in the nozzle arrangement step, the nozzle is arranged on the substrate so that the ejection port and the suction port are close to the convex portion of the irregularities on the surface of the substrate. Then, in the etching process, the processing liquid is ejected from the ejection port and the processing liquid is sucked from the suction port. Accordingly, the processing liquid can be circulated between the ejection port and the suction port, and the convex portions on the surface of the substrate can be selectively and locally etched by the processing liquid. Therefore, the convex portion can be removed without bringing the nozzle into contact with the substrate, and the thinned substrate can be locally planarized.
Furthermore, etching can be performed in a short time by raising the temperature of the treatment liquid.
Further, a large-scale facility such as a vacuum chamber is not necessary, and the apparatus can be reduced in size and simplified.

  Further, the surface treatment method of the present invention is characterized in that, in the etching step, a seal gas is ejected from a gas ejection port disposed so as to collectively surround the ejection port and the suction port of the nozzle.

  By performing the treatment in this way, the treatment liquid can be blocked by the seal gas, and the treatment liquid can be prevented from flowing out of the region to be etched. This makes it possible to further limit the region to be etched on the substrate.

  In addition, the surface treatment method of the present invention further includes a cleaning step of supplying a cleaning liquid to the jet nozzle through the cleaning liquid supply channel of the nozzle after the etching process is completed.

  By performing the treatment in this manner, it becomes possible to clean the surface of the substrate by ejecting the cleaning liquid from the ejection port after the etching step. This can prevent the substrate from being excessively etched by the processing liquid remaining on the surface of the substrate after the supply of the processing liquid is stopped.

  The surface treatment method of the present invention further includes a drying step of drying the tip of the nozzle and the surface of the substrate with a sealing gas supplied from the gas outlet of the nozzle after the cleaning step. It is characterized by.

By performing the treatment in this manner, the treatment surface and the tip of the nozzle can be dried by spraying the sealing gas after the washing process and after the supply of the washing liquid is stopped. As a result, the substrate can be kept dry, and problems such as the cleaning liquid dripping from the tip of the nozzle onto the substrate can be prevented.
Furthermore, the substrate can be dried in a short time by raising the temperature of the sealing gas when the substrate is dried.

1 is an overall configuration diagram of a surface treatment apparatus in an embodiment of the present invention. (A) is an expanded sectional view of the front-end | tip part of the nozzle of the surface treatment apparatus shown in FIG. 1, (b) is a top view of the front-end | tip part of a nozzle. It is process drawing of the surface treatment method in embodiment of this invention. FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the scale is appropriately changed for each member so that each member has a size that can be recognized on the drawing.
FIG. 1 is a diagram schematically showing the overall configuration of the surface treatment apparatus of the present embodiment. 2A is an enlarged cross-sectional view of the tip of the nozzle of the surface treatment apparatus shown in FIG. 1, and FIG. 2B is a plan view of the tip of the nozzle.

  A surface treatment apparatus 100 shown in FIG. 1 is an apparatus for performing a surface treatment for locally flattening unevenness on the surface of an object such as a substrate W arranged on a mounting table 1. The substrate W on which the surface treatment is performed is, for example, a quartz (quartz) substrate. The surface treatment apparatus 100 mainly includes a mounting table 1, a support frame 2, a nozzle 3, a treatment liquid supply unit 4, a cleaning liquid supply unit 5, a seal gas supply unit 6, and a waste liquid collection unit 7.

  The mounting table 1 positions and holds the substrate W at a predetermined position. The support frame 2 is for supporting the nozzle 3. A flange-like base portion 3b is integrally provided at the base portion of the nozzle 3, and the base portion 3b is fixed to the support frame 2 by a fastening member such as a bolt 8 or the like. Thereby, the nozzle 3 is fixed to the support frame 2. The mounting table 1 and the support frame 2 are provided so as to be relatively movable by a moving mechanism and a control calculation unit (not shown), and three-dimensional alignment between the tip 3a of the nozzle 3 and the substrate W becomes possible. ing.

The nozzle 3 includes a processing liquid supply unit 4, a cleaning liquid supply unit 5, a seal gas supply unit 6 and a waste liquid recovery unit 7, which are a processing liquid supply pipe 4a, a cleaning liquid supply pipe 5a, a seal gas supply pipe 6a, and a waste liquid recovery pipe 7a, respectively. Connected through. Each pipe is provided with control valves 4b to 7b, respectively, which can be controlled to open and close and control the flow rate by a control calculation unit (not shown).
The processing liquid supply unit 4, the cleaning liquid supply unit 5, and the seal gas supply unit 6 are provided with temperature control units (not shown) such as heaters and coolers, respectively, so that liquid temperature control and gas temperature control are possible. .

  The processing liquid supply unit 4 supplies a processing liquid for etching the substrate W, such as a hydrofluoric acid solution, to the nozzle 3. The cleaning liquid supply unit 5 supplies a cleaning liquid for cleaning the substrate W, such as pure water, to the nozzle 3. The seal gas supply unit 6 supplies an inert gas such as air or nitrogen to the nozzle 3 as a seal gas. The waste liquid recovery unit 7 sucks and recovers the processing liquid used for etching, the cleaning liquid used for cleaning, or the seal gas used for drying the substrate W from the nozzle 3, and gas-liquid separation, waste liquid processing, etc. It is configured to process.

As shown in FIG. 2A, a processing liquid supply flow path 31 and a cleaning liquid supply flow path 32 are provided inside the nozzle 3 along the center line CL of the nozzle 3.
The processing liquid supply channel 31 and the cleaning liquid supply channel 32 are respectively connected to the processing liquid supply pipe 4a and the cleaning liquid supply pipe 5a shown in FIG. Further, the treatment liquid supply flow path 31 and the cleaning liquid supply flow path 32 are connected to a common flow path 33 provided on the center line CL of the nozzle 3.

  As shown in FIG. 2 (b), a substantially circular jet outlet 33 a is provided at the center of the tip 3 a of the nozzle 3. The common flow path 33 supplies the processing liquid or the cleaning liquid supplied from the processing liquid supply flow path 31 or the cleaning liquid supply flow path 32 to the ejection port 33a. The ejection port 33 a is configured to eject the processing liquid or the cleaning liquid supplied from the common flow path 33 from the distal end portion 3 a of the nozzle 3.

  As shown in FIG. 2A, a waste liquid recovery flow path 34 is provided around the processing liquid supply flow path 31 and the cleaning liquid supply flow path 32 along these. The waste liquid recovery flow path 34 is provided in a substantially circular cylindrical shape, and is connected to the waste liquid recovery pipe 7a shown in FIG.

  As shown in FIG. 2B, the tip 3a of the nozzle 3 is provided with a suction port 34a for sucking the processing liquid ejected from the ejection port 33a. The suction port 34a is formed in a substantially annular shape around the jet port 33a so as to surround the jet port 33a. The waste liquid recovery channel 34 circulates the processing liquid sucked from the suction port 34a and discharges it to the waste liquid recovery pipe 7a.

  As shown in FIG. 2A, a gas supply channel 35 is provided around the waste liquid recovery channel 34. The gas supply channel 35 is formed in a substantially cylindrical shape on the base portion 3b side shown in FIG. 1 and has a substantially trapezoidal cone shape whose diameter decreases as the distal end portion 3a side approaches the distal end surface 3c. The gas supply passage 35 is connected to the seal gas supply pipe 6a shown in FIG.

As shown in FIG. 2B, a gas outlet 35 a that ejects a seal gas is provided on the tip surface 3 c of the nozzle 3. The gas outlet 35a is formed in a substantially annular shape around the outlet 33a and the suction port 34a so as to collectively surround the outlet 33a and the inlet 34a. As shown in FIG. 2A, in the vicinity of the gas ejection port 35 a, the gas supply channel 35 is provided to be inclined with respect to the center line CL so as to face the center side of the nozzle 3.
Here, as shown in FIG. 2 (a), a recess 3d is formed in the tip surface 3c of the nozzle 3 in which the gas jet 35a is opened, and the jet 33a and the suction port 34a are opened in the bottom 3e of the recess 3d. Has been.

  Next, the operation of the surface treatment apparatus 100 according to the present embodiment will be described while describing a surface treatment method for flattening irregularities on the surface of the substrate W using the surface treatment apparatus 100.

(Nozzle placement process)
In flattening the unevenness on the surface of the substrate W shown in FIG. 1, first, the substrate W is placed on the mounting table 1, and the shape and position of the unevenness on the surface of the substrate W are measured. The unevenness can be measured by an optical method such as scanning the surface of the substrate W with a laser beam.
Next, the measurement result is input to the control arithmetic unit of the surface treatment apparatus 100, and among the unevenness on the surface of the substrate W, the position of each convex part that needs to be flattened, the height from the bottom of the concave part to the top of the convex part Etc. are calculated.

  Then, the control calculation unit calculates an etching time for etching each convex part on the surface of the substrate W, and calculates a route for moving the nozzle 3 from the position of each convex part. Then, the nozzle 3 and the mounting table 1 are relatively moved by the control calculation unit. Then, as shown in FIG. 3A, the nozzle 3 is moved so that the ejection port 33a of the tip surface 3c of the nozzle 3 is positioned on the apex P of the convex portion Wp1 of the substrate W, and the tip surface 3c is convex. Close to the part Wp1. Then, the nozzle 3 is disposed on the convex portion Wp1 on the surface of the substrate W in a state where a predetermined interval is maintained between the tip surface 3c and the substrate W.

(Etching process)
Next, the processing liquid is ejected from the ejection port 33a, and the processing liquid is sucked through the suction port 34a. At the same time, seal gas is ejected from the gas ejection port 35a.
Specifically, the control valve 4b provided in the processing liquid supply pipe 4a shown in FIG. 1 is opened, and the processing liquid is supplied from the processing liquid supply unit 4 to the processing liquid supply flow path 31 of the nozzle through the processing liquid supply pipe 4a. (See FIG. 3A, arrow a1). At this time, the temperature of the processing liquid is raised to an optimum temperature for etching the substrate W by the temperature control unit provided in the processing liquid supply unit 4. Further, the control valve 7b provided in the waste liquid collection pipe 7a shown in FIG. 1 is opened, and the waste liquid collection section 7 makes the inside of the waste liquid collection flow path 34 of the nozzle 3 negative pressure through the waste liquid collection pipe 7a. Further, the control valve 6b provided in the gas supply pipe 6a shown in FIG. 1 is opened, and the seal gas is supplied from the seal gas supply unit 6 to the gas supply flow path 35 of the nozzle 3 through the gas supply pipe 6a (FIG. 3). (See (a), arrow b1).

  At this time, the control valve 5b of the cleaning liquid supply pipe 5a shown in FIG. 1 is in a closed state. Therefore, only the processing liquid is supplied from the processing liquid supply flow path 31 to the common flow path 33 (see FIG. 3A and arrow a2). The processing liquid supplied to the common flow path 33 is ejected from the ejection port 33a provided on the bottom surface 3e of the concave portion 3d of the distal end surface 3c. Further, the seal gas supplied to the gas supply channel 35 is ejected from a gas ejection port 35 a provided on the tip surface 3 c of the nozzle 3.

  The processing liquid ejected from the ejection port 33a flows along the surface of the convex portion Wp1 of the substrate W while spreading radially along the surface of the substrate W in the concave portion 3d of the tip surface 3c, and is sucked by the suction port 34a (see FIG. 3 (a), see arrow a3). The processing liquid sucked from the suction port 34a is discharged through the waste liquid recovery flow path 34 of the nozzle 3 (see FIG. 3 (a), arrow a4), and the waste liquid recovery section via the waste liquid recovery pipe 7a shown in FIG. 7 is collected.

  The seal gas ejected from the gas ejection port 35a is sprayed on the processing liquid flowing from the ejection port 33a toward the suction port 34a. Then, after acting so as to push the processing liquid into the region in the recess 3d of the tip surface 3c, it is discharged to the outside of the nozzle 3 through the gap between the tip surface 3c of the nozzle 3 and the substrate W (FIG. 3A). (See arrow b2).

The convex portion Wp1 on the surface of the substrate W is etched by the processing liquid flowing on the surface of the convex portion Wp1. That is, the processing liquid is circulated between the jet port 33a and the suction port 34a on the surface of the substrate W, and the convex portion Wp1 on the surface of the substrate W is selectively and locally etched by the processing liquid. The control calculation unit continues the etching of the convex portion Wp1 until the etching time calculated in the nozzle arrangement step elapses.
Thereby, as shown in FIG.3 (b), the convex part Wp1 is removed and the surface of the board | substrate W is planarized locally.

(Washing process)
After completion of the etching process, the cleaning liquid is supplied to the ejection port 33a through the cleaning liquid supply channel 32 to clean the surface of the substrate W.
Specifically, the etching process is terminated by closing the control valve 4b shown in FIG. 1 to stop the supply of the processing liquid, and the control valve 5b is opened and the cleaning liquid supply unit 5 starts supplying the cleaning liquid. As a result, the cleaning liquid is supplied to the cleaning liquid supply flow path 32 of the nozzle 3 through the cleaning liquid supply pipe 5a (see FIG. 3C and arrow c1). Here, the control valve 6b shown in FIG. 1 is kept open, and the supply of the seal gas from the seal gas supply unit 6 to the gas supply flow path 35 of the nozzle 3 is continued through the gas supply pipe 6a (FIG. 3 (c). ), See arrow b1).

  At this time, the control valve 4b of the processing liquid supply pipe 4a shown in FIG. 1 is in a closed state. Therefore, only the cleaning liquid is supplied to the common flow path 33 from the cleaning liquid supply flow path 32 (see FIG. 3C and arrow c2). The cleaning liquid supplied to the common flow path 33 is ejected from the ejection port 33a provided on the bottom surface 3e of the concave portion 3d of the distal end surface 3c. Further, the seal gas supplied to the gas supply channel 35 is ejected from a gas ejection port 35 a provided on the tip surface 3 c of the nozzle 3.

  The cleaning liquid ejected from the ejection port 33a flows on the surface of the flattened substrate W while spreading radially along the surface of the substrate W in the recess 3d of the tip surface 3c, and is sucked by the suction port 34a (FIG. 3C). ), See arrow c3). The cleaning liquid sucked from the suction port 34a is discharged through the waste liquid recovery flow path 34 of the nozzle 3 (see FIG. 3 (c), arrow c4), and the waste liquid recovery section 7 via the waste liquid recovery pipe 7a shown in FIG. Is recovered by.

The seal gas ejected from the gas ejection port 35a is blown to the cleaning liquid flowing between the ejection port 33a and the suction port 34a, and acts to push the cleaning liquid into the region in the recess 3d of the tip surface 3c of the nozzle 3. And it discharges | emits to the outer side of the nozzle 3 from the clearance gap between the front end surface 3c of the nozzle 3, and the board | substrate W (refer FIG.3 (c) and arrow b2).
The surface of the flattened substrate W is cleaned with the cleaning liquid, and the processing liquid, reaction product, and the like remaining on the surface are removed. The surface treatment apparatus 100 ends the cleaning process after continuing the cleaning for a predetermined time calculated by the control calculation unit.

(Drying process)
After completion of the cleaning process, a sealing gas is supplied to the gas outlet 35a through the gas supply channel 35 to dry the surface of the substrate W.
Specifically, the cleaning process is terminated by closing the control valve 5b shown in FIG. 1 and stopping the supply of the cleaning liquid. Here, the control valve 6b shown in FIG. 1 is kept open, and the supply of the seal gas from the seal gas supply unit 6 to the gas supply flow path 35 of the nozzle 3 through the gas supply pipe 6a is continued (FIG. 4, arrow). c1).

  At this time, the control valve 4b of the treatment liquid supply pipe 4a and the control valve 5b of the cleaning liquid supply pipe 5a shown in FIG. 1 are closed. For this reason, nothing is supplied to the common flow path 33, and only the seal gas supplied to the gas supply flow path 35 is ejected from the gas ejection port 35a provided on the front end surface 3c of the nozzle 3 (FIG. 4, see arrow c2). Here, the temperature of the seal gas is raised by the temperature control unit provided in the seal gas supply unit 6.

The seal gas ejected from the gas ejection port 35a is blown to the tip end surface 3c of the nozzle 3 and the surface of the substrate W, and is sucked by the suction port 34a (see arrow c3 in FIG. 4). (See arrow c4 in FIG. 4) and at the same time, it is also discharged outside the nozzle 3 through the gap between the tip surface 3c of the nozzle 3 and the substrate W (see arrow c5 in FIG. 4).
The surface of the flattened substrate W and the tip surface 3c of the nozzle 3 are dried by the sealing gas. The surface treatment apparatus 100 ends the drying process after continuing the drying for a predetermined time calculated by the control calculation unit.

  After finishing the drying process, the surface treatment apparatus 100 moves the nozzle 3 onto the next convex portion Wp2 along the route determined in the nozzle arrangement process. At this time, the supply of the sealing gas may be stopped, but it may be kept supplied. When the nozzle 3 is arranged on the next convex portion Wp2, the substrate W is planarized by repeating the etching process to the drying process again.

According to the surface treatment apparatus 100 and the surface treatment method of the present embodiment, the convex portions Wp1, Wp2,..., Wpn of the substrate can be locally removed without bringing the nozzle 3 into contact with the substrate W. Therefore, it is possible to locally planarize the unevenness of the surface of the substrate W even if the substrate W is thinned so that it is difficult to planarize by the conventional method. Further, a large-scale facility such as a vacuum chamber is not necessary, and the apparatus can be reduced in size and simplified.
Further, the etching time of the substrate W can be shortened by increasing the temperature of the processing solution to an optimum temperature for etching the substrate W in the etching step.

Further, seal gas is ejected from a gas ejection port 35a provided so as to surround the ejection port 33a and the suction port 34a in a lump. Accordingly, the processing liquid is blocked by the sealing gas, and the processing liquid can be prevented from flowing out to the outside of the region to be etched, that is, the region outside the convex portions Wp1, Wp2,. Therefore, the region to be etched on the substrate W can be more reliably limited.
In addition, it is possible to prevent the cleaning liquid from flowing out of the front end surface 3 c of the nozzle 3. Therefore, the cleaning liquid can be reliably collected and reused by the suction port 34a.
Further, the sealing gas continues to be ejected as it is after the cleaning step. Thereby, the tip end surface 3c of the nozzle 3 and the wetted region of the substrate W can be reliably dried. Therefore, the substrate W can be kept dry, and it is possible to prevent problems such as the cleaning liquid dripping from the tip of the nozzle 3 onto the surface of the substrate W and causing spots. Moreover, the drying time of the board | substrate W can be shortened by raising the temperature of sealing gas in a drying process.

  Further, at the tip portion 3a of the nozzle 3, a jet port 33a is arranged at the center, and a suction port 34a is arranged so as to surround the jet port 33a. Therefore, the processing liquid ejected from the central ejection port 33a flows so as to spread radially along the surface of the substrate W and is sucked by the suction port 34a. Therefore, by combining the ejection port 33a and the apex P of the convex portion Wp1 of the substrate W, etching closer to the apex P of the convex portion Wp1 can be advanced than etching of the peripheral portion of the convex portion Wp1. Therefore, the convex portion Wp1 can be flattened efficiently.

  Further, a cleaning liquid supply flow path 32 is provided for supplying a cleaning liquid for cleaning to the nozzle 33 a of the nozzle 3. Therefore, after the supply of the processing liquid is stopped, the cleaning liquid is ejected from the ejection port 33a, and the surface of the substrate W can be cleaned. This can prevent the substrate W from being excessively etched by the processing liquid remaining on the surface of the substrate W after the supply of the processing liquid is stopped.

In addition, the gas supply flow path 35 in the vicinity of the gas outlet 35 a of the nozzle 3 is provided in a substantially trapezoidal cone shape, and is inclined with respect to the center line of the nozzle 3 so as to face the center side of the nozzle 3. Yes. For this reason, a seal gas is sprayed on the center side of the nozzle 3 to concentrate the processing liquid on the center side of the nozzle 3 by the pressure of the sealing gas, thereby further limiting the region etched by the processing liquid.
Moreover, the front end surface 3c of the nozzle 3 and the surface of the substrate W can be dried by the sealing gas in the drying process.

  Further, a recess 3d is provided in the tip surface 3c of the nozzle 3, and a jet port 33a and a suction port 34a are opened in the bottom surface 3e of the recess 3d. Therefore, by filling the recess 3d of the nozzle 3 with the processing liquid and putting the convex portion Wp1 of the substrate W inside the concave portion 3d of the nozzle 3, only the convex portion Wp1 of the substrate W can be etched more effectively. Become. Further, it becomes difficult for the processing liquid and the cleaning liquid to flow out of the recess 3d.

  As described above, according to the present embodiment, there are provided the surface treatment apparatus 100 and the surface treatment method that can locally planarize the thinned substrate W and that can reduce the size of the apparatus. be able to.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, regarding the arrangement of the nozzle outlet and the inlet at the tip of the nozzle, the inlet may be arranged at the center and the outlet may be arranged so as to surround the inlet. By arranging in this way, the processing liquid ejected from the jet outlet around the suction port flows into the suction port at the center of the nozzle. Therefore, it becomes difficult for the processing liquid to flow out of the ejection port, and the etching range can be controlled more strictly.

Moreover, you may provide the jet nozzle for ejecting a washing | cleaning liquid separately from the jet nozzle which ejects a process liquid to the front-end | tip part of a nozzle. With this configuration, the substrate can be cleaned immediately after the etching process is completed, and the etching can be prevented from proceeding excessively.
In this case, it is preferable to form the gas jet port so as to collectively surround the jet port for the cleaning liquid, the jet port for the processing liquid, and the suction port. In addition, the positional relationship between the cleaning liquid ejection port and the suction port is preferably the same as the positional relationship between the processing liquid ejection port. As a result, the region etched by the processing liquid can be efficiently cleaned by the cleaning liquid.

  Further, the suction port, the jet port, and the gas jet port may be divided into a plurality of parts instead of the annular shape described in the above embodiment. Further, in the case where the cleaning liquid spout is provided, a suction port may be provided in the center, and the cleaning liquid spout and the processing liquid spout may be alternately provided so as to surround the suction port. In addition, a suction port may be provided in the center, a processing liquid jet port may be provided so as to surround the suction port, and a cleaning liquid jet port may be provided so as to surround the processing liquid jet port. This makes it possible to clean a region wider than the region to be etched with the cleaning liquid.

Moreover, it is preferable that the flow path for supplying the sealing gas, the processing liquid, and the cleaning liquid and the flow path for sucking them have a smooth shape with as few bent portions as possible from the viewpoint of suppressing the flow resistance.
The shape of the nozzle tip is not limited to a circle. For example, it may be a rectangle. Similarly, the shapes of the ejection port, the suction port, and the gas ejection port are not limited to a circle, and may be, for example, a rectangle.
Further, the etching of the convex portion may be performed while measuring the shape of the convex portion by, for example, optical or ultrasonic waves.
Further, the temperature of the cleaning liquid may be raised to a temperature at which the cleaning liquid is not altered or vaporized by a temperature control unit provided in the cleaning liquid supply unit. Thereby, the drying time in a drying process can be shortened.
Further, the material of the nozzle may be any of plastic materials such as fluororesin, metal / ceramic, etc., as long as it is not affected by the components / temperatures of the processing liquid, cleaning liquid, and sealing gas, or a composite material thereof. .

3 nozzle, 3a tip, 32 cleaning liquid supply channel, 33a jet port, 34a suction port, 35 gas supply channel, 35a gas jet port, 100 surface treatment device, W substrate, Wp convex portion

Claims (9)

A spout for ejecting a processing solution for etching;
A suction port for sucking the treatment liquid ejected from the ejection port;
A surface treatment apparatus comprising: a nozzle provided with: 2. The surface treatment apparatus according to claim 1, wherein the nozzle further includes a gas ejection port that is disposed so as to collectively surround the ejection port and the suction port and ejects a seal gas. The surface treatment apparatus according to claim 1, wherein the nozzle further includes a cleaning liquid supply channel that supplies a cleaning liquid for cleaning to the ejection port. 4. The nozzle according to claim 1, wherein the nozzle is disposed in a central portion at a tip of the nozzle, and the suction port is disposed so as to surround the nozzle. 5. The surface treatment apparatus described in 1. The nozzle further includes a gas supply channel for supplying the seal gas to the gas ejection port,
5. The vicinity of the gas ejection port of the gas supply channel is provided so as to be inclined toward the center side of the nozzle. 6. Surface treatment equipment. A surface treatment method for flattening irregularities on the surface of a substrate,
A nozzle arrangement step of moving a nozzle provided with a spout for ejecting a processing liquid for etching the substrate and a suction port for sucking the processing liquid onto a convex portion of the surface of the substrate;
An etching process of jetting the processing liquid from the jetting port to etch the convex portion and sucking the processing liquid through the suction port. The surface treatment method according to claim 6, wherein in the etching step, a seal gas is ejected from a gas ejection port disposed so as to collectively surround the ejection port and the suction port of the nozzle. 8. The surface treatment method according to claim 6, further comprising a cleaning step of supplying a cleaning liquid to the jet nozzle through a cleaning liquid supply channel of the nozzle after the etching process is finished. The method further comprises a drying step of drying the tip of the nozzle and the surface of the substrate with a sealing gas supplied from the gas outlet of the nozzle after completion of the cleaning step. The surface treatment method according to claim 1.

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