JP5689801B2 - 積層装置識別割り当て - Google Patents
積層装置識別割り当て Download PDFInfo
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- JP5689801B2 JP5689801B2 JP2011526973A JP2011526973A JP5689801B2 JP 5689801 B2 JP5689801 B2 JP 5689801B2 JP 2011526973 A JP2011526973 A JP 2011526973A JP 2011526973 A JP2011526973 A JP 2011526973A JP 5689801 B2 JP5689801 B2 JP 5689801B2
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- 230000008859 change Effects 0.000 claims description 8
- 238000012546 transfer Methods 0.000 description 37
- 238000000034 method Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 8
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- 238000004891 communication Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2227—Standby or low power modes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05005—Structure
- H01L2224/05009—Bonding area integrally formed with a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Wire Bonding (AREA)
- Replacement Of Web Rolls (AREA)
Description
Claims (2)
- 第1のダイであって、
第1の値および第2の値のうちの一方を有し得る制御情報を受け取るように構成された第1の入力ノードと、前記第1の値および前記第2の値のうちの一方を有し得る第1のイネーブル情報を受け取るように構成された第2の入力ノードと、前記第2の入力ノードで受け取られた前記第1のイネーブル情報の値が前記第1の値である時に、前記第1の入力ノードで受け取られた前記制御情報を提供する第1の出力ノードと、を有する第1の論理構成要素と、
前記第1のダイへの第1の識別情報の割り当て中に前記第1の入力ノードで受け取られた前記制御情報が前記第1の値を有する時に、前記第1の識別情報を記憶し、かつ、前記第1のイネーブル情報の値を前記第2の値から前記第1の値に変更するように構成された第1の回路と、
を含む第1のダイと、
第2のダイであって、
前記第1の出力ノードに結合され、かつ、前記第1の出力ノードから転送された前記制御情報を受け取るように構成された第3の入力ノードと、前記第1の値および前記第2の値のうちの一方を有し得る第2のイネーブル情報を受け取るように構成された第4の入力ノードと、前記第4の入力ノードで受け取られた前記第2のイネーブル情報の値が前記第1の値である時に、前記第3の入力ノードで受け取られた前記制御情報を提供する第2の出力ノードと、を有する第2の論理構成要素と、
前記第2のダイへの第2の識別情報の割り当て中に前記第3の入力ノードで受け取られた前記制御情報が前記第1の値を有する時に、前記第2の識別情報を記憶し、かつ、前記第2のイネーブル情報の値を前記第2の値から前記第1の値に変更するように構成された第2の回路と、
を含む第2のダイと、
第3のダイであって、
前記第2の出力ノードに結合され、かつ、前記第2の出力ノードから転送された前記制御情報を受け取るように構成された第5の入力ノードと、前記第1の値および前記第2の値のうちの一方を有し得る第3のイネーブル情報を受け取るように構成された第6の入力ノードと、前記第6の入力ノードで受け取られた前記第3のイネーブル情報の値が前記第1の値である時に、前記第5の入力ノードで受け取られた前記制御情報を提供する第3の出力ノードと、を有する第3の論理構成要素と、
前記第3のダイへの第3の識別情報の割り当て中に前記第5の入力ノードで受け取られた前記制御情報が前記第1の値を有する時に、前記第3の識別情報を記憶し、かつ、前記第3のイネーブル情報の値を前記第2の値から前記第1の値に変更するように構成された第3の回路と、
を含む第3のダイと、
を備え、
前記第1のダイ、前記第2のダイ、および前記第3のダイがスタック内に配列され、前記第1のダイの上に前記第2のダイが配置され、かつ、前記第2のダイの上に前記第3のダイが配置されている、装置。 - 前記第1の論理構成要素が、前記第1の入力ノードで受け取られた前記制御情報の値と、前記第2の入力ノードで受け取られた前記第1のイネーブル情報の値との論理ANDに基づいた値を有する情報を前記第1の出力ノードに提供するように構成されており、
前記第2の論理構成要素が、前記第3の入力ノードで受け取られた前記制御情報の値と、前記第4の入力ノードで受け取られた前記第2のイネーブル情報の値との論理ANDに基づいた値を有する情報を前記第2の出力ノードに提供するように構成されており、
前記第3の論理構成要素が、前記第5の入力ノードで受け取られた前記制御情報の値と、前記第6の入力ノードで受け取られた前記第3のイネーブル情報の値との論理ANDに基づいた値を有する情報を前記第3の出力ノードに提供するように構成されている、請求項1に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/209,048 US8130527B2 (en) | 2008-09-11 | 2008-09-11 | Stacked device identification assignment |
US12/209,048 | 2008-09-11 | ||
PCT/US2009/056538 WO2010030799A1 (en) | 2008-09-11 | 2009-09-10 | Stacked device identification assignment |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012502505A JP2012502505A (ja) | 2012-01-26 |
JP5689801B2 true JP5689801B2 (ja) | 2015-03-25 |
Family
ID=41800160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011526973A Active JP5689801B2 (ja) | 2008-09-11 | 2009-09-10 | 積層装置識別割り当て |
Country Status (7)
Country | Link |
---|---|
US (3) | US8130527B2 (ja) |
EP (1) | EP2327093B1 (ja) |
JP (1) | JP5689801B2 (ja) |
KR (1) | KR101528655B1 (ja) |
CN (1) | CN102150257B (ja) |
TW (1) | TWI443793B (ja) |
WO (1) | WO2010030799A1 (ja) |
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2008
- 2008-09-11 US US12/209,048 patent/US8130527B2/en active Active
-
2009
- 2009-09-10 KR KR1020117007751A patent/KR101528655B1/ko active IP Right Grant
- 2009-09-10 JP JP2011526973A patent/JP5689801B2/ja active Active
- 2009-09-10 EP EP09813617.9A patent/EP2327093B1/en active Active
- 2009-09-10 WO PCT/US2009/056538 patent/WO2010030799A1/en active Application Filing
- 2009-09-10 CN CN200980135569.6A patent/CN102150257B/zh active Active
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WO2010030799A1 (en) | 2010-03-18 |
CN102150257A (zh) | 2011-08-10 |
US9196313B2 (en) | 2015-11-24 |
EP2327093A4 (en) | 2013-09-04 |
US20120161814A1 (en) | 2012-06-28 |
KR101528655B1 (ko) | 2015-06-12 |
CN102150257B (zh) | 2015-12-16 |
EP2327093B1 (en) | 2016-07-27 |
US20100064114A1 (en) | 2010-03-11 |
TWI443793B (zh) | 2014-07-01 |
KR20110058869A (ko) | 2011-06-01 |
TW201023327A (en) | 2010-06-16 |
EP2327093A1 (en) | 2011-06-01 |
US8130527B2 (en) | 2012-03-06 |
US8861242B2 (en) | 2014-10-14 |
US20150029774A1 (en) | 2015-01-29 |
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