JP5685621B2 - 音響チップ - Google Patents
音響チップ Download PDFInfo
- Publication number
- JP5685621B2 JP5685621B2 JP2013128388A JP2013128388A JP5685621B2 JP 5685621 B2 JP5685621 B2 JP 5685621B2 JP 2013128388 A JP2013128388 A JP 2013128388A JP 2013128388 A JP2013128388 A JP 2013128388A JP 5685621 B2 JP5685621 B2 JP 5685621B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon nanotube
- substrate
- electrode
- chip
- sound wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 138
- 239000000758 substrate Substances 0.000 claims description 107
- 230000003321 amplification Effects 0.000 claims description 5
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims 1
- 239000002041 carbon nanotube Substances 0.000 description 110
- 229910021393 carbon nanotube Inorganic materials 0.000 description 109
- 239000002238 carbon nanotube film Substances 0.000 description 43
- 239000010410 layer Substances 0.000 description 19
- 239000003960 organic solvent Substances 0.000 description 19
- 230000000694 effects Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 230000017525 heat dissipation Effects 0.000 description 10
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002109 single walled nanotube Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
- H04R23/002—Transducers other than those covered by groups H04R9/00 - H04R21/00 using electrothermic-effect transducer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Carbon And Carbon Compounds (AREA)
Description
図1を参照すると、本実施例の音響チップ10は、基板100と、音波発生器102と、第一電極104と、第二電極106と、集積回路チップ108と、を含む。
図5を参照すると、本発明の実施例2は音響チップ20を提供する。該音響チップ20は、基板100と、音波発生器102と、第一電極104と、第二電極106と、集積回路チップ108と、を含む。
図6を参照すると、本発明の実施例3は音響チップ30を提供する。該音響チップ30は、基板100と、音波発生器102と、第一電極104と、第二電極106と、集積回路チップ108と、を含む。
図7を参照すると、本発明の実施例4は音響チップ40を提供する。該音響チップ40は、基板100と、音波発生器102と、第一電極104と、第二電極106と、集積回路チップ108と、を含む。
図8を参照すると、本発明の実施例5は音響チップ50を提供する。該音響チップ50は、基板100と、音波発生器102と、第一電極104と、第二電極106と、集積回路チップ108と、を含む。
図9及び図10を参照すると、本発明の実施例6は音響チップ60を提供する。該音響チップ60は、基板100と、音波発生器102と、第一電極104と、第二電極106と、集積回路チップ108と、を含む。
100 基板
101 第一表面
102 音波発生器
103 第二表面
104 第一電極
106 第二電極
108 集積回路チップ
110 導線
114 散熱装置
116 絶縁支持体
118 絶縁層
120 導熱ペースト
122 凹突構造体
1220 突起
1222、112 凹部
Claims (3)
- 基板と、音波発生器と、複数の第一電極と、複数の第二電極と、集積回路チップと、を含む音響チップであって、
前記基板が、第一表面を含み、
前記音波発生器が、前記基板の第一表面に設置され、
前記集積回路チップが前記基板に設置され、第一電極及び第二電極と電気的に接続され、
前記集積回路チップには、少なくとも周波数電気信号の電力増幅回路及び直流バイアス回路が集積され、
前記基板の第一表面に複数の突起及び複数の凹部が形成され、前記複数の突起及び前記複数の凹部が交互に設置され、前記凹部の深さが100μm〜200μmであり、
前記複数の第一電極及び前記複数の第二電極は、前記突起に対応する位置に交互にそれぞれ設置されて、前記音波発生器と電気的に接続されることを特徴とする音響チップ。 - 前記音波発生器はカーボンナノチューブ構造体を含むことを特徴とする、請求項1記載の音響チップ。
- 前記基板の第二表面に少なくとも一つの凹部が設置され、前記集積回路チップが前記第二表面の少なくとも一つの凹部に設置され、前記基板によって、音波発生器と集積回路チップとが超小型の一体成型構造に集積されることを特徴とする、請求項1記載の音響チップ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210471194.4A CN103841503B (zh) | 2012-11-20 | 2012-11-20 | 发声芯片 |
CN201210471194.4 | 2012-11-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014103653A JP2014103653A (ja) | 2014-06-05 |
JP5685621B2 true JP5685621B2 (ja) | 2015-03-18 |
Family
ID=50727975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013128388A Active JP5685621B2 (ja) | 2012-11-20 | 2013-06-19 | 音響チップ |
Country Status (4)
Country | Link |
---|---|
US (1) | US9161135B2 (ja) |
JP (1) | JP5685621B2 (ja) |
CN (1) | CN103841503B (ja) |
TW (1) | TWI501656B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2979807A1 (en) | 2015-03-16 | 2016-09-22 | The Regents Of The University Of California | Ultrasonic microphone and ultrasonic acoustic radio |
GB201616512D0 (en) * | 2016-09-29 | 2016-11-16 | University Of Exeter | Heterodyning arrangement |
US10582310B1 (en) | 2017-08-14 | 2020-03-03 | Raytheon Company | Thermoacoustic transducer and methods for resonant generation and amplification of sound emission |
CN109971373B (zh) * | 2017-12-28 | 2021-01-26 | 清华大学 | 一种粘结方法 |
RU2719279C1 (ru) * | 2019-02-26 | 2020-04-17 | Автономная некоммерческая образовательная организация высшего образования «Сколковский институт науки и технологий» (Сколковский институт науки и технологий) | Термоакустический излучатель |
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JP3705926B2 (ja) | 1998-04-23 | 2005-10-12 | 独立行政法人科学技術振興機構 | 圧力波発生装置 |
WO2002063675A1 (fr) | 2001-02-02 | 2002-08-15 | Hitachi, Ltd. | Circuit integre, procede de test et de fabrication d'un circuit integre |
KR100685684B1 (ko) | 2003-02-28 | 2007-02-26 | 노우코우다이 티엘오 가부시키가이샤 | 열 여기음파 발생장치 |
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WO2008076929A1 (en) * | 2006-12-15 | 2008-06-26 | The Regents Of The University Of California | Acoustic substrate |
JP2008167252A (ja) | 2006-12-28 | 2008-07-17 | Victor Co Of Japan Ltd | 熱励起型の音波発生装置 |
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2012
- 2012-11-20 CN CN201210471194.4A patent/CN103841503B/zh active Active
- 2012-11-30 TW TW101144966A patent/TWI501656B/zh active
-
2013
- 2013-06-19 JP JP2013128388A patent/JP5685621B2/ja active Active
- 2013-06-28 US US13/930,510 patent/US9161135B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN103841503B (zh) | 2017-12-01 |
US20140140549A1 (en) | 2014-05-22 |
JP2014103653A (ja) | 2014-06-05 |
US9161135B2 (en) | 2015-10-13 |
CN103841503A (zh) | 2014-06-04 |
TW201422012A (zh) | 2014-06-01 |
TWI501656B (zh) | 2015-09-21 |
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