JP5681354B2 - Ｓｏｉ基板の作製方法 - Google Patents

Ｓｏｉ基板の作製方法 Download PDF

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Publication number
JP5681354B2
JP5681354B2 JP2009229202A JP2009229202A JP5681354B2 JP 5681354 B2 JP5681354 B2 JP 5681354B2 JP 2009229202 A JP2009229202 A JP 2009229202A JP 2009229202 A JP2009229202 A JP 2009229202A JP 5681354 B2 JP5681354 B2 JP 5681354B2
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Japan
Prior art keywords
semiconductor layer
single crystal
insulating film
substrate
layer
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Expired - Fee Related
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JP2009229202A
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English (en)
Japanese (ja)
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JP2010109356A5 (enExample
JP2010109356A (ja
Inventor
下村　明久
明久 下村
古山　将樹
将樹 古山
栄二 比嘉
栄二 比嘉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009229202A priority Critical patent/JP5681354B2/ja
Publication of JP2010109356A publication Critical patent/JP2010109356A/ja
Publication of JP2010109356A5 publication Critical patent/JP2010109356A5/ja
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Publication of JP5681354B2 publication Critical patent/JP5681354B2/ja
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    • H10P90/1916—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H10W10/181—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2009229202A 2008-10-02 2009-10-01 Ｓｏｉ基板の作製方法 Expired - Fee Related JP5681354B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009229202A JP5681354B2 (ja) 2008-10-02 2009-10-01 Ｓｏｉ基板の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008257762 2008-10-02
JP2008257762 2008-10-02
JP2009229202A JP5681354B2 (ja) 2008-10-02 2009-10-01 Ｓｏｉ基板の作製方法

Publications (3)

Publication Number Publication Date
JP2010109356A JP2010109356A (ja) 2010-05-13
JP2010109356A5 JP2010109356A5 (enExample) 2012-11-01
JP5681354B2 true JP5681354B2 (ja) 2015-03-04

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Family Applications (1)

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JP2009229202A Expired - Fee Related JP5681354B2 (ja) 2008-10-02 2009-10-01 Ｓｏｉ基板の作製方法

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US (1) US8871610B2 (enExample)
JP (1) JP5681354B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8357974B2 (en) * 2010-06-30 2013-01-22 Corning Incorporated Semiconductor on glass substrate with stiffening layer and process of making the same
FR2964111B1 (fr) * 2010-08-31 2013-01-25 Commissariat Energie Atomique Procede de collage direct entre deux plaques, comprenant une etape de formation d'une couche de protection temporaire a base d'azote
JP5902917B2 (ja) 2010-11-12 2016-04-13 株式会社半導体エネルギー研究所 半導体基板の作製方法
FR2993095B1 (fr) * 2012-07-03 2014-08-08 Commissariat Energie Atomique Detachement d’une couche autoportee de silicium <100>
JP6061251B2 (ja) * 2013-07-05 2017-01-18 株式会社豊田自動織機 半導体基板の製造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3250673B2 (ja) * 1992-01-31 2002-01-28 キヤノン株式会社 半導体素子基体とその作製方法
JP3352340B2 (ja) * 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
KR100232886B1 (ko) * 1996-11-23 1999-12-01 김영환 Soi 웨이퍼 제조방법
US6287988B1 (en) * 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
SG63832A1 (en) * 1997-03-26 1999-03-30 Canon Kk Substrate and production method thereof
CA2233115C (en) * 1997-03-27 2002-03-12 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
JPH10284431A (ja) * 1997-04-11 1998-10-23 Sharp Corp Ｓｏｉ基板の製造方法
US6251754B1 (en) * 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
US6146979A (en) * 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JPH1197379A (ja) 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
JP3395661B2 (ja) * 1998-07-07 2003-04-14 信越半導体株式会社 Ｓｏｉウエーハの製造方法
JP2000124092A (ja) * 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP3233281B2 (ja) 1999-02-15 2001-11-26 日本電気株式会社 ゲート酸化膜の形成方法
JP2000349266A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法
US6323108B1 (en) * 1999-07-27 2001-11-27 The United States Of America As Represented By The Secretary Of The Navy Fabrication ultra-thin bonded semiconductor layers
JP4450126B2 (ja) 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
FR2894990B1 (fr) * 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
JP4330815B2 (ja) 2001-03-26 2009-09-16 株式会社東芝 半導体装置の製造方法及び製造装置
US6979630B2 (en) * 2002-08-08 2005-12-27 Isonics Corporation Method and apparatus for transferring a thin layer of semiconductor material
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
JP2006120965A (ja) 2004-10-25 2006-05-11 Elpida Memory Inc ゲート酸化膜の形成方法
US7820495B2 (en) * 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007043121A (ja) 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7625783B2 (en) * 2005-11-23 2009-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
EP1835533B1 (en) * 2006-03-14 2020-06-03 Soitec Method for manufacturing compound material wafers and method for recycling a used donor substrate
FR2938120B1 (fr) * 2008-10-31 2011-04-08 Commissariat Energie Atomique Procede de formation d'une couche monocristalline dans le domaine micro-electronique

Also Published As

Publication number Publication date
US8871610B2 (en) 2014-10-28
JP2010109356A (ja) 2010-05-13
US20100087047A1 (en) 2010-04-08

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