JP5669871B2 - リソグラフィ方法および装置 - Google Patents

リソグラフィ方法および装置 Download PDF

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Publication number
JP5669871B2
JP5669871B2 JP2013025770A JP2013025770A JP5669871B2 JP 5669871 B2 JP5669871 B2 JP 5669871B2 JP 2013025770 A JP2013025770 A JP 2013025770A JP 2013025770 A JP2013025770 A JP 2013025770A JP 5669871 B2 JP5669871 B2 JP 5669871B2
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JP
Japan
Prior art keywords
radiation beam
substrate
aberration measurement
lens heating
adjustment
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Active
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JP2013025770A
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English (en)
Japanese (ja)
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JP2013187539A (ja
Inventor
バセルマンズ，ヨハネス，ヤコブス，マシューズ
ヨハネス， クリスティアーン， マリア ヤスペール，
ヨハネス， クリスティアーン， マリア ヤスペール，
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ASML Netherlands BV
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ASML Netherlands BV
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Publication of JP2013187539A publication Critical patent/JP2013187539A/ja
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Publication of JP5669871B2 publication Critical patent/JP5669871B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2013025770A 2012-03-07 2013-02-13 リソグラフィ方法および装置 Active JP5669871B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261607758P 2012-03-07 2012-03-07
US61/607,758 2012-03-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014253969A Division JP6310840B2 (ja) 2012-03-07 2014-12-16 リソグラフィ方法および装置

Publications (2)

Publication Number Publication Date
JP2013187539A JP2013187539A (ja) 2013-09-19
JP5669871B2 true JP5669871B2 (ja) 2015-02-18

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2013025770A Active JP5669871B2 (ja) 2012-03-07 2013-02-13 リソグラフィ方法および装置
JP2014253969A Active JP6310840B2 (ja) 2012-03-07 2014-12-16 リソグラフィ方法および装置
JP2018050649A Active JP6571233B2 (ja) 2012-03-07 2018-03-19 リソグラフィ方法および装置

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JP2014253969A Active JP6310840B2 (ja) 2012-03-07 2014-12-16 リソグラフィ方法および装置
JP2018050649A Active JP6571233B2 (ja) 2012-03-07 2018-03-19 リソグラフィ方法および装置

Country Status (3)

Country Link
US (3) US9304411B2 (enExample)
JP (3) JP5669871B2 (enExample)
NL (1) NL2010262A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015062256A (ja) * 2012-03-07 2015-04-02 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法および装置

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Publication number Priority date Publication date Assignee Title
JP6510675B2 (ja) * 2015-04-20 2019-05-08 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法及び装置
WO2016179542A1 (en) 2015-05-06 2016-11-10 Dolby Laboratories Licensing Corporation Thermal compensation in image projection
US10281825B2 (en) * 2016-05-19 2019-05-07 Asml Netherlands B.V. Method of sequencing lots for a lithographic apparatus
NL2020531A (en) 2017-04-06 2018-10-10 Asml Netherlands Bv Lithographic Method and Apparatus
JP7173730B2 (ja) * 2017-11-24 2022-11-16 キヤノン株式会社 処理装置を管理する管理方法、管理装置、プログラム、および、物品製造方法
WO2019166163A1 (en) 2018-02-27 2019-09-06 Asml Netherlands B.V. Measurement apparatus and method for predicting aberrations in a projection system
JP7297136B1 (ja) * 2022-10-13 2023-06-23 キヤノン株式会社 露光装置、露光装置の制御方法、情報処理装置、情報処理方法、および物品製造方法

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US5424552A (en) * 1991-07-09 1995-06-13 Nikon Corporation Projection exposing apparatus
JP3412981B2 (ja) * 1995-08-29 2003-06-03 キヤノン株式会社 投影露光装置および投影露光方法
JPH10199782A (ja) 1997-01-14 1998-07-31 Canon Inc 投影露光装置
JPH11260712A (ja) * 1998-03-12 1999-09-24 Nikon Corp 露光装置及び方法
JP3264368B2 (ja) 1998-10-16 2002-03-11 日本電気株式会社 縮小投影型露光装置の調整方法
TW500987B (en) * 2000-06-14 2002-09-01 Asm Lithography Bv Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby
KR20040007444A (ko) * 2001-02-06 2004-01-24 가부시키가이샤 니콘 노광장치 및 노광방법, 그리고 디바이스 제조방법
EP1478010A4 (en) * 2002-01-29 2007-12-12 Nikon Corp PICTURE CONTROL STATE SETUP SYSTEM, EXPOSURE METHOD, EXPOSURE DEVICE, PROGRAM AND INFORMATION RECORDING MEDIUM
US7080330B1 (en) * 2003-03-05 2006-07-18 Advanced Micro Devices, Inc. Concurrent measurement of critical dimension and overlay in semiconductor manufacturing
US6934930B2 (en) * 2003-07-08 2005-08-23 Texas Instruments Incorporated Generating an optical model for lens aberrations
US6788383B1 (en) * 2003-07-23 2004-09-07 Asml Netherlands Bvv. Lithographic apparatus, device manufacturing methods, and computer-readable storage medium
US7403264B2 (en) * 2004-07-08 2008-07-22 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus
US7333175B2 (en) * 2004-09-13 2008-02-19 Asml Netherlands, B.V. Method and system for aligning a first and second marker
US7262831B2 (en) * 2004-12-01 2007-08-28 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method using such lithographic projection apparatus
US8045134B2 (en) * 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US7829249B2 (en) * 2007-03-05 2010-11-09 Asml Netherlands B.V. Device manufacturing method, computer program and lithographic apparatus
US20080278698A1 (en) 2007-05-08 2008-11-13 Asml Netherlands B.V. Lithographic apparatus and method
KR20100018547A (ko) * 2007-05-11 2010-02-17 가부시키가이샤 니콘 광학 소자 구동 장치, 경통 및 노광 장치 및 디바이스의 제조 방법
JP2009004711A (ja) * 2007-06-25 2009-01-08 Canon Inc 計測装置、露光装置及びデバイス製造方法
JP5264116B2 (ja) * 2007-07-26 2013-08-14 キヤノン株式会社 結像特性変動予測方法、露光装置、並びにデバイス製造方法
NL1036668A1 (nl) 2008-03-20 2009-09-22 Asml Netherlands Bv Lithographic Apparatus and Device Manufacturing Method.
DE102008042356A1 (de) * 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
NL2003818A (en) * 2008-12-18 2010-06-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5383399B2 (ja) * 2009-09-14 2014-01-08 キヤノン株式会社 管理装置、露光方法及びデバイス製造方法
NL2010262A (en) * 2012-03-07 2013-09-10 Asml Netherlands Bv Lithographic method and apparatus.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015062256A (ja) * 2012-03-07 2015-04-02 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法および装置
JP2018116300A (ja) * 2012-03-07 2018-07-26 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法および装置

Also Published As

Publication number Publication date
US20130235361A1 (en) 2013-09-12
US20150346606A1 (en) 2015-12-03
US20160062243A1 (en) 2016-03-03
US9904180B2 (en) 2018-02-27
JP6310840B2 (ja) 2018-04-11
JP2018116300A (ja) 2018-07-26
NL2010262A (en) 2013-09-10
JP2015062256A (ja) 2015-04-02
JP2013187539A (ja) 2013-09-19
JP6571233B2 (ja) 2019-09-04
US9791787B2 (en) 2017-10-17
US9304411B2 (en) 2016-04-05

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