NL2010262A - Lithographic method and apparatus. - Google Patents
Lithographic method and apparatus. Download PDFInfo
- Publication number
- NL2010262A NL2010262A NL2010262A NL2010262A NL2010262A NL 2010262 A NL2010262 A NL 2010262A NL 2010262 A NL2010262 A NL 2010262A NL 2010262 A NL2010262 A NL 2010262A NL 2010262 A NL2010262 A NL 2010262A
- Authority
- NL
- Netherlands
- Prior art keywords
- radiation beam
- substrates
- lens heating
- substrate
- patterning device
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 58
- 230000005855 radiation Effects 0.000 claims description 169
- 239000000758 substrate Substances 0.000 claims description 147
- 238000000059 patterning Methods 0.000 claims description 76
- 238000001459 lithography Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 description 109
- 230000004075 alteration Effects 0.000 description 93
- 238000010438 heat treatment Methods 0.000 description 89
- 238000005286 illumination Methods 0.000 description 23
- 238000012937 correction Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000010287 polarization Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- PQVHMOLNSYFXIJ-UHFFFAOYSA-N 4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]pyrazole-3-carboxylic acid Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(N1CC2=C(CC1)NN=N2)=O)C(=O)O PQVHMOLNSYFXIJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261607758P | 2012-03-07 | 2012-03-07 | |
| US201261607758 | 2012-03-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2010262A true NL2010262A (en) | 2013-09-10 |
Family
ID=49113860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2010262A NL2010262A (en) | 2012-03-07 | 2013-02-07 | Lithographic method and apparatus. |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US9304411B2 (enExample) |
| JP (3) | JP5669871B2 (enExample) |
| NL (1) | NL2010262A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2010262A (en) * | 2012-03-07 | 2013-09-10 | Asml Netherlands Bv | Lithographic method and apparatus. |
| NL2016625A (en) * | 2015-04-20 | 2016-10-24 | Asml Netherlands Bv | Lithographic Method and Apparatus. |
| EP4050895A1 (en) | 2015-05-06 | 2022-08-31 | Dolby Laboratories Licensing Corp. | Thermal compensation in image projection |
| WO2017198478A1 (en) * | 2016-05-19 | 2017-11-23 | Asml Netherlands B.V. | Method of sequencing lots for a lithographic apparatus |
| JP6854914B2 (ja) * | 2017-04-06 | 2021-04-07 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ方法及び装置 |
| JP7173730B2 (ja) * | 2017-11-24 | 2022-11-16 | キヤノン株式会社 | 処理装置を管理する管理方法、管理装置、プログラム、および、物品製造方法 |
| KR20200108070A (ko) | 2018-02-27 | 2020-09-16 | 에이에스엠엘 네델란즈 비.브이. | 투영 시스템에서의 수차를 예측하기 위한 측정 장치 및 방법 |
| JP7297136B1 (ja) | 2022-10-13 | 2023-06-23 | キヤノン株式会社 | 露光装置、露光装置の制御方法、情報処理装置、情報処理方法、および物品製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5424552A (en) * | 1991-07-09 | 1995-06-13 | Nikon Corporation | Projection exposing apparatus |
| JP3412981B2 (ja) | 1995-08-29 | 2003-06-03 | キヤノン株式会社 | 投影露光装置および投影露光方法 |
| JPH10199782A (ja) | 1997-01-14 | 1998-07-31 | Canon Inc | 投影露光装置 |
| JPH11260712A (ja) * | 1998-03-12 | 1999-09-24 | Nikon Corp | 露光装置及び方法 |
| JP3264368B2 (ja) * | 1998-10-16 | 2002-03-11 | 日本電気株式会社 | 縮小投影型露光装置の調整方法 |
| TW500987B (en) * | 2000-06-14 | 2002-09-01 | Asm Lithography Bv | Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
| CN1491427A (zh) * | 2001-02-06 | 2004-04-21 | ������������ʽ���� | 曝光装置、曝光法和器件制造法 |
| TWI223132B (en) * | 2002-01-29 | 2004-11-01 | Nikon Corp | Image formation state adjustment system, exposing method and exposing device and data recording medium |
| US7080330B1 (en) * | 2003-03-05 | 2006-07-18 | Advanced Micro Devices, Inc. | Concurrent measurement of critical dimension and overlay in semiconductor manufacturing |
| US6934930B2 (en) * | 2003-07-08 | 2005-08-23 | Texas Instruments Incorporated | Generating an optical model for lens aberrations |
| US6788383B1 (en) * | 2003-07-23 | 2004-09-07 | Asml Netherlands Bvv. | Lithographic apparatus, device manufacturing methods, and computer-readable storage medium |
| US7403264B2 (en) * | 2004-07-08 | 2008-07-22 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus |
| US7333175B2 (en) * | 2004-09-13 | 2008-02-19 | Asml Netherlands, B.V. | Method and system for aligning a first and second marker |
| US7262831B2 (en) * | 2004-12-01 | 2007-08-28 | Asml Netherlands B.V. | Lithographic projection apparatus and device manufacturing method using such lithographic projection apparatus |
| US8045134B2 (en) * | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
| US7829249B2 (en) * | 2007-03-05 | 2010-11-09 | Asml Netherlands B.V. | Device manufacturing method, computer program and lithographic apparatus |
| US20080278698A1 (en) | 2007-05-08 | 2008-11-13 | Asml Netherlands B.V. | Lithographic apparatus and method |
| WO2008139964A1 (ja) * | 2007-05-11 | 2008-11-20 | Nikon Corporation | 光学素子駆動装置、鏡筒及び露光装置ならびにデバイスの製造方法 |
| JP2009004711A (ja) * | 2007-06-25 | 2009-01-08 | Canon Inc | 計測装置、露光装置及びデバイス製造方法 |
| JP5264116B2 (ja) * | 2007-07-26 | 2013-08-14 | キヤノン株式会社 | 結像特性変動予測方法、露光装置、並びにデバイス製造方法 |
| NL1036668A1 (nl) | 2008-03-20 | 2009-09-22 | Asml Netherlands Bv | Lithographic Apparatus and Device Manufacturing Method. |
| DE102008042356A1 (de) * | 2008-09-25 | 2010-04-08 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit |
| NL2003818A (en) * | 2008-12-18 | 2010-06-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| JP5383399B2 (ja) * | 2009-09-14 | 2014-01-08 | キヤノン株式会社 | 管理装置、露光方法及びデバイス製造方法 |
| NL2010262A (en) * | 2012-03-07 | 2013-09-10 | Asml Netherlands Bv | Lithographic method and apparatus. |
-
2013
- 2013-02-07 NL NL2010262A patent/NL2010262A/en not_active Application Discontinuation
- 2013-02-13 JP JP2013025770A patent/JP5669871B2/ja active Active
- 2013-02-14 US US13/767,774 patent/US9304411B2/en active Active
-
2014
- 2014-12-16 JP JP2014253969A patent/JP6310840B2/ja active Active
-
2015
- 2015-08-13 US US14/825,771 patent/US9904180B2/en active Active
- 2015-11-06 US US14/934,623 patent/US9791787B2/en active Active
-
2018
- 2018-03-19 JP JP2018050649A patent/JP6571233B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20160062243A1 (en) | 2016-03-03 |
| JP6571233B2 (ja) | 2019-09-04 |
| US9304411B2 (en) | 2016-04-05 |
| US20130235361A1 (en) | 2013-09-12 |
| US9904180B2 (en) | 2018-02-27 |
| JP2018116300A (ja) | 2018-07-26 |
| JP2015062256A (ja) | 2015-04-02 |
| JP2013187539A (ja) | 2013-09-19 |
| JP5669871B2 (ja) | 2015-02-18 |
| US20150346606A1 (en) | 2015-12-03 |
| JP6310840B2 (ja) | 2018-04-11 |
| US9791787B2 (en) | 2017-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20250053702A1 (en) | Process window optimizer | |
| US12067340B2 (en) | Computational wafer inspection | |
| US11379648B2 (en) | Process window identifier | |
| US9791787B2 (en) | Lithographic method and apparatus | |
| US8681309B2 (en) | Lithographic apparatus and device manufacturing method | |
| US20110013163A1 (en) | Device manufacturing method, computer program and lithographic apparatus | |
| US8504333B2 (en) | Method for selecting sample positions on a substrate, method for providing a representation of a model of properties of a substrate, method of providing a representation of the variation of properties of a substrate across the substrate and device manufacturing method | |
| WO2020135997A1 (en) | System and method for inspecting a wafer | |
| CN107810447B (zh) | 用于将标记图案转印到衬底的方法、校准方法以及光刻设备 | |
| NL2003331A (en) | Device manufacturing method, control system, computer program and computer-readable medium. | |
| US7547495B2 (en) | Device manufacturing method and computer program product | |
| US20050195378A1 (en) | Lithographic apparatus, method of substrate identification, device manufacturing method, substrate, and computer program | |
| US20060215141A1 (en) | Lithographic apparatus and method for its use |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WDAP | Patent application withdrawn |
Effective date: 20130912 |