JP5666133B2 - 非接触型処理キット - Google Patents

非接触型処理キット Download PDF

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Publication number
JP5666133B2
JP5666133B2 JP2009543091A JP2009543091A JP5666133B2 JP 5666133 B2 JP5666133 B2 JP 5666133B2 JP 2009543091 A JP2009543091 A JP 2009543091A JP 2009543091 A JP2009543091 A JP 2009543091A JP 5666133 B2 JP5666133 B2 JP 5666133B2
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Japan
Prior art keywords
ring
main body
processing kit
kit according
wall
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Active
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JP2009543091A
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English (en)
Japanese (ja)
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JP2010513722A5 (enExample
JP2010513722A (ja
Inventor
カール ブラウン
カール ブラウン
プニート バジャジ
プニート バジャジ
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2010513722A5 publication Critical patent/JP2010513722A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2009543091A 2006-12-19 2007-12-13 非接触型処理キット Active JP5666133B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US87075206P 2006-12-19 2006-12-19
US60/870,752 2006-12-19
PCT/US2007/087466 WO2008079722A2 (en) 2006-12-19 2007-12-13 Non-contact process kit

Publications (3)

Publication Number Publication Date
JP2010513722A JP2010513722A (ja) 2010-04-30
JP2010513722A5 JP2010513722A5 (enExample) 2010-12-09
JP5666133B2 true JP5666133B2 (ja) 2015-02-12

Family

ID=39563165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009543091A Active JP5666133B2 (ja) 2006-12-19 2007-12-13 非接触型処理キット

Country Status (5)

Country Link
JP (1) JP5666133B2 (enExample)
KR (1) KR101504085B1 (enExample)
CN (1) CN101563560B (enExample)
SG (1) SG177902A1 (enExample)
WO (1) WO2008079722A2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP5194315B2 (ja) * 2008-07-04 2013-05-08 株式会社昭和真空 スパッタリング装置
US8900471B2 (en) 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
WO2011117916A1 (ja) * 2010-03-24 2011-09-29 キヤノンアネルバ株式会社 電子デバイスの製造方法およびスパッタリング方法
SG187625A1 (en) * 2010-08-20 2013-03-28 Applied Materials Inc Extended life deposition ring
CN105177519B (zh) * 2010-10-29 2018-03-27 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
CN102676997A (zh) * 2012-06-11 2012-09-19 上海宏力半导体制造有限公司 一种物理气相沉积设备
GB2522600B (en) * 2013-02-28 2018-07-11 Canon Anelva Corp Sputtering Apparatus
CN104746019B (zh) * 2013-12-26 2018-01-19 北京北方华创微电子装备有限公司 反应腔室及等离子体加工设备
CN105097604B (zh) * 2014-05-05 2018-11-06 北京北方华创微电子装备有限公司 工艺腔室
WO2015188879A1 (en) * 2014-06-13 2015-12-17 Applied Materials, Inc. Flat edge design for better uniformity and increased edge lifetime
US10115573B2 (en) * 2014-10-14 2018-10-30 Applied Materials, Inc. Apparatus for high compressive stress film deposition to improve kit life
US10546733B2 (en) * 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
JP6728196B2 (ja) * 2015-03-20 2020-07-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温ポリマー接合によって金属ベースに接合されたセラミックス静電チャック
CN109321890A (zh) * 2015-07-03 2019-02-12 应用材料公司 具有高沉积环及沉积环夹具的处理配件
TWM534436U (en) * 2015-07-03 2016-12-21 Applied Materials Inc Frame, multi-piece under substrate cover frame and processing chamber
US10103012B2 (en) * 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
JP7225599B2 (ja) * 2018-08-10 2023-02-21 東京エレクトロン株式会社 成膜装置
US11961723B2 (en) * 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
CN110670049A (zh) * 2019-11-19 2020-01-10 武汉新芯集成电路制造有限公司 一种气相沉积方法及装置
TW202129045A (zh) * 2019-12-05 2021-08-01 美商應用材料股份有限公司 多陰極沉積系統與方法
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
CN111471976A (zh) * 2020-05-21 2020-07-31 中国科学院半导体研究所 衬底托
US11492697B2 (en) * 2020-06-22 2022-11-08 Applied Materials, Inc. Apparatus for improved anode-cathode ratio for rf chambers
CN114717514B (zh) * 2021-01-06 2023-12-15 鑫天虹(厦门)科技有限公司 薄膜沉积设备
US20240186176A1 (en) * 2022-12-02 2024-06-06 Onto Innovation Inc. Stage actuator particle shield
CN117305814A (zh) * 2023-09-22 2023-12-29 上海中欣晶圆半导体科技有限公司 一种常压化学气相沉积用治具及其使用方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
JPH11229132A (ja) * 1998-02-19 1999-08-24 Toshiba Corp スパッタ成膜装置およびスパッタ成膜方法
CN1172022C (zh) * 2001-10-11 2004-10-20 矽统科技股份有限公司 沉积过程的工作平台
DE10392235T5 (de) * 2002-02-14 2005-07-07 Trikon Technologies Limited, Newport Vorrichtung zur Plasmabearbeitung
US7670436B2 (en) * 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7579067B2 (en) * 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method

Also Published As

Publication number Publication date
WO2008079722A3 (en) 2009-04-16
CN101563560A (zh) 2009-10-21
SG177902A1 (en) 2012-02-28
CN101563560B (zh) 2012-07-18
WO2008079722A2 (en) 2008-07-03
JP2010513722A (ja) 2010-04-30
KR101504085B1 (ko) 2015-03-19
KR20090094144A (ko) 2009-09-03

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