JP5651511B2 - フォトマスクのパターンの輪郭抽出方法、輪郭抽出装置 - Google Patents

フォトマスクのパターンの輪郭抽出方法、輪郭抽出装置 Download PDF

Info

Publication number
JP5651511B2
JP5651511B2 JP2011063354A JP2011063354A JP5651511B2 JP 5651511 B2 JP5651511 B2 JP 5651511B2 JP 2011063354 A JP2011063354 A JP 2011063354A JP 2011063354 A JP2011063354 A JP 2011063354A JP 5651511 B2 JP5651511 B2 JP 5651511B2
Authority
JP
Japan
Prior art keywords
edge
correction value
value acquisition
edge position
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011063354A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012198436A5 (enExample
JP2012198436A (ja
Inventor
栄二 山中
栄二 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2011063354A priority Critical patent/JP5651511B2/ja
Priority to US13/427,206 priority patent/US8873830B2/en
Publication of JP2012198436A publication Critical patent/JP2012198436A/ja
Publication of JP2012198436A5 publication Critical patent/JP2012198436A5/ja
Application granted granted Critical
Publication of JP5651511B2 publication Critical patent/JP5651511B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/13—Edge detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2011063354A 2011-03-22 2011-03-22 フォトマスクのパターンの輪郭抽出方法、輪郭抽出装置 Expired - Fee Related JP5651511B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011063354A JP5651511B2 (ja) 2011-03-22 2011-03-22 フォトマスクのパターンの輪郭抽出方法、輪郭抽出装置
US13/427,206 US8873830B2 (en) 2011-03-22 2012-03-22 Method for extracting contour of pattern on photo mask, contour extraction apparatus, method for guaranteeing photo mask, and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011063354A JP5651511B2 (ja) 2011-03-22 2011-03-22 フォトマスクのパターンの輪郭抽出方法、輪郭抽出装置

Publications (3)

Publication Number Publication Date
JP2012198436A JP2012198436A (ja) 2012-10-18
JP2012198436A5 JP2012198436A5 (enExample) 2013-06-13
JP5651511B2 true JP5651511B2 (ja) 2015-01-14

Family

ID=46877401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011063354A Expired - Fee Related JP5651511B2 (ja) 2011-03-22 2011-03-22 フォトマスクのパターンの輪郭抽出方法、輪郭抽出装置

Country Status (2)

Country Link
US (1) US8873830B2 (enExample)
JP (1) JP5651511B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102085522B1 (ko) 2013-11-14 2020-03-06 삼성전자 주식회사 패턴의 결함 탐지 방법
DE102013020705B4 (de) * 2013-12-10 2018-01-25 Carl Zeiss Smt Gmbh Verfahren zur Untersuchung einer Maske
CN107533017B (zh) * 2015-03-23 2021-01-08 泰科英赛科技有限公司 与成像装置中失真校正相关的方法、系统和装置
US9928316B2 (en) 2015-03-26 2018-03-27 International Business Machines Corporation Process-metrology reproducibility bands for lithographic photomasks
US10354373B2 (en) 2017-04-26 2019-07-16 Kla-Tencor Corporation System and method for photomask alignment and orientation characterization based on notch detection
KR20230064407A (ko) * 2021-11-03 2023-05-10 삼성전자주식회사 머신 러닝 기반 마스크 레이아웃 보정 방법, 및 그 보정 방법을 포함한 마스크 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3512621B2 (ja) * 1998-02-24 2004-03-31 株式会社東芝 パターン寸法測定方法およびパターン寸法測定処理プログラムを記録した記録媒体
JP2005309140A (ja) 2004-04-22 2005-11-04 Toshiba Corp フォトマスク製造方法、フォトマスク欠陥修正箇所判定方法、及びフォトマスク欠陥修正箇所判定装置
US7313781B2 (en) 2004-05-28 2007-12-25 Kabushiki Kaisha Toshiba Image data correction method, lithography simulation method, image data correction system, program, mask and method of manufacturing a semiconductor device
JP4008934B2 (ja) * 2004-05-28 2007-11-14 株式会社東芝 画像データの補正方法、リソグラフィシミュレーション方法、プログラム及びマスク
JP5069814B2 (ja) * 2004-11-19 2012-11-07 株式会社ホロン 測定値の判定方法
JP4675854B2 (ja) 2006-07-25 2011-04-27 株式会社東芝 パターン評価方法と評価装置及びパターン評価プログラム
JP4856047B2 (ja) * 2007-11-12 2012-01-18 株式会社東芝 マスクパターン寸法検査方法およびマスクパターン寸法検査装置
JP4801697B2 (ja) 2008-06-09 2011-10-26 株式会社日立ハイテクノロジーズ 画像形成方法,画像形成装置、及びコンピュータプログラム
JP5386502B2 (ja) * 2008-11-05 2014-01-15 株式会社日立ハイテクノロジーズ パターン寸法計測方法及びそれを用いた走査電子顕微鏡
DE112008004172T5 (de) * 2008-12-26 2012-03-15 Advantest Corporation Strukturmessgerät und Strukturmessverfahren
JP2011043458A (ja) 2009-08-24 2011-03-03 Hitachi High-Technologies Corp パターン寸法計測方法及びそのシステム
DE112009002638T5 (de) * 2009-10-30 2012-05-16 Advantest Corp. Strukturmessgerät und Strukturmessverfahren

Also Published As

Publication number Publication date
US8873830B2 (en) 2014-10-28
JP2012198436A (ja) 2012-10-18
US20120243772A1 (en) 2012-09-27

Similar Documents

Publication Publication Date Title
JP5559957B2 (ja) パターン測定方法及びパターン測定装置
US8835881B2 (en) Drift correction method and pattern writing data generation method
KR101662306B1 (ko) 패턴의 선폭 측정 방법 및 이를 수행하기 위한 선폭 측정 장치
JP6858732B2 (ja) Opc方法、及びそのopc方法を利用したマスク製造方法
JP2012198436A (ja) フォトマスクのパターンの輪郭抽出方法、輪郭抽出装置、フォトマスクの保証方法及び半導体装置の製造方法
US9665018B2 (en) Measuring apparatus, measuring method, lithography apparatus, and article manufacturing method
US20220342324A1 (en) Processing system, processing method, measurement apparatus, substrate processing apparatus and article manufacturing method
TWI723287B (zh) 帶電粒子束描繪裝置及帶電粒子束描繪方法
KR101204667B1 (ko) 위상반전마스크의 시디 보정방법 및 그 제조방법
US20160172154A1 (en) Charged Particle Beam Device
TW201326739A (zh) 圖案量測裝置及圖案量測方法
US7313781B2 (en) Image data correction method, lithography simulation method, image data correction system, program, mask and method of manufacturing a semiconductor device
US11397380B2 (en) Critical dimension measurement system and method of measuring critical dimensions using same
KR20210033907A (ko) 마크 위치 결정 방법, 리소그래피 방법, 물품제조방법, 프로그램 및 리소그래피 장치
US7644387B2 (en) Semiconductor mask correcting device and semiconductor mask correcting method
CN109698106B (zh) 带电粒子束描绘装置以及带电粒子束描绘方法
US10325755B2 (en) Charged particle beam lithography apparatus and charged particle beam lithography method
US20150144807A1 (en) Drawing data creating method, drawing apparatus, drawing method, and article manufacturing method
JP6513982B2 (ja) 欠陥検査装置並びに欠陥検査装置の管理方法及び管理装置
JP4008934B2 (ja) 画像データの補正方法、リソグラフィシミュレーション方法、プログラム及びマスク
JP5411866B2 (ja) パターン計測装置及びパターン計測方法
US20010015413A1 (en) Electron beam drawing process and electron beam drawing apparatus
CN113325661B (zh) 光罩图形测量方法及其系统
JP4855715B2 (ja) マスク修正方法
JP2001281159A (ja) 検査方法、マスクの製造方法および検査装置、マスク

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130426

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130426

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20131205

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20131212

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20131219

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20131226

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20140109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140421

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141021

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141117

R151 Written notification of patent or utility model registration

Ref document number: 5651511

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees