JP5647757B2 - 半導体装置、発光装置、モジュール、及び電子機器 - Google Patents

半導体装置、発光装置、モジュール、及び電子機器 Download PDF

Info

Publication number
JP5647757B2
JP5647757B2 JP2006179539A JP2006179539A JP5647757B2 JP 5647757 B2 JP5647757 B2 JP 5647757B2 JP 2006179539 A JP2006179539 A JP 2006179539A JP 2006179539 A JP2006179539 A JP 2006179539A JP 5647757 B2 JP5647757 B2 JP 5647757B2
Authority
JP
Japan
Prior art keywords
transistor
wiring
terminal
pixel
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006179539A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007041571A (ja
JP2007041571A5 (fr
Inventor
木村 肇
肇 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006179539A priority Critical patent/JP5647757B2/ja
Publication of JP2007041571A publication Critical patent/JP2007041571A/ja
Publication of JP2007041571A5 publication Critical patent/JP2007041571A5/ja
Application granted granted Critical
Publication of JP5647757B2 publication Critical patent/JP5647757B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
JP2006179539A 2005-06-30 2006-06-29 半導体装置、発光装置、モジュール、及び電子機器 Active JP5647757B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006179539A JP5647757B2 (ja) 2005-06-30 2006-06-29 半導体装置、発光装置、モジュール、及び電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005191145 2005-06-30
JP2005191145 2005-06-30
JP2006179539A JP5647757B2 (ja) 2005-06-30 2006-06-29 半導体装置、発光装置、モジュール、及び電子機器

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012187301A Division JP2013047802A (ja) 2005-06-30 2012-08-28 半導体装置
JP2014166595A Division JP6023762B2 (ja) 2005-06-30 2014-08-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2007041571A JP2007041571A (ja) 2007-02-15
JP2007041571A5 JP2007041571A5 (fr) 2009-08-13
JP5647757B2 true JP5647757B2 (ja) 2015-01-07

Family

ID=37799553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006179539A Active JP5647757B2 (ja) 2005-06-30 2006-06-29 半導体装置、発光装置、モジュール、及び電子機器

Country Status (1)

Country Link
JP (1) JP5647757B2 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424408B (zh) 2005-08-12 2014-01-21 Semiconductor Energy Lab 半導體裝置,和安裝有該半導體裝置的顯示裝置和電子裝置
JP2008257086A (ja) 2007-04-09 2008-10-23 Sony Corp 表示装置、表示装置の製造方法および電子機器
JP5308656B2 (ja) * 2007-12-10 2013-10-09 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 画素回路
KR101681884B1 (ko) * 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
WO2011010545A1 (fr) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Dispositif à semi-conducteurs et son procédé de fabrication
JP5304761B2 (ja) 2010-09-28 2013-10-02 カシオ計算機株式会社 発光装置及び電子機器
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US9385238B2 (en) * 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
JP5832399B2 (ja) * 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
US8637864B2 (en) * 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TWI624936B (zh) * 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
JP6426402B2 (ja) * 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 表示装置
US10008513B2 (en) * 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI665778B (zh) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
JP2014186330A (ja) * 2014-04-25 2014-10-02 Sony Corp 表示装置および電子機器
KR102390487B1 (ko) * 2015-10-20 2022-04-26 삼성디스플레이 주식회사 화소 및 이를 포함하는 유기발광 표시장치
US10403204B2 (en) * 2016-07-12 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and method for driving display device
US10790318B2 (en) 2016-11-22 2020-09-29 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same, and electronic device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002075709A1 (fr) * 2001-03-21 2002-09-26 Canon Kabushiki Kaisha Circuit permettant d'actionner un element electroluminescent a matrice active
JP2003195810A (ja) * 2001-12-28 2003-07-09 Casio Comput Co Ltd 駆動回路、駆動装置及び光学要素の駆動方法

Also Published As

Publication number Publication date
JP2007041571A (ja) 2007-02-15

Similar Documents

Publication Publication Date Title
JP6956283B2 (ja) 表示装置
JP5647757B2 (ja) 半導体装置、発光装置、モジュール、及び電子機器
JP5917649B2 (ja) 半導体装置、表示モジュール、及び電子機器
JP4999351B2 (ja) 半導体装置及び表示装置
JP2006293344A (ja) 半導体装置、表示装置及びその駆動方法並びに電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090626

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090626

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120710

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120828

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130716

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130828

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140819

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20140827

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141110

R150 Certificate of patent or registration of utility model

Ref document number: 5647757

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250