JP5637693B2 - 光電変換装置、及び撮像システム - Google Patents

光電変換装置、及び撮像システム Download PDF

Info

Publication number
JP5637693B2
JP5637693B2 JP2010012582A JP2010012582A JP5637693B2 JP 5637693 B2 JP5637693 B2 JP 5637693B2 JP 2010012582 A JP2010012582 A JP 2010012582A JP 2010012582 A JP2010012582 A JP 2010012582A JP 5637693 B2 JP5637693 B2 JP 5637693B2
Authority
JP
Japan
Prior art keywords
insulating film
photoelectric conversion
plane
light
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010012582A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010226090A (ja
JP2010226090A5 (enExample
Inventor
靖 中田
靖 中田
伊藤　正孝
正孝 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010012582A priority Critical patent/JP5637693B2/ja
Priority to KR1020100014571A priority patent/KR101194653B1/ko
Priority to US12/709,840 priority patent/US8330828B2/en
Publication of JP2010226090A publication Critical patent/JP2010226090A/ja
Publication of JP2010226090A5 publication Critical patent/JP2010226090A5/ja
Application granted granted Critical
Publication of JP5637693B2 publication Critical patent/JP5637693B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010012582A 2009-02-24 2010-01-22 光電変換装置、及び撮像システム Expired - Fee Related JP5637693B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010012582A JP5637693B2 (ja) 2009-02-24 2010-01-22 光電変換装置、及び撮像システム
KR1020100014571A KR101194653B1 (ko) 2009-02-24 2010-02-18 광전변환장치 및 촬상 시스템
US12/709,840 US8330828B2 (en) 2009-02-24 2010-02-22 Device and imaging system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009041298 2009-02-24
JP2009041298 2009-02-24
JP2010012582A JP5637693B2 (ja) 2009-02-24 2010-01-22 光電変換装置、及び撮像システム

Publications (3)

Publication Number Publication Date
JP2010226090A JP2010226090A (ja) 2010-10-07
JP2010226090A5 JP2010226090A5 (enExample) 2013-03-07
JP5637693B2 true JP5637693B2 (ja) 2014-12-10

Family

ID=42630641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010012582A Expired - Fee Related JP5637693B2 (ja) 2009-02-24 2010-01-22 光電変換装置、及び撮像システム

Country Status (3)

Country Link
US (1) US8330828B2 (enExample)
JP (1) JP5637693B2 (enExample)
KR (1) KR101194653B1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5314914B2 (ja) * 2008-04-04 2013-10-16 キヤノン株式会社 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法
JP5663925B2 (ja) * 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2012015424A (ja) * 2010-07-02 2012-01-19 Panasonic Corp 固体撮像装置
JP5950126B2 (ja) * 2011-07-08 2016-07-13 パナソニックＩｐマネジメント株式会社 固体撮像素子および撮像装置
KR20150089650A (ko) * 2014-01-28 2015-08-05 에스케이하이닉스 주식회사 이미지 센서 및 그 제조 방법
TWI667767B (zh) 2014-03-31 2019-08-01 菱生精密工業股份有限公司 Package structure of integrated optical module
KR102159166B1 (ko) 2014-05-09 2020-09-23 삼성전자주식회사 색분리 소자 및 상기 색분리 소자를 포함하는 이미지 센서
FR3044466A1 (fr) * 2015-12-01 2017-06-02 Commissariat Energie Atomique Capteur d'images muni d'un dispositif de tri spectral
CN106842391A (zh) * 2015-12-03 2017-06-13 扬升照明股份有限公司 光学扩散板以及光源模组
US10983318B2 (en) 2018-08-02 2021-04-20 Visera Technologies Company Limited Optical elements
GB2576212B (en) 2018-08-10 2021-12-29 X Fab Semiconductor Foundries Gmbh Improvements in lens layers for semiconductor devices
FR3125920B1 (fr) * 2021-07-27 2023-11-24 St Microelectronics Grenoble 2 Capteur optique

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005210013A (ja) * 2004-01-26 2005-08-04 Dainippon Printing Co Ltd 固体撮像素子
JP2005311015A (ja) 2004-04-21 2005-11-04 Sony Corp 固体撮像素子およびその製造方法
JP4130815B2 (ja) * 2004-07-16 2008-08-06 松下電器産業株式会社 半導体受光素子及びその製造方法
WO2006030944A1 (en) * 2004-09-17 2006-03-23 Matsushita Electric Industrial Co., Ltd. Image input apparatus that resolves color difference
JP4711657B2 (ja) * 2004-09-29 2011-06-29 パナソニック株式会社 固体撮像装置
US7420610B2 (en) * 2004-12-15 2008-09-02 Matsushita Electric Industrial Co., Ltd. Solid-state imaging element, solid-state imaging device, and method for fabricating the same
JP4456040B2 (ja) * 2005-06-17 2010-04-28 パナソニック株式会社 固体撮像素子
WO2008020899A2 (en) * 2006-04-17 2008-02-21 Cdm Optics, Inc. Arrayed imaging systems and associated methods
JP2008010773A (ja) 2006-06-30 2008-01-17 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP5087888B2 (ja) * 2006-08-28 2012-12-05 ソニー株式会社 固体撮像装置及びその製造方法
TW200913238A (en) * 2007-06-04 2009-03-16 Sony Corp Optical member, solid state imaging apparatus, and manufacturing method

Also Published As

Publication number Publication date
KR20100097024A (ko) 2010-09-02
JP2010226090A (ja) 2010-10-07
KR101194653B1 (ko) 2013-01-16
US20100214432A1 (en) 2010-08-26
US8330828B2 (en) 2012-12-11

Similar Documents

Publication Publication Date Title
JP5637693B2 (ja) 光電変換装置、及び撮像システム
US9450011B2 (en) Solid-state image sensor and imaging system
US8003929B2 (en) Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera
JP5595298B2 (ja) 固体撮像装置及び撮像システム
JP6166640B2 (ja) 固体撮像装置、その製造方法及びカメラ
TWI623090B (zh) 背面感光式影像感測器及其形成方法
JP5288823B2 (ja) 光電変換装置、及び光電変換装置の製造方法
CN102637712B (zh) 半导体装置及其制造方法
US9129877B2 (en) Method of manufacturing a semiconductor device including a plurality of photoelectric conversion portions
JP2009252983A (ja) 撮像センサー、及び撮像センサーの製造方法
CN103579273B (zh) 光电转换装置
JP6061544B2 (ja) 撮像装置の製造方法
CN102637705A (zh) 半导体器件制造方法
KR102805244B1 (ko) 이미지 센서 및 이미지 신호 프로세서를 감소시키기 위한 방법
CN117616576A (zh) 光电探测器、光电探测器的制造方法和电子设备
JP2014154834A (ja) 固体撮像素子
US9391227B2 (en) Manufacturing method of semiconductor device
WO2010143347A1 (ja) 固体撮像素子及びその製造方法
JP7457989B2 (ja) 光検出器、固体撮像素子、及び、光検出器の製造方法
CN120642599A (zh) 光电检测器
CN117810235A (zh) 影像传感器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130115

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130115

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140204

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140922

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141021

R151 Written notification of patent or utility model registration

Ref document number: 5637693

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees