JP5627247B2 - マイクロ構造体の製造方法および放射線吸収格子 - Google Patents

マイクロ構造体の製造方法および放射線吸収格子 Download PDF

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Publication number
JP5627247B2
JP5627247B2 JP2010028177A JP2010028177A JP5627247B2 JP 5627247 B2 JP5627247 B2 JP 5627247B2 JP 2010028177 A JP2010028177 A JP 2010028177A JP 2010028177 A JP2010028177 A JP 2010028177A JP 5627247 B2 JP5627247 B2 JP 5627247B2
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plating layer
microstructure
mold
plating
manufacturing
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Expired - Fee Related
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JP2010028177A
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Japanese (ja)
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JP2011162854A (ja
JP2011162854A5 (enExample
Inventor
手島　隆行
隆行 手島
詩男 王
詩男 王
豊 ▲瀬▼戸本
豊 ▲瀬▼戸本
中村　高士
高士 中村
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Canon Inc
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Canon Inc
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Priority to JP2010028177A priority Critical patent/JP5627247B2/ja
Priority to US13/023,454 priority patent/US8908274B2/en
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Publication of JP2011162854A5 publication Critical patent/JP2011162854A5/ja
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C23C18/1692—Heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
    • C23C18/1868—Radiation, e.g. UV, laser
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2207/00—Particular details of imaging devices or methods using ionizing electromagnetic radiation such as X-rays or gamma rays
    • G21K2207/005—Methods and devices obtaining contrast from non-absorbing interaction of the radiation with matter, e.g. phase contrast
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Electroplating Methods And Accessories (AREA)
JP2010028177A 2010-02-10 2010-02-10 マイクロ構造体の製造方法および放射線吸収格子 Expired - Fee Related JP5627247B2 (ja)

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Application Number Priority Date Filing Date Title
JP2010028177A JP5627247B2 (ja) 2010-02-10 2010-02-10 マイクロ構造体の製造方法および放射線吸収格子
US13/023,454 US8908274B2 (en) 2010-02-10 2011-02-08 Microstructure manufacturing method and microstructure

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JP2010028177A JP5627247B2 (ja) 2010-02-10 2010-02-10 マイクロ構造体の製造方法および放射線吸収格子

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JP2011162854A JP2011162854A (ja) 2011-08-25
JP2011162854A5 JP2011162854A5 (enExample) 2013-03-28
JP5627247B2 true JP5627247B2 (ja) 2014-11-19

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11101051B2 (en) 2017-04-05 2021-08-24 Hamamatsu Photonics K.K. Metal X-ray grid, X-ray imaging device, and production method for metal X-ray grid
US11109828B2 (en) 2017-04-05 2021-09-07 Hamamatsu Photonics K.K. Metal X-ray grid, X-ray imaging device, and production method for metal X-ray grid

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DE102009019595B4 (de) * 2009-04-30 2013-02-28 Forschungszentrum Karlsruhe Gmbh Gitter mit großem Aspektverhältnis, insbesondere zur Verwendung als röntgenoptisches Gitter in einem CT-System, hergestellt durch ein Lithographieverfahren
JP5773624B2 (ja) * 2010-01-08 2015-09-02 キヤノン株式会社 微細構造体の製造方法
EP2630476B1 (en) * 2010-10-19 2017-12-13 Koninklijke Philips N.V. Differential phase-contrast imaging
JP6228457B2 (ja) * 2010-10-19 2017-11-08 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 微分位相コントラスト画像形成
JP5804726B2 (ja) * 2011-02-24 2015-11-04 キヤノン株式会社 微細構造体の製造方法
JP2013120126A (ja) * 2011-12-07 2013-06-17 Canon Inc 微細構造体、およびその微細構造体を備えた撮像装置
JP2013122487A (ja) * 2011-12-09 2013-06-20 Konica Minolta Medical & Graphic Inc 金属格子の製造方法、金属格子およびｘ線撮像装置
TWI472813B (zh) * 2012-02-17 2015-02-11 Nat Univ Tsing Hua 反射式偏光片
JP6172433B2 (ja) * 2013-01-29 2017-08-02 国立研究開発法人産業技術総合研究所 Ｘ線反射装置及びその製造方法
JP6436089B2 (ja) * 2013-10-25 2018-12-12 コニカミノルタ株式会社 湾曲型格子の製造方法
JP6217381B2 (ja) * 2013-12-24 2017-10-25 コニカミノルタ株式会社 格子湾曲方法
JP6667215B2 (ja) * 2014-07-24 2020-03-18 キヤノン株式会社 Ｘ線遮蔽格子、構造体、トールボット干渉計、ｘ線遮蔽格子の製造方法
US9618664B2 (en) * 2015-04-15 2017-04-11 Finisar Corporation Partially etched phase-transforming optical element
EP3454051A1 (en) 2017-09-06 2019-03-13 Koninklijke Philips N.V. Diffraction grating for x-ray phase contrast and/or dark-field imaging
EP3498889A1 (en) * 2017-12-12 2019-06-19 Koninklijke Philips N.V. Device and method for anodic oxidation of an anode element for a curved x-ray grating, system for producing a curved x-ray grating and curved x-ray grating
EP3745420A1 (en) * 2019-05-27 2020-12-02 Koninklijke Philips N.V. Stabilized grating structures
EP3786981A1 (en) * 2019-08-30 2021-03-03 Koninklijke Philips N.V. Stable top-bridge manufacturing for dax gratings

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US5866281A (en) * 1996-11-27 1999-02-02 Wisconsin Alumni Research Foundation Alignment method for multi-level deep x-ray lithography utilizing alignment holes and posts
DE102006037281A1 (de) * 2006-02-01 2007-08-09 Siemens Ag Röntgenoptisches Durchstrahlungsgitter einer Fokus-Detektor-Anordnung einer Röntgenapparatur zur Erzeugung projektiver oder tomographischer Phasenkontrastaufnahmen von einem Untersuchungsobjekt
DE102006037256B4 (de) * 2006-02-01 2017-03-30 Paul Scherer Institut Fokus-Detektor-Anordnung einer Röntgenapparatur zur Erzeugung projektiver oder tomographischer Phasenkontrastaufnahmen sowie Röntgensystem, Röntgen-C-Bogen-System und Röntgen-CT-System
DE102006037282B4 (de) * 2006-02-01 2017-08-17 Siemens Healthcare Gmbh Fokus-Detektor-Anordnung mit röntgenoptischem Gitter zur Phasenkontrastmessung
DE102008049200B4 (de) * 2008-09-26 2010-11-11 Paul Scherrer Institut Verfahren zur Herstellung von röntgenoptischen Gittern, röntgenoptisches Gitter und Röntgen-System
JP5773624B2 (ja) * 2010-01-08 2015-09-02 キヤノン株式会社 微細構造体の製造方法
JP5744407B2 (ja) * 2010-02-23 2015-07-08 キヤノン株式会社 マイクロ構造体の製造方法
JP5435484B2 (ja) * 2010-03-24 2014-03-05 富士フイルム株式会社 金属充填微細構造体の製造方法
JP2013120126A (ja) * 2011-12-07 2013-06-17 Canon Inc 微細構造体、およびその微細構造体を備えた撮像装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11101051B2 (en) 2017-04-05 2021-08-24 Hamamatsu Photonics K.K. Metal X-ray grid, X-ray imaging device, and production method for metal X-ray grid
US11109828B2 (en) 2017-04-05 2021-09-07 Hamamatsu Photonics K.K. Metal X-ray grid, X-ray imaging device, and production method for metal X-ray grid

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US8908274B2 (en) 2014-12-09
US20110194673A1 (en) 2011-08-11
JP2011162854A (ja) 2011-08-25

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