JP5623184B2 - Wiring board and imaging device - Google Patents

Wiring board and imaging device Download PDF

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JP5623184B2
JP5623184B2 JP2010189603A JP2010189603A JP5623184B2 JP 5623184 B2 JP5623184 B2 JP 5623184B2 JP 2010189603 A JP2010189603 A JP 2010189603A JP 2010189603 A JP2010189603 A JP 2010189603A JP 5623184 B2 JP5623184 B2 JP 5623184B2
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insulating substrate
wiring board
mounting region
low thermal
resin
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JP2012049308A (en
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健一 小濱
健一 小濱
宏幸 瀬川
宏幸 瀬川
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15182Fan-in arrangement of the internal vias
    • H01L2924/15184Fan-in arrangement of the internal vias in different layers of the multilayer substrate

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

本発明は、半導体素子等の電子部品を収容して搭載するための配線基板に関するものである。   The present invention relates to a wiring board for accommodating and mounting an electronic component such as a semiconductor element.

従来から、電子部品を搭載し、電子機器に組み込まれる配線基板としてセラミック製のものが用いられている。搭載される電子部品には、温度によって電気伝導性などの物理的性質が変化するものがある。例えば、半導体素子は、この性質が特に顕著であり、例えば半導体を用いたCMOS型またはCCD型のイメージセンサ等の撮像素子においては、素子の温度の変化は受光感度に影響を与え、素子の温度ムラに応じた感度ムラが生じて画像にムラが生じる。また、搭載される電子部品としては、物理的性質が温度によって変化する性質を利用して、赤外線で素子が加熱されることによって物体の温度を非接触で測定する赤外線センサ素子や、暗視カメラ等に用いられる赤外線撮像素子が知られている。このような電子部品を搭載する配線基板においては、電子部品の温度が不均一になることを抑制するために、配線基板にヒートシンクを取り付けることで外部に熱を放出する技術が知られている(例えば、特許文献1を参照。)。また、冷却水やペルティエ素子を用いて電子部品を冷却する技術や、ヒーターを用いて素子の低温部分を加熱することで素子の搭載面の温度を均一にすることで、素子全体の温度を均一にする技術等も知られている。   Conventionally, a ceramic substrate is used as a wiring board on which electronic components are mounted and incorporated in an electronic device. Some electronic components mounted have physical properties such as electrical conductivity that change depending on temperature. For example, this characteristic is particularly remarkable in a semiconductor element. For example, in an imaging element such as a CMOS type or CCD type image sensor using a semiconductor, a change in element temperature affects light receiving sensitivity, and the temperature of the element. Sensitivity unevenness corresponding to the unevenness occurs, resulting in unevenness in the image. In addition, as an electronic component to be mounted, an infrared sensor element that measures the temperature of an object in a non-contact manner by heating the element with infrared rays using a property that physical properties change with temperature, or a night vision camera Infrared imaging devices used for the above are known. In a wiring board on which such an electronic component is mounted, a technique for releasing heat to the outside by attaching a heat sink to the wiring board is known in order to prevent the temperature of the electronic component from becoming non-uniform ( For example, see Patent Document 1.) In addition, the temperature of the element mounting surface is made uniform by technology that cools electronic components using cooling water and Peltier elements, and by heating the low-temperature part of the element using a heater. The technology to make is also known.

特開2005−101484号公報JP-A-2005-101484

しかしながら、近年は、電子装置の小型化,薄型化および高精度化に伴い、配線基板にヒートシンクや冷却水の流路やペルティエ素子を設ける部分を確保することが困難になっている。また、ヒーターで電子部品の低温部分を加熱する場合には、電子部品の搭載部の温度を均一にするために搭載部の全面をヒーターで加熱しており、電力消費量が多いという問題があった。   However, in recent years, it has become difficult to secure a portion where a heat sink, a flow path of cooling water, and a Peltier element are provided on the wiring board as the electronic device is reduced in size, thickness, and accuracy. In addition, when heating a low temperature part of an electronic component with a heater, the entire surface of the mounting part is heated with a heater in order to make the temperature of the mounting part of the electronic component uniform. It was.

本発明は、上記従来技術の問題点に鑑みて案出されたものであり、その目的は、搭載される電子部品の温度を低消費電力で均一にできる電子部品搭載用基板を提供することにある。   The present invention has been devised in view of the above problems of the prior art, and an object of the present invention is to provide an electronic component mounting board capable of uniformly setting the temperature of the mounted electronic component with low power consumption. is there.

本発明の配線基板は、上面に実装領域を有する絶縁基板と、絶縁基板の上面に配置された複数の接続電極と、一端が接続電極に接続されているとともに他端が絶縁基板の外表面に引き出されている配線導体とを備えた配線基板において、実装領域の周囲に、実装領域を囲むように、絶縁基板よりも熱伝導率の小さい低熱伝導部が複数形成されており、前記実装領域の下の前記絶縁基板内に、低熱伝導部がさらに形成されており、前記実装領域の下の前記絶縁基板内に形成された前記低熱伝導部は、前記絶縁基板の下面にのみ開口していることを特徴とするものである。
The wiring board of the present invention includes an insulating substrate having a mounting region on the upper surface, a plurality of connection electrodes disposed on the upper surface of the insulating substrate, one end connected to the connection electrode and the other end on the outer surface of the insulating substrate. In a wiring board provided with a drawn wiring conductor, a plurality of low thermal conductivity parts having a lower thermal conductivity than the insulating substrate are formed around the mounting area so as to surround the mounting area. A low thermal conductive portion is further formed in the lower insulating substrate, and the low thermal conductive portion formed in the insulating substrate under the mounting region is opened only on the lower surface of the insulating substrate . It is characterized by.

また、本発明の配線基板は、上記構成において、絶縁基板の低熱伝導部同士の間にヒーターが配置されていることを特徴とするものである。   Moreover, the wiring board of the present invention is characterized in that, in the above configuration, a heater is disposed between the low thermal conductive portions of the insulating substrate.

また、本発明の配線基板は、上記構成において、接続電極は、上面の低熱伝導部の外側に配置されていることを特徴とするものである。   The wiring board according to the present invention is characterized in that, in the above configuration, the connection electrode is disposed outside the low heat conduction portion on the upper surface.

また、本発明の撮像装置は、上記本発明の配線基板の実装領域に撮像素子が実装されたことを特徴とするものである。   The image pickup apparatus of the present invention is characterized in that an image pickup element is mounted in the mounting region of the wiring board of the present invention.

本発明の配線基板によれば、上面に実装領域を有する絶縁基板と、絶縁基板の上面に配置された複数の接続電極と、一端が接続電極に接続されているとともに他端が絶縁基板の外表面に引き出されている配線導体とを備えた配線基板において、実装領域の周囲に、実装領域を囲むように、絶縁基板よりも熱伝導率の小さい低熱伝導部が複数形成されていることから、電子部品で発熱した熱が実装領域の周囲の領域に伝わりにくくなる。また、実装領域の周囲の領域や配線基板の外部からの熱は、実装領域に伝わりにくくなる。従って、熱は実装領域内に拡散して実装領域の温度が均一な配線基板となる。   According to the wiring board of the present invention, the insulating substrate having the mounting region on the upper surface, the plurality of connection electrodes arranged on the upper surface of the insulating substrate, one end connected to the connection electrode and the other end outside the insulating substrate. In a wiring board provided with wiring conductors drawn to the surface, a plurality of low thermal conductivity parts having a lower thermal conductivity than the insulating substrate are formed around the mounting area so as to surround the mounting area. Heat generated by the electronic component is not easily transmitted to the area around the mounting area. In addition, heat from the area around the mounting area and from the outside of the wiring board is less likely to be transmitted to the mounting area. Accordingly, the heat is diffused into the mounting region, and the wiring substrate has a uniform temperature in the mounting region.

本発明の配線基板によれば、低熱伝導部が、実装領域の下の絶縁基板内に形成されている場合には、実装領域の下面からの熱の出入が抑制され、実装領域の上面の温度をより均一にできる。   According to the wiring board of the present invention, when the low thermal conductive portion is formed in the insulating substrate below the mounting region, heat input / output from the lower surface of the mounting region is suppressed, and the temperature of the upper surface of the mounting region is reduced. Can be made more uniform.

本発明の配線基板によれば、絶縁基板の低熱伝導部同士の間にヒーターが配置されている場合には、ヒーターによって絶縁基板の低熱伝導部同士の間を加熱して、実装される電子部品の温度以上とすることができる。電子部品の温度はヒーターの温度以下なので、電子部品の熱は絶縁基板の低熱伝導部同士の間を介して外部に伝わることがない。従って、実装領域の温度をより均一にできる。   According to the wiring board of the present invention, when the heater is disposed between the low thermal conductive portions of the insulating substrate, the electronic component is mounted by heating the low thermal conductive portions of the insulating substrate with the heater. Or higher. Since the temperature of the electronic component is equal to or lower than the temperature of the heater, the heat of the electronic component is not transmitted to the outside through the space between the low thermal conductive portions of the insulating substrate. Therefore, the temperature of the mounting area can be made more uniform.

本発明の配線基板によれば、接続電極が上面の低熱伝導部の外側に配置されている場合には、絶縁基板内に、実装領域と低熱伝導部の外側の領域とにまたがって配線導体が配置されていないので、実装領域と低熱伝導部との間で、配線導体を介して熱が伝わることが無い。従って、実装領域の温度をより均一にできる。   According to the wiring board of the present invention, when the connection electrode is disposed outside the low heat conduction portion on the upper surface, the wiring conductor extends across the mounting region and the region outside the low heat conduction portion in the insulating substrate. Since it is not disposed, heat is not transmitted between the mounting region and the low thermal conduction portion via the wiring conductor. Therefore, the temperature of the mounting area can be made more uniform.

また、本発明の撮像装置は、上記構成の配線基板の実装領域に撮像素子が実装されていることから、小型でムラのない画像信号を出力することが可能な撮像装置となる。   In addition, since the imaging device of the present invention is mounted in the mounting area of the wiring board having the above-described configuration, the imaging device is small and can output a uniform image signal.

(a)は本発明の配線基板の実施の形態の一例を示す平面図であり、(b)は(a)のA−A線における断面図である。(A) is a top view which shows an example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a). 本発明の配線基板の実施の形態の他の例を示す平面図である。It is a top view which shows the other example of embodiment of the wiring board of this invention. (a)は本発明の配線基板の実施の形態の他の例を示す平面図であり、(b)は(a)のA−A線における断面図である。(A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a). (a)は本発明の配線基板の実施の形態の他の例を示す平面図であり、(b)は(a)のA−A線における断面図である。(A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a). (a)は本発明の配線基板の実施の形態の他の例を示す平面図であり、(b)は(a)のA−A線における断面図であり、(c)は(a)のB−B線における断面図である。(A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a), (c) is (a). It is sectional drawing in the BB line. (a)は本発明の配線基板の実施の形態の他の例を示す平面図であり、(b)は(a)のA−A線における断面図である。(A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a). (a)は本発明の配線基板の実施の形態の他の例を示す平面図であり、(b)は(a)のA−A線における断面図である。(A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a). (a)は本発明の撮像装置の実施の形態の一例を示す断面図であり、(b)は本発明の撮像装置の実施の形態の他の例を示す断面図である。(A) is sectional drawing which shows an example of embodiment of the imaging device of this invention, (b) is sectional drawing which shows the other example of embodiment of imaging device of this invention.

本発明の撮像装置および撮像装置モジュールについて、添付の図面を参照しつつ説明する。図1〜図8において、1は絶縁基板、2は実装領域、3は接続電極、4は配線導体、5は低熱伝導部、5aは貫通孔、6はヒーター、7は撮像素子、7aは受光部、8は接続部材、9は蓋体、10は透光性部材、11は接合材、Xは橋部である。なお、図1(a)および図2は平面図であるが、橋部Xには、認識しやすいようにハッチングを設けている。   The imaging device and imaging device module of the present invention will be described with reference to the accompanying drawings. 1 to 8, 1 is an insulating substrate, 2 is a mounting region, 3 is a connection electrode, 4 is a wiring conductor, 5 is a low heat conduction part, 5a is a through hole, 6 is a heater, 7 is an image sensor, and 7a is a light receiving device. , 8 is a connection member, 9 is a lid, 10 is a translucent member, 11 is a bonding material, and X is a bridge. In addition, although Fig.1 (a) and FIG. 2 are top views, the bridge part X is provided with hatching so that it may be recognized easily.

本発明の配線基板は、図1〜図8にそれぞれ示す例のように、上面に実装領域2を有する絶縁基板1と、絶縁基板1の上面に配置された複数の接続電極3と、一端が接続電極3に接続されているとともに他端が実装領域2の周囲の絶縁基板1の外表面に引き出されている配線導体4とを備えた配線基板において、実装領域2の周囲に、実装領域2を囲むように、絶縁基板1よりも熱伝導率の小さい低熱伝導部5が複数形成されていることから、実装領域2と実装領域2の周囲の領域とは、低熱伝導部5同士の間の幅の小さい領域Xで接続されている。よって、実装された電子部品の一部が発熱したとしても熱がこの幅の小さい領域Xを通って実装領域2の周囲の領域に伝わりにくく、実装領域2へと拡散しやすくなる。また、配線基板の外部から実装領域2に伝わる熱は、配線基板に電子部品を実装した電子装置を外部回路基板に実装した際に、電子装置の周囲に実装された電子部品から発生された熱である。このような熱は、外部回路基板,外部回路基板の配線導体4または、配線基板の周囲の気体を介して配線基板に伝わるので、平面視で配線基板の外周側から実装領域2に伝わる熱量が多い。従って、上記構成とすると、実装領域2の周囲の領域や配線基板の外部からの熱は、幅の小さい領域Xを通って実装領域2の周囲から実装領域2に伝わりにくくなり、実装領域2の温度を均一にできる配線基板となる。   1 to 8, the wiring board of the present invention includes an insulating substrate 1 having a mounting region 2 on the upper surface, a plurality of connection electrodes 3 disposed on the upper surface of the insulating substrate 1, and one end thereof. In a wiring board provided with a wiring conductor 4 connected to the connection electrode 3 and having the other end drawn to the outer surface of the insulating substrate 1 around the mounting area 2, the mounting area 2 is provided around the mounting area 2. Since a plurality of low thermal conductive parts 5 having a lower thermal conductivity than the insulating substrate 1 are formed so as to surround the mounting substrate 2, the mounting region 2 and the region around the mounting region 2 are between the low thermal conductive units 5. They are connected in a region X having a small width. Therefore, even if a part of the mounted electronic component generates heat, the heat is not easily transmitted to the area around the mounting area 2 through the small area X, and is easily diffused to the mounting area 2. Further, the heat transmitted from the outside of the wiring board to the mounting area 2 is generated by the electronic components mounted around the electronic device when the electronic device having the electronic components mounted on the wiring board is mounted on the external circuit board. It is. Since such heat is transmitted to the wiring board via the external circuit board, the wiring conductor 4 of the external circuit board, or the gas around the wiring board, the amount of heat transferred from the outer peripheral side of the wiring board to the mounting region 2 in a plan view. Many. Therefore, with the above configuration, heat from the area around the mounting area 2 and the outside of the wiring board is less likely to be transmitted from the periphery of the mounting area 2 to the mounting area 2 through the area X having a small width. The wiring board can be made uniform in temperature.

また、図1および図2にそれぞれ示す例では、絶縁基板1の中央に実装領域2が配置されており、外部端子となる配線導体4および接続電極3が上面の低熱伝導部5の外側に配置されている。このような場合には、絶縁基板1内に、実装領域2と低熱伝導部5の外側の領域とにまたがって配線導体4が配置されていない。よって、実装領域2と低熱伝導部5の外側の領域との間で、配線導体4を介して熱が伝わることが無く、絶縁基板1の低熱伝導部5同士の間の領域X(以下「橋部X」と呼称する)のみを介して熱が伝わる。従って、実装領域2の温度をより均一にする上で有効である。   Further, in each of the examples shown in FIGS. 1 and 2, the mounting region 2 is disposed in the center of the insulating substrate 1, and the wiring conductor 4 and the connection electrode 3 serving as external terminals are disposed outside the low heat conducting portion 5 on the upper surface. Has been. In such a case, the wiring conductor 4 is not disposed in the insulating substrate 1 across the mounting region 2 and the region outside the low heat conducting portion 5. Therefore, heat is not transmitted between the mounting region 2 and the region outside the low thermal conductive portion 5 via the wiring conductor 4, and the region X (hereinafter “bridge”) between the low thermal conductive portions 5 of the insulating substrate 1. Heat is transferred only through part X). Therefore, it is effective for making the temperature of the mounting region 2 more uniform.

また、図4〜図6に示す例のように、低熱伝導部5が、実装領域2の下の絶縁基板1の内部に形成されていてもよい。このような場合には、橋部Xをより小さくできるので、実装領域2の下部から熱が外部へと伝わりにくくなる。従って、実装された電子部品の一部が発熱したとしても熱が外部により伝わりにくくなって、実装領域2の温度をより均一にできる。また、絶縁基板1の厚みを薄くした場合には、絶縁基板1の平面方向に伝導する熱よりも、絶縁基板1の厚み方向へ伝導する熱の方が多くなるため、実装領域2の下の絶縁基板1に低熱伝導部5を設けることがより効果的である。   Further, as in the example illustrated in FIGS. 4 to 6, the low thermal conductive portion 5 may be formed inside the insulating substrate 1 below the mounting region 2. In such a case, since the bridge portion X can be made smaller, it is difficult for heat to be transmitted to the outside from the lower portion of the mounting region 2. Therefore, even if a part of the mounted electronic component generates heat, the heat is hardly transmitted to the outside, and the temperature of the mounting region 2 can be made more uniform. Further, when the thickness of the insulating substrate 1 is reduced, the heat conducted in the thickness direction of the insulating substrate 1 is larger than the heat conducted in the planar direction of the insulating substrate 1. It is more effective to provide the low thermal conduction portion 5 on the insulating substrate 1.

また、図4に示す例のように、平面透視で低熱伝導部5が実装領域2よりも小さく形成されている場合には、実装領域2の下部の絶縁基板1の厚みを小さくできるので、絶縁基板1の温度を均一にするのに有効である。また、実装領域2の下の絶縁基板1に低熱伝導部5が設けられていない場合に比べて、低熱伝導部5の下面側で、実装領域2と低熱伝導部5の外側とをつなぐ部分が長くなることから、絶縁基板1の下面側からより熱が伝わりにくくなる。   Further, as in the example shown in FIG. 4, when the low thermal conductivity portion 5 is formed to be smaller than the mounting region 2 in a plan view, the thickness of the insulating substrate 1 below the mounting region 2 can be reduced. This is effective for making the temperature of the substrate 1 uniform. Moreover, compared with the case where the low heat conduction part 5 is not provided in the insulated substrate 1 under the mounting area | region 2, the part which connects the mounting area 2 and the outer side of the low heat conduction part 5 in the lower surface side of the low heat conduction part 5 is. Since it becomes long, it becomes difficult to transmit heat from the lower surface side of the insulating substrate 1.

また、図5に示す例のように、実装領域2の下の低熱伝導部5と平面視で実装領域2の周囲の低熱伝導部5とがつながるようにした場合には、実装領域2の下の低熱伝導部5に
熱が溜まりにくくなるので、実装領域2の温度を下げつつ均一にするのに有効である。
Further, as shown in the example of FIG. 5, when the low thermal conductivity portion 5 below the mounting region 2 and the low thermal conductivity portion 5 around the mounting region 2 are connected in plan view, Since heat is unlikely to accumulate in the low heat conducting portion 5, it is effective for making the mounting region 2 uniform while lowering the temperature.

また、図6に示す例のように、低熱伝導部5が配線基板の下面に開口していてもよい。このような場合には、図4および図5に示す例に比べて加工が容易である。   Further, as in the example shown in FIG. 6, the low thermal conductive portion 5 may be opened on the lower surface of the wiring board. In such a case, processing is easier than in the examples shown in FIGS.

また、図7に示す例のように、絶縁基板1の低熱伝導部5同士の間にヒーター6が配置されている場合には、ヒーター6によって橋部Xを加熱して、橋部Xの温度を実装される電子部品の温度以上とすることができる。電子部品の温度はヒーター6の温度以下となるので、電子部品の熱は橋部Xを介して外部に伝わることがない。従って、実装領域2の温度をより均一にできる配線基板となる。   Moreover, when the heater 6 is arrange | positioned between the low heat conductive parts 5 of the insulated substrate 1 like the example shown in FIG. 7, the bridge part X is heated with the heater 6, and the temperature of the bridge part X is shown. The temperature can be higher than the temperature of the electronic component to be mounted. Since the temperature of the electronic component is equal to or lower than the temperature of the heater 6, the heat of the electronic component is not transmitted to the outside through the bridge portion X. Therefore, a wiring board capable of making the temperature of the mounting region 2 more uniform is obtained.

絶縁基板1は、セラミックスや樹脂等の絶縁体から成るものである。セラミックスから成る場合は、例えば、酸化アルミニウム質焼結体(アルミナセラミックス),窒化アルミニウム質焼結体,ムライト質焼結体およびガラスセラミックス質焼結体等が挙げられ、樹脂からなる場合は、例えば、エポキシ樹脂,ポリイミド樹脂,アクリル樹脂,フェノール樹脂,ポリエステル樹脂、および四フッ化エチレン樹脂を始めとするフッ素系樹脂等が挙げられる。また、ガラスエポキシ樹脂のように、ガラス繊維から成る基材に樹脂を含浸させたものが挙げられる。   The insulating substrate 1 is made of an insulator such as ceramics or resin. When made of ceramics, for example, aluminum oxide sintered bodies (alumina ceramics), aluminum nitride sintered bodies, mullite sintered bodies, glass ceramic sintered bodies, and the like can be mentioned. , Fluororesins such as epoxy resin, polyimide resin, acrylic resin, phenol resin, polyester resin, and tetrafluoroethylene resin. Moreover, what impregnated resin to the base material which consists of glass fibers like glass epoxy resin is mentioned.

絶縁基板1が、例えば、酸化アルミニウム質焼結体からなる場合には、アルミナ(Al),シリカ(SiO),カルシア(CaO)およびマグネシア(MgO)等の原料粉末に適当な有機溶剤および溶媒を添加混合して泥漿状となすとともに、これを従来周知のドクターブレード法やカレンダーロール法等を採用してシート状に成形することによってセラミックグリーンシートを得て、次に、セラミックグリーンシートに適当な打ち抜き加工を施すとともに必要に応じて複数枚積層し、高温(約1500〜1800℃)で焼成することによって製作される。図8(b)に示す例のように配線基板に凹部が設けられる場合には、絶縁基板1用のセラミックグリーンシートのいくつかに、凹部用の貫通孔を金型やパンチングによる打ち抜き方法またはレーザー加工方法等により形成しておくことによって形成することができる。また、図8(b)では複数の凹部が設けられているが、これはセラミックグリーンシートに、大きさが異なる凹部用の貫通孔を形成しておき、これらのセラミックグリーンシートを積層することによって複数の凹部を形成することができる。 When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, organic materials suitable for raw material powders such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), and magnesia (MgO) are used. A ceramic green sheet is obtained by adding a solvent and a solvent to form a slurry, and forming this into a sheet using a conventionally known doctor blade method, calendar roll method, etc. The sheet is manufactured by performing an appropriate punching process, stacking a plurality of sheets as necessary, and firing at a high temperature (about 1500 to 1800 ° C.). When a recess is provided in the wiring board as in the example shown in FIG. 8B, a through hole for the recess is punched out by a mold or punching or laser in some of the ceramic green sheets for the insulating substrate 1. It can be formed by forming by a processing method or the like. Further, in FIG. 8B, a plurality of recesses are provided, which are formed by forming through holes for recesses having different sizes in a ceramic green sheet and laminating these ceramic green sheets. A plurality of recesses can be formed.

絶縁基板1が、例えば、樹脂から成る場合は、所定の配線基板の形状に成形できるような金型を用いて、トランスファーモールド法やインジェクションモールド法等によって成形することができる。また、例えば、ガラスエポキシ樹脂のように、ガラス繊維から成る基材に樹脂を含浸させたものであってもよく、この場合は、ガラス繊維から成る基材にエポキシ樹脂の前駆体を含浸させ、このエポキシ樹脂前駆体を所定の温度で熱硬化させることによって形成することができる。低熱伝導部5を配線基板の内部に形成する場合には、複数の金型を用いて所定の形状に整形した後、それらを接着剤等を用いて張り合わせて配線基板とすればよい。樹脂からなる絶縁基板1を用いて配線基板にヒーター6を設ける場合には、樹脂は耐熱性を有していることが好ましい。   When the insulating substrate 1 is made of, for example, a resin, it can be molded by a transfer molding method, an injection molding method, or the like using a mold that can be molded into a predetermined wiring board shape. Further, for example, a glass fiber base material impregnated with a resin, such as glass epoxy resin, in this case, a glass fiber base material is impregnated with an epoxy resin precursor, The epoxy resin precursor can be formed by thermosetting at a predetermined temperature. In the case where the low thermal conductive portion 5 is formed inside the wiring board, the low heat conduction part 5 may be shaped into a predetermined shape using a plurality of molds, and then bonded together using an adhesive or the like to form a wiring board. When the heater 6 is provided on the wiring board using the insulating substrate 1 made of resin, the resin preferably has heat resistance.

低熱伝導部5は、絶縁基板1に低熱伝導部5用の穴を形成しておき、この穴に絶縁基板1よりも熱伝導率の低い部材を充填することによって形成できる。熱伝導率の低い部材としては、絶縁基板1よりも熱伝導率の低い樹脂や使用環境の雰囲気(例えば空気)等を用いることができる。熱伝導率の低い樹脂としては、例えば、絶縁基板1がセラミックスからなる場合であれば、エポキシ樹脂,ポリイミド樹脂およびアクリル樹脂等の樹脂材料を用いることができる。なお、低熱伝導部5または絶縁基板1を金属やガラス等で封止して低熱伝導部5を真空状態とするとより効果的である。   The low thermal conductive portion 5 can be formed by forming a hole for the low thermal conductive portion 5 in the insulating substrate 1 and filling the hole with a member having a lower thermal conductivity than the insulating substrate 1. As the member having a low thermal conductivity, a resin having a thermal conductivity lower than that of the insulating substrate 1 or an atmosphere (for example, air) in a use environment can be used. As the resin having a low thermal conductivity, for example, if the insulating substrate 1 is made of ceramics, a resin material such as an epoxy resin, a polyimide resin, and an acrylic resin can be used. In addition, it is more effective when the low heat conductive part 5 or the insulating substrate 1 is sealed with a metal, glass, or the like to place the low heat conductive part 5 in a vacuum state.

また、低熱伝導部5は、図3に示す例のように、絶縁基板1の一部を貫通した貫通孔5aを有してもよいし、図7に示す例のように低熱伝導部5の全部が絶縁基板1を貫通していてもよい。このとき封止が必要な場合には、貫通孔5aに絶縁基板1よりも熱伝導率の低い封止材(ガラス,樹脂等)を入れていればよく、深さ方向の一部に封止できる程度に封止材を入れてもよい。封止材としては、例えば、低熱伝導部5に用いる熱伝導率の低い部材を用いることが出来る。このような場合には、貫通孔5aが形成されていない場合に比べて、低熱伝導部5の下面側で、実装領域2と低熱伝導部5の外側とをつなぐ部分の断面積が小さくなることから、より熱が外部に伝わりにくくなり、電子部品の高温部の熱が外部ではなく電子部品の低温部へと伝わりやすくなる。従って、実装領域2の温度をより均一にできる配線基板となる。また、貫通孔5aの深さ方向の一部に封止材を入れたときには、封止材を入れていない部分には使用環境の雰囲気が入るので、深さ方向の全部に封止材を入れたときに比べて低熱伝導部5の熱伝導率を低くできる。   Moreover, the low heat conductive part 5 may have the through-hole 5a which penetrated a part of the insulated substrate 1 like the example shown in FIG. 3, and the low heat conductive part 5 like the example shown in FIG. All may penetrate through the insulating substrate 1. If sealing is necessary at this time, a sealing material (glass, resin, etc.) having a lower thermal conductivity than that of the insulating substrate 1 may be put in the through hole 5a, and sealing is performed partially in the depth direction. You may put a sealing material as much as possible. As the sealing material, for example, a member having a low thermal conductivity used for the low thermal conductivity portion 5 can be used. In such a case, compared with the case where the through hole 5a is not formed, the cross-sectional area of the portion connecting the mounting region 2 and the outside of the low heat conductive portion 5 on the lower surface side of the low heat conductive portion 5 is reduced. Therefore, the heat is more difficult to be transmitted to the outside, and the heat of the high temperature part of the electronic component is not easily transmitted to the low temperature part of the electronic component. Therefore, a wiring board capable of making the temperature of the mounting region 2 more uniform is obtained. Moreover, when the sealing material is put in a part of the through hole 5a in the depth direction, the atmosphere of the operating environment enters the part where the sealing material is not put, so the sealing material is put in the whole depth direction. Compared to the case, the thermal conductivity of the low thermal conduction part 5 can be lowered.

また、低熱伝導部5は、絶縁基板1がセラミックスからなる場合であれば、低熱伝導部5となる貫通孔を形成したセラミックグリーンシートを複数作製しておき、これらのセラミックグリーンシートを適当な順序で積層して焼成することで低熱伝導部5となる穴を形成できる。また、低熱伝導部5の大きさは、焼成時に低熱伝導部5の開口部が閉じてしまうことを防ぐために、低熱伝導部5が溝状の場合は幅0.1mm〜0.5mm程度、平板状の場合は厚み0.1mm〜0.5mm程度にすることが好ましい。また、絶縁基板1が、樹脂から成る場合は、低熱伝導部5用の穴を成形できるような金型を用いて、上記したトランスファーモールド法やインジェクションモールド法等によって形成することができる。   Moreover, if the insulating substrate 1 is made of ceramics, the low thermal conductive portion 5 is prepared by preparing a plurality of ceramic green sheets having through holes to be the low thermal conductive portions 5, and arranging these ceramic green sheets in an appropriate order. A hole to be the low heat conduction portion 5 can be formed by stacking and firing. In addition, the size of the low heat conduction part 5 is about 0.1 mm to 0.5 mm in width when the low heat conduction part 5 is grooved to prevent the opening of the low heat conduction part 5 from being closed during firing. In this case, the thickness is preferably about 0.1 mm to 0.5 mm. Further, when the insulating substrate 1 is made of resin, it can be formed by a transfer mold method, an injection mold method, or the like using a mold capable of forming a hole for the low heat conduction portion 5.

また、絶縁基板1がセラミックスからなる場合には、実装領域2の下の絶縁基板1内の低熱伝導部5が密封された状態で、配線基板となる積層体を焼成すると、低熱伝導部5の内部の物質が膨張して、絶縁基板1を変形させたり破損したりすることがあるので、低熱伝導部5を開口しておくことが好ましい。実装領域2の下の絶縁基板1内の低熱伝導部5の開口部は、平面視で実装領域2の周囲に実装領域2を囲むように形成された低熱伝導部5用の穴の内面に位置するようにしておけばよい。また、低熱伝導部5に開口を設けて複数のセラミックグリーンシートを焼成して複数の配線基板を得た後、この複数の配線基板を導電性樹脂(異方性導電樹脂等)等を用いて接合することで低熱伝導部5が密封された配線基板を得ても構わない。   Further, when the insulating substrate 1 is made of ceramics, when the laminated body that becomes the wiring substrate is fired in a state where the low thermal conductive portion 5 in the insulating substrate 1 under the mounting region 2 is sealed, the low thermal conductive portion 5 Since the internal substance may expand and deform or damage the insulating substrate 1, it is preferable to open the low heat conducting portion 5. The opening of the low thermal conductive portion 5 in the insulating substrate 1 below the mounting region 2 is located on the inner surface of the hole for the low thermal conductive portion 5 formed so as to surround the mounting region 2 around the mounting region 2 in plan view. Just do it. Further, after providing a plurality of ceramic green sheets by providing openings in the low thermal conductive portion 5 to obtain a plurality of wiring boards, the plurality of wiring boards are made of a conductive resin (anisotropic conductive resin or the like) or the like. You may obtain the wiring board by which the low heat conductive part 5 was sealed by joining.

橋部Xは断面積を小さくするとともに、数を少なくすることが好ましい。しかしながら、低熱伝導部5が真空または気体である場合には、橋部Xの断面積を小さくするとともに橋部Xの数を少なくすると、橋部Xが衝撃等で破損する可能性が高くなるため、橋部Xは平面視で1mm×1mm程度の角柱状で2〜4箇所程度にすることが好ましい。なお、角柱状の橋部は角部を面取りしておくと橋部Xが衝撃等で破壊されることを抑制できるので好ましい。また、低熱伝導部5に例えば樹脂が充填されており、十分な強度が確保できる場合には、上記寸法の橋部Xを1箇所に設けてもよい。   It is preferable to reduce the number of bridge portions X while reducing the cross-sectional area. However, when the low thermal conductivity portion 5 is vacuum or gas, reducing the cross-sectional area of the bridge portion X and reducing the number of the bridge portions X increases the possibility that the bridge portion X will be damaged by impact or the like. In addition, the bridge portion X is preferably in the shape of a prism having a size of about 1 mm × 1 mm in plan view and about 2 to 4 places. In addition, it is preferable that the prismatic bridge portion be chamfered because the corner portion X can be prevented from being broken by an impact or the like. Moreover, when the low heat conductive part 5 is filled with resin, for example, and sufficient strength can be secured, the bridge part X having the above dimensions may be provided at one place.

接続電極3は、絶縁基板1の低熱伝導部5の外側に配置されていることが好ましい。このように接続電極3を配置することで、熱が外部端子である配線導体4を通して外部から入って、金属であり高熱伝導の配線導体4を伝って実装領域2に伝わることがない。また、配線導体4が橋部Xを通らないので、配線導体4の配置が容易である。   The connection electrode 3 is preferably disposed outside the low thermal conductive portion 5 of the insulating substrate 1. By arranging the connection electrode 3 in this way, heat does not enter from the outside through the wiring conductor 4 which is an external terminal, and is not transmitted to the mounting region 2 through the wiring conductor 4 which is a metal and has high thermal conductivity. Moreover, since the wiring conductor 4 does not pass through the bridge portion X, the arrangement of the wiring conductor 4 is easy.

外部端子となる配線導体4は、絶縁基板1の低熱伝導部5の外側に配置されていることが好ましい。熱の入ってくる外部端子が実装領域2の外側にあるので、実装領域2の周囲の低熱伝導部5によって、実装領域2へ熱が伝わることを抑制するのにより効果的である。なお、実装領域2の下の絶縁基板1内に低熱伝導部5がある場合には、実装領域2と外部端子となる配線導体4との間に低熱伝導部5が位置するように外部端子を配置すれば良
い。
The wiring conductor 4 serving as an external terminal is preferably arranged outside the low heat conducting portion 5 of the insulating substrate 1. Since the external terminal into which heat enters is located outside the mounting region 2, it is more effective to suppress the heat from being transferred to the mounting region 2 by the low heat conduction portion 5 around the mounting region 2. When the low thermal conductive portion 5 is present in the insulating substrate 1 below the mounting region 2, external terminals are arranged so that the low thermal conductive portion 5 is located between the mounting region 2 and the wiring conductor 4 serving as an external terminal. Just place it.

接続電極3および配線導体4は、絶縁基板1がセラミックスから成る場合は、タングステン(W),モリブデン(Mo),マンガン(Mn),銀(Ag),銅(Cu)等の金属粉末メタライズから成り、絶縁基板1用のセラミックグリーンシートに配線導体4用の導体ペーストをスクリーン印刷法等により所定形状で印刷して、絶縁基板1用のセラミックグリーンシートと同時に焼成することによって、配線基板の所定位置に形成される。内部導体のうち、セラミックグリーンシートを厚み方向に貫通する貫通導体は、導体ペーストを印刷することによってセラミックグリーンシートに形成した貫通孔を充填しておけばよい。このような導体ペーストは、上記金属粉末に適当な溶剤とバインダーとを加えて混練することによって、適度な粘度に調整して作製される。配線基板との接合強度を高めるために、ガラスやセラミックスを含んでいても構わない。   When the insulating substrate 1 is made of ceramic, the connection electrode 3 and the wiring conductor 4 are made of metal powder metallization such as tungsten (W), molybdenum (Mo), manganese (Mn), silver (Ag), and copper (Cu). The conductor paste for the wiring conductor 4 is printed in a predetermined shape on the ceramic green sheet for the insulating substrate 1 by a screen printing method or the like, and is fired simultaneously with the ceramic green sheet for the insulating substrate 1, whereby a predetermined position on the wiring substrate is obtained. Formed. Of the internal conductors, the through conductor that penetrates the ceramic green sheet in the thickness direction may be filled with a through hole formed in the ceramic green sheet by printing a conductor paste. Such a conductive paste is prepared by adding an appropriate solvent and a binder to the metal powder and kneading them to adjust to an appropriate viscosity. In order to increase the bonding strength with the wiring board, glass or ceramics may be included.

また、接続電極3および配線導体4は、絶縁基板1が樹脂から成る場合には、銅,金,アルミニウム,ニッケル,クロム,モリブデン,チタンおよびそれらの合金等の金属材料から成る。例えば、ガラスエポキシ樹脂から成る樹脂シート上に接続電極3,配線導体4の形状に加工した銅箔を転写し、銅箔が転写された樹脂シートを積層して接着剤で接着することによって形成する。内部導体のうち、樹脂シートを厚み方向に貫通する貫通導体は、導体ペーストの印刷やめっき法によって樹脂シートに形成した貫通孔の内面に被着形成するか、貫通孔を充填して形成すればよい。また、金属箔や金属柱を樹脂成形によって一体化させたり、絶縁基板1にスパッタリング法,蒸着法等,めっき法等を用いて被着させたりして形成される。   Further, when the insulating substrate 1 is made of resin, the connection electrode 3 and the wiring conductor 4 are made of a metal material such as copper, gold, aluminum, nickel, chromium, molybdenum, titanium, and alloys thereof. For example, the copper foil processed into the shape of the connection electrode 3 and the wiring conductor 4 is transferred onto a resin sheet made of glass epoxy resin, and the resin sheet to which the copper foil is transferred is laminated and bonded with an adhesive. . Of the internal conductors, the through conductors that penetrate the resin sheet in the thickness direction can be deposited on the inner surface of the through holes formed in the resin sheet by conductor paste printing or plating, or by filling the through holes. Good. Further, it is formed by integrating a metal foil or a metal column by resin molding, or by depositing the insulating substrate 1 using a sputtering method, a vapor deposition method, a plating method or the like.

ヒーター6は、ニッケル−クロム系合金(ニクロム線),クロム−アルミニウム−鉄系合金(カンタル線),モリブデン(Mo),タンタル(Ta)またはタングステン(W)などの抵抗発熱体を用いることができる。このようなヒーター6は、配線導体4と同材料、即ち絶縁基板1がセラミックスから成る場合には、例えばモリブデンやタングステン等を用いて同時に形成すると、生産性を向上できるので好ましい。このような場合には、配線導体4を橋部Xで渦状やミアンダ状に形成することによって発熱量を他の配線導体4よりも大きくしてヒータ6とすればヒータ6を容易に形成できる。また、図7に示した例のように、ヒーター6と実装領域2との間に低熱伝導部5として貫通孔5aが配置されていてもよい。このような場合には、ヒーター6と実装領域2との間に貫通孔5aが設けられているために、ヒーター6によって実装領域2が過剰に加熱されてしまうことを確実に防ぐことができると同時に、橋部Xから外部へと熱が伝わることを防ぐことができるので好ましい。また、ヒーター6は橋部Xの絶縁基板1の内部に設けられていると、橋部Xの絶縁基板1の全体を加熱できるので、絶縁基板1を介して実装領域2と実装領域2の周囲との間に熱が伝わることを抑制するのに効果的である。絶縁基板1がセラミックグリーンシートを複数枚重ねて作られる場合には、セラミックグリーンシート上にヒーター6となる導体ペーストを例えばスクリーン印刷等で形成した後、さらにセラミックグリーンシートを積層することで、ヒーター6を絶縁基板1の内部に容易に形成することができる。   As the heater 6, a resistance heating element such as a nickel-chromium alloy (nichrome wire), a chromium-aluminum-iron alloy (kanthal wire), molybdenum (Mo), tantalum (Ta), or tungsten (W) can be used. . When such a heater 6 is formed of the same material as that of the wiring conductor 4, that is, the insulating substrate 1 is made of ceramics, it is preferable to simultaneously form the heater 6 using, for example, molybdenum, tungsten or the like because productivity can be improved. In such a case, the heater 6 can be easily formed by forming the wiring conductor 4 in a vortex shape or a meandering shape at the bridge portion X so that the amount of heat generated is larger than that of the other wiring conductors 4. Moreover, the through-hole 5a may be arrange | positioned as the low heat conductive part 5 between the heater 6 and the mounting area | region 2 like the example shown in FIG. In such a case, since the through-hole 5a is provided between the heater 6 and the mounting region 2, it is possible to reliably prevent the mounting region 2 from being excessively heated by the heater 6. At the same time, it is preferable because heat can be prevented from being transmitted from the bridge portion X to the outside. Further, if the heater 6 is provided inside the insulating substrate 1 of the bridge portion X, the entire insulating substrate 1 of the bridge portion X can be heated, so that the surroundings of the mounting region 2 and the mounting region 2 are interposed via the insulating substrate 1. It is effective to suppress the transmission of heat between the two. In the case where the insulating substrate 1 is made by stacking a plurality of ceramic green sheets, a conductor paste to be the heater 6 is formed on the ceramic green sheets by, for example, screen printing, and then the ceramic green sheets are further laminated to form a heater. 6 can be easily formed inside the insulating substrate 1.

接続電極3および配線導体4の露出する表面には、電解めっき法や無電解めっき法等のめっき法によって、めっき層が被着される。めっき層は、ニッケルおよび金等の耐蝕性や接続部材8との接続性に優れる金属からなるものであり、例えば、厚さ1〜10μm程度のニッケルめっき層と厚さ0.1〜3μm程度の金めっき層とが順次被着される。これにより
、接続電極3および配線導体4が腐食することを効果的に抑制することができるとともに、接続電極3と接続部材8との接合、外部に露出した配線導体4と外部回路基板の配線導体との接続を強固にすることができる。
A plating layer is deposited on the exposed surfaces of the connection electrode 3 and the wiring conductor 4 by a plating method such as an electrolytic plating method or an electroless plating method. The plating layer is made of a metal having excellent corrosion resistance, such as nickel and gold, and connectivity with the connection member 8, for example, a nickel plating layer having a thickness of about 1 to 10 μm and a gold plating having a thickness of about 0.1 to 3 μm. The layers are deposited sequentially. Accordingly, corrosion of the connection electrode 3 and the wiring conductor 4 can be effectively suppressed, the connection electrode 3 and the connection member 8 are joined, the wiring conductor 4 exposed to the outside, and the wiring conductor of the external circuit board. Can be strengthened.

また、本発明の撮像装置は図8(a)および図8(b)に示す例のように、上記各構成
の配線基板の実装領域2に撮像素子7が実装されていることを特徴とするものである。このような構成としたことから、小型でムラのない画像信号を出力することが可能な撮像装置となる。
Further, the image pickup apparatus of the present invention is characterized in that an image pickup element 7 is mounted in the mounting region 2 of the wiring board having the above-described configurations as in the example shown in FIGS. Is. With such a configuration, the imaging device can output a small and uniform image signal.

図8に示す例の撮像装置は、上記各構成の配線基板の実装領域2に、撮像素子7を配置して、接続部材8を用いて撮像素子7と接続電極3とを電気的に接続している。図8に示す例のように、撮像素子7を配線基板にワイヤボンディングによって実装した場合には、接続部材8としてボンディングワイヤを用いることから、接続部材8が細く、接続部材8を伝わって熱が外部に伝わることが抑えられるので好ましい。   In the imaging apparatus of the example shown in FIG. 8, the imaging element 7 is disposed in the mounting area 2 of the wiring board having the above-described configuration, and the imaging element 7 and the connection electrode 3 are electrically connected using the connection member 8. ing. When the imaging device 7 is mounted on the wiring board by wire bonding as in the example shown in FIG. 8, since the bonding wire is used as the connection member 8, the connection member 8 is thin, and heat is transmitted through the connection member 8. This is preferable because it can be prevented from being transmitted to the outside.

例えば電子部品がフリップチップ型の撮像素子7である場合には、はんだバンプ,金バンプまたは導電性樹脂(異方性導電樹脂等)等の接続部材8を介して、撮像素子7の電極と接続電極3とを電気的および機械的に接続することにより行なわれる。またこの場合は、接続部材8であるバンプを介して接続した後に、撮像素子7と実装領域2との間にアンダーフィルを注入してもよい。あるいは、図8に示す例のように、例えば撮像素子7がワイヤボンディングによって配線基板に電気的に接続されている場合には、撮像素子7をガラス,樹脂あるいはろう材等の接合材によって実装領域2に固定した後、接続部材8であるボンディングワイヤを介して撮像素子7の電極と接続電極3とを電気的に接続する。また、いずれの場合も、必要に応じて配線基板に抵抗素子や容量素子等の小型の電子部品を搭載してもよい。   For example, when the electronic component is a flip-chip type image pickup device 7, it is connected to the electrode of the image pickup device 7 through a connection member 8 such as a solder bump, a gold bump, or a conductive resin (anisotropic conductive resin or the like). This is performed by electrically and mechanically connecting the electrode 3. In this case, an underfill may be injected between the image sensor 7 and the mounting region 2 after connecting via the bumps that are the connecting members 8. Alternatively, as in the example shown in FIG. 8, for example, when the image sensor 7 is electrically connected to the wiring board by wire bonding, the image sensor 7 is mounted by a bonding material such as glass, resin, or brazing material. After fixing to 2, the electrode of the image sensor 7 and the connection electrode 3 are electrically connected via a bonding wire which is the connection member 8. In either case, a small electronic component such as a resistor element or a capacitor element may be mounted on the wiring board as necessary.

また、図8(a)に示す例のように撮像装置が蓋体9を備える場合には、蓋体9は、透光性部材10を備え、樹脂,セラミックスまたはガラス等からなり、透光性部材10が配置される開口部を設けた箱状に形成されている。蓋体9としては絶縁基板1の熱膨張係数に近い熱膨張係数を有するもの、耐熱性を有するもの、加工がしやすいものが好ましく、例えば絶縁基板1が酸化アルミニウム質焼結体から成り、蓋体9に樹脂から成るものを用いる場合であれば、フェノール樹脂,メラミン樹脂,ポリプロピレン,ポリスチレン,ABS樹脂等から成るものを用いるとよい。また、撮像素子7として、赤外線撮像素子を実装する場合であれば、透光性部材10または蓋体9としてゲルマニウム(Ge),シリコン(Si),硫化亜鉛(ZnS)またはこれらを含む合金からなる金属材料を用いるとよい。   8A, when the imaging device includes the lid 9, the lid 9 includes a translucent member 10 and is made of resin, ceramics, glass, or the like, and is translucent. It is formed in a box shape provided with an opening in which the member 10 is disposed. The lid 9 preferably has a thermal expansion coefficient close to the thermal expansion coefficient of the insulating substrate 1, has heat resistance, and is easily processed. For example, the insulating substrate 1 is made of an aluminum oxide sintered body, If the body 9 is made of a resin, a resin made of phenol resin, melamine resin, polypropylene, polystyrene, ABS resin or the like may be used. If an infrared imaging device is mounted as the imaging device 7, the translucent member 10 or the lid 9 is made of germanium (Ge), silicon (Si), zinc sulfide (ZnS), or an alloy containing these. A metal material may be used.

このような蓋体9は、樹脂から成る場合は、所定の蓋体9の形状に成形できるような金型を用いて、トランスファーモールド法やインジェクションモールド法等により形成した後、透光性部材10を所定の位置に配置して作製する。また、蓋体9は、所望の形状に応じて複数の部材に分割して形成した後、それぞれを組み立てても構わない。そのような場合には、要求される性質に応じて複数の樹脂を組み合わせることが可能であるとともに、透光性部材10の配置が容易になる。   When such a lid 9 is made of resin, it is formed by a transfer mold method, an injection mold method, or the like using a mold that can be molded into the shape of the predetermined lid 9, and then the translucent member 10. Are prepared at predetermined positions. Further, the lid body 9 may be divided into a plurality of members according to a desired shape and then assembled. In such a case, it is possible to combine a plurality of resins according to the required properties, and the arrangement of the translucent member 10 is facilitated.

接合材11は、熱硬化性や光硬化性等のアクリル系樹脂,エポキシ系樹脂,フェノール系樹脂,クレゾール系樹脂,シリコーン系樹脂またはポリエーテルアミド系樹脂等の樹脂材料を用いることができる。また、接合材11には、必要に応じて黒色,茶褐色,暗褐色,暗緑色または濃青色等の暗色系の顔料や染料を混入しても構わない。撮像装置に、不所望の可視光が接合材11を透過して侵入するのを遮断することができる。   As the bonding material 11, a resin material such as an acrylic resin, an epoxy resin, a phenol resin, a cresol resin, a silicone resin, or a polyether amide resin, such as thermosetting or photocurable, can be used. The bonding material 11 may be mixed with dark pigments or dyes such as black, brown, dark brown, dark green, or dark blue as necessary. It is possible to block unwanted visible light from entering the imaging apparatus through the bonding material 11.

絶縁基板1と蓋体9との接合は、例えば、次のようにして行なわれる。まず、絶縁基板1の外周部に絶縁性樹脂からなる硬化前の接合材11をディスペンサー等を用いて塗布する。その後、硬化前の接合材11上に蓋体9を配置し、硬化前の接合材11を加熱あるいは紫外線照射して硬化することにより、配線基板と蓋体9とを接合材11を介して接合する。   The insulating substrate 1 and the lid body 9 are joined, for example, as follows. First, the uncured bonding material 11 made of an insulating resin is applied to the outer peripheral portion of the insulating substrate 1 using a dispenser or the like. Thereafter, the lid body 9 is disposed on the bonding material 11 before curing, and the wiring substrate and the lid body 9 are bonded via the bonding material 11 by curing the bonding material 11 before curing by heating or ultraviolet irradiation. To do.

また、蓋体9が金属材料である場合には、接合材11としてろう材またははんだ等を介し
て絶縁基板1と接合する。接合材11としては、金(Au),銀(Ag),亜鉛(Zn),すず(Sn),銅(Cu)およびこれらの合金を主成分とする金属を用いることができる。
When the lid 9 is a metal material, the lid 9 is joined to the insulating substrate 1 via a brazing material or solder as the joining material 11. As the bonding material 11, gold (Au), silver (Ag), zinc (Zn), tin (Sn), copper (Cu), and a metal mainly composed of these alloys can be used.

なお、本発明は上述の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。   Note that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention.

例えば、低熱伝導部5の角部は曲面形状にRがつけられていても構わない。このような場合には、低熱伝導部5の角部を起点として配線基板にクラックが生じ、橋部Xのような配線基板が細くなっている箇所が破壊されてしまうことを抑制することができる。   For example, the corner portion of the low heat conducting portion 5 may have a curved surface with an R. In such a case, it is possible to suppress the occurrence of cracks in the wiring board starting from the corners of the low heat conducting portion 5 and the destruction of the narrowed wiring board such as the bridge portion X. .

また、例えば低熱伝導部5となる穴部の内周面には赤外線を反射するような金属被膜を形成しておいても構わない。このような場合には、低熱伝導部5に赤外線が照射されることによって絶縁基板1が加熱されることを防ぐことができる。このような金属被膜は、配線導体4と同様の材料を用いて配線導体と同時に形成しても構わないし、例えば蒸着によって形成しても構わない。なお、金属被膜を伝わって熱が伝導することを防ぐために、金属被膜は不連続に形成されていることが好ましい。   Further, for example, a metal film that reflects infrared rays may be formed on the inner peripheral surface of the hole that becomes the low thermal conductivity portion 5. In such a case, it is possible to prevent the insulating substrate 1 from being heated by irradiating the low thermal conductive portion 5 with infrared rays. Such a metal coating may be formed simultaneously with the wiring conductor using the same material as the wiring conductor 4, or may be formed by vapor deposition, for example. In order to prevent heat from being transmitted through the metal film, the metal film is preferably formed discontinuously.

また、図8(b)に示す例のように、配線基板に複数の凹部を設け、いわゆるキャビティ構造としてもよい。このような場合には、撮像素子7の受光部7aを埃や水分から保護するための封止を、平板状の透光性部材を用いて容易に行うことができるので好ましい。   Also, as in the example shown in FIG. 8B, a plurality of recesses may be provided on the wiring board to form a so-called cavity structure. In such a case, it is preferable because sealing for protecting the light receiving portion 7a of the image sensor 7 from dust and moisture can be easily performed using a flat light-transmitting member.

1・・・・配線基板
2・・・・実装領域
3・・・・接続電極
4・・・・配線導体
5・・・・低熱伝導部
5a・・・貫通孔
6・・・・ヒーター
7・・・・撮像素子
7a・・・受光部
8・・・・接続部材
X・・・・橋部
DESCRIPTION OF SYMBOLS 1 ... Wiring board 2 ... Mounting area 3 ... Connection electrode 4 ... Wiring conductor 5 ... Low heat conduction part 5a ... Through hole 6 ... Heater 7 ... ... Image sensor 7a ... Light receiving part 8 ... Connection member X ... Bridge part

Claims (4)

上面に実装領域を有する絶縁基板と、該絶縁基板の前記上面に配置された複数の接続電極と、一端が前記接続電極に接続されているとともに他端が前記絶縁基板の外表面に引き出されている配線導体とを備えた配線基板において、
前記実装領域の周囲に、前記実装領域を囲むように、前記絶縁基板よりも熱伝導率の小さい低熱伝導部が複数形成されており、
前記実装領域の下の前記絶縁基板内に、低熱伝導部がさらに形成されており、
前記実装領域の下の前記絶縁基板内に形成された前記低熱伝導部は、前記絶縁基板の下面にのみ開口していることを特徴とする配線基板。
An insulating substrate having a mounting area on the upper surface, a plurality of connection electrodes disposed on the upper surface of the insulating substrate, one end connected to the connection electrode and the other end drawn to the outer surface of the insulating substrate In a wiring board provided with a wiring conductor
Around the mounting region, a plurality of low thermal conductive parts having a lower thermal conductivity than the insulating substrate are formed so as to surround the mounting region ,
A low thermal conduction part is further formed in the insulating substrate under the mounting region,
The wiring board according to claim 1, wherein the low thermal conductive portion formed in the insulating substrate under the mounting region is opened only on a lower surface of the insulating substrate.
前記絶縁基板の前記低熱伝導部同士の間にヒーターが配置されていることを特徴とする請求項1に記載の配線基板。 The wiring board according to claim 1, wherein a heater is disposed between the low thermal conductive portions of the insulating substrate. 前記接続電極は、前記上面の前記低熱伝導部の外側に配置されていることを特徴とする請求項1または請求項2に記載の配線基板。 The connection electrode, the wiring board according to claim 1 or claim 2, characterized in that it is disposed outside of the low thermal conductive portion of the top surface. 請求項1乃至請求項3のいずれかに記載の配線基板の前記実装領域に撮像素子が実装されたことを特徴とする撮像装置。 Imaging apparatus characterized by imaging element is mounted on the mounting region of the wiring board according to any one of claims 1 to 3.
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