JP5599397B2 - オプトエレクトロニクス半導体素子およびその製造方法 - Google Patents
オプトエレクトロニクス半導体素子およびその製造方法 Download PDFInfo
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- JP5599397B2 JP5599397B2 JP2011520320A JP2011520320A JP5599397B2 JP 5599397 B2 JP5599397 B2 JP 5599397B2 JP 2011520320 A JP2011520320 A JP 2011520320A JP 2011520320 A JP2011520320 A JP 2011520320A JP 5599397 B2 JP5599397 B2 JP 5599397B2
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- 239000004065 semiconductor Substances 0.000 title claims description 89
- 230000005693 optoelectronics Effects 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims description 42
- 229920001296 polysiloxane Polymers 0.000 claims description 11
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 238000009718 spray deposition Methods 0.000 claims 1
- 230000008878 coupling Effects 0.000 description 18
- 238000010168 coupling process Methods 0.000 description 18
- 238000005859 coupling reaction Methods 0.000 description 18
- 238000007789 sealing Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 238000005266 casting Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 229920006268 silicone film Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
・接続用支持体を設けるステップ
・オプトエレクトロニクス半導体チップを前記接続用支持体の実装面に固定し、電気的にコンタクトするステップ
・前記オプトエレクトロニクス半導体チップを包囲するように透光体を形成するステップと、
・前記実装面に対して90°未満の角度で前記透光体をソーイングし、該透光体の側面を少なくとも局所的に形成するステップ。
Claims (7)
- ・接続用支持体(2)と
・前記接続用支持体(2)の実装面(22)に配置されたオプトエレクトロニクス半導体チップ(1)と、
・前記オプトエレクトロニクス半導体チップ(1)を包囲する透光体(3)と
を有するオプトエレクトロニクス半導体素子であって、
前記透光体(3)は、前記接続用支持体(2)に対向しない前記オプトエレクトロニクス半導体チップ(1)の外側面を形状接続的に被覆するように設けられており、
前記透光体(3)はシリコーンを含み、
前記透光体(3)は、該透光体(3)が角錐台の形状を有するよう、いずれも前記実装面(22)との間に角度(β)<90°を成す4つの側面(30)を有し、
該側面(30)は、前記接続用支持体(2)の前記実装面(22)に対し垂直ではなく、
前記側面(30)はダイシング工程の跡を有し、
前記4つの側面(30)の各々はすべて、斜行するソーイング工程によって形成されており、
前記透光体(3)の前記4つの側面(30)の各々に平坦化層(5)が設けられている、
ことを特徴とする、オプトエレクトロニクス半導体素子。 - 前記透光体(3)は、少なくとも局所的に前記実装面(22)との間に60°〜70°の間の角度(β)を成す少なくとも1つの側面(30)を有し、
前記少なくとも1つの側面(30)はダイシング工程によって形成されている、請求項1記載のオプトエレクトロニクス半導体素子。 - 前記透光体(3)は、それぞれ少なくとも局所的に前記実装面(22)との間に60°〜70°の間の角度(β)を成す少なくとも2つの側面(30)を有し、
前記少なくとも2つの側面(30)はダイシング工程によって形成されている、請求項1記載のオプトエレクトロニクス半導体素子。 - 前記透光体(3)は前記接続用支持体(2)の前記実装面(22)に直接接する、請求項1から3までのいずれか1項記載のオプトエレクトロニクス半導体素子。
- 前記接続用支持体(2)は、セラミック材料によって形成されたボディ(20)を有し、
前記ボディ(20)の厚さ(D)は最大250μmである、請求項1から4までのいずれか1項記載のオプトエレクトロニクス半導体素子。 - 請求項1から5までのいずれか1項記載のオプトエレクトロニクス半導体素子の製造方法であって、
・接続用支持体(2)を設けるステップと、
・オプトエレクトロニクス半導体チップ(1)を前記接続用支持体(2)の実装面(22)に固定して電気的にコンタクトするステップと、
・前記オプトエレクトロニクス半導体チップ(1)を包囲するように透光体(3)を形成するステップと、
・前記接続用支持体(2)の前記実装面(22)との間で角度<90°を成すように前記透光体(3)の4つの側面(30)各々をすべてソーイングして、該透光体(3)の側面(30)を形成するステップ
とを有することを特徴とする、製造方法。 - ソーイングによって形成された前記透光体(3)の前記側面(30)に平坦化層(5)をスプレー成膜法によって設ける、請求項6記載の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008035255.1A DE102008035255B4 (de) | 2008-07-29 | 2008-07-29 | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102008035255.1 | 2008-07-29 | ||
PCT/DE2009/000988 WO2010012264A1 (de) | 2008-07-29 | 2009-07-15 | Optoelektronisches halbleiterbauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011529628A JP2011529628A (ja) | 2011-12-08 |
JP5599397B2 true JP5599397B2 (ja) | 2014-10-01 |
Family
ID=41172487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011520320A Active JP5599397B2 (ja) | 2008-07-29 | 2009-07-15 | オプトエレクトロニクス半導体素子およびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US9099622B2 (ja) |
EP (1) | EP2308105B1 (ja) |
JP (1) | JP5599397B2 (ja) |
KR (1) | KR101596534B1 (ja) |
CN (2) | CN105977367A (ja) |
DE (1) | DE102008035255B4 (ja) |
WO (1) | WO2010012264A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102242660B1 (ko) * | 2013-09-11 | 2021-04-21 | 엘지디스플레이 주식회사 | 발광 다이오드 소자 및 이를 포함하는 백라이트 유닛과 이의 제조 방법 |
DE102013111503B4 (de) * | 2013-10-18 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zur Vereinzelung von Halbleiterchips |
DE102016120635B4 (de) * | 2016-10-28 | 2021-12-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserbauelement und verfahren zum herstellen eines laserbauelements |
US10062817B1 (en) * | 2017-01-10 | 2018-08-28 | Rayvio Corporation | Ultraviolet emitting device with shaped encapsulant |
DE102017104871A1 (de) | 2017-03-08 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
EP4310927A1 (en) * | 2021-03-15 | 2024-01-24 | Nichia Corporation | Light-emitting device and surface light source |
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JP2002368277A (ja) * | 2001-06-05 | 2002-12-20 | Rohm Co Ltd | チップ型半導体発光装置 |
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-
2008
- 2008-07-29 DE DE102008035255.1A patent/DE102008035255B4/de active Active
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2009
- 2009-07-15 KR KR1020117004149A patent/KR101596534B1/ko active IP Right Grant
- 2009-07-15 CN CN201610289228.6A patent/CN105977367A/zh active Pending
- 2009-07-15 CN CN2009801295286A patent/CN102106005A/zh active Pending
- 2009-07-15 EP EP09775971.6A patent/EP2308105B1/de active Active
- 2009-07-15 US US13/056,811 patent/US9099622B2/en active Active
- 2009-07-15 JP JP2011520320A patent/JP5599397B2/ja active Active
- 2009-07-15 WO PCT/DE2009/000988 patent/WO2010012264A1/de active Application Filing
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2015
- 2015-07-07 US US14/793,096 patent/US9831394B2/en active Active
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- 2017-10-19 US US15/788,645 patent/US10580941B2/en active Active
Also Published As
Publication number | Publication date |
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US20180040781A1 (en) | 2018-02-08 |
EP2308105B1 (de) | 2019-09-04 |
EP2308105A1 (de) | 2011-04-13 |
KR101596534B1 (ko) | 2016-02-22 |
KR20110036130A (ko) | 2011-04-06 |
CN102106005A (zh) | 2011-06-22 |
JP2011529628A (ja) | 2011-12-08 |
US10580941B2 (en) | 2020-03-03 |
CN105977367A (zh) | 2016-09-28 |
WO2010012264A1 (de) | 2010-02-04 |
US20150311404A1 (en) | 2015-10-29 |
DE102008035255A1 (de) | 2010-03-11 |
US20110297999A1 (en) | 2011-12-08 |
US9099622B2 (en) | 2015-08-04 |
US9831394B2 (en) | 2017-11-28 |
DE102008035255B4 (de) | 2021-10-07 |
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