JP5599248B2 - 高効率マイクロ波増幅器 - Google Patents
高効率マイクロ波増幅器 Download PDFInfo
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- JP5599248B2 JP5599248B2 JP2010161455A JP2010161455A JP5599248B2 JP 5599248 B2 JP5599248 B2 JP 5599248B2 JP 2010161455 A JP2010161455 A JP 2010161455A JP 2010161455 A JP2010161455 A JP 2010161455A JP 5599248 B2 JP5599248 B2 JP 5599248B2
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- 238000000034 method Methods 0.000 claims description 30
- 230000001965 increasing effect Effects 0.000 claims description 21
- 230000004044 response Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000002679 ablation Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 9
- 230000001276 controlling effect Effects 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0233—Continuous control by using a signal derived from the output signal, e.g. bootstrapping the voltage supply
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Control Of Amplification And Gain Control (AREA)
- Surgical Instruments (AREA)
- Microwave Amplifiers (AREA)
Description
Claims (13)
- 電磁信号増幅器であって、
供給レールと帰還レールとの間に電気的に配置され、入力および出力を有する利得段と、
前記供給レールおよび前記帰還レールの少なくとも一方に動作可能に結合され、レール電圧制御信号に応答してレール電圧を供給するように構成されたレール電圧コントローラと、
前記利得段入力に動作可能に結合され、駆動制御信号に応答して前記利得段入力に入力信号を供給するように構成された駆動コントローラと、
前記電磁信号増幅器の動作パラメータを検出し、前記動作パラメータに対応するセンサ信号を供給するように構成された少なくとも1つのセンサと、
前記少なくとも1つのセンサ信号を受け取り、前記センサ信号に応答して、前記レール電圧コントローラへのレール電圧制御信号、および前記駆動コントローラへの駆動制御信号の少なくとも一方を供給するために適合された増幅器コントローラと、を有する電磁信号増幅器。 - 前記増幅器コントローラは、目標出力レベルに対応する入力を受信するために適合されている請求項1に記載の電磁信号増幅器。
- 前記利得段はプッシュプル構成に配置された少なくとも2つの利得素子を有する請求項1に記載の電磁信号増幅器。
- 前記少なくとも2つの利得素子は、トランジスタ、電界効果トランジスタ、および横方向拡散金属酸化物半導体からなる群から選択される請求項3に記載の電磁信号増幅器。
- 前記センサは出力電圧を検出するように構成されている請求項1に記載の電磁信号増幅器。
- 前記センサはバイアス電流を検出するように構成されている請求項1に記載の電磁信号増幅器。
- 前記増幅器コントローラは、
レール電圧を最小値に設定し、
駆動信号を最小振幅に設定し、
出力信号を測定し、
前記出力信号が所定の基準を満たすかどうかを判定し、
前記出力信号が前記所定の基準を満たさないと判定されると、前記駆動信号が最大値に設定されているかどうかを判定し、
前記駆動信号が最大値に設定されていないと判定されると、前記駆動信号を増加させ、
前記駆動信号が最大値に設定されていると判定されると、前記レール電圧を増加させる請求項1に記載の電磁信号増幅器。 - 請求項1〜7のいずれか1項に記載の電磁信号増幅器を制御するための方法であって、
レール電圧を最小値に設定するステップと、
駆動信号を最小振幅に設定するステップと、
出力信号を測定するステップと、
前記出力信号が所定の基準を満たすかどうかを判定するステップと、
前記出力信号が前記所定の基準を満たさないと判定されると、前記駆動信号が最大値に設定されているかどうかを判定するステップと、
前記駆動信号が最大値に設定されていないと判定されると、前記駆動信号を増加させるステップと、
前記駆動信号が最大値に設定されていると判定されると、前記レール電圧を増加させるステップと、を有する電磁信号増幅器を制御するための方法。 - 前記所定の基準はユーザ入力に応答して決定される請求項8に記載の方法。
- 前記最小レール電圧値は約0ボルト〜約30ボルトの範囲である請求項8に記載の方法。
- 前記最小レール電圧値は約14ボルトである請求項8に記載の方法。
- 前記出力基準は出力パワーである請求項8に記載の方法。
- 前記出力信号は、平方二乗平均、ピーク間、および移動平均測定の少なくとも1つによって評価される請求項8に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/504,738 US7863984B1 (en) | 2009-07-17 | 2009-07-17 | High efficiency microwave amplifier |
US12/504,738 | 2009-07-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011041265A JP2011041265A (ja) | 2011-02-24 |
JP5599248B2 true JP5599248B2 (ja) | 2014-10-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010161455A Expired - Fee Related JP5599248B2 (ja) | 2009-07-17 | 2010-07-16 | 高効率マイクロ波増幅器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7863984B1 (ja) |
EP (1) | EP2284989B1 (ja) |
JP (1) | JP5599248B2 (ja) |
AU (1) | AU2010203036B2 (ja) |
CA (2) | CA3014143C (ja) |
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US8069553B2 (en) | 2009-09-09 | 2011-12-06 | Vivant Medical, Inc. | Method for constructing a dipole antenna |
US9095359B2 (en) | 2009-09-18 | 2015-08-04 | Covidien Lp | Tissue ablation system with energy distribution |
US8556889B2 (en) | 2009-09-29 | 2013-10-15 | Covidien Lp | Flow rate monitor for fluid cooled microwave ablation probe |
US9113926B2 (en) | 2009-09-29 | 2015-08-25 | Covidien Lp | Management of voltage standing wave ratio at skin surface during microwave ablation |
US8568401B2 (en) | 2009-10-27 | 2013-10-29 | Covidien Lp | System for monitoring ablation size |
US8430871B2 (en) | 2009-10-28 | 2013-04-30 | Covidien Lp | System and method for monitoring ablation size |
US8382750B2 (en) | 2009-10-28 | 2013-02-26 | Vivant Medical, Inc. | System and method for monitoring ablation size |
US8551083B2 (en) | 2009-11-17 | 2013-10-08 | Bsd Medical Corporation | Microwave coagulation applicator and system |
US20110125148A1 (en) * | 2009-11-17 | 2011-05-26 | Turner Paul F | Multiple Frequency Energy Supply and Coagulation System |
US9993294B2 (en) * | 2009-11-17 | 2018-06-12 | Perseon Corporation | Microwave coagulation applicator and system with fluid injection |
US8394092B2 (en) | 2009-11-17 | 2013-03-12 | Vivant Medical, Inc. | Electromagnetic energy delivery devices including an energy applicator array and electrosurgical systems including same |
US8414570B2 (en) * | 2009-11-17 | 2013-04-09 | Bsd Medical Corporation | Microwave coagulation applicator and system |
US8764744B2 (en) | 2010-01-25 | 2014-07-01 | Covidien Lp | System for monitoring ablation size |
US8491579B2 (en) | 2010-02-05 | 2013-07-23 | Covidien Lp | Electrosurgical devices with choke shorted to biological tissue |
US8968288B2 (en) | 2010-02-19 | 2015-03-03 | Covidien Lp | Ablation devices with dual operating frequencies, systems including same, and methods of adjusting ablation volume using same |
US8617153B2 (en) | 2010-02-26 | 2013-12-31 | Covidien Lp | Tunable microwave ablation probe |
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-
2009
- 2009-07-17 US US12/504,738 patent/US7863984B1/en active Active
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2010
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- 2010-07-16 EP EP10007399.8A patent/EP2284989B1/en active Active
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- 2010-07-16 JP JP2010161455A patent/JP5599248B2/ja not_active Expired - Fee Related
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EP2284989B1 (en) | 2019-08-28 |
CA2710048A1 (en) | 2011-01-17 |
CA3014143C (en) | 2021-10-19 |
US20110012679A1 (en) | 2011-01-20 |
EP2284989A2 (en) | 2011-02-16 |
AU2010203036A1 (en) | 2011-02-03 |
CA3014143A1 (en) | 2011-01-17 |
AU2010203036B2 (en) | 2013-10-31 |
JP2011041265A (ja) | 2011-02-24 |
CA2710048C (en) | 2018-09-25 |
EP2284989A3 (en) | 2017-04-26 |
US7863984B1 (en) | 2011-01-04 |
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