JP5598189B2 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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JP5598189B2
JP5598189B2 JP2010201025A JP2010201025A JP5598189B2 JP 5598189 B2 JP5598189 B2 JP 5598189B2 JP 2010201025 A JP2010201025 A JP 2010201025A JP 2010201025 A JP2010201025 A JP 2010201025A JP 5598189 B2 JP5598189 B2 JP 5598189B2
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island
fixing member
mold
semiconductor device
pressing
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JP2012059885A (en
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浅井　　康富
直仁 水野
紘平 酒井
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Denso Corp
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Denso Corp
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Lead Frames For Integrated Circuits (AREA)

Description

本発明は、半導体素子を実装したアイランドに固定される固定部材の露出面が露出するように半導体素子およびアイランドが封止部材により封止される半導体装置の製造方法および半導体装置に関するものである。   The present invention relates to a semiconductor device manufacturing method and a semiconductor device in which a semiconductor element and an island are sealed by a sealing member so that an exposed surface of a fixing member fixed to the island on which the semiconductor element is mounted is exposed.

半導体素子を実装したアイランドに固定される固定部材の露出面を封止部材から露出させる場合に、この露出面にバリがでていると、当該露出面の密着性が悪くなり露出面を介した放熱性等が悪化してしまう。そこで、上記露出面でのバリの発生を防止するための半導体装置の製造方法として、下記特許文献１に開示される半導体装置の製造方法が知られている。この半導体装置の製造方法では、まず、ボンディングワイヤを用いて、パワーチップやフレーム等を接続するとともに、ＩＣチップおよびフレームを接続する。続いて、裏面に金属箔を取り付けた絶縁性の樹脂シートを準備し、樹脂封止用金型の内部の所定の位置に配置した後、パワーチップ等を実装したフレームを、フレームのダイパッド（アイランド）の裏面が樹脂シートの上面に接するように、樹脂封止用金型中の所定の位置に配置する。そして、型締時に押さえピンの先端にて、フレームのダイパッドを、樹脂シートの上面に押さえた状態で、加圧状態の封止用樹脂を樹脂封止用金型内に注入する。これにより、モールド樹脂の裏面から金属箔が露出する部位でのバリの発生を防止する。   When the exposed surface of the fixing member fixed to the island on which the semiconductor element is mounted is exposed from the sealing member, if the exposed surface has burrs, the adhesiveness of the exposed surface is deteriorated and the exposed surface is interposed. Heat dissipation etc. will deteriorate. Therefore, as a method for manufacturing a semiconductor device for preventing the occurrence of burrs on the exposed surface, a method for manufacturing a semiconductor device disclosed in Patent Document 1 is known. In this method of manufacturing a semiconductor device, first, a bonding chip is used to connect a power chip, a frame, and the like, and an IC chip and a frame are connected. Subsequently, an insulating resin sheet having a metal foil attached to the back surface was prepared, placed at a predetermined position inside the resin sealing mold, and then the frame on which the power chip and the like were mounted was attached to the frame die pad (island ) Is disposed at a predetermined position in the mold for resin sealing so that the back surface of the resin sheet is in contact with the upper surface of the resin sheet. Then, in a state where the die pad of the frame is pressed against the upper surface of the resin sheet at the tip of the pressing pin at the time of mold clamping, a pressurized sealing resin is injected into the resin sealing mold. Thereby, generation | occurrence | production of the burr | flash in the site | part which metal foil exposes from the back surface of mold resin is prevented.

また、下記特許文献２に開示される半導体装置の製造方法では、上型と下型とによる型締めを伴うモールドの際、半導体ペレットがボンディングされるタブの両脇に設けられた両押さえ部を上型で押さえ付けることで、タブ下面を下型に密着させてモールドを行う。これにより、タブ下面へのレジン（成形材料としての樹脂）の回り込みを防止し、タブ周辺の樹脂バリの発生を防止する。   Further, in the method of manufacturing a semiconductor device disclosed in Patent Document 2 below, when pressing is performed with an upper mold and a lower mold, both pressing portions provided on both sides of a tab to which a semiconductor pellet is bonded are provided. By pressing with the upper mold, the lower surface of the tab is brought into close contact with the lower mold to perform molding. This prevents the resin (resin as a molding material) from wrapping around the lower surface of the tab and prevents the occurrence of resin burrs around the tab.

また、下記特許文献３に開示される半導体装置の製造方法では、モールド時の型締めの際、ヒートシンク上面を両押さえピンにてそれぞれ押接し、ヒートシンク下面をキャビティ底面に当接させる。これにより、レジンがヒートシンクとキャビティの隙間に漏洩してバリが発生することを防止する。   In the method for manufacturing a semiconductor device disclosed in Patent Document 3 below, when the mold is clamped, the upper surface of the heat sink is pressed with both pressing pins, and the lower surface of the heat sink is brought into contact with the bottom surface of the cavity. This prevents the resin from leaking into the gap between the heat sink and the cavity to generate burrs.

特許第３８５４９５７号公報Japanese Patent No. 3854957 特開平１１−２６０９７５号公報JP-A-11-260975 特開平０７−０７４１９７号公報Japanese Patent Application Laid-Open No. 07-074197

ところで、上記特許文献１のように、露出面でのバリの発生を防止するために、アイランド（ダイパッド）を押さえピンにて直接押圧すると、この押圧力によってはダイパッドが破損してしまうという問題がある。また、上述のようにアイランドを押さえピンにて押圧する場合には、アイランドに実装される素子等に接続されるワイヤ等と押さえピンとが近接するため、ワイヤ等と押さえピンとの干渉を防ぐ必要があり、ワイヤ等の配置が制約されて小型化の阻害要因となってしまう。また、上記特許文献２，３では、アイランドに固定される固定部材（タブ，ヒートシンク）が反り等により変形していると、固定部材と金型の内壁面との間に隙間が発生しバリが発生してしまう場合がある。   By the way, as in Patent Document 1, when an island (die pad) is directly pressed with a pressing pin in order to prevent the occurrence of burrs on the exposed surface, the die pad may be damaged by the pressing force. is there. In addition, when the island is pressed with the pressing pin as described above, the wire connected to the element mounted on the island and the pressing pin are close to each other, so it is necessary to prevent the interference between the wire and the pressing pin. In addition, the arrangement of the wires and the like is restricted, which becomes an obstacle to downsizing. In Patent Documents 2 and 3, when the fixing member (tab, heat sink) fixed to the island is deformed by warpage or the like, a gap is generated between the fixing member and the inner wall surface of the mold, and burrs are generated. May occur.

本発明は、上述した課題を解決するためになされたものであり、その目的とするところは、半導体素子を実装したアイランドに固定される固定部材の露出面を封止部材から確実に露出させ得る半導体装置の製造方法および半導体装置を提供することにある。   The present invention has been made to solve the above-described problems, and an object of the present invention is to reliably expose the exposed surface of the fixing member fixed to the island on which the semiconductor element is mounted from the sealing member. A semiconductor device manufacturing method and a semiconductor device are provided.

上記目的を達成するため、特許請求の範囲に記載の請求項１の半導体装置の製造方法では、リードフレームのアイランドの一側面に半導体素子が実装されるとともに他側面に固定部材が固定され、この固定部材の露出面が露出するように前記半導体素子および前記アイランドが封止部材により封止される半導体装置の製造方法であって、前記アイランドが形成された前記リードフレームを用意する第１工程と、前記アイランドの前記他側面に前記固定部材を固定するとともに前記アイランドの前記一側面に前記半導体素子を実装する第２工程と、前記固定部材および前記半導体素子が取り付けられた前記アイランドを金型内に配置して、型締時にこの金型に設けられる押圧部により前記露出面が前記金型の内壁面に面接触するように前記固定部材を前記内壁面に向けて押圧する第３工程と、前記金型内に前記封止部材を構成する封止用材料を注入して前記固定部材の前記露出面が露出するように前記半導体素子および前記アイランドを封止する第４工程と、を備え、前記押圧部は、前記金型に複数個所設けられ、前記リードフレームには、複数のアイランドが形成されており、前記第２工程では、前記複数のアイランドのそれぞれの前記他側面に共通の前記固定部材を固定し、前記第２工程では、前記半導体素子が前記アイランドの前記一側面に実装された後に、当該半導体素子と前記封止部材により封止される他の素子とを電気的に接続し、前記押圧部は、前記金型に取り付けられる押圧用ピンであって、前記第３工程では、前記押圧用ピンにより、前記固定部材のうち前記アイランドが固定される固定部と異なる非固定部が前記内壁面に向けて押圧され、前記リードフレームには、前記アイランドと異なる部位であって、前記押圧用ピンと前記非固定部との双方に押圧状態で接触する接触部が設けられることを特徴とする。 In order to achieve the above object, in the method of manufacturing a semiconductor device according to claim 1, the semiconductor element is mounted on one side surface of the island of the lead frame and the fixing member is fixed on the other side surface. A method of manufacturing a semiconductor device in which the semiconductor element and the island are sealed by a sealing member so that an exposed surface of a fixing member is exposed, and the first step of preparing the lead frame in which the island is formed; A second step of fixing the fixing member to the other side surface of the island and mounting the semiconductor element on the one side surface of the island; and the island to which the fixing member and the semiconductor element are attached in the mold The fixed portion is arranged so that the exposed surface comes into surface contact with the inner wall surface of the mold by a pressing portion provided on the mold when the mold is clamped. A third step of pressing a material toward the inner wall surface, and the semiconductor element such that a sealing material constituting the sealing member is injected into the mold so that the exposed surface of the fixing member is exposed. And a fourth step of sealing the island , wherein the pressing portion is provided at a plurality of locations on the mold, and a plurality of islands are formed on the lead frame. In the second step, The fixing member common to the other side surface of each of the plurality of islands is fixed, and in the second step, the semiconductor element and the sealing member are mounted after the semiconductor element is mounted on the one side surface of the island. And the pressing part is a pressing pin attached to the mold, and in the third step, the pressing pin is used to fix the fixing member. Out of the eyes A non-fixed portion different from the fixed portion to which the wire is fixed is pressed toward the inner wall surface, and the lead frame is a portion different from the island and is pressed against both the pressing pin and the non-fixed portion. contact portion for contacting a state is characterized by Rukoto provided.

請求項２の発明は、請求項１に記載の半導体装置の製造方法において、前記第２工程では、前記半導体素子が前記アイランドの前記一側面に実装された後に、当該半導体素子と前記封止部材により封止される他の素子とをワイヤボンディングにより電気的に接続することを特徴とする。 According to a second aspect of the invention, in the method of manufacturing a semiconductor device according to claim 1, wherein in the second step, after the semiconductor element is mounted on said one side of the island, the sealing member and the semiconductor element It is characterized in that it is electrically connected to another element sealed by the wire bonding.

請求項３の発明は、請求項１または２に記載の半導体装置の製造方法において、前記固定部材は、絶縁部材に放熱部材の一側面を貼り付けて構成され、前記放熱部材の他側面が前記露出面として前記封止部材から露出することを特徴とする。 According to a third aspect of the present invention, in the method for manufacturing a semiconductor device according to the first or second aspect, the fixing member is configured by attaching one side surface of a heat radiation member to an insulating member, and the other side surface of the heat radiation member is the The exposed surface is exposed from the sealing member.

請求項４の発明は、請求項３に記載の半導体装置の製造方法において、前記絶縁部材は、接着性を有する絶縁シートであることを特徴とする。 According to a fourth aspect of the present invention, in the method for manufacturing a semiconductor device according to the third aspect , the insulating member is an insulating sheet having adhesiveness.

請求項１の発明では、第１工程により、アイランドが形成されたリードフレームを用意し、第２工程により、アイランドの他側面に固定部材を固定するとともにアイランドの一側面に半導体素子を実装し、第３工程により、固定部材および半導体素子が取り付けられたアイランドを金型内に配置して、型締時にこの金型に設けられる押圧部により露出面が金型の内壁面に面接触するように固定部材を内壁面に向けて押圧し、第４工程により、金型内に封止部材を構成する封止用材料を注入して固定部材の露出面が露出するように半導体素子およびアイランドを封止する。   In the first aspect of the invention, a lead frame in which an island is formed is prepared in the first step, and a fixing member is fixed to the other side surface of the island and a semiconductor element is mounted on one side surface of the island in the second step. In the third step, the island to which the fixing member and the semiconductor element are attached is arranged in the mold, and the exposed surface is brought into surface contact with the inner wall surface of the mold by the pressing portion provided in the mold at the time of mold clamping. In the fourth step, the fixing member is pressed toward the inner wall surface, and a sealing material constituting the sealing member is injected into the mold to seal the semiconductor element and the island so that the exposed surface of the fixing member is exposed. Stop.

これにより、型締時に押圧部により露出面が金型の内壁面に面接触するように固定部材が内壁面に向けて押圧された状態で、金型内に封止用材料が注入されるため、露出面と内壁面との間における隙間の発生が抑制されて、露出面でのバリの発生を防止することができる。また、アイランドには直接押圧力が作用しないので、固定部材の押圧時でのアイランドの破損を防止して、アイランドに実装される素子等に接続されるワイヤ等と押圧部とを干渉しにくくすることができる。特に、アイランドの他側面に固定部材が固定された状態で封止されるので、アイランドが固定部材に固定されることなく封止される場合と比較して、アイランドに実装される素子等の電気的接続作業を容易に実施することができる。
したがって、半導体素子を実装したアイランドに固定される固定部材の露出面でのバリの発生を防止して、当該露出面を封止部材から確実に露出させることができる。
なお、第２工程において、他側面への固定部材の固定と一側面への半導体素子の実装とは、どちらを先に実施してもよいが、他側面への固定部材の固定を先に実施する方が、半導体素子の実装時にアイランドが固定部材に固定されているため、半導体素子に関する電気的接続作業が容易になる。 As a result, the sealing material is injected into the mold while the fixing member is pressed toward the inner wall surface so that the exposed surface comes into surface contact with the inner wall surface of the mold by the pressing portion during mold clamping. The occurrence of a gap between the exposed surface and the inner wall surface is suppressed, and the occurrence of burrs on the exposed surface can be prevented. Also, since the pressing force does not act directly on the island, the island is prevented from being damaged when the fixing member is pressed, and the pressing portion does not easily interfere with the wire or the like connected to the element mounted on the island. be able to. In particular, since the sealing is performed in a state where the fixing member is fixed to the other side surface of the island, compared to the case where the island is sealed without being fixed to the fixing member, the electrical characteristics of the elements mounted on the island are reduced. Connection work can be easily performed.
Therefore, the occurrence of burrs on the exposed surface of the fixing member fixed to the island on which the semiconductor element is mounted can be prevented, and the exposed surface can be reliably exposed from the sealing member.
In the second step, either the fixing of the fixing member to the other side or the mounting of the semiconductor element to one side may be performed first, but the fixing member is fixed to the other side first. However, since the island is fixed to the fixing member when the semiconductor element is mounted, the electrical connection work for the semiconductor element is facilitated.

特に、押圧部は、金型に複数個所設けられるため、型締時に各押圧部により露出面が金型の内壁面に面接触するように固定部材の複数の部位が内壁面に向けてそれぞれ押圧されるので、固定部材に反り等が生じる場合であっても、露出面と内壁面との間における隙間の発生を確実に抑制することができる。 In particular , since a plurality of pressing parts are provided on the mold, a plurality of portions of the fixing member are pressed toward the inner wall surface so that the exposed surface comes into surface contact with the inner wall surface of the mold by each pressing part during mold clamping. Therefore, even when the fixing member is warped, the generation of a gap between the exposed surface and the inner wall surface can be reliably suppressed.

特に、第２工程により、複数のアイランドのそれぞれの他側面に共通の固定部材が固定される。このように、複数のアイランドが１つの固定部材に固定される場合であっても、この固定部材を内壁面に向けて押圧することで、その露出面と金型の内壁面との間における隙間の発生を抑制することができる。 In particular , the second fixing step fixes a common fixing member to the other side surface of each of the plurality of islands. Thus, even when a plurality of islands are fixed to one fixing member, the gap between the exposed surface and the inner wall surface of the mold can be obtained by pressing the fixing member toward the inner wall surface. Can be suppressed.

特に、第２工程にて、半導体素子がアイランドの一側面に実装された後に、当該半導体素子と封止部材により封止される他の素子とが電気的に接続される。これにより、半導体素子がアイランドに実装された状態で、半導体素子と他の素子とが電気的に接続されるので、アイランドに実装される前の半導体素子と他の素子とを接続する場合と比較して、接続作業を容易に実施することができる。
また、第３工程にて、金型に取り付けられる押圧用ピンにより、固定部材のうちアイランドが固定される固定部と異なる非固定部が内壁面に向けて押圧される。このようにしても、アイランドに直接押圧力を作用させることなく、固定部材の露出面と金型の内壁面との間における隙間の発生を抑制することができる。特に、押圧用ピンにより非固定部が押圧されるため、押圧用ピンとアイランドとが離間するので、アイランドに実装される素子等に接続されるワイヤ等と押圧用ピンとを干渉しにくくすることができる。
さらに、リードフレームには、アイランドと異なる部位であって、押圧用ピンと非固定部との双方に押圧状態で接触する接触部が設けられるため、アイランドに直接押圧力を作用させることなく、固定部材を内壁面に向けて押圧することができる。 In particular , after the semiconductor element is mounted on one side surface of the island in the second step, the semiconductor element and the other element sealed by the sealing member are electrically connected. As a result, the semiconductor element and other elements are electrically connected in a state where the semiconductor element is mounted on the island, so compared with the case where the semiconductor element and other element before being mounted on the island are connected. Thus, the connection work can be easily performed.
Further, in the third step, the non-fixed portion different from the fixed portion to which the island is fixed is pressed toward the inner wall surface by the pressing pin attached to the mold. Even if it does in this way, generation | occurrence | production of the clearance gap between the exposed surface of a fixing member and the inner wall face of a metal mold | die can be suppressed, without making direct pressure act on an island. In particular, since the non-fixed portion is pressed by the pressing pin, the pressing pin and the island are separated from each other, so that it is possible to make it difficult for the pressing pin to interfere with a wire or the like connected to an element mounted on the island. .
Furthermore, since the lead frame is provided with a contact portion that is a part different from the island and contacts both the pressing pin and the non-fixed portion in a pressed state, the fixing member does not directly act on the island. Can be pressed toward the inner wall surface.

請求項２の発明では、第２工程にて、半導体素子がアイランドの一側面に実装された後に、当該半導体素子と封止部材により封止される他の素子とがワイヤボンディングにより電気的に接続される。これにより、半導体素子がアイランドに実装された状態で、半導体素子と他の素子とがワイヤボンディングにより電気的に接続されるので、アイランドに実装される前の半導体素子と他の素子とを接続する場合と比較して、ワイヤボンディング作業を容易に実施することができる。 In the invention of claim 2 , after the semiconductor element is mounted on one side surface of the island in the second step, the semiconductor element and another element sealed by the sealing member are electrically connected by wire bonding. Is done. Thereby, in a state where the semiconductor element is mounted on the island, the semiconductor element and the other element are electrically connected by wire bonding, so that the semiconductor element before being mounted on the island and the other element are connected. Compared to the case, the wire bonding operation can be easily performed.

請求項３の発明では、固定部材は、絶縁部材に放熱部材の一側面を貼り付けて構成され、放熱部材の他側面が露出面として封止部材から露出する。このように固定部材が絶縁性と放熱性を兼備する構成であっても、露出面でのバリの発生が防止されるので、固定部材の放熱性および絶縁性を確保することができる。 In the invention of claim 3 , the fixing member is configured by attaching one side surface of the heat radiating member to the insulating member, and the other side surface of the heat radiating member is exposed from the sealing member as an exposed surface. Thus, even if the fixing member has a configuration having both insulating properties and heat dissipation properties, the occurrence of burrs on the exposed surface can be prevented, so that the heat dissipation properties and insulation properties of the fixing member can be ensured.

請求項４の発明では、絶縁部材は、接着性を有する絶縁シートであるため、この絶縁シートを有する固定部材とアイランドの他側面とを容易に接着固定することができる。 In the invention of claim 4 , since the insulating member is an insulating sheet having adhesiveness, the fixing member having the insulating sheet and the other side surface of the island can be easily bonded and fixed.

第１実施形態に係る半導体装置の構成を概略的に示す断面図である。1 is a cross-sectional view schematically showing a configuration of a semiconductor device according to a first embodiment. 図１の両アイランドと固定部材との接着固定状態を示す説明図である。It is explanatory drawing which shows the adhesion fixation state of both islands of FIG. 1, and a fixing member. 第１実施形態における半導体装置の製造方法の工程の一部を示す説明図である。It is explanatory drawing which shows a part of process of the manufacturing method of the semiconductor device in 1st Embodiment. 第１実施形態における半導体装置の製造方法の工程の一部を示す説明図である。It is explanatory drawing which shows a part of process of the manufacturing method of the semiconductor device in 1st Embodiment. 図３（Ｂ）の両アイランドと固定部材との接着固定状態を示す説明図である。It is explanatory drawing which shows the adhesion fixation state of both islands of FIG. 3 (B), and a fixing member. 第１実施形態の第１変形例に係る半導体装置の要部を示す説明図である。It is explanatory drawing which shows the principal part of the semiconductor device which concerns on the 1st modification of 1st Embodiment. 第１実施形態の第２変形例に係る半導体装置の要部を示す説明図である。It is explanatory drawing which shows the principal part of the semiconductor device which concerns on the 2nd modification of 1st Embodiment. 第１実施形態の第３変形例に係る半導体装置の要部を示す説明図である。It is explanatory drawing which shows the principal part of the semiconductor device which concerns on the 3rd modification of 1st Embodiment. 図９（Ａ）は、第１実施形態の第４変形例に係る半導体装置の要部を示す断面図であり、図９（Ｂ）は、図９（Ａ）のアイランドと固定部材との接着固定状態を示す説明図である。FIG. 9A is a cross-sectional view showing the main part of the semiconductor device according to the fourth modification of the first embodiment, and FIG. 9B shows the bonding between the island of FIG. 9A and the fixing member. It is explanatory drawing which shows a fixed state. 図１０（Ａ）は、第１実施形態の第５変形例に係る半導体装置の要部を示す断面図であり、図１０（Ｂ）は、図１０（Ａ）のアイランドと固定部材との接着固定状態を示す説明図である。FIG. 10A is a cross-sectional view showing the main part of the semiconductor device according to the fifth modification of the first embodiment, and FIG. 10B shows the bonding between the island and the fixing member in FIG. It is explanatory drawing which shows a fixed state. 第１実施形態の第６変形例に係る半導体装置の要部を示す説明図である。It is explanatory drawing which shows the principal part of the semiconductor device which concerns on the 6th modification of 1st Embodiment. 図１１のリードフレームの製造方法の工程を示す説明図である。FIG. 12 is an explanatory diagram illustrating a process of the lead frame manufacturing method of FIG. 11. 第１実施形態の第７変形例に係る半導体装置の要部を示す説明図である。It is explanatory drawing which shows the principal part of the semiconductor device which concerns on the 7th modification of 1st Embodiment. 第１実施形態の第８変形例に係る半導体装置の要部を示す説明図である。It is explanatory drawing which shows the principal part of the semiconductor device which concerns on the 8th modification of 1st Embodiment. 図１５（Ａ）は、第１実施形態の第９変形例に係る半導体装置の要部を示す説明図であり、図１５（Ｂ）は、図１５（Ａ）に示す１５Ｂ−１５Ｂ線相当の切断面による断面図である。FIG. 15A is an explanatory view showing the main part of the semiconductor device according to the ninth modification of the first embodiment, and FIG. 15B corresponds to the line 15B-15B shown in FIG. It is sectional drawing by a cut surface. 第２実施形態に係る半導体装置の要部を示す一部断面図である。It is a partial cross section figure showing the principal part of the semiconductor device concerning a 2nd embodiment. 第３実施形態に係る半導体装置の要部を示す一部断面図である。It is a partial cross section figure showing the principal part of the semiconductor device concerning a 3rd embodiment.

［第１実施形態］
以下、本発明の半導体装置の製造方法を具現化した第１実施形態について、図面を参照して説明する。図１は、第１実施形態に係る半導体装置１０の構成を概略的に示す断面図である。図２は、図１の両アイランド２１，３１と固定部材５０との接着固定状態を示す説明図である。 [First Embodiment]
Hereinafter, a first embodiment that embodies a semiconductor device manufacturing method of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing the configuration of the semiconductor device 10 according to the first embodiment. FIG. 2 is an explanatory view showing a state where the islands 21 and 31 and the fixing member 50 in FIG. 1 are bonded and fixed.

図１および図２に示すように、半導体装置１０は、２つのパワー素子１１，１２および制御ＩＣ１３と、パワー素子１１が実装されるアイランド２１が形成される第１リードフレーム２０と、パワー素子１２が実装されるアイランド３１が形成される第２リードフレーム３０と、制御ＩＣ１３が実装されるアイランド４１が形成される第３リードフレーム４０と、アイランド２１およびアイランド３１が固定される固定部材５０とを備えており、各リードフレーム２０，３０，４０の外側端部２２，３２，４２と固定部材５０の露出面５０ａとが露出するようにモールド樹脂６０により封止されて構成されている。なお、半導体装置１０は、他の素子やリードフレームが電気的に接続されてモールド樹脂６０により封止されて構成されてもよい。   As shown in FIGS. 1 and 2, the semiconductor device 10 includes two power elements 11 and 12 and a control IC 13, a first lead frame 20 on which an island 21 on which the power element 11 is mounted is formed, and the power element 12. The second lead frame 30 on which the island 31 on which the island is mounted is formed, the third lead frame 40 on which the island 41 on which the control IC 13 is mounted is formed, and the fixing member 50 on which the island 21 and the island 31 are fixed. The outer end portions 22, 32, 42 of the lead frames 20, 30, 40 and the exposed surface 50a of the fixing member 50 are sealed with a mold resin 60 so as to be exposed. In addition, the semiconductor device 10 may be configured by being electrically connected to other elements and lead frames and sealed with a mold resin 60.

両パワー素子１１，１２は、制御ＩＣ１３に細線ワイヤ１６等を介して電気的に接続されるとともに、他のリードフレーム１４，１５にアルミワイヤ１７等を介して電気的に接続されている。なお、上述したワイヤ１６，１７は、Ａｌにより形成されることに限らず、例えば、ＡｕやＣｕなどの導電性材料により形成されてもよい。   Both power elements 11 and 12 are electrically connected to the control IC 13 via a fine wire 16 and the like, and are also electrically connected to other lead frames 14 and 15 via an aluminum wire 17 and the like. The wires 16 and 17 described above are not limited to be formed of Al, and may be formed of a conductive material such as Au or Cu, for example.

第１リードフレーム２０は、モールド樹脂６０の裏面６０ａ近傍にてこの裏面６０ａに平行に位置する矩形状のアイランド２１と、モールド樹脂６０の高さ方向中間部位に位置する外側端部２２とが連結部２３を介して連結するように形成されている。また、第２リードフレーム３０も、第１リードフレーム２０と同様に、モールド樹脂６０の裏面６０ａ近傍にてこの裏面６０ａに平行に位置する矩形状のアイランド３１と、モールド樹脂６０の高さ方向中間部位に位置する外側端部３２とが連結部３３を介して連結するように形成されている。なお、両リードフレーム２０，３０の詳細形状の説明については後述する。   In the first lead frame 20, the rectangular island 21 located in the vicinity of the back surface 60 a of the mold resin 60 and parallel to the back surface 60 a is connected to the outer end portion 22 located at the intermediate portion in the height direction of the mold resin 60. It forms so that it may connect via the part 23. FIG. Similarly to the first lead frame 20, the second lead frame 30 also has a rectangular island 31 located in the vicinity of the back surface 60 a of the mold resin 60 and parallel to the back surface 60 a, and the middle of the mold resin 60 in the height direction. It forms so that the outer side edge part 32 located in a site | part may be connected via the connection part 33. FIG. The detailed shapes of the lead frames 20 and 30 will be described later.

固定部材５０は、絶縁部材として機能する接着性を有する絶縁シート５１に、絶縁シート５１の保持部材として機能するとともに放熱部材として機能する銅箔５２の一側面を貼り付けて構成されている。銅箔５２は、その厚さが例えば０．１ｍｍ程度に設定されており、その他側面が、露出面５０ａとしてモールド樹脂６０の裏面６０ａから露出する。絶縁シート５１は、アイランド２１およびアイランド３１がそれぞれ接着固定されるため、アイランド２１およびアイランド３１よりも広くなるように矩形状に形成されている（図２参照）。   The fixing member 50 is configured by attaching one side surface of a copper foil 52 that functions as a holding member for the insulating sheet 51 and functions as a heat radiating member to an insulating sheet 51 having adhesiveness that functions as an insulating member. The thickness of the copper foil 52 is set to about 0.1 mm, for example, and the other side surface is exposed from the back surface 60a of the mold resin 60 as the exposed surface 50a. Since the island 21 and the island 31 are bonded and fixed respectively, the insulating sheet 51 is formed in a rectangular shape so as to be wider than the island 21 and the island 31 (see FIG. 2).

なお、本第１実施形態では、絶縁シート５１は、Ｂステージ状態のエポキシ樹脂に対してアルミナ、ＢＮ（窒化硼素）あるいはＡｌＮ（窒化アルミ）等の絶縁性のフィラーを含浸して形成されているが、これに限らず、例えば、ポリイミドなどの熱硬化性樹脂に対してアルミナ、ＢＮ（窒化硼素）あるいはＡｌＮ（窒化アルミ）等の絶縁性のフィラーを含浸して形成されてもよい。また、銅箔５２に代えて、アルミ箔や銅板（厚み０．２〜２ｍｍ）など保持機能や放熱機能を有する部材を採用してもよい。また、銅箔５２に代えて、セパレートフィルムとしてＰＥＴなどのフィルム材を採用してもよい。この場合、このフィルム材を、アイランドへの接着固定後やモールド後にはがしてもよい。   In the first embodiment, the insulating sheet 51 is formed by impregnating B-stage epoxy resin with an insulating filler such as alumina, BN (boron nitride), or AlN (aluminum nitride). However, the present invention is not limited thereto, and may be formed by impregnating a thermosetting resin such as polyimide with an insulating filler such as alumina, BN (boron nitride), or AlN (aluminum nitride). Further, instead of the copper foil 52, a member having a holding function and a heat dissipation function such as an aluminum foil or a copper plate (thickness 0.2 to 2 mm) may be employed. Further, instead of the copper foil 52, a film material such as PET may be adopted as a separate film. In this case, the film material may be peeled off after being fixed to the island or after being molded.

次に、本実施形態に係る半導体装置１０の製造方法の工程を、図３〜図５を用いて詳細に説明する。図３（Ａ）〜（Ｃ）および図４（Ｄ），（Ｅ）は、第１実施形態における半導体装置１０の製造方法の工程を示す説明図である。図５は、図３（Ｂ）の両アイランド２１，３１と固定部材５０との接着固定状態を示す説明図である。   Next, steps of the method for manufacturing the semiconductor device 10 according to the present embodiment will be described in detail with reference to FIGS. FIGS. 3A to 3C and FIGS. 4D and 4E are explanatory views showing steps of the method for manufacturing the semiconductor device 10 according to the first embodiment. FIG. 5 is an explanatory view showing a state where the islands 21 and 31 and the fixing member 50 in FIG.

まず、図３（Ａ）に示すように、アイランド２１が形成された第１リードフレーム２０やアイランド３１が形成された第２リードフレーム３０を用意する。なお、図３（Ａ）に示す工程は、特許請求の範囲に記載の「第１工程」の一例に相当し得る。   First, as shown in FIG. 3A, a first lead frame 20 having an island 21 and a second lead frame 30 having an island 31 are prepared. The process shown in FIG. 3A can correspond to an example of a “first process” recited in the claims.

次に、図３（Ｂ）および図５に示すように、絶縁シート５１に銅箔５２を貼り付けた固定部材５０を用意し、この固定部材５０の絶縁シート５１上にアイランド２１の他側面２１ｂおよびアイランド３１の他側面３１ｂを接着固定する。   Next, as shown in FIGS. 3B and 5, a fixing member 50 in which a copper foil 52 is bonded to the insulating sheet 51 is prepared, and the other side surface 21 b of the island 21 is formed on the insulating sheet 51 of the fixing member 50. The other side surface 31b of the island 31 is bonded and fixed.

続いて、図３（Ｃ）に示すように、パワー素子１１，１２を用意し、パワー素子１１をアイランド２１の一側面２１ａにはんだ１８等を介して実装するとともに、パワー素子１２をアイランド３１の一側面３１ａにはんだ１８等を介して実装する。また、用意した制御ＩＣ１３を、用意した第３リードフレーム４０のアイランド４１にはんだ１８等を介して実装する。そして、両パワー素子１１，１２と制御ＩＣ１３とを細線ワイヤ１６等を介して電気的に接続するとともに、両パワー素子１１，１２と別途用意した他のリードフレーム１４，１５とをアルミワイヤ１７等を介して電気的に接続する。なお、図３（Ｂ）、図３（Ｃ）および図５に示す工程は、特許請求の範囲に記載の「第２工程」の一例に相当し得る。なお、パワー素子１１，１２をアイランド２１，３１の一側面２１ａ、３１ａに実装する工程（図３（Ｃ））を、固定部材５０にアイランド２１の他側面２１ｂおよびアイランド３１の他側面３１ｂを接着固定する工程（図３（Ｂ））よりも先に実施してもよいが、他側面２１ｂ，３１ｂへの固定部材５０の固定を先に実施する方（本実施形態の方）が、パワー素子１１，１２の実装時にアイランド２１，３１が固定部材５０に固定されているため、パワー素子１１，１２に関する電気的接続作業が容易になる。   Subsequently, as shown in FIG. 3C, power elements 11 and 12 are prepared, and the power element 11 is mounted on one side surface 21 a of the island 21 via the solder 18 and the power element 12 is mounted on the island 31. It is mounted on one side 31a via solder 18 or the like. The prepared control IC 13 is mounted on the island 41 of the prepared third lead frame 40 via the solder 18 or the like. The power elements 11 and 12 and the control IC 13 are electrically connected via a fine wire 16 or the like, and the power elements 11 and 12 and other lead frames 14 and 15 separately prepared are connected to an aluminum wire 17 or the like. Electrical connection through 3B, FIG. 3C, and FIG. 5 may correspond to an example of a “second step” described in the claims. In the step of mounting the power elements 11 and 12 on the one side surfaces 21a and 31a of the islands 21 and 31 (FIG. 3C), the other side surface 21b of the island 21 and the other side surface 31b of the island 31 are bonded to the fixing member 50. Although it may be performed prior to the fixing step (FIG. 3B), the power element is the one in which the fixing member 50 is first fixed to the other side surfaces 21b and 31b (the present embodiment). Since the islands 21 and 31 are fixed to the fixing member 50 when the 11 and 12 are mounted, the electrical connection work regarding the power elements 11 and 12 is facilitated.

そして、図４（Ｄ）に示すように、固定部材５０および両パワー素子１１，１２が取り付けられたアイランド２１，３１を上型７１および下型７２にて構成される金型７０内の所定の位置に配置する。そして、型締時には、この金型７０に設けられる押圧部により、固定部材５０の露出面５０ａが下型７２の内壁面７２ａに面接触するように、固定部材５０が内壁面７２ａに向けて押圧される。   Then, as shown in FIG. 4D, the islands 21 and 31 to which the fixing member 50 and the power elements 11 and 12 are attached are formed in a predetermined mold 70 in a mold 70 constituted by an upper mold 71 and a lower mold 72. Place in position. At the time of mold clamping, the fixing member 50 is pressed toward the inner wall surface 72 a by the pressing portion provided on the mold 70 so that the exposed surface 50 a of the fixing member 50 is in surface contact with the inner wall surface 72 a of the lower mold 72. Is done.

具体的には、本第１実施形態では、上記押圧部の一つとして、上型７１に取り付けられる２つの円錐台状の押圧用ピン７３が採用されている。図４（Ｄ）に示す工程では、両押圧用ピン７３により、固定部材５０のうちアイランド２１，３１が固定される固定部と異なる非固定部５０ｂであって外側端部２２，３２から離れた部位（図２の領域Ｓ１参照）が内壁面７２ａに向けてそれぞれ押圧される。   Specifically, in the first embodiment, two truncated cone-shaped pressing pins 73 attached to the upper mold 71 are employed as one of the pressing portions. In the step shown in FIG. 4D, the both pressing pins 73 are non-fixed portions 50b different from the fixed portions to which the islands 21 and 31 of the fixed member 50 are fixed, and are separated from the outer end portions 22 and 32. Each part (refer to region S1 in FIG. 2) is pressed toward the inner wall surface 72a.

また、本第１実施形態では、上記押圧部の一つとして、上型７１および下型７２の分割面に形成されて型締時にリードフレーム２０，３０の外側端部２２，３２を上下から挟持する挟持部７４が設けられている。ここで、リードフレーム２０，３０は、外側端部２２，３２が挟持部７４により挟持されるとき、当該リードフレーム２０，３０の弾性力によりアイランド２１，３１に固定される固定部材５０の露出面５０ａが内壁面７２ａに押圧されるように形成されている。これにより、図４（Ｄ）に示す工程では、リードフレーム２０，３０の外側端部２２，３２が挟持部７４により挟持されることで、アイランド２１，３１に固定される固定部材５０の露出面５０ａが内壁面７２ａに押圧されることとなる。なお、図４（Ｄ）に示す工程は、特許請求の範囲に記載の「第３工程」の一例に相当し、外側端部２２，３２は、特許請求の範囲に記載の「被挟持部」の一例に相当し得る。   In the first embodiment, as one of the pressing portions, the outer end portions 22 and 32 of the lead frames 20 and 30 are clamped from above and below when the mold is clamped. A clamping part 74 is provided. Here, when the outer end portions 22 and 32 are sandwiched by the sandwiching portions 74, the lead frames 20 and 30 are exposed to the exposed surfaces of the fixing members 50 that are fixed to the islands 21 and 31 by the elastic force of the lead frames 20 and 30. 50a is formed to be pressed against the inner wall surface 72a. 4D, the outer end portions 22 and 32 of the lead frames 20 and 30 are sandwiched by the sandwiching portions 74, so that the exposed surface of the fixing member 50 that is fixed to the islands 21 and 31 is obtained. 50a is pressed against the inner wall surface 72a. Note that the process shown in FIG. 4D corresponds to an example of a “third process” described in the claims, and the outer end portions 22 and 32 are “clamped parts” described in the claims. It may correspond to an example.

そして、固定部材５０の露出面５０ａが内壁面７２ａに押圧された状態で、図４（Ｅ）に示すように、金型７０内にモールド樹脂６０を構成する封止用材料を注入して固定部材５０の露出面５０ａが露出するようにパワー素子１１，１２およびアイランド２１，３１を封止することで、図１に示す半導体装置１０が完成する。なお、図４（Ｅ）に示す工程は、特許請求の範囲に記載の「第４工程」の一例に相当し得る。   Then, with the exposed surface 50a of the fixing member 50 pressed against the inner wall surface 72a, as shown in FIG. 4E, the sealing material constituting the mold resin 60 is injected into the mold 70 and fixed. By sealing the power elements 11 and 12 and the islands 21 and 31 so that the exposed surface 50a of the member 50 is exposed, the semiconductor device 10 shown in FIG. 1 is completed. The process shown in FIG. 4E can correspond to an example of a “fourth process” recited in the claims.

以上説明したように、本第１実施形態に係る半導体装置１０では、図３（Ａ）に示す工程により、アイランド２１，３１が形成されたリードフレーム２０，３０を用意し、図３（Ｂ）および図３（Ｃ）に示す工程により、アイランド２１，３１の他側面２１ｂ，３１ｂに固定部材５０を固定するとともにアイランド２１，３１の一側面２１ａ，３１ａにパワー素子１１，１２を実装し、図４（Ｄ）に示す工程により、固定部材５０およびパワー素子１１，１２が取り付けられたアイランド２１，３１を金型７０内に配置して、型締時にこの金型７０に設けられる押圧部（７３，７４）により露出面５０ａが金型７０の内壁面７２ａに面接触するように固定部材５０を内壁面７２ａに向けて押圧し、図４（Ｅ）に示す工程により、金型７０内にモールド樹脂６０を構成する封止用材料を注入して固定部材５０の露出面５０ａが露出するようにパワー素子１１，１２およびアイランド２１，３１等を封止する。   As described above, in the semiconductor device 10 according to the first embodiment, the lead frames 20 and 30 on which the islands 21 and 31 are formed are prepared by the process shown in FIG. 3C, the fixing member 50 is fixed to the other side surfaces 21b and 31b of the islands 21 and 31, and the power elements 11 and 12 are mounted on the one side surfaces 21a and 31a of the islands 21 and 31, respectively. 4 (D), the islands 21 and 31 to which the fixing member 50 and the power elements 11 and 12 are attached are arranged in the mold 70, and a pressing portion (73 provided on the mold 70 at the time of mold clamping is provided. 74), the fixing member 50 is pressed toward the inner wall surface 72a so that the exposed surface 50a comes into surface contact with the inner wall surface 72a of the mold 70, and the process shown in FIG. Rudo exposed surface 50a of injecting sealing material fixing member 50 constituting the resin 60 seals the power elements 11, 12 and islands 21 and 31 and the like so as to expose.

これにより、型締時に押圧部（７３，７４）により露出面５０ａが金型７０の内壁面７２ａに面接触するように固定部材５０が内壁面７２ａに向けて押圧された状態で、金型７０内に封止用材料が注入されるため、露出面５０ａと内壁面７２ａとの間における隙間の発生が抑制されて、露出面５０ａでのバリの発生を防止することができる。また、アイランド２１，３１には直接押圧力が作用しないので、固定部材５０の押圧時でのアイランド２１，３１の破損を防止して、アイランド２１，３１に実装される素子等に接続されるワイヤ１６，１７等と押圧部（７３）とを干渉しにくくすることができる。特に、アイランド２１，３１の他側面２１ｂ，３１ｂに固定部材５０が固定された状態で封止されるので、アイランド２１，３１が固定部材５０に固定されることなく封止される場合と比較して、アイランド２１，３１に実装されるパワー素子１１，１２等の電気的接続作業を容易に実施することができる。
したがって、パワー素子１１，１２等の半導体素子を実装したアイランド２１，３１に固定される固定部材５０の露出面５０ａでのバリの発生を防止して、当該露出面５０ａをモールド樹脂６０から確実に露出させることができる。 Thus, the mold 70 is pressed in a state where the fixing member 50 is pressed toward the inner wall surface 72a so that the exposed surface 50a is in surface contact with the inner wall surface 72a of the mold 70 by the pressing portions (73, 74) during mold clamping. Since the sealing material is injected into the inside, generation of a gap between the exposed surface 50a and the inner wall surface 72a is suppressed, and generation of burrs on the exposed surface 50a can be prevented. Further, since the direct pressing force does not act on the islands 21 and 31, the islands 21 and 31 are prevented from being damaged when the fixing member 50 is pressed, and the wires connected to the elements mounted on the islands 21 and 31. 16, 17, etc. and the pressing portion (73) can be made difficult to interfere with each other. Particularly, since the fixing member 50 is sealed to the other side surfaces 21b and 31b of the islands 21 and 31, the islands 21 and 31 are sealed without being fixed to the fixing member 50. Thus, the electrical connection work of the power elements 11 and 12 mounted on the islands 21 and 31 can be easily performed.
Therefore, the occurrence of burrs on the exposed surface 50a of the fixing member 50 fixed to the islands 21 and 31 on which the semiconductor elements such as the power elements 11 and 12 are mounted is prevented, and the exposed surface 50a is surely secured from the mold resin 60. Can be exposed.

また、本第１実施形態に係る半導体装置１０では、押圧用ピン７３や挟持部７４などの押圧部が、金型７０に複数個所設けられることとなるため、型締時に各押圧部により露出面５０ａが金型７０の内壁面７２ａに面接触するように固定部材５０の複数の部位が内壁面７２ａに向けてそれぞれ押圧されるので、固定部材５０に反り等が生じる場合であっても、露出面５０ａと内壁面７２ａとの間における隙間の発生を確実に抑制することができる。   Further, in the semiconductor device 10 according to the first embodiment, a plurality of pressing portions such as the pressing pins 73 and the sandwiching portions 74 are provided in the mold 70, so that the exposed surface is exposed by each pressing portion during mold clamping. Since the plurality of portions of the fixing member 50 are pressed toward the inner wall surface 72a so that the surface 50a comes into surface contact with the inner wall surface 72a of the mold 70, even if the fixing member 50 is warped or the like, it is exposed. Generation | occurrence | production of the clearance gap between the surface 50a and the inner wall surface 72a can be suppressed reliably.

さらに、本第１実施形態に係る半導体装置１０では、図３（Ｂ）に示す工程により、２つのアイランド２１，３１のそれぞれの他側面２１ｂ，３１ｂに共通の固定部材５０が固定される。このように、２つのアイランド２１，３１が１つの固定部材５０に固定される場合であっても、この固定部材５０を内壁面７２ａに向けて押圧することで、その露出面５０ａと金型７０の内壁面７２ａとの間における隙間の発生を抑制することができる。また、複数のアイランドが１つの固定部材５０に固定される場合であっても上記効果を奏する。   Furthermore, in the semiconductor device 10 according to the first embodiment, the common fixing member 50 is fixed to the other side surfaces 21b and 31b of the two islands 21 and 31, respectively, by the process shown in FIG. As described above, even when the two islands 21 and 31 are fixed to the one fixing member 50, the exposed surface 50a and the mold 70 are pressed by pressing the fixing member 50 toward the inner wall surface 72a. The generation | occurrence | production of the clearance gap between the inner wall surfaces 72a can be suppressed. Further, even when a plurality of islands are fixed to one fixing member 50, the above-described effect is obtained.

さらにまた、本第１実施形態に係る半導体装置１０では、図３（Ｃ）に示す工程にて、パワー素子１１，１２がアイランド２１，３１の一側面２１ａ，３１ａに実装された後に、当該パワー素子１１，１２と制御ＩＣ１３とが電気的に接続される。これにより、パワー素子１１，１２がアイランド２１，３１に実装された状態で、パワー素子１１，１２と制御ＩＣ１３とがワイヤ１６，１７等により電気的に接続されるので、アイランド２１，３１に実装される前の半導体素子と他の素子とを接続する場合と比較して、接続作業を容易に実施することができる。   Furthermore, in the semiconductor device 10 according to the first embodiment, after the power elements 11 and 12 are mounted on the one side surfaces 21a and 31a of the islands 21 and 31, in the step shown in FIG. The elements 11 and 12 and the control IC 13 are electrically connected. As a result, the power elements 11 and 12 and the control IC 13 are electrically connected to each other by the wires 16 and 17 in a state where the power elements 11 and 12 are mounted on the islands 21 and 31. Compared with the case where the semiconductor element before being connected to another element is connected, the connection work can be easily performed.

また、本第１実施形態に係る半導体装置１０では、固定部材５０は、絶縁シート５１に銅箔５２の一側面を貼り付けて構成され、銅箔５２の他側面が露出面５０ａとしてモールド樹脂６０から露出する。このように固定部材５０が絶縁性と放熱性を兼備する構成であっても、露出面５０ａでのバリの発生が防止されるので、固定部材５０の放熱性および絶縁性を確保することができる。   Further, in the semiconductor device 10 according to the first embodiment, the fixing member 50 is configured by attaching one side surface of the copper foil 52 to the insulating sheet 51, and the other side surface of the copper foil 52 is the exposed surface 50 a as the mold resin 60. Exposed from. Thus, even if the fixing member 50 is configured to have both insulating properties and heat dissipation properties, the occurrence of burrs on the exposed surface 50a is prevented, so that the heat dissipation properties and insulation properties of the fixing member 50 can be ensured. .

特に、絶縁部材として接着性を有する絶縁シート５１を採用するため、この絶縁シート５１を有する固定部材５０とアイランド２１，３１の他側面２１ｂ，３１ｂとを容易に接着固定することができる。   In particular, since the insulating sheet 51 having adhesiveness is employed as the insulating member, the fixing member 50 having the insulating sheet 51 and the other side surfaces 21b and 31b of the islands 21 and 31 can be easily bonded and fixed.

さらに、本第１実施形態に係る半導体装置１０では、図４（Ｄ）に示す工程にて、金型７０の上型７１に取り付けられる押圧用ピン７３により、固定部材５０の非固定部５０ｂの一部が内壁面７２ａに向けて押圧される。このようにしても、アイランド２１，３１に直接押圧力を作用させることなく、固定部材５０の露出面５０ａと金型７０の内壁面７２ａとの間における隙間の発生を抑制することができる。特に、押圧用ピン７３により非固定部５０ｂが押圧されるため、押圧用ピン７３とアイランド２１，３１とが離間するので、アイランド２１，３１に実装される素子等に接続されるワイヤ１６，１７等と押圧用ピン７３とを干渉しにくくすることができる。   Furthermore, in the semiconductor device 10 according to the first embodiment, the non-fixed portion 50b of the fixed member 50 is fixed by the pressing pin 73 attached to the upper mold 71 of the mold 70 in the step shown in FIG. A part is pressed toward the inner wall surface 72a. Even if it does in this way, generation | occurrence | production of the clearance gap between the exposed surface 50a of the fixing member 50 and the inner wall surface 72a of the metal mold | die 70 can be suppressed, without making direct pressure force act on the islands 21 and 31. In particular, since the non-fixed portion 50 b is pressed by the pressing pin 73, the pressing pin 73 and the islands 21 and 31 are separated from each other, so that the wires 16 and 17 connected to the elements and the like mounted on the islands 21 and 31. And the pressing pin 73 can be made difficult to interfere with each other.

さらにまた、本第１実施形態に係る半導体装置１０では、押圧部として、金型７０の分割面に形成されて型締時にリードフレーム２０，３０の外側端部２２，３２を挟持する挟持部７４が形成され、リードフレーム２０，３０は、外側端部２２，３２が挟持部７４により挟持されるとき、当該リードフレーム２０，３０の弾性力によりアイランド２１，３１に固定される固定部材５０の露出面５０ａが内壁面７２ａに押圧されるように形成される。このようにしても、アイランド２１，３１に直接押圧力を作用させることなく、固定部材５０の露出面５０ａと金型７０の内壁面７２ａとの間における隙間の発生を抑制することができる。   Furthermore, in the semiconductor device 10 according to the first embodiment, as the pressing portion, a clamping portion 74 that is formed on the divided surface of the mold 70 and clamps the outer end portions 22 and 32 of the lead frames 20 and 30 during mold clamping. When the outer end portions 22 and 32 are sandwiched by the sandwiching portions 74, the lead frames 20 and 30 are exposed to the fixing members 50 that are secured to the islands 21 and 31 by the elastic force of the lead frames 20 and 30. The surface 50a is formed to be pressed against the inner wall surface 72a. Even if it does in this way, generation | occurrence | production of the clearance gap between the exposed surface 50a of the fixing member 50 and the inner wall surface 72a of the metal mold | die 70 can be suppressed, without making direct pressure force act on the islands 21 and 31.

特に、押圧部として、上記挟持部７４と押圧用ピン７３との双方を採用することで、両部材の相乗効果により、固定部材５０は、リードフレーム２０，３０の弾性力と押圧用ピン７３による押圧力とによりその露出面５０ａが内壁面７２ａに押圧されるので、露出面５０ａと内壁面７２ａとの間における隙間の発生を確実に抑制することができる。   In particular, by adopting both the clamping portion 74 and the pressing pin 73 as the pressing portion, the fixing member 50 is caused by the elastic force of the lead frames 20 and 30 and the pressing pin 73 due to the synergistic effect of both members. Since the exposed surface 50a is pressed against the inner wall surface 72a by the pressing force, the generation of a gap between the exposed surface 50a and the inner wall surface 72a can be reliably suppressed.

また、本第１実施形態に係る半導体装置１０では、押圧用ピン７３により、非固定部５０ｂのうち外側端部２２，３２から離れた部位（図２の斜線領域Ｓ１参照）が内壁面７２ａに向けて押圧される。これにより、リードフレーム２０，３０の弾性力と押圧用ピン７３による押圧力とが互いに離れた位置にて固定部材５０に作用するので、これら弾性力および押圧力が互いに近接する位置にて固定部材５０に作用する場合と比較して、固定部材５０を内壁面７２ａに押し付ける力が位置によってばらつくことが抑制されるので、露出面５０ａと内壁面７２ａとの間における隙間の発生を確実に抑制することができる。   Further, in the semiconductor device 10 according to the first embodiment, a portion of the non-fixed portion 50b away from the outer end portions 22 and 32 (see the hatched region S1 in FIG. 2) is formed on the inner wall surface 72a by the pressing pin 73. It is pressed toward. As a result, the elastic force of the lead frames 20 and 30 and the pressing force by the pressing pin 73 act on the fixing member 50 at positions separated from each other. Compared with the case of acting on 50, since the force pressing the fixing member 50 against the inner wall surface 72 a is suppressed from being varied depending on the position, generation of a gap between the exposed surface 50 a and the inner wall surface 72 a is surely suppressed. be able to.

図６は、第１実施形態の第１変形例に係る半導体装置１０の要部を示す説明図である。図７は、第１実施形態の第２変形例に係る半導体装置１０の要部を示す説明図である。図８は、第１実施形態の第３変形例に係る半導体装置１０の要部を示す説明図である。図９（Ａ）は、第１実施形態の第４変形例に係る半導体装置１０の要部を示す断面図であり、図９（Ｂ）は、図９（Ａ）のアイランド２１と固定部材５０との接着固定状態を示す説明図である。図１０（Ａ）は、第１実施形態の第５変形例に係る半導体装置１０の要部を示す断面図であり、図１０（Ｂ）は、図１０（Ａ）のアイランド２４ａ，２４ｂと固定部材５０との接着固定状態を示す説明図である。図１１は、第１実施形態の第６変形例に係る半導体装置１０の要部を示す説明図である。図１２は、図１１のリードフレーム２０ｃの製造方法の工程を示す説明図である。図１３は、第１実施形態の第７変形例に係る半導体装置１０の要部を示す説明図である。図１４は、第１実施形態の第８変形例に係る半導体装置１０の要部を示す説明図である。図１５（Ａ）は、第１実施形態の第９変形例に係る半導体装置１０の要部を示す説明図であり、図１５（Ｂ）は、図１５（Ａ）に示す１５Ｂ−１５Ｂ線相当の切断面による断面図である。   FIG. 6 is an explanatory diagram illustrating a main part of the semiconductor device 10 according to the first modification of the first embodiment. FIG. 7 is an explanatory diagram illustrating a main part of the semiconductor device 10 according to the second modification of the first embodiment. FIG. 8 is an explanatory diagram illustrating a main part of the semiconductor device 10 according to the third modification of the first embodiment. FIG. 9A is a cross-sectional view showing the main part of the semiconductor device 10 according to the fourth modification of the first embodiment, and FIG. 9B shows the island 21 and the fixing member 50 in FIG. 9A. It is explanatory drawing which shows the adhesion fixation state. FIG. 10A is a cross-sectional view showing a main part of a semiconductor device 10 according to a fifth modification of the first embodiment, and FIG. 10B is fixed to the islands 24a and 24b of FIG. It is explanatory drawing which shows the adhesion fixed state with the member 50. FIG. FIG. 11 is an explanatory diagram illustrating a main part of the semiconductor device 10 according to a sixth modification of the first embodiment. FIG. 12 is an explanatory diagram showing a process of the manufacturing method of the lead frame 20c of FIG. FIG. 13 is an explanatory diagram illustrating a main part of the semiconductor device 10 according to a seventh modification of the first embodiment. FIG. 14 is an explanatory diagram illustrating a main part of the semiconductor device 10 according to an eighth modification of the first embodiment. FIG. 15A is an explanatory view showing the main part of the semiconductor device 10 according to the ninth modification of the first embodiment, and FIG. 15B corresponds to the line 15B-15B shown in FIG. It is sectional drawing by a cut surface.

第１実施形態の第１変形例として、図６に示すように、押圧用ピン７３にて固定部材５０の非固定部５０ｂを押圧する位置は、アイランド２１とアイランド３１との間であってもよい（図６の斜線領域Ｓ２参照）。   As a first modification of the first embodiment, as shown in FIG. 6, the position where the non-fixed portion 50 b of the fixing member 50 is pressed by the pressing pin 73 is between the island 21 and the island 31. Good (see hatched area S2 in FIG. 6).

また、第１実施形態の第２変形例として、図７に示すように、押圧用ピン７３にて固定部材５０の非固定部５０ｂを押圧する位置は、外側端部２２，３２から離れた部位（図７の斜線領域Ｓ１参照）に限らず、外側端部２２，３２に近接する部位であってもよい（図７の斜線領域Ｓ３，Ｓ４参照）。なお、上述したように、領域Ｓ１を押圧する方が、領域Ｓ３または領域Ｓ４を押圧するよりも、固定部材５０を内壁面７２ａに押し付ける力のばらつきが抑制されることとなる。また、領域Ｓ１だけでなく、領域Ｓ３および領域Ｓ４も同時に押圧することで、固定部材５０を内壁面７２ａに押し付ける力のばらつきを抑制して、露出面５０ａと内壁面７２ａとの間における隙間の発生を抑制してもよい。   As a second modification of the first embodiment, as shown in FIG. 7, the position at which the non-fixed portion 50 b of the fixing member 50 is pressed by the pressing pin 73 is a portion away from the outer end portions 22 and 32. It is not limited to the shaded area S1 in FIG. 7 but may be a portion close to the outer end portions 22 and 32 (see the shaded areas S3 and S4 in FIG. 7). As described above, the pressing of the region S1 suppresses variations in the force pressing the fixing member 50 against the inner wall surface 72a rather than pressing the region S3 or the region S4. Further, not only the region S1, but also the region S3 and the region S4 are pressed at the same time, thereby suppressing variation in the force of pressing the fixing member 50 against the inner wall surface 72a, and the gap between the exposed surface 50a and the inner wall surface 72a. Occurrence may be suppressed.

また、第１実施形態の第３変形例として、図８に示すように、固定部材５０の絶縁シート５１上に接着固定されるリードフレーム１９ａ，１９ｂを別途設け、このリードフレーム１９ａ，１９ｂを押圧用ピン７３にて押圧してもよい（図８の斜線領域Ｓ１，Ｓ２参照）。すなわち、リードフレーム１９ａ，１９ｂは、型締時に押圧用ピン７３と固定部材５０との双方に押圧状態で接触することとなる。このとき、外側端部２２，３２から離れた部位、例えば、固定部材５０の外縁近傍を押圧用ピン７３にて押圧することで、露出面５０ａと内壁面７２ａとの間における隙間の発生が確実に抑制されて、固定部材５０を内壁面７２ａに押し付ける力のばらつきが抑制される。また、リードフレーム１９ｂからずれた位置を押圧してもよいし（図８の斜線領域Ｓ５参照）、矩形状の押圧用ピンにてリードフレーム１９ｂを押圧してもよい（図８の斜線領域Ｓ６参照）。また、固定部材５０からずれた位置を押圧してもよい（図８の斜線領域Ｓ７参照）。なお、リードフレーム１９ａ，１９ｂとしては、例えば、１０Ｖ未満の電位しか発生しないような小信号用のリードフレームを利用してもよい。このリードフレームや絶縁シート５１の破損により絶縁性が低下しても、小信号用であれば品質に影響が少ないからである。なお、リードフレーム１９ａ，１９ｂは、特許請求の範囲に記載の「接触部」の一例に相当し得る。   Further, as a third modification of the first embodiment, as shown in FIG. 8, lead frames 19a and 19b that are bonded and fixed on the insulating sheet 51 of the fixing member 50 are separately provided, and the lead frames 19a and 19b are pressed. You may press with the pin 73 for use (refer oblique line area | region S1, S2 of FIG. 8). That is, the lead frames 19a and 19b come into contact with both the pressing pin 73 and the fixing member 50 in a pressed state during mold clamping. At this time, by pressing the portion away from the outer end portions 22 and 32, for example, the vicinity of the outer edge of the fixing member 50 with the pressing pin 73, the generation of a gap between the exposed surface 50a and the inner wall surface 72a is ensured. This suppresses variation in force for pressing the fixing member 50 against the inner wall surface 72a. Further, the position shifted from the lead frame 19b may be pressed (see the hatched area S5 in FIG. 8), or the lead frame 19b may be pressed with a rectangular pressing pin (the hatched area S6 in FIG. 8). reference). Moreover, you may press the position which shifted | deviated from the fixing member 50 (refer oblique line area | region S7 of FIG. 8). As the lead frames 19a and 19b, for example, a small signal lead frame that generates only a potential of less than 10V may be used. This is because even if the insulation is lowered due to the breakage of the lead frame or the insulating sheet 51, the quality is less affected for small signals. The lead frames 19a and 19b may correspond to an example of a “contact portion” described in the claims.

また、第１実施形態の第４変形例として、図９に示すように、第１リードフレーム２０または第２リードフレーム３０に代えてリードフレーム２０ａを採用してもよい。このリードフレーム２０ａは、２つの外側端部２２ａ，２２ｂを有しており、アイランド２１の両端と外側端部２２ａ，２２ｂとが連結部２３ａ，２３ｂによりそれぞれ連結されて形成されている。これにより、成形時に外側端部２２ａ，２２ｂが挟持部７４によりそれぞれ挟持されることで、当該リードフレーム２０ａの弾性力がアイランド２１の両端を基準に作用するので、成形時に１つの外側端部のみが挟持部７４により挟持される場合と比較して、固定部材５０の露出面５０ａを金型７０の内壁面７２ａに確実に押圧することができる。   Further, as a fourth modification of the first embodiment, as shown in FIG. 9, a lead frame 20 a may be employed instead of the first lead frame 20 or the second lead frame 30. The lead frame 20a has two outer end portions 22a and 22b, and both ends of the island 21 and the outer end portions 22a and 22b are connected by connecting portions 23a and 23b, respectively. As a result, the outer end portions 22a and 22b are respectively held by the holding portions 74 during molding, so that the elastic force of the lead frame 20a acts on both ends of the island 21, so that only one outer end portion is formed during molding. Compared with the case where the pin is held by the pinching portion 74, the exposed surface 50 a of the fixing member 50 can be reliably pressed against the inner wall surface 72 a of the mold 70.

また、第１実施形態の第５変形例として、図１０に示すように、リードフレーム２０，３０に代えてリードフレーム２０ｂを採用してもよい。このリードフレーム２０ｂは、２つアイランド２４ａ，２４ｂを有しており、これらアイランド２４ａ，２４ｂ間の部位と外側端部２２とが連結部２３により連結されて形成されている。このようにしても、成形時に外側端部２２が挟持部７４により挟持されることで、当該リードフレーム２０ｂの弾性力がアイランド２４ａ，２４ｂのそれぞれに作用して、固定部材５０の露出面５０ａを金型７０の内壁面７２ａに押圧することができる。   Further, as a fifth modification of the first embodiment, as shown in FIG. 10, a lead frame 20 b may be employed instead of the lead frames 20 and 30. The lead frame 20b has two islands 24a and 24b, and a portion between the islands 24a and 24b and the outer end 22 are connected by a connecting portion 23. Even in this case, the outer end portion 22 is clamped by the clamping portion 74 at the time of molding, so that the elastic force of the lead frame 20b acts on each of the islands 24a and 24b, and the exposed surface 50a of the fixing member 50 is The inner wall surface 72a of the mold 70 can be pressed.

また、第１実施形態の第６変形例として、図１１に示すように、第１リードフレーム２０または第２リードフレーム３０に代えてリードフレーム２０ｃを採用してもよい。このリードフレーム２０ｃは、アイランド２１と外側端部２２とが連結部２５により連結されて構成されている。連結部２５は、断面Ｃ字状の第１連結部２５ａおよび第２連結部２５ｂが連結するように構成されており、第１連結部２５ａの下端部が第２連結部２５ｂ上端部よりも下方に位置するように形成されている（図１１の符号Ｘ参照）。   As a sixth modification of the first embodiment, as shown in FIG. 11, a lead frame 20 c may be employed instead of the first lead frame 20 or the second lead frame 30. The lead frame 20 c is configured by connecting an island 21 and an outer end 22 by a connecting portion 25. The connecting portion 25 is configured such that the first connecting portion 25a and the second connecting portion 25b having a C-shaped cross section are connected, and the lower end portion of the first connecting portion 25a is lower than the upper end portion of the second connecting portion 25b. It is formed so that it may be located in (refer the code | symbol X of FIG. 11).

このリードフレーム２０ｃは、例えば、図１２（Ａ）〜（Ｃ）に例示するようにして成形される。まず、図１２（Ａ）に示すように、アイランド２１が形成された平板状のフレーム素材を用意するとともに第１連結部２５ａを成形するための治具８１を用意し、この治具８１にフレーム素材を巻き付けることで、第１連結部２５ａが成形される。そして、図１２（Ｂ）に示すように、第２連結部２５ｂを成形するための治具８２を用意し、治具８１が第１連結部２５ａに巻き付けられたフレーム素材を、治具８２に巻き付けることで、図１２（Ｃ）に示すように、第２連結部２５ｂが成形される。これにより、図１１に示すリードフレーム２０ｃが完成する。   The lead frame 20c is formed, for example, as illustrated in FIGS. First, as shown in FIG. 12A, a plate-like frame material on which islands 21 are formed is prepared, and a jig 81 for forming the first connecting portion 25a is prepared. The 1st connection part 25a is shape | molded by winding a raw material. 12B, a jig 82 for forming the second connecting portion 25b is prepared, and the frame material around which the jig 81 is wound around the first connecting portion 25a is attached to the jig 82. By winding, the 2nd connection part 25b is shape | molded as shown in FIG.12 (C). Thereby, the lead frame 20c shown in FIG. 11 is completed.

このように形成されるリードフレーム２０ｃは、第１連結部２５ａの下端部が第２連結部２５ｂ上端部よりも下方に位置するように形成されているために、連結部２５のバネ性を利用することで、アイランド２１が内壁面７２ａに向けて押圧されるように外側端部２２に支持されることとなる。これにより、成形時に外側端部２２が挟持部７４により挟持されることで、アイランド２１に固定される固定部材５０の露出面５０ａを金型７０の内壁面７２ａに対して確実に押圧することができる。なお、治具８１および治具８２は、断面多角形状に形成されているが、これに限らず、例えば、断面円形状に形成されてもよい。   Since the lead frame 20c formed in this way is formed so that the lower end portion of the first connecting portion 25a is positioned below the upper end portion of the second connecting portion 25b, the spring property of the connecting portion 25 is used. Thus, the island 21 is supported by the outer end 22 so as to be pressed toward the inner wall surface 72a. As a result, the outer end 22 is clamped by the clamping unit 74 during molding, so that the exposed surface 50a of the fixing member 50 fixed to the island 21 can be reliably pressed against the inner wall surface 72a of the mold 70. it can. In addition, although the jig | tool 81 and the jig | tool 82 are formed in the cross-sectional polygonal shape, it is not restricted to this, For example, you may form in a cross-sectional circular shape.

また、第１実施形態の第７変形例として、図１３に示すように、第１リードフレーム２０と第３リードフレーム４０とを連結部９０により連結してもよい。これにより、アイランド２１に対して第１リードフレーム２０および第３リードフレーム４０の双方の弾性力を作用させることができるので、アイランド２１に固定される固定部材５０の露出面５０ａを金型７０の内壁面７２ａに対して確実に押圧することができる。また、第２リードフレーム３０と第３リードフレーム４０とを連結部９０により連結してもよいし、上述した第３変形例の様に、別途設けられるリードフレーム１９ａ，１９ｂと第３リードフレーム４０とを連結しても、上記効果を奏する。   As a seventh modification of the first embodiment, as shown in FIG. 13, the first lead frame 20 and the third lead frame 40 may be connected by a connecting portion 90. Thereby, since the elastic force of both the first lead frame 20 and the third lead frame 40 can be applied to the island 21, the exposed surface 50 a of the fixing member 50 fixed to the island 21 is set to the mold 70. The inner wall surface 72a can be reliably pressed. Further, the second lead frame 30 and the third lead frame 40 may be connected by the connecting portion 90, or separately provided lead frames 19a and 19b and the third lead frame 40 as in the third modification described above. Even if they are connected to each other, the above-mentioned effect is obtained.

また、第１実施形態の第８変形例として、図１４に示すように、両リードフレーム２０，３０のアイランド２１，３１に対して、さらに他の外側端部２６ａ，３６ａを連結部２６ｂ，３６ｂを介して連結してもよい。この場合、アイランド２１は、複数の外側端部２２，２６ａに連結され、アイランド３１は、複数の外側端部３２，３６ａに連結されるので、リードフレーム２０，３０の弾性力を効果的に利用して、アイランド２１，３１に固定される固定部材５０の露出面５０ａを内壁面７２ａに好適に押圧することができる。   Further, as an eighth modification of the first embodiment, as shown in FIG. 14, other outer end portions 26a and 36a are further connected to connecting portions 26b and 36b with respect to islands 21 and 31 of both lead frames 20 and 30, respectively. You may connect via. In this case, since the island 21 is connected to the plurality of outer end portions 22 and 26a and the island 31 is connected to the plurality of outer end portions 32 and 36a, the elastic force of the lead frames 20 and 30 is effectively used. Thus, the exposed surface 50a of the fixing member 50 fixed to the islands 21 and 31 can be suitably pressed against the inner wall surface 72a.

また、第１実施形態の第９変形例として、図１５（Ａ），（Ｂ）に示すように、第１リードフレーム２０および第２リードフレーム３０に代えて第１リードフレーム２０ｄおよび第２リードフレーム３０ｄを採用してもよい。第１リードフレーム２０ｄおよび第２リードフレーム３０ｄは、アイランド２１に連結する外側端部２２と，アイランド３１に連結する外側端部３２とが、互いに向かい合うように形成されている。これにより、固定部材５０が両側から押圧されるため、固定部材５０の露出面５０ａを内壁面７２ａに好適に押圧することができる。   As a ninth modification of the first embodiment, as shown in FIGS. 15A and 15B, instead of the first lead frame 20 and the second lead frame 30, the first lead frame 20d and the second lead frame are used. The frame 30d may be adopted. The first lead frame 20d and the second lead frame 30d are formed such that an outer end portion 22 connected to the island 21 and an outer end portion 32 connected to the island 31 face each other. Thereby, since the fixing member 50 is pressed from both sides, the exposed surface 50a of the fixing member 50 can be suitably pressed to the inner wall surface 72a.

［第２実施形態］
次に、本発明の第２実施形態に係る半導体装置について図１６を参照して説明する。図１６は、第２実施形態に係る半導体装置１０の要部を示す一部断面図である。
図１６に示すように、本第２実施形態に係る半導体装置１０は、リードフレーム２０，３０に代えてリードフレーム２０ｅ，３０ｅを採用する点が、上記第１実施形態および各変形例に係る半導体装置と異なる。したがって、第１実施形態の半導体装置と実質的に同一の構成部分には、同一符号を付し、その説明を省略する。 [Second Embodiment]
Next, a semiconductor device according to a second embodiment of the present invention will be described with reference to FIG. FIG. 16 is a partial cross-sectional view showing the main part of the semiconductor device 10 according to the second embodiment.
As shown in FIG. 16, the semiconductor device 10 according to the second embodiment employs lead frames 20 e and 30 e instead of the lead frames 20 and 30, and the semiconductor according to the first embodiment and each modification example. Different from the device. Therefore, substantially the same components as those of the semiconductor device of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

図１６に示すように、第１リードフレーム２０ｅは、外側端部２２が金型７０の挟持部７４により挟持されるとき、当該第１リードフレーム２０ｅの弾性力によりアイランド２１に固定される固定部材５０の露出面５０ａが内壁面７２ａに押圧されるように、アイランド２１が外側端部２２から離間するほど内壁面７２ａに近接して形成される。また、第２リードフレーム３０ｅも、第１リードフレーム２０ｅと同様に、外側端部３２が挟持部７４により挟持されるとき、当該第２リードフレーム３０ｅの弾性力によりアイランド３１に固定される固定部材５０の露出面５０ａが内壁面７２ａに押圧されるように、アイランド３１が外側端部３２から離間するほど内壁面７２ａに近接して形成される。なお、図１６では、内壁面７２ａに平行な面を二点鎖線αにて図示している。   As shown in FIG. 16, the first lead frame 20 e is a fixing member that is fixed to the island 21 by the elastic force of the first lead frame 20 e when the outer end portion 22 is held by the holding portion 74 of the mold 70. The island 21 is formed closer to the inner wall surface 72a as it is separated from the outer end portion 22 so that the exposed surface 50a of 50 is pressed against the inner wall surface 72a. Similarly to the first lead frame 20e, the second lead frame 30e is also a fixing member that is fixed to the island 31 by the elastic force of the second lead frame 30e when the outer end portion 32 is held by the holding portion 74. The island 31 is formed closer to the inner wall surface 72a as it is separated from the outer end portion 32 so that the exposed surface 50a of 50 is pressed against the inner wall surface 72a. In FIG. 16, a plane parallel to the inner wall surface 72a is indicated by a two-dot chain line α.

これにより、アイランド２１，３１が外側端部２２，３２から離間するほど内壁面７２ａから離間するように形成される場合と比較して、リードフレーム２０ｅ，３０ｅの弾性力に基づく固定部材５０を内壁面７２ａに押し付ける力が位置によってばらつくことが抑制されるので、固定部材５０の露出面５０ａと金型７０の内壁面７２ａとの間における隙間の発生を確実に抑制することができる。なお、上述した第１実施形態の各変形例におけるリードフレームを、本第２実施形態と同様に、アイランドが外側端部から離間するほど内壁面に近接するように形成することで、上記効果を奏する。   As a result, the fixing member 50 based on the elastic force of the lead frames 20e and 30e can be provided in an inner portion as compared with the case where the islands 21 and 31 are formed so as to be separated from the inner wall surface 72a as they are separated from the outer end portions 22 and 32. Since the force pressed against the wall surface 72a is suppressed from varying depending on the position, the generation of a gap between the exposed surface 50a of the fixing member 50 and the inner wall surface 72a of the mold 70 can be reliably suppressed. As in the second embodiment, the lead frame in each modification of the first embodiment described above is formed so as to be closer to the inner wall surface as the island is separated from the outer end portion. Play.

また、リードフレーム２０ｅ，３０ｅの弾性力に基づく固定部材５０を内壁面７２ａに均等に押し付ける力を強めるために、リードフレーム２０ｅ，３０ｅを反らせるように形成してもよい。なお、上述した第１実施形態の各変形例におけるリードフレームを反らせるように形成することで、各リードフレームの弾性力に基づく固定部材５０を内壁面７２ａに押し付ける力を強めてもよい。   Further, the lead frames 20e and 30e may be formed to warp in order to increase the force of pressing the fixing member 50 based on the elastic force of the lead frames 20e and 30e evenly on the inner wall surface 72a. In addition, you may strengthen the force which presses the fixing member 50 based on the elastic force of each lead frame to the inner wall surface 72a by forming so that the lead frame in each modification of 1st Embodiment mentioned above may be curved.

［第３実施形態］
次に、本発明の第３実施形態に係る半導体装置について図１７を参照して説明する。図１７は、第３実施形態に係る半導体装置１０の要部を示す一部断面図である。
図１７に示すように、本第３実施形態に係る半導体装置１０は、金型７０に代えて金型７０ａを採用する点が、上記第１実施形態および各変形例に係る半導体装置と異なる。したがって、第１実施形態の半導体装置と実質的に同一の構成部分には、同一符号を付し、その説明を省略する。 [Third Embodiment]
Next, a semiconductor device according to a third embodiment of the present invention will be described with reference to FIG. FIG. 17 is a partial cross-sectional view showing the main part of the semiconductor device 10 according to the third embodiment.
As shown in FIG. 17, the semiconductor device 10 according to the third embodiment is different from the semiconductor device according to the first embodiment and each modified example in that a die 70 a is used instead of the die 70. Therefore, substantially the same components as those of the semiconductor device of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

図１７に示すように、金型７０ａの下型７２には、封止用材料が注入される注入口（図示略）と内壁面７２ａとの間であって当該内壁面７２ａの近傍にて固定部材５０の外縁に沿うように凸部７５が形成される。なお、金型７０ａの注入口の少なくとも１つは、第３リードフレーム４０の外側端部４２を挟持する部位の近傍に設けられている。なお、図１７では、封止用材料の図示を省略している。   As shown in FIG. 17, the lower mold 72 of the mold 70a is fixed between an inlet (not shown) through which a sealing material is injected and the inner wall surface 72a, and in the vicinity of the inner wall surface 72a. A convex portion 75 is formed along the outer edge of the member 50. Note that at least one of the injection ports of the mold 70 a is provided in the vicinity of a portion that sandwiches the outer end portion 42 of the third lead frame 40. In FIG. 17, the sealing material is not shown.

これにより、注入口から注入された封止用材料が凸部７５を乗り越えると、この封止用材料が固定部材５０を内壁面７２ａに対して押圧するように当該固定部材５０に向けて流動するので（図１７の矢印β参照）、固定部材５０の露出面５０ａと金型７０の内壁面７２ａとの間における隙間の発生をより抑制することができる。なお、金型７０の上型７１に凸部を設けて、凸部に沿い流動する封止用材料が固定部材５０を内壁面７２ａに対して押圧することで、固定部材５０の露出面５０ａと金型７０の内壁面７２ａとの間における隙間の発生を抑制してもよい。なお、上述した第２実施形態や第１実施形態の各変形例における金型を、本第３実施形態と同様に、内壁面７２ａの近傍にて固定部材５０の外縁に沿うように凸部７５を設けることで、上記効果を奏する。   Thereby, when the sealing material injected from the injection port gets over the convex portion 75, the sealing material flows toward the fixing member 50 so as to press the fixing member 50 against the inner wall surface 72a. Therefore (see arrow β in FIG. 17), the generation of a gap between the exposed surface 50a of the fixing member 50 and the inner wall surface 72a of the mold 70 can be further suppressed. In addition, the convex part is provided in the upper mold 71 of the mold 70, and the sealing material that flows along the convex part presses the fixing member 50 against the inner wall surface 72a, so that the exposed surface 50a of the fixing member 50 and Generation | occurrence | production of the clearance gap between the inner wall surfaces 72a of the metal mold | die 70 may be suppressed. In addition, the convex part 75 is used so that the metal mold | die in each modification of 2nd Embodiment mentioned above or 1st Embodiment may follow the outer edge of the fixing member 50 in the vicinity of the inner wall surface 72a similarly to this 3rd Embodiment. By providing the above, the above-mentioned effect is achieved.

なお、本発明は上記各実施形態およびその変形例に限定されるものではなく、以下のように具体化してもよい。
（１）上述した固定部材５０を内壁面７２ａに向けて押圧する押圧部として、金型７０の押圧用ピン７３のみを採用してもよいし、挟持部７４のみを採用してもよい。また、上記押圧部として、押圧用ピン７３および挟持部７４に加えて、固定部材５０を内壁面７２ａに向けて押圧するための他の部材を採用してもよい。 In addition, this invention is not limited to said each embodiment and its modification, You may actualize as follows.
(1) As a pressing portion that presses the fixing member 50 toward the inner wall surface 72a, only the pressing pin 73 of the mold 70 may be employed, or only the clamping portion 74 may be employed. Further, as the pressing portion, in addition to the pressing pin 73 and the clamping portion 74, another member for pressing the fixing member 50 toward the inner wall surface 72a may be employed.

（２）アイランド２１，３１等に実装される素子は、パワー素子１１，１２に限らず、他の半導体素子であってもよい。 (2) The elements mounted on the islands 21 and 31 are not limited to the power elements 11 and 12 and may be other semiconductor elements.

１０…半導体装置
１１，１２…パワー素子（半導体素子）
１３…制御ＩＣ
１９ａ，１９ｂ…リードフレーム（接触部）
２０，２０ａ〜２０ｅ，３０，３０ｄ，３０ｅ，４０…リードフレーム
２１，２４ａ，２４ｂ，３１，４１…アイランド
２２，２６ａ，３２，３６ａ…外側端部（被挟持部）
５０…固定部材
５０ａ…露出面
５０ｂ…非固定部
５１…絶縁シート（絶縁部材）
５２…銅箔（放熱部材）
６０…モールド樹脂（封止部材）
７０，７０ａ…金型
７１…上型
７２…下型
７２ａ…内壁面
７３…押圧用ピン（押圧部）
７４…挟持部（押圧部）
７５…凸部 DESCRIPTION OF SYMBOLS 10 ... Semiconductor device 11, 12 ... Power element (semiconductor element)
13 ... Control IC
19a, 19b ... Lead frame (contact part)
20, 20a to 20e, 30, 30d, 30e, 40 ... lead frame 21, 24a, 24b, 31, 41 ... island 22, 26a, 32, 36a ... outer end portion (clamped portion)
DESCRIPTION OF SYMBOLS 50 ... Fixed member 50a ... Exposed surface 50b ... Non-fixed part 51 ... Insulating sheet (insulating member)
52 ... Copper foil (heat dissipation member)
60 ... Mold resin (sealing member)
70, 70a ... mold 71 ... upper mold 72 ... lower mold 72a ... inner wall surface 73 ... pressing pin (pressing part)
74 ... clamping part (pressing part)
75 ... convex

Claims (4)

リードフレームのアイランドの一側面に半導体素子が実装されるとともに他側面に固定部材が固定され、この固定部材の露出面が露出するように前記半導体素子および前記アイランドが封止部材により封止される半導体装置の製造方法であって、
前記アイランドが形成された前記リードフレームを用意する第１工程と、
前記アイランドの前記他側面に前記固定部材を固定するとともに前記アイランドの前記一側面に前記半導体素子を実装する第２工程と、
前記固定部材および前記半導体素子が取り付けられた前記アイランドを金型内に配置して、型締時にこの金型に設けられる押圧部により前記露出面が前記金型の内壁面に面接触するように前記固定部材を前記内壁面に向けて押圧する第３工程と、
前記金型内に前記封止部材を構成する封止用材料を注入して前記固定部材の前記露出面が露出するように前記半導体素子および前記アイランドを封止する第４工程と、
を備え、
前記押圧部は、前記金型に複数個所設けられ、
前記リードフレームには、複数のアイランドが形成されており、
前記第２工程では、前記複数のアイランドのそれぞれの前記他側面に共通の前記固定部材を固定し、
前記第２工程では、前記半導体素子が前記アイランドの前記一側面に実装された後に、当該半導体素子と前記封止部材により封止される他の素子とを電気的に接続し、
前記押圧部は、前記金型に取り付けられる押圧用ピンであって、
前記第３工程では、前記押圧用ピンにより、前記固定部材のうち前記アイランドが固定される固定部と異なる非固定部が前記内壁面に向けて押圧され、
前記リードフレームには、前記アイランドと異なる部位であって、前記押圧用ピンと前記非固定部との双方に押圧状態で接触する接触部が設けられることを特徴とする半導体装置の製造方法。 A semiconductor element is mounted on one side surface of the island of the lead frame, and a fixing member is fixed to the other side surface. The semiconductor element and the island are sealed by the sealing member so that an exposed surface of the fixing member is exposed. A method for manufacturing a semiconductor device, comprising:
A first step of preparing the lead frame on which the island is formed;
A second step of fixing the fixing member to the other side surface of the island and mounting the semiconductor element on the one side surface of the island;
The island to which the fixing member and the semiconductor element are attached is arranged in a mold so that the exposed surface comes into surface contact with the inner wall surface of the mold by a pressing portion provided in the mold when the mold is clamped. A third step of pressing the fixing member toward the inner wall surface;
A fourth step of sealing the semiconductor element and the island so that the sealing material constituting the sealing member is injected into the mold and the exposed surface of the fixing member is exposed;
With
A plurality of the pressing portions are provided in the mold,
A plurality of islands are formed in the lead frame,
In the second step, the common fixing member is fixed to the other side surface of each of the plurality of islands,
In the second step, after the semiconductor element is mounted on the one side surface of the island, the semiconductor element and another element sealed by the sealing member are electrically connected,
The pressing portion is a pressing pin attached to the mold,
In the third step, the non-fixed portion different from the fixed portion to which the island is fixed is pressed toward the inner wall surface by the pressing pin.
2. A method of manufacturing a semiconductor device according to claim 1, wherein the lead frame is provided with a contact portion that is different from the island and contacts both the pressing pin and the non-fixed portion in a pressed state. 前記第２工程では、前記半導体素子が前記アイランドの前記一側面に実装された後に、当該半導体素子と前記封止部材により封止される他の素子とをワイヤボンディングにより電気的に接続することを特徴とする請求項１に記載の半導体装置の製造方法。   In the second step, after the semiconductor element is mounted on the one side surface of the island, the semiconductor element and another element sealed by the sealing member are electrically connected by wire bonding. The method of manufacturing a semiconductor device according to claim 1, wherein: 前記固定部材は、絶縁部材に放熱部材の一側面を貼り付けて構成され、前記放熱部材の他側面が前記露出面として前記封止部材から露出することを特徴とする請求項１または２に記載の半導体装置の製造方法。   The said fixing member is comprised by affixing one side surface of a heat radiating member on an insulating member, The other side surface of the said heat radiating member is exposed from the said sealing member as the said exposed surface, The Claim 1 or 2 characterized by the above-mentioned. Semiconductor device manufacturing method. 前記絶縁部材は、接着性を有する絶縁シートであることを特徴とする請求項３に記載の半導体装置の製造方法。   The method for manufacturing a semiconductor device according to claim 3, wherein the insulating member is an insulating sheet having adhesiveness.
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