JP2008218703A - Semiconductor device and its production process - Google Patents

Semiconductor device and its production process Download PDF

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JP2008218703A
JP2008218703A JP2007054004A JP2007054004A JP2008218703A JP 2008218703 A JP2008218703 A JP 2008218703A JP 2007054004 A JP2007054004 A JP 2007054004A JP 2007054004 A JP2007054004 A JP 2007054004A JP 2008218703 A JP2008218703 A JP 2008218703A
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heat spreader
inner lead
wire
lead
semiconductor chip
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Tatsuyuki Taira
龍幸 平
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Renesas Technology Corp
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Renesas Technology Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To improve the yield and the quality of a semiconductor device. <P>SOLUTION: A projecting part 71 provided in a heat stage 70 is disposed at an opening part 42 of a heat spreader 40 bonded to the back surface 31a of an inner lead 31 of a lead frame 30 at the time of connecting a semiconductor chip 20 and the inner lead 31 with a wire 50. A top end part 33 of the inner lead 31 and the wire 50 are joined in a state that the top end part 33 of the inner lead 31 is contacted directly with the projecting part 71 of the heat stage 70. Since the top end part 33 to be joined with the wire 50 is directly contacted with the stable heat stage 70, an ultrasonic wave is transmitted effectively so that joint failure of the wire 50 to the inner lead 31 is prevented, and thus a semiconductor device 10 is assembled preferably. Therefore, the product yield is improved and the product quality is improved as well. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体装置の製造技術に関し、特に、ヒートスプレッダ付きプラスチックモールドパッケージにおけるワイヤボンディングプロセスに適用して有効な技術に関する。   The present invention relates to a manufacturing technique of a semiconductor device, and more particularly to a technique effective when applied to a wire bonding process in a plastic mold package with a heat spreader.

リードフレームにヒートスプレッダを接着し、放熱性を高めた構造の半導体装置（ＨＱＦＰ）であって、リードフレームを、ヒートスプレッダの貼り付け時、インナリードの先端が動かないようにインナリード間を接続部で接続した状態にしておき、ヒートスプレッダの貼り付け後に、接続してあるインナリードの接続部を切断し、インナリードを個々に独立させる技術がある。そして、このようにして製造された、裏面にヒートスプレッダが接着されたリードフレームを用いてＨＱＦＰが製造されると、プレス加工時にインナリード先端のずれをなくしてリード間のショートを防ぎ、リードフレームのプレス化によって製品コストを低減することができる（例えば、特許文献１参照）。
特開２００２−３６８１８１号公報（図１） A semiconductor device (HQFP) with a heat spreader bonded to the lead frame to improve heat dissipation, and the lead frame is connected between the inner leads at the connecting part so that the tip of the inner lead does not move when the heat spreader is attached. There is a technique in which the connected inner leads are cut off after the heat spreader is pasted and the inner leads are individually connected after the heat spreader is pasted. Then, when the HQFP is manufactured using the lead frame manufactured in this way and having the heat spreader bonded to the back surface, the inner lead tip is not displaced during press working to prevent a short circuit between the leads. Product cost can be reduced by pressing (see, for example, Patent Document 1).
JP 2002-368181 A (FIG. 1)

半導体装置の中には、リードにヒートスプレッダを接着して放熱性を高めた構造のもの（ＨＱＦＰ：ヒートスプレッダ付きＱｕａｄ Ｆｌａｔ Ｐａｃｋａｇｅ）がある。前記ＨＱＦＰとしては、リードフレームにおけるインナリードの裏面に、接着剤層を介して一枚板の金属板からなるヒートスプレッダを接着し、これにより放熱性を高めるようになっているものが多い。   Some semiconductor devices have a structure (HQFP: Quad Flat Package with a heat spreader) in which a heat spreader is bonded to a lead to improve heat dissipation. As the HQFP, a heat spreader made of a single metal plate is bonded to the back surface of the inner lead in the lead frame via an adhesive layer, thereby improving heat dissipation.

ところで、前記したようなＨＱＦＰの製造工程には、リードフレームの略中央のヒートスプレッダに搭載された半導体チップの電極とリードフレームのインナリードの先端部とをワイヤを用いて電気的に接続する、所謂ワイヤボンディング工程がある。このワイヤボンディング工程は、例えば、次のような手順で行われる。まず、ヒートスプレッダに半導体チップが搭載されたリードフレームを、半導体チップ及びインナリードが上側、接着剤層を介してヒートスプレッダが下側になるようにヒートステージに配置する。そして、キャピラリに通されたワイヤを、半導体チップの電極及びインナリードの先端部に超音波と熱で圧着して接合することで、半導体チップとインナリードとを電気的に接続するのである。   By the way, in the manufacturing process of HQFP as described above, the so-called electrode of the semiconductor chip mounted on the heat spreader at the substantially center of the lead frame and the tip of the inner lead of the lead frame are electrically connected using a wire. There is a wire bonding process. This wire bonding process is performed by the following procedure, for example. First, the lead frame on which the semiconductor chip is mounted on the heat spreader is arranged on the heat stage so that the semiconductor chip and the inner lead are on the upper side and the heat spreader is on the lower side through the adhesive layer. Then, the semiconductor chip and the inner lead are electrically connected by bonding the wire passed through the capillary to the electrode of the semiconductor chip and the tip of the inner lead by pressure bonding with ultrasonic waves and heat.

本発明者は、このような半導体装置の製造工程及び当該工程を用いて製造された半導体装置における問題点について検討するに当たり、次に示すような比較例を挙げて検討した。ここでは、比較例として、ヒートスプレッダに開口部を有していない一枚板のヒートスプレッダを接着したリードフレームを用いたワイヤボンディングについて説明する。なお、後述する本実施の形態と同様のものには同じ符号を付して説明を省略する。図７は比較例のワイヤボンディング工程におけるリードフレーム等の構造の一例を示す平面図、図８は図７に示すリードフレーム等におけるＢ−Ｂ線に沿って切断した構造を示す断面図、図９は図８に示すリードフレーム等におけるＣ部を拡大した部分断面図である。   In examining the manufacturing process of such a semiconductor device and the problems in the semiconductor device manufactured by using the process, the present inventor has considered the following comparative example. Here, as a comparative example, wire bonding using a lead frame in which a single-plate heat spreader having no opening is bonded to the heat spreader will be described. In addition, the same code | symbol is attached | subjected to the thing similar to this Embodiment mentioned later, and description is abbreviate | omitted. 7 is a plan view showing an example of the structure of the lead frame and the like in the wire bonding step of the comparative example, FIG. 8 is a cross-sectional view showing the structure cut along the line BB in the lead frame and the like shown in FIG. FIG. 9 is an enlarged partial cross-sectional view of a portion C in the lead frame or the like shown in FIG.

図７〜図９に示すように、比較例のＨＱＦＰの製造工程におけるワイヤボンディングでは、リードフレーム１３０におけるインナリード３１の先端部３３とワイヤ５０とを接合する際に、インナリード３１が接着剤層１４１を有する一枚板のヒートスプレッダ１４０を介してヒートステージ１７０に配置された状態となっている。そして、このような状態のインナリード３１にワイヤ５０を接合することになる。   As shown in FIGS. 7 to 9, in the wire bonding in the manufacturing process of the HQFP of the comparative example, when the tip portion 33 of the inner lead 31 and the wire 50 in the lead frame 130 are joined, the inner lead 31 is bonded to the adhesive layer. In this state, the heat spreader 140 is disposed on the heat stage 170 via the single-plate heat spreader 140 having the heat spreader 141. And the wire 50 is joined to the inner lead 31 in such a state.

この場合、特に接着剤層１４１が弾力のある材料で構成されていることが多いため、その上のインナリード３１の位置が安定せず、キャピラリ（図示省略）から発せられた超音波の応力が有効に伝達されないことがある。すると、インナリード３１に対するワイヤ５０の接合強度が弱くなってしまう。このため、インナリード３１にワイヤ５０が接合し難く、また一旦インナリード３１の先端部３３のワイヤ接合部３４にワイヤ５０が接合しても剥がれ易くなってしまう（図９の矢印Ｄ参照）。また、図９に示すように、超音波及びヒートステージ１７０からの熱で接着剤層１４１にボイドＢが発生する場合もあり、さらに超音波の伝達を妨げる原因となる。これらにより、ワイヤ５０の接合不良が生じて半導体装置の組立不良が生じることになり、その結果、製品の歩留まりが悪くなり、製品の品質も悪化してしまうことになる。   In this case, in particular, the adhesive layer 141 is often made of an elastic material, so that the position of the inner lead 31 on the adhesive layer 141 is not stable, and the stress of ultrasonic waves emitted from the capillary (not shown) is increased. It may not be transmitted effectively. As a result, the bonding strength of the wire 50 to the inner lead 31 is weakened. For this reason, it is difficult to bond the wire 50 to the inner lead 31, and even if the wire 50 is once bonded to the wire bonding portion 34 of the distal end portion 33 of the inner lead 31, the wire 50 is easily peeled off (see arrow D in FIG. 9). In addition, as shown in FIG. 9, void B may be generated in the adhesive layer 141 due to the ultrasonic wave and heat from the heat stage 170, which further hinders transmission of the ultrasonic wave. As a result, defective bonding of the wire 50 occurs, resulting in defective assembly of the semiconductor device. As a result, the yield of the product deteriorates and the quality of the product also deteriorates.

また、前記したような、インナリードに一枚板の金属板からなるヒートスプレッダを接着したリードフレームを用いて組み立てられるＨＱＦＰでは、半導体チップ、ワイヤ及びヒートスプレッダを樹脂封止した際に、リードフレームの上側の封止体と下側の封止体がヒートスプレッダの側面のみで繋がることになる。このため、封止体とヒートスプレッダとの接着及びインナリードとヒートスプレッダとの接着が弱くなり易く、封止体とヒートスプレッダの剥離及びインナリードとヒートスプレッダとの剥離が発生する可能性がある。また、リードフレームの上側の封止体と下側の封止体がヒートスプレッダの側面のみで繋がることから、ヒートスプレッダに反りが発生することもあり、これは製品の反りの発生に繋がる。これらにより、半導体装置の製品不良が生じて製品の歩留りが悪くなり、製品の品質も悪化させることになる。   Further, in the HQFP assembled using the lead frame in which the heat spreader made of a single metal plate is bonded to the inner lead as described above, when the semiconductor chip, the wire, and the heat spreader are resin-sealed, the upper side of the lead frame The lower sealing body and the lower sealing body are connected only by the side surface of the heat spreader. For this reason, the adhesion between the sealing body and the heat spreader and the adhesion between the inner lead and the heat spreader are likely to be weak, and there is a possibility that peeling between the sealing body and the heat spreader and peeling between the inner lead and the heat spreader may occur. Further, since the upper sealing body and the lower sealing body of the lead frame are connected only by the side surface of the heat spreader, the heat spreader may be warped, which leads to the warpage of the product. As a result, a defective product of the semiconductor device occurs, the product yield deteriorates, and the product quality also deteriorates.

そこで、本発明者は、インナリードにヒートスプレッダを接着したリードフレームを用いて組み立てられる半導体装置において、インナリードとワイヤとの接合を確実に行う技術及びリードフレームの上側の封止体と下側の封止体との繋がりを強固にする技術を検討し、本発明に至った。   In view of this, the present inventor, in a semiconductor device assembled using a lead frame in which a heat spreader is bonded to an inner lead, a technique for reliably joining the inner lead and the wire, and an upper sealing body and a lower side of the lead frame. A technique for strengthening the connection with the sealing body has been studied, and the present invention has been achieved.

なお、特許文献１には、インナリードとワイヤとの接合状態を向上させる方法や、リードフレームにおけるヒートスプレッダの上側の封止体と下側の封止体との繋がりを向上させる方法に関する記載は一切ない。   In Patent Document 1, there is no description regarding a method for improving the bonding state between the inner lead and the wire and a method for improving the connection between the upper sealing body and the lower sealing body of the heat spreader in the lead frame. Absent.

本発明の目的は、インナリードとワイヤとの接合を確実に行うことや、ヒートスプレッダの上側の封止体と下側の封止体との繋がりを良くすることで、製品の歩留りを向上させることができる技術を提供することにある。   An object of the present invention is to improve the yield of products by reliably joining an inner lead and a wire and by improving the connection between an upper sealing body and a lower sealing body of a heat spreader. It is to provide the technology that can.

また、本発明の他の目的は、製品の品質を向上させることができる技術を提供することにある。   Another object of the present invention is to provide a technique capable of improving the quality of a product.

本発明の前記ならびにその他の目的と新規な特徴は、本明細書の記述及び添付図面から明らかになるであろう。   The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば、以下のとおりである。   Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

すなわち、本発明は、複数のインナリード及びアウタリードを有し、複数のインナリードの裏面に絶縁性の接着剤層を介してヒートスプレッダが接着されたリードフレームを準備する工程と、ヒートスプレッダの表面上に半導体チップを搭載する工程と、半導体チップの電極とリードフレームのインナリードの先端部とをワイヤにより電気的に接続する工程とを有するものである。そして、リードフレームに接着されたヒートスプレッダは、各インナリードの先端部のワイヤ接合部と反対側の裏面を露出させるように貫通した開口部を備えているものである。さらに、インナリードの先端部とワイヤとを接続する際に、ヒートスプレッダが下側になるようにしてリードフレームを配置するヒートステージにおけるヒートスプレッダの開口部が位置する箇所には、当該開口部の形状に合わせた突出部が設けられており、インナリードの先端部のワイヤ接合部の裏面がヒートステージの突出部に直接接触した状態で、インナリードの先端部とワイヤとの接続を行うものである。   That is, the present invention provides a step of preparing a lead frame having a plurality of inner leads and an outer lead, the heat spreader being bonded to the back surface of the plurality of inner leads via an insulating adhesive layer, and on the surface of the heat spreader. A step of mounting the semiconductor chip, and a step of electrically connecting the electrode of the semiconductor chip and the tip of the inner lead of the lead frame with a wire. The heat spreader bonded to the lead frame is provided with an opening that penetrates so as to expose the back surface opposite to the wire bonding portion at the tip of each inner lead. Furthermore, when connecting the tip of the inner lead and the wire, the location of the heat spreader opening in the heat stage where the lead frame is arranged so that the heat spreader is on the lower side has the shape of the opening. The combined protrusion is provided, and the inner lead tip and the wire are connected in a state where the back surface of the wire bonding portion at the tip of the inner lead is in direct contact with the protrusion of the heat stage.

また、本発明は、所定の回路が形成された半導体チップと、半導体チップの周囲に配置された複数のインナリードと、複数のインナリードの裏面に絶縁性の接着剤層を介して接着されたヒートスプレッダと、半導体チップの電極とインナリードの先端部とを電気的に接続するワイヤと、半導体チップ、ワイヤ及びヒートスプレッダを封止する封止体と、封止体から外方に露出する複数のアウタリードとを有するものである。そして、ヒートスプレッダは、各インナリードの先端部のワイヤ接合部と反対側の裏面を露出させるように貫通した開口部を備え、開口部に封止体の一部が配置されているものである。   Further, according to the present invention, a semiconductor chip on which a predetermined circuit is formed, a plurality of inner leads arranged around the semiconductor chip, and a back surface of the plurality of inner leads are bonded to each other through an insulating adhesive layer A heat spreader, a wire for electrically connecting the electrode of the semiconductor chip and the tip of the inner lead, a sealing body for sealing the semiconductor chip, the wire and the heat spreader, and a plurality of outer leads exposed outward from the sealing body It has. And a heat spreader is provided with the opening part penetrated so that the back surface on the opposite side to the wire junction part of the front-end | tip part of each inner lead might be exposed, and a part of sealing body is arrange | positioned in the opening part.

本願において開示される発明のうち、代表的なものによって得られる効果を簡単に説明すれば、以下のとおりである。   Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

半導体チップとインナリードとをワイヤで接続する際に、リードフレームのインナリードの裏面に接着されたヒートスプレッダの開口部に、ヒートステージに設けられた突出部を配置し、インナリードの先端部がヒートステージの突出部に直接接触した状態で、インナリードの先端部とワイヤとの接合を行うため、確実にワイヤをインナリードに接合させることができる。   When connecting the semiconductor chip and the inner lead with a wire, a protrusion provided on the heat stage is placed in the opening of the heat spreader bonded to the back surface of the inner lead of the lead frame, and the tip of the inner lead is heated. Since the tip of the inner lead and the wire are joined in a state of being in direct contact with the protruding portion of the stage, the wire can be reliably joined to the inner lead.

すなわち、ワイヤと接合するインナリードの先端部が、弾力のない安定したヒートステージに直接接触していることで、キャピラリから発せられた超音波を有効に伝達させることができるため、インナリードに対するワイヤの接合強度を強くすることができる。これにより、インナリードとワイヤとの接合不良を解消して良好な接合状態を実現でき、半導体装置の組立を良好に行うことができる。したがって、製品の歩留りを向上させることができると共に、製品の品質を向上させることができる。   That is, since the tip of the inner lead joined to the wire is in direct contact with a stable heat stage without elasticity, the ultrasonic wave emitted from the capillary can be effectively transmitted. The bonding strength of can be increased. As a result, the bonding failure between the inner lead and the wire can be eliminated and a good bonding state can be realized, and the semiconductor device can be assembled satisfactorily. Therefore, the yield of the product can be improved and the quality of the product can be improved.

また、半導体装置において、インナリードの裏面に接着されたヒートスプレッダが、貫通した開口部を備えており、ヒートスプレッダの上側の封止体と下側の封止体が、ヒートスプレッダの側面のみで繋がるのではなく、ヒートスプレッダの開口部を通してチップ周辺付近でも繋がることになる。このため、封止体とヒートスプレッダとの接着及びインナリードとヒートスプレッダとの接着が強固になり、封止体とヒートスプレッダの剥離及びインナリードとヒートスプレッダとの剥離を防止することができる。   Further, in the semiconductor device, the heat spreader bonded to the back surface of the inner lead has an opening that penetrates, and the upper sealing body and the lower sealing body of the heat spreader are connected only by the side surface of the heat spreader. In other words, it is also connected near the periphery of the chip through the opening of the heat spreader. For this reason, adhesion between the sealing body and the heat spreader and adhesion between the inner lead and the heat spreader are strengthened, and separation between the sealing body and the heat spreader and separation between the inner lead and the heat spreader can be prevented.

また、ヒートスプレッダの上側の封止体と下側の封止体が、ヒートスプレッダの側面のみではなく、ヒートスプレッダの開口部を通してチップ周辺付近でも繋がることから、ヒートスプレッダの反りを防止することができ、これにより、製品の反りを防止することができる。   In addition, since the upper sealing body and the lower sealing body of the heat spreader are connected not only to the side surface of the heat spreader but also around the chip through the opening of the heat spreader, it is possible to prevent the heat spreader from warping. , Can prevent product warping.

これらにより、半導体装置の製品不良を少なくして製品の歩留りを向上させることができると共に、製品の品質を向上させることができる。   As a result, product defects of the semiconductor device can be reduced to improve product yield, and product quality can be improved.

以下の実施の形態では特に必要なとき以外は同一または同様な部分の説明を原則として繰り返さない。   In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

さらに、以下の実施の形態では便宜上その必要があるときは、複数のセクションまたは実施の形態に分割して説明するが、特に明示した場合を除き、それらはお互いに無関係なものではなく、一方は他方の一部または全部の変形例、詳細、補足説明などの関係にある。   Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other part or all of the modifications, details, supplementary explanations, and the like are related.

また、以下の実施の形態において、要素の数など（個数、数値、量、範囲などを含む）に言及する場合、特に明示した場合及び原理的に明らかに特定の数に限定される場合などを除き、その特定の数に限定されるものではなく、特定の数以上でも以下でも良いものとする。   Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.

以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、実施の形態を説明するための全図において、同一の機能を有する部材には同一の符号を付し、その繰り返しの説明は省略する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

（実施の形態）
図１は本発明の実施の形態の半導体装置（ＨＱＦＰ）の構造の一例を示す断面図、図２は図１に示す半導体装置の組み立て手順の一例を示す製造プロセスフロー図、図３は図２のフレーム準備工程におけるリードフレームの構造の一例を示す平面図、図４は図２のフレーム準備工程におけるリードフレームの構造の一例を簡略化して示す平面図である。また、図５は図２のワイヤボンディング工程におけるリードフレーム等の構造の一例を簡略化して示す平面図、図６は図５に示すリードフレーム等におけるＡ−Ａ線に沿って切断した構造を示す断面図である。なお、図４及び図５は、本実施の形態の特徴部分を強調するため、リードのピン数を減らして構造を簡略化した図である。 (Embodiment)
1 is a sectional view showing an example of the structure of a semiconductor device (HQFP) according to an embodiment of the present invention, FIG. 2 is a manufacturing process flow diagram showing an example of an assembly procedure of the semiconductor device shown in FIG. 1, and FIG. FIG. 4 is a plan view schematically showing an example of the structure of the lead frame in the frame preparation step of FIG. 2. 5 is a plan view schematically showing an example of the structure of the lead frame and the like in the wire bonding step of FIG. 2, and FIG. 6 shows the structure cut along the line AA in the lead frame and the like shown in FIG. It is sectional drawing. 4 and 5 are diagrams in which the structure is simplified by reducing the number of lead pins in order to emphasize the characteristic portions of the present embodiment.

まず、図１及び図２を用いて、本発明の実施の形態の半導体装置の一例の構成を説明する。本実施の形態の半導体装置は、リードフレームにヒートスプレッダを接着して組み立てられるものであり、これにより放熱性を高めた構造のＨＱＦＰである。本実施の形態のＨＱＦＰ１０は、所定の回路が形成された半導体チップ２０と、半導体チップ２０の周囲に配置された複数のインナリード３１と、複数のインナリード３１の裏面３１ａに絶縁性の接着剤層４１を介して接着されたヒートスプレッダ４０とを有している。また、本実施の形態のＨＱＦＰ１０は、半導体チップ２０のパッド（電極）２１とインナリード３１の先端部３３とを電気的に接続するワイヤ５０と、半導体チップ２０、ワイヤ５０及びヒートスプレッダ４０を封止する封止体６０と、封止体６０から外方に露出する複数のアウタリード３５とを有している。   First, the structure of an example of a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. The semiconductor device of this embodiment is an HQFP having a structure in which heat dissipation is improved by bonding a heat spreader to a lead frame. The HQFP 10 according to the present embodiment includes a semiconductor chip 20 on which a predetermined circuit is formed, a plurality of inner leads 31 disposed around the semiconductor chip 20, and an insulating adhesive on the back surfaces 31a of the plurality of inner leads 31. And a heat spreader 40 bonded through a layer 41. The HQFP 10 of the present embodiment also seals the wire 50 that electrically connects the pad (electrode) 21 of the semiconductor chip 20 and the tip 33 of the inner lead 31, and the semiconductor chip 20, the wire 50, and the heat spreader 40. And a plurality of outer leads 35 exposed outward from the sealing body 60.

半導体チップ２０は、例えば、シリコン基板上に形成されたＡＳＩＣ（Ａｐｐｌｉｃａｔｉｏｎ Ｓｐｅｃｉｆｉｃ Ｉｎｔｅｇｒａｔｅｄ Ｃｉｒｃｕｉｔ）やマイクロコンピュータなどを有し、この表面上にアルミニウムなどのパッド２１が設けられ、内部に形成されたＡＳＩＣやマイクロコンピュータなどの所定の回路の各端子から表面上のパッド２１まで電気的に接続されている。   The semiconductor chip 20 includes, for example, an ASIC (Application Specific Integrated Circuit) formed on a silicon substrate, a microcomputer, etc., and a pad 21 such as aluminum is provided on the surface, and an ASIC or microchip formed inside is provided. Electrical connection is made from terminals of a predetermined circuit such as a computer to pads 21 on the surface.

リードフレーム３０は、例えば銅などのプレス加工フレームからなり、複数のインナリード３１及びこれに繋がる複数のアウタリード３５を有している。各インナリード３１は半導体チップ２０の各パッド２１とワイヤ５０により電気的に接続され、また各アウタリード３５は封止体６０から突出して成形されて外部端子となる。   The lead frame 30 is made of a press-worked frame such as copper, and has a plurality of inner leads 31 and a plurality of outer leads 35 connected thereto. Each inner lead 31 is electrically connected to each pad 21 of the semiconductor chip 20 by a wire 50, and each outer lead 35 is formed to project from the sealing body 60 to be an external terminal.

また、リードフレーム３０は、その裏面にヒートスプレッダ４０を有している。当該ヒートスプレッダ４０は、例えば銅などの薄板からなり、リードフレーム３０のインナリード３１の裏面３１ａの所定範囲に接着され、半導体チップ２０の発熱がヒートスプレッダ４０からインナリード３１及びアウタリード３５を通じて実装基板に放熱されるようになっている。本実施の形態のヒートスプレッダ４０は、図４に示すように、リードフレーム３０における半導体チップ２０のチップ搭載領域３２を中心として各インナリード３１の延在方向の長さの２／３程度までの範囲を覆う略方形状の薄板からなっている。なお、ヒートスプレッダ４０の大きさ及び形状は、前記したものに限らず、適宜の大きさ及び形状に形成されていれば良い。また、当該ヒートスプレッダ４０の表面４０ａには、全体に絶縁性の接着剤が塗布されて接着剤層４１となっており、この接着剤層４１を介してヒートスプレッダ４０がリードフレーム３０のインナリード３１の裏面３１ａに接着されている。   The lead frame 30 also has a heat spreader 40 on the back surface. The heat spreader 40 is made of, for example, a thin plate such as copper, and is adhered to a predetermined range of the back surface 31 a of the inner lead 31 of the lead frame 30. It has come to be. As shown in FIG. 4, the heat spreader 40 of the present embodiment has a range up to about 2/3 of the length in the extending direction of each inner lead 31 around the chip mounting region 32 of the semiconductor chip 20 in the lead frame 30. It consists of a substantially rectangular thin plate that covers. In addition, the magnitude | size and shape of the heat spreader 40 are not restricted to what was mentioned above, What is necessary is just to be formed in the appropriate magnitude | size and shape. In addition, an insulating adhesive is applied to the entire surface 40 a of the heat spreader 40 to form an adhesive layer 41, and the heat spreader 40 is connected to the inner leads 31 of the lead frame 30 through the adhesive layer 41. Bonded to the back surface 31a.

なお、リードフレーム３０の略中央のチップ搭載領域３２には、図１に示すように、ヒートスプレッダ４０の表面４０ａの接着剤層４１が露出しており、当該接着剤層４１を有するヒートスプレッダ４０に、半導体チップ２０が銀ペースト２２（又は半田ペースト等）を介して接着されている。このようにして、ヒートスプレッダ４０の表面４０ａ上に半導体チップ２０を搭載している。   As shown in FIG. 1, the adhesive layer 41 on the surface 40 a of the heat spreader 40 is exposed in the chip mounting region 32 in the substantially center of the lead frame 30, and the heat spreader 40 having the adhesive layer 41 is exposed to the heat spreader 40. The semiconductor chip 20 is bonded via a silver paste 22 (or solder paste or the like). In this way, the semiconductor chip 20 is mounted on the surface 40 a of the heat spreader 40.

また、ヒートスプレッダ４０には、その表面４０ａから裏面４０ｂに貫通した開口部４２を備えている。当該開口部４２は、インナリード３１における先端部３３のワイヤ接合部３４と反対側の裏面３１ａを露出させ、かつヒートスプレッダ４０の表面４０ａから裏面４０ｂまで貫通する貫通孔である。また、本実施の形態のヒートスプレッダ４０は、複数の開口部４２を備えている。具体的には、図３〜図５に示すように、ヒートスプレッダ４０において、全てのインナリード３１における先端部３３のワイヤ接合部３４と反対側の裏面３１ａが抜き加工によって形成される開口部４２に露出するように、チップ搭載領域３２を囲む４箇所、すなわち、搭載される方形状の半導体チップ２０の上面からみた４辺に沿った４箇所にそれぞれ開口部４２を備えている。   The heat spreader 40 includes an opening 42 that penetrates from the front surface 40a to the back surface 40b. The opening 42 is a through hole that exposes the back surface 31 a of the inner lead 31 on the side opposite to the wire bonding portion 34 of the tip 33 and penetrates from the front surface 40 a to the back surface 40 b of the heat spreader 40. The heat spreader 40 according to the present embodiment includes a plurality of openings 42. Specifically, as shown in FIGS. 3 to 5, in the heat spreader 40, the back surface 31 a opposite to the wire bonding portion 34 of the tip portion 33 of all the inner leads 31 is formed in the opening 42 formed by punching. In order to be exposed, openings 42 are respectively provided at four locations surrounding the chip mounting region 32, that is, at four locations along the four sides viewed from the upper surface of the mounted rectangular semiconductor chip 20.

それぞれの開口部４２は、インナリード３１の延在方向に沿って抜き加工されており、ヒートスプレッダ４０の内側から外側に向かうにつれて拡がる略台形状の貫通孔となっている。なお、開口部４２の大きさについて特に規定はないが、放熱効果の保持及びヒートスプレッダ４０の強度等の側面からできるだけ小さく形成されていることが好ましい。本実施の形態では、後述するワイヤボンディング工程で、インナリード３１の先端部３３におけるワイヤ５０との接合位置（ワイヤ接合部３４）及び当該ワイヤ接合部３４より外側のインナリード３１を上側から押えるインナリード押え治具８０のインナリード３１に当接する位置の双方が開口部４２上に位置するような大きさに形成されている。   Each opening 42 is punched along the extending direction of the inner lead 31 and is a substantially trapezoidal through-hole that expands from the inside to the outside of the heat spreader 40. Although the size of the opening 42 is not particularly specified, it is preferable that the opening 42 be formed as small as possible from the viewpoint of maintaining the heat dissipation effect and the strength of the heat spreader 40. In the present embodiment, in the wire bonding step described later, the inner lead 31 is pressed from the upper side with the wire 50 at the tip portion 33 of the inner lead 31 (wire bonding portion 34) and the inner lead 31 outside the wire bonding portion 34 is pressed from above. The lead pressing jig 80 is formed in such a size that both of the positions that contact the inner lead 31 are positioned on the opening 42.

ワイヤ５０は、例えば金などの金属線からなっている。そして、このワイヤ５０の一方が半導体チップ２０の表面上のパッド２１に接合されると共に他方がインナリード３１の先端部３３に接合されることで、半導体チップ２０のパッド２１とインナリード３１の先端部３３とが電気的に接続されている。   The wire 50 is made of a metal wire such as gold. One of the wires 50 is bonded to the pad 21 on the surface of the semiconductor chip 20 and the other is bonded to the tip 33 of the inner lead 31, so that the pad 21 of the semiconductor chip 20 and the tip of the inner lead 31 are joined. The part 33 is electrically connected.

封止体６０は、例えばエポキシ系、シリコン系などの絶縁性樹脂材料からなっており、この封止体６０により半導体チップ２０、ワイヤ５０及びヒートスプレッダ４０が覆われて封止されている。また、この封止体６０は、その一部がヒートスプレッダ４０の開口部４２にも充填、配置されている。このため、開口部のない一枚板のヒートスプレッダであればヒートスプレッダの上側の封止体と下側の封止体はヒートスプレッダの側面のみで接着するところ、本実施の形態のヒートスプレッダ４０は開口部４２を有しているため、ヒートスプレッダ４０の上側の封止体６１と下側の封止体６２が開口部４２を通してチップ周辺付近でも繋がっており、上下の封止体６１，６２を強固に接着することができる。   The sealing body 60 is made of an insulating resin material such as epoxy or silicon, and the semiconductor chip 20, the wire 50, and the heat spreader 40 are covered and sealed by the sealing body 60. In addition, a part of the sealing body 60 is filled and arranged in the opening 42 of the heat spreader 40. For this reason, in the case of a single-plate heat spreader without an opening, the upper sealing body and the lower sealing body of the heat spreader are bonded only on the side surface of the heat spreader, and the heat spreader 40 of the present embodiment has the opening 42. Therefore, the upper sealing body 61 and the lower sealing body 62 of the heat spreader 40 are connected to each other in the vicinity of the chip through the opening 42, and the upper and lower sealing bodies 61 and 62 are firmly bonded. be able to.

これにより、封止体６０とヒートスプレッダ４０との接着及びインナリード３１とヒートスプレッダ４０との接着が強固になり、封止体６０とヒートスプレッダ４０の剥離及びインナリード３１とヒートスプレッダ４０との剥離を防止することができる。また、ヒートスプレッダ４０の反りを防止することができ、これにより、製品の反りを防止することができる。   Thereby, the adhesion between the sealing body 60 and the heat spreader 40 and the adhesion between the inner lead 31 and the heat spreader 40 become strong, and the peeling between the sealing body 60 and the heat spreader 40 and the peeling between the inner lead 31 and the heat spreader 40 are prevented. be able to. Moreover, the warp of the heat spreader 40 can be prevented, and thereby the warp of the product can be prevented.

これらにより、半導体装置（ＨＱＦＰ）１０の製品不良を少なくして製品の歩留りを向上させることができると共に、製品の品質を向上させることができる。   As a result, product defects of the semiconductor device (HQFP) 10 can be reduced to improve product yield, and product quality can be improved.

以上のように構成されたＨＱＦＰは、半導体チップ２０の回路の各端子から、この半導体チップ２０の表面上のパッド２１、ワイヤ５０、インナリード３１を通じて、このインナリード３１に繋がるアウタリード３５まで電気的に接続された構造となる。   The HQFP configured as described above is electrically connected from each terminal of the circuit of the semiconductor chip 20 to the outer lead 35 connected to the inner lead 31 through the pad 21, the wire 50, and the inner lead 31 on the surface of the semiconductor chip 20. It becomes the structure connected to.

次に、本実施の形態の半導体装置であるＨＱＦＰ１０の製造方法の一例の手順を、図２に示す製造プロセスフロー図及び図３〜図６を用いて説明する。なお、図４及び図５は、本実施の形態の特徴部分を強調するため、リードのピン数を減らして構造を簡略化した図である。   Next, the procedure of an example of the manufacturing method of HQFP10 which is the semiconductor device of this Embodiment is demonstrated using the manufacturing process flowchart shown in FIG. 2, and FIGS. 3-6. 4 and 5 are diagrams in which the structure is simplified by reducing the number of lead pins in order to emphasize the characteristic portions of the present embodiment.

まず、図２に示すステップＳ１のリードフレーム準備工程（フレーム準備工程）を行う。すなわち、図２のステップＳ１、図３及び図４に示すような、裏面にヒートスプレッダ４０が接着された状態のリードフレーム３０を準備する。このリードフレーム３０は、例えば銅などのプレス加工フレーム（エッチング加工フレームでも良い）からなり、複数のインナリード３１及びこれに繋がる複数のアウタリード３５を有している。   First, the lead frame preparation process (frame preparation process) of step S1 shown in FIG. 2 is performed. That is, the lead frame 30 in a state where the heat spreader 40 is bonded to the back surface as shown in step S1, FIG. 3, and FIG. 4 of FIG. 2 is prepared. The lead frame 30 is made of, for example, a press processing frame (such as an etching processing frame) such as copper, and includes a plurality of inner leads 31 and a plurality of outer leads 35 connected thereto.

また、ヒートスプレッダ４０は、例えば銅などの薄板からなり、リードフレーム３０のインナリード３１の裏面３１ａの所定範囲に接着され、半導体チップ２０の発熱がヒートスプレッダ４０からインナリード３１及びアウタリード３５を通じて実装基板に放熱されるようになっている。本実施の形態のヒートスプレッダ４０は、図４に示すように、リードフレーム３０における半導体チップ２０のチップ搭載領域３２を中心として各インナリード３１の延在方向の長さの２／３程度までの範囲を覆う略方形状の薄板からなっている。また、当該ヒートスプレッダ４０の表面４０ａには、全体に絶縁性の接着剤が塗布されて接着剤層４１となっており、この接着剤層４１を介してヒートスプレッダ４０がリードフレーム３０のインナリード３１の裏面３１ａに接着されている。   The heat spreader 40 is made of, for example, a thin plate such as copper, and is adhered to a predetermined range of the back surface 31a of the inner lead 31 of the lead frame 30. Heat is dissipated. As shown in FIG. 4, the heat spreader 40 of the present embodiment has a range up to about 2/3 of the length in the extending direction of each inner lead 31 around the chip mounting region 32 of the semiconductor chip 20 in the lead frame 30. It consists of a substantially rectangular thin plate that covers. In addition, an insulating adhesive is applied to the entire surface 40 a of the heat spreader 40 to form an adhesive layer 41, and the heat spreader 40 is connected to the inner leads 31 of the lead frame 30 through the adhesive layer 41. Bonded to the back surface 31a.

また、ヒートスプレッダ４０には、その表面４０ａから裏面４０ｂに貫通した開口部４２を備えている。当該開口部４２は、インナリード３１における先端部３３のワイヤ接合部３４と反対側の裏面３１ａを露出させ、かつヒートスプレッダ４０の表面４０ａから裏面４０ｂまで貫通する貫通孔である。また、本実施の形態のヒートスプレッダ４０は、複数の開口部４２を備えている。具体的には、図３〜図５に示すように、ヒートスプレッダ４０において、全てのインナリード３１における先端部３３のワイヤ接合部３４と反対側の裏面３１ａが抜き加工によって形成される開口部４２に露出するように、チップ搭載領域３２を囲む４箇所、すなわち、搭載される方形状の半導体チップ２０の上面からみた４辺に沿った４箇所にそれぞれ開口部４２を備えている。それぞれの開口部４２は、インナリード３１の延在方向に沿って抜き加工されており、ヒートスプレッダ４０の内側から外側に向かうにつれて拡がる略台形状の貫通孔となっている。   The heat spreader 40 includes an opening 42 that penetrates from the front surface 40a to the back surface 40b. The opening 42 is a through hole that exposes the back surface 31 a of the inner lead 31 on the side opposite to the wire bonding portion 34 of the tip 33 and penetrates from the front surface 40 a to the back surface 40 b of the heat spreader 40. The heat spreader 40 according to the present embodiment includes a plurality of openings 42. Specifically, as shown in FIGS. 3 to 5, in the heat spreader 40, the back surface 31 a opposite to the wire bonding portion 34 of the tip portion 33 of all the inner leads 31 is formed in the opening 42 formed by punching. In order to be exposed, openings 42 are respectively provided at four locations surrounding the chip mounting region 32, that is, at four locations along the four sides viewed from the upper surface of the mounted rectangular semiconductor chip 20. Each opening 42 is punched along the extending direction of the inner lead 31 and is a substantially trapezoidal through-hole that expands from the inside to the outside of the heat spreader 40.

また、その他、ＨＱＦＰ１０の組み立てに必要な、半導体チップ２０、金などの金属線からなるワイヤ５０、封止体６０となるエポキシ系、シリコン系などの絶縁性樹脂材料などを準備する。半導体チップ２０は、シリコン基板上に形成されたＡＳＩＣ（Ａｐｐｌｉｃａｔｉｏｎ Ｓｐｅｃｉｆｉｃ Ｉｎｔｅｇｒａｔｅｄ Ｃｉｒｃｕｉｔ）やマイクロコンピュータなどを有し、この表面上にアルミニウムなどのパッド２１が設けられ、内部に形成されたＡＳＩＣやマイクロコンピュータなどの所定の回路の各端子から表面上のパッド２１まで電気的に接続されたものである。また、半導体チップ２０は、ウェハの前工程において、酸化・拡散・不純物導入、配線パターン形成、絶縁層形成、配線層形成などのウエハ処理工程を繰り返して所望の回路が形成され、このウェハを切断してチップ毎に個別に切り離されたものである。   In addition, the semiconductor chip 20, a wire 50 made of a metal wire such as gold, an epoxy resin, a silicon resin, or the like necessary for the assembly of the HQFP 10 are prepared. The semiconductor chip 20 has an ASIC (Application Specific Integrated Circuit) formed on a silicon substrate, a microcomputer, etc., and a pad 21 such as aluminum is provided on this surface, and an ASIC, microcomputer, etc. formed inside the semiconductor chip 20. These are electrically connected from each terminal of the predetermined circuit to the pad 21 on the surface. In the semiconductor chip 20, a desired circuit is formed by repeating wafer processing steps such as oxidation / diffusion / impurity introduction, wiring pattern formation, insulation layer formation, and wiring layer formation in the previous process of the wafer, and this wafer is cut. Thus, each chip is separated individually.

次に、図２に示すステップＳ２の半導体チップ搭載工程（ダイボンディング工程）を行う。図２のステップＳ２、図３及び図４に示すように、リードフレーム３０の略中央にはチップ搭載領域３２が設けられている。このチップ搭載領域３２には、リードフレーム３０のインナリード３１の裏面３１ａに接着されたヒートスプレッダ４０の表面４０ａの接着剤層４１が露出しており、当該ヒートスプレッダ４０の表面４０ａ上に、半導体チップ２０を銀ペースト２２（又は半田ペースト等）及び接着剤層４１を介して接着して搭載する。   Next, the semiconductor chip mounting step (die bonding step) in step S2 shown in FIG. 2 is performed. As shown in step S <b> 2 of FIG. 2, FIG. 3, and FIG. 4, a chip mounting region 32 is provided in the approximate center of the lead frame 30. In the chip mounting area 32, the adhesive layer 41 of the surface 40 a of the heat spreader 40 bonded to the back surface 31 a of the inner lead 31 of the lead frame 30 is exposed, and the semiconductor chip 20 is formed on the surface 40 a of the heat spreader 40. Are bonded and mounted via the silver paste 22 (or solder paste or the like) and the adhesive layer 41.

次に、図２に示すステップＳ３の半導体チップとインナリードとを電気的に接続する工程（ワイヤボンディング工程）を行う。すなわち、図５及び図６に示すように、半導体チップ２０の各パッド２１とリードフレーム３０の各インナリード３１の先端部３３とをそれぞれワイヤ５０により接続する。   Next, a step (wire bonding step) of electrically connecting the semiconductor chip and the inner lead in step S3 shown in FIG. 2 is performed. That is, as shown in FIGS. 5 and 6, the pads 21 of the semiconductor chip 20 and the tip portions 33 of the inner leads 31 of the lead frame 30 are connected by the wires 50.

以下、本実施の形態におけるワイヤボンディング工程について詳述する。まず、図６に示すように、ワイヤボンダ（ワイヤボンディング装置：図示省略）のヒートステージ７０上に、半導体チップ２０が搭載されたリードフレーム３０を、ヒートスプレッダ４０が下側になるように配置する。ここで、ヒートステージ７０におけるヒートスプレッダ４０の開口部４２が位置する箇所には、当該開口部４２の形状に合わせた突出部７１が設けられている。本実施の形態のヒートステージ７０の突出部７１は、略台形状の開口部４２に対応するように、開口部４２に挿入できる程度の大きさの略台形状に形成されている。これにより、開口部４２上のインナリード３１の先端部３３がヒートステージ７０の突出部７１に直接接触した状態で、インナリード３１の先端部３３とワイヤ５０との接合を行うことができるようになっている。   Hereinafter, the wire bonding process in the present embodiment will be described in detail. First, as shown in FIG. 6, the lead frame 30 on which the semiconductor chip 20 is mounted is arranged on the heat stage 70 of a wire bonder (wire bonding apparatus: not shown) so that the heat spreader 40 is on the lower side. Here, in the heat stage 70, a position where the opening 42 of the heat spreader 40 is located is provided with a protrusion 71 that matches the shape of the opening 42. The protrusion 71 of the heat stage 70 of the present embodiment is formed in a substantially trapezoidal shape that is large enough to be inserted into the opening 42 so as to correspond to the substantially trapezoidal opening 42. Accordingly, the tip portion 33 of the inner lead 31 and the wire 50 can be joined in a state where the tip portion 33 of the inner lead 31 on the opening 42 is in direct contact with the protruding portion 71 of the heat stage 70. It has become.

また、ヒートステージ７０の突出部７１のヒートスプレッダ４０の厚み方向への突出量は、ヒートステージ７０に配置した接着剤層４１を含むヒートスプレッダ４０の厚さと同じかそれ以下に設定されている。このようにすることで、ワイヤ５０を接合するインナリード３１の先端部３３のワイヤ接合部３４を有する接合面（インナリード３１の表面）が真上若しくは少し半導体チップ２０側を向くようになる。これは、ワイヤ５０をインナリード３１の先端部３３に接合する際に、インナリード３１におけるワイヤ５０の接合面が真上を向いているか少し半導体チップ２０側を向いている方がワイヤの接着性が良いためである。   Further, the protrusion amount of the protrusion 71 of the heat stage 70 in the thickness direction of the heat spreader 40 is set to be equal to or less than the thickness of the heat spreader 40 including the adhesive layer 41 disposed on the heat stage 70. By doing so, the bonding surface (the surface of the inner lead 31) having the wire bonding portion 34 of the distal end portion 33 of the inner lead 31 to which the wire 50 is bonded is directed directly above or slightly toward the semiconductor chip 20 side. This is because when the wire 50 is joined to the tip portion 33 of the inner lead 31, the bonding property of the wire is better when the joining surface of the inner lead 31 faces directly above or slightly faces the semiconductor chip 20 side. Because it is good.

また、本実施の形態のワイヤボンダは、ヒートステージ７０の突出部７１における外側部分に当接するような位置に配置されたインナリード押え治具８０を備えている。そして、このインナリード押え治具８０が、ヒートスプレッダ４０の開口部４２上のインナリード３１の先端部３３におけるワイヤ５０との接合位置（ワイヤ接合部３４）より外側のインナリード３１を上側からヒートステージ７０の突出部７１に押し付けることで、当該インナリード押え治具８０とヒートステージ７０の突出部７１とでインナリード３１を上下から挟持するようになっている。   In addition, the wire bonder of the present embodiment includes an inner lead holding jig 80 that is disposed at a position that comes into contact with the outer portion of the protruding portion 71 of the heat stage 70. Then, the inner lead holding jig 80 heats the inner lead 31 outside the bonding position (wire bonding portion 34) with the wire 50 at the tip 33 of the inner lead 31 on the opening 42 of the heat spreader 40 from above. The inner lead 31 is sandwiched from above and below by the inner lead pressing jig 80 and the protruding portion 71 of the heat stage 70 by being pressed against the protruding portion 71 of the 70.

なお、ヒートステージ７０の突出部７１の突出量がヒートステージ７０に配置した接着剤層４１を含むヒートスプレッダ４０の厚さより低く、そのままではインナリード３１における先端部３３のワイヤ接合部３４の裏面３１ａが突出部７１に接触しないような場合でも、インナリード押え治具８０でインナリード３１を上側から押えることにより、インナリード３１の裏面３１ａを突出部７１に接触させることができる。また、本実施の形態のインナリード押え治具８０は、平面視円弧状の部材で構成されているが、これに限るものではなく、平面視四角形状のインナリード押え治具や、各突出部７１で独立したインナリード押え治具など、適宜のインナリード押え治具を用いれば良い。   Note that the protrusion amount of the protrusion 71 of the heat stage 70 is lower than the thickness of the heat spreader 40 including the adhesive layer 41 disposed on the heat stage 70, and the back surface 31 a of the wire bonding portion 34 of the tip 33 of the inner lead 31 is left as it is. Even in the case where the protrusion 71 is not contacted, the inner lead 31 can be pressed from above with the inner lead holding jig 80 so that the back surface 31 a of the inner lead 31 can be brought into contact with the protrusion 71. Further, the inner lead presser jig 80 of the present embodiment is configured by a member having an arc shape in plan view, but is not limited to this, and the inner lead presser jig having a square shape in plan view and each protrusion An appropriate inner lead holding jig such as an inner lead holding jig 71 may be used.

このような状態のリードフレーム３０及びヒートステージ７０を用いて、ワイヤボンディングを行う。ワイヤボンディングでは、まず、ワイヤボンダのキャピラリ（図示省略）により、ワイヤ５０を半導体チップ２０のパッド２１に接合する。次に、キャピラリを移動させ、半導体チップ２０に接合したワイヤ５０を、前記したようにヒートステージ７０の突出部７１に直接接触した状態のリードフレーム３０のインナリード３１の先端部３３のワイヤ接合部３４に接合する。このような手順で、半導体チップ２０のパッド２１とインナリード３１の先端部３３とを電気的に接続する。   Wire bonding is performed using the lead frame 30 and the heat stage 70 in such a state. In wire bonding, first, the wire 50 is bonded to the pad 21 of the semiconductor chip 20 by a capillary (not shown) of a wire bonder. Next, the capillary 50 is moved, and the wire 50 bonded to the semiconductor chip 20 is connected to the wire bonding portion of the distal end portion 33 of the inner lead 31 of the lead frame 30 in a state of directly contacting the protruding portion 71 of the heat stage 70 as described above. 34. By such a procedure, the pad 21 of the semiconductor chip 20 and the tip portion 33 of the inner lead 31 are electrically connected.

次に、図２に示すステップＳ４の封止工程を行う。すなわち、半導体チップ２０、ワイヤ５０及びヒートスプレッダ４０を封止体６０で覆って封止する。このとき、封止体６０はヒートスプレッダ４０の開口部４２にも充填、配置される。これにより、ヒートスプレッダ４０の上側の封止体６１と下側の封止体６２が、ヒートスプレッダ４０の側面のみでなく、開口部４２を通してチップ周辺付近でも繋がり、上下の封止体６１，６２を強固に接着することができる。   Next, the sealing process of step S4 shown in FIG. 2 is performed. That is, the semiconductor chip 20, the wire 50, and the heat spreader 40 are covered with the sealing body 60 and sealed. At this time, the sealing body 60 is also filled and arranged in the opening 42 of the heat spreader 40. Thereby, the upper sealing body 61 and the lower sealing body 62 of the heat spreader 40 are connected not only on the side surface of the heat spreader 40 but also in the vicinity of the chip through the opening 42, and the upper and lower sealing bodies 61 and 62 are firmly connected. Can be glued to.

次に、図２に示すステップＳ５の切断・成形工程（成形工程）を行う。すなわち、封止体６０から突出したリードフレーム３０のアウタリード３５を所定の長さを残して切断し、このアウタリード３５をガルウイング状に成形して外部端子とする。これにより、ＨＱＦＰ構造の半導体装置１０が完成する。   Next, the cutting / molding process (molding process) in step S5 shown in FIG. 2 is performed. That is, the outer lead 35 of the lead frame 30 protruding from the sealing body 60 is cut leaving a predetermined length, and the outer lead 35 is formed into a gull wing shape to serve as an external terminal. Thereby, the semiconductor device 10 having the HQFP structure is completed.

本実施の形態の半導体装置（ＨＱＦＰ）１０の製造方法によれば、半導体チップ２０とインナリード３１とをワイヤ５０で接続する際に、リードフレーム３０のインナリード３１の裏面３１ａに接着されたヒートスプレッダ４０の開口部４２に、ヒートステージ７０に設けられた突出部７１を配置する。そして、インナリード３１の先端部３３がヒートステージ７０の突出部７１に直接接触した状態で、インナリード３１の先端部３３とワイヤ５０との接合を行う。このため、確実にワイヤ５０をインナリード３１に接合させることができる。   According to the manufacturing method of the semiconductor device (HQFP) 10 of the present embodiment, when the semiconductor chip 20 and the inner lead 31 are connected by the wire 50, the heat spreader bonded to the back surface 31a of the inner lead 31 of the lead frame 30. A protrusion 71 provided on the heat stage 70 is disposed in the opening 42 of the 40. Then, the tip portion 33 of the inner lead 31 and the wire 50 are joined in a state where the tip portion 33 of the inner lead 31 is in direct contact with the protruding portion 71 of the heat stage 70. For this reason, the wire 50 can be reliably joined to the inner lead 31.

すなわち、ワイヤ５０と接合するインナリード３１の先端部３３が、弾力のない安定したヒートステージ７０に直接接触していることで、キャピラリから発せられた超音波を有効に伝達させることができるため、インナリード３１に対するワイヤ５０の接合強度を強くすることができる。これにより、インナリード３１とワイヤ５０との接合不良を解消して良好な接合状態を実現でき、半導体装置１０の組立を良好に行うことができるのである。したがって、製品の歩留りを向上させることができると共に、製品の品質を向上させることができる。   That is, since the tip 33 of the inner lead 31 joined to the wire 50 is in direct contact with the stable heat stage 70 without elasticity, the ultrasonic waves emitted from the capillary can be effectively transmitted. The bonding strength of the wire 50 to the inner lead 31 can be increased. As a result, the bonding failure between the inner lead 31 and the wire 50 can be eliminated and a good bonding state can be realized, and the semiconductor device 10 can be assembled satisfactorily. Therefore, the yield of the product can be improved and the quality of the product can be improved.

また、本実施の形態では、インナリード押え治具８０でインナリード３１を上側から押えることで、当該インナリード押え治具８０とヒートステージ７０の突出部７１とでインナリード３１を上下から挟持するようになっている。これにより、インナリード３１をしっかりと固定することができ、さらに安定したワイヤ５０の接合を行うことができる。   In the present embodiment, the inner lead 31 is clamped from above by the inner lead pressing jig 80 and the protrusion 71 of the heat stage 70 by pressing the inner lead 31 from above with the inner lead pressing jig 80. It is like that. Thereby, the inner lead 31 can be firmly fixed, and the wire 50 can be further stably joined.

以上、本発明者によってなされた発明を発明の実施の形態に基づき具体的に説明したが、本発明は前記発明の実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることは言うまでもない。   As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

例えば、前記実施の形態においては、ＨＱＦＰを例に説明したが、本発明は、ヒートスプレッダ付きのＳＯＰ（Ｓｍａｌｌ Ｏｕｔｌｉｎｅ Ｐａｃｋａｇｅ）、ＳＯＪ（Ｓｍａｌｌ Ｏｕｔｌｉｎｅ Ｊ−ｌｅａｄｅｄ ｐａｃｋａｇｅ）、ＱＦＮ（Ｑｕａｄ Ｆｌａｔ Ｎｏｎ−ｌｅａｄｅｄ ｐａｃｋａｇｅ）などのプラスチックモールドパッケージ全般に広く適用可能である。   For example, in the above-described embodiment, the HQFP has been described as an example. It is widely applicable to plastic mold packages in general.

また、前記実施の形態では、ヒートスプレッダの開口部が４箇所に形成されているが、これに限るものではなく、インナリードの配置条件等に合わせて、１〜３箇所又は５箇所以上に形成されていても良い。   Moreover, in the said embodiment, although the opening part of a heat spreader is formed in four places, it is not restricted to this, It is formed in 1-3 places or 5 places or more according to the arrangement conditions etc. of an inner lead. May be.

また、前記実施の形態では、ヒートスプレッダの開口部は略台形状に形成されているが、これに限るものではなく、インナリードの配置条件等に合わせて、方形状や多角形状、曲線を有する形状等の他の形状に形成されていても良い。   Moreover, in the said embodiment, although the opening part of the heat spreader is formed in the substantially trapezoid shape, it is not restricted to this, The shape which has square shape, polygonal shape, and a curve according to the inner lead arrangement conditions etc. It may be formed in other shapes.

本発明は、ヒートスプレッダが接着されたリードフレームを用いた半導体装置の製造技術に好適である。   The present invention is suitable for a manufacturing technique of a semiconductor device using a lead frame to which a heat spreader is bonded.

本発明の実施の形態の半導体装置（ＨＱＦＰ）の構造の一例を示す断面図である。It is sectional drawing which shows an example of the structure of the semiconductor device (HQFP) of embodiment of this invention. 図１に示す半導体装置の組み立て手順の一例を示す製造プロセスフロー図である。FIG. 2 is a manufacturing process flow diagram illustrating an example of an assembly procedure of the semiconductor device illustrated in FIG. 1. 図２のフレーム準備工程におけるリードフレームの構造の一例を示す平面図である。FIG. 3 is a plan view showing an example of a lead frame structure in the frame preparation step of FIG. 2. 図２のフレーム準備工程におけるリードフレームの構造の一例を簡略化して示す平面図である。FIG. 3 is a plan view schematically showing an example of a lead frame structure in the frame preparation step of FIG. 2. 図２のワイヤボンディング工程におけるリードフレーム等の構造の一例を簡略化して示す平面図である。FIG. 3 is a plan view schematically showing an example of a structure such as a lead frame in the wire bonding step of FIG. 2. 図５に示すリードフレーム等におけるＡ−Ａ線に沿って切断した構造を示す断面図である。It is sectional drawing which shows the structure cut | disconnected along the AA line in the lead frame etc. which are shown in FIG. 比較例のワイヤボンディング工程におけるリードフレーム等の構造の一例を示す平面図である。It is a top view which shows an example of structures, such as a lead frame, in the wire bonding process of a comparative example. 図７に示すリードフレーム等におけるＢ−Ｂ線に沿って切断した構造を示す断面図である。FIG. 8 is a cross-sectional view showing a structure cut along the line BB in the lead frame or the like shown in FIG. 7. 図８に示すリードフレーム等におけるＣ部を拡大した部分断面図である。FIG. 9 is an enlarged partial cross-sectional view of a portion C in the lead frame or the like shown in FIG.

符号の説明Explanation of symbols

１０ ＨＱＦＰ（半導体装置）
２０ 半導体チップ
２１ パッド（電極）
２２ 銀ペースト
３０ リードフレーム
３１ インナリード
３１ａ インナリードの裏面
３２ チップ搭載領域
３３ 先端部
３４ ワイヤ接合部
３５ アウタリード（外部端子）
４０ ヒートスプレッダ
４０ａ ヒートスプレッダの表面
４０ｂ ヒートスプレッダの裏面
４１ 接着剤層
４２ 開口部
５０ ワイヤ
６０ 封止体
６１ 上側封止体
６２ 下側封止体
７０ ヒートステージ
７１ 突出部
８０ インナリード押え治具
１３０ 比較例のリードフレーム
１４０ 比較例のヒートスプレッダ
１４１ 比較例の接着剤層
１７０ 比較例のヒートステージ
Ｂ ボイド 10 HQFP (semiconductor device)
20 Semiconductor chip 21 Pad (electrode)
22 Silver paste 30 Lead frame 31 Inner lead 31a Back surface of inner lead 32 Chip mounting area 33 Tip portion 34 Wire joint portion 35 Outer lead (external terminal)
40 Heat Spreader 40a Heat Spreader Front 40b Heat Spreader Back 41 Adhesive Layer 42 Opening 50 Wire 60 Sealing Body 61 Upper Sealing Body 62 Lower Sealing Body 70 Heat Stage 71 Projection 80 Inner Lead Pressing Tool 130 Comparative Example Lead frame 140 Comparative heat spreader 141 Comparative adhesive layer 170 Comparative heat stage B Void

Claims (5)

（ａ）複数のインナリード及びアウタリードを有し、前記複数のインナリードの裏面に絶縁性の接着剤層を介してヒートスプレッダが接着されたリードフレームを準備する工程と、
（ｂ）前記ヒートスプレッダの表面上に半導体チップを搭載する工程と、
（ｃ）前記半導体チップの電極と前記リードフレームのインナリードの先端部とをワイヤにより電気的に接続する工程とを有し、
前記（ａ）工程において準備する前記リードフレームに接着された前記ヒートスプレッダは、前記各インナリードの先端部のワイヤ接合部と反対側の裏面を露出させるように貫通した開口部を備えており、
前記（ｃ）工程において、前記インナリードの先端部と前記ワイヤとを接合する際に、前記ヒートスプレッダが下側になるようにして前記リードフレームを配置するヒートステージにおける前記ヒートスプレッダの開口部が位置する箇所には、当該開口部の形状に合わせた突出部が設けられており、前記インナリードの先端部のワイヤ接合部の裏面が前記ヒートステージの突出部に直接接触した状態で、前記インナリードの先端部と前記ワイヤとの接合を行うことを特徴とする半導体装置の製造方法。 (A) preparing a lead frame having a plurality of inner leads and an outer lead, wherein a heat spreader is bonded to the back surface of the plurality of inner leads via an insulating adhesive layer;
(B) mounting a semiconductor chip on the surface of the heat spreader;
(C) electrically connecting the electrode of the semiconductor chip and the tip of the inner lead of the lead frame with a wire;
The heat spreader bonded to the lead frame prepared in the step (a) includes an opening penetrating so as to expose the back surface opposite to the wire bonding portion of the tip portion of each inner lead,
In the step (c), when the tip of the inner lead and the wire are joined, the opening of the heat spreader in the heat stage in which the lead frame is arranged so that the heat spreader is on the lower side is positioned. The location is provided with a protrusion that matches the shape of the opening, and the back surface of the wire joint at the tip of the inner lead is in direct contact with the protrusion of the heat stage. A method of manufacturing a semiconductor device, comprising joining a tip portion and the wire. 請求項１記載の半導体装置の製造方法において、前記（ｃ）工程で、前記ヒートスプレッダの開口部上の前記インナリードの先端部における前記ワイヤ接合部より外側の位置に前記インナリードを上側から押えるインナリード押え治具を配置し、当該インナリード押え治具と前記ヒートステージとで前記インナリードを上下から挟持して、前記インナリードの先端部と前記ワイヤとを接合することを特徴とする半導体装置の製造方法。   2. The method of manufacturing a semiconductor device according to claim 1, wherein, in the step (c), the inner lead is pressed from the upper side at a position outside the wire bonding portion at the tip of the inner lead on the opening of the heat spreader. A semiconductor device characterized in that a lead holding jig is disposed, the inner lead is sandwiched from above and below by the inner lead holding jig and the heat stage, and the tip of the inner lead and the wire are joined. Manufacturing method. 請求項２記載の半導体装置の製造方法において、前記（ｃ）工程における前記ヒートステージの突出部の突出量が、前記接着剤層を含む前記ヒートスプレッダの厚さと同じかそれ以下であることを特徴とする半導体装置の製造方法。   3. The method of manufacturing a semiconductor device according to claim 2, wherein a protruding amount of the protruding portion of the heat stage in the step (c) is equal to or less than a thickness of the heat spreader including the adhesive layer. A method for manufacturing a semiconductor device. 請求項１記載の半導体装置の製造方法において、前記ヒートスプレッダは前記開口部を複数備えていることを特徴とする半導体装置の製造方法。   2. The method of manufacturing a semiconductor device according to claim 1, wherein the heat spreader includes a plurality of the openings. 所定の回路が形成された半導体チップと、
前記半導体チップの周囲に配置された複数のインナリードと、
前記複数のインナリードの裏面に絶縁性の接着剤層を介して接着されたヒートスプレッダと、
前記半導体チップの電極と前記インナリードの先端部とを電気的に接続するワイヤと、
前記半導体チップ、前記ワイヤ及び前記ヒートスプレッダを封止する封止体と、
前記封止体から外方に露出する複数のアウタリードとを有し、
前記ヒートスプレッダは、前記各インナリードの先端部のワイヤ接合部と反対側の裏面を露出させるように貫通した開口部を備え、
前記開口部に前記封止体の一部が配置されていることを特徴とする半導体装置。 A semiconductor chip on which a predetermined circuit is formed;
A plurality of inner leads arranged around the semiconductor chip;
A heat spreader bonded to the back surface of the plurality of inner leads via an insulating adhesive layer;
A wire for electrically connecting the electrode of the semiconductor chip and the tip of the inner lead;
A sealing body for sealing the semiconductor chip, the wire, and the heat spreader;
A plurality of outer leads exposed outward from the sealing body;
The heat spreader includes an opening penetrating so as to expose the back surface opposite to the wire bonding portion of the tip portion of each inner lead,
A part of the sealing body is disposed in the opening.
JP2007054004A 2007-03-05 2007-03-05 Semiconductor device and its production process Pending JP2008218703A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015152432A1 (en) * 2014-03-31 2015-10-08 대우전자부품(주) Printed circuit board wire bonding method and printed circuit board wire bonding structure formed by same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015152432A1 (en) * 2014-03-31 2015-10-08 대우전자부품(주) Printed circuit board wire bonding method and printed circuit board wire bonding structure formed by same

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