JP5594820B2 - 均一な常圧プラズマ発生装置 - Google Patents
均一な常圧プラズマ発生装置 Download PDFInfo
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- JP5594820B2 JP5594820B2 JP2009548157A JP2009548157A JP5594820B2 JP 5594820 B2 JP5594820 B2 JP 5594820B2 JP 2009548157 A JP2009548157 A JP 2009548157A JP 2009548157 A JP2009548157 A JP 2009548157A JP 5594820 B2 JP5594820 B2 JP 5594820B2
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- 239000007789 gas Substances 0.000 claims description 156
- 239000012212 insulator Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Description
Claims (12)
- 被処理物に対向配置され、電源が印加される電源プレートを含む第1電極と、
前記第1電極の長手方向に沿って、前記第1電極の前記被処理物との対向面に離隔して配されて放電空間を形成する第2電極と、
前記放電空間にガスを供給するガス供給通路が形成されており、前記第1電極及び前記第2電極を支持するガス供給部材とを備え
前記第1電極は、前記電源プレートを含む電源印加電極と、前記長手方向に沿って前記電源印加電極の底面と連結される少なくとも一つ以上のプラズマ発生電極とを備え、
前記電源印加電極との連結部分を除いた、前記プラズマ発生電極を取り囲む誘電体をさらに備え、
前記電源プレートの幅は、前記プラズマ発生電極の幅より大きく、前記電源印加電極の底面の幅は、前記プラズマ発生電極の上面の幅より小さく、前記プラズマ発生電極は、その上面が、前記電源印加電極の底面全体と当接するように形成され、
前記ガス供給部材のうち、前記誘電体と隣接する部分が絶縁体で形成されており、
前記ガス供給通路は、外部からガスが流入されるガス流入路と、前記ガス流入路と連結され、前記長手方向に連通されるように形成されたバッファ空間と、前記バッファ空間と離隔して形成され、前記長手方向に沿って前記放電空間と連通されるように形成された混合空間と、前記バッファ空間から前記混合空間に向けて水平方向に形成された複数のオリフィスとを含み、
前記ガス流入路は、前記ガス供給部材の上面に複数個形成され、前記バッファ空間は、仕切りによって複数のサブバッファ空間に区分され、前記複数のサブバッファ空間は前記複数個のガス流入路にそれぞれ対応し、前記仕切りを介して隣接したサブバッファ空間は、前記ガスが互いに交換されないように独立的であり、複数個の前記オリフィスを備えるプラズマ発生装置。 - 前記プラズマ発生電極を前記ガス供給部材に固定させるための固定手段をさらに備える請求項1に記載のプラズマ発生装置。
- 前記電源プレートは、前記第1電極の温度を調節するための温度調節手段を備える請求項1に記載のプラズマ発生装置。
- 前記温度調節手段は、前記電源プレートの内部を貫通して設けられた温度調節通路である請求項3に記載のプラズマ発生装置。
- 前記温度調節通路は、前記電源プレートの内部をジグザグに方向を偏向しながら貫通して設けられている請求項4に記載のプラズマ発生装置。
- 前記電源プレートは、前記一つ以上のプラズマ発生電極の間にガスを供給するためのガス供給通路を含む請求項1に記載のプラズマ発生装置。
- 前記ガス供給部材は、絶縁体である請求項1に記載のプラズマ発生装置。
- 前記電源の周波数は、400khz〜60Mhzである請求項1に記載のプラズマ発生装置。
- 前記ガスは、非活性ガスが50%以上であり、前記非活性ガスは、アルゴン、ヘリウム、ネオンまたはこれらの混合ガスである請求項1に記載のプラズマ発生装置。
- 前記第1電極と対向するように配置され、前記被処理物が置かれる第3電極をさらに備え、前記第3電極は、接地と連結されない請求項1に記載のプラズマ発生装置。
- 前記第3電極と前記被処理物との間に誘電体をさらに備える請求項10に記載のプラズマ発生装置。
- 前記第1電極と対向するように配置され、前記被処理物が置かれる第3電極をさらに備え、前記第3電極にパルス電源または直流電源を印加する請求項1に記載のプラズマ発生装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070011149 | 2007-02-02 | ||
KR10-2007-0011149 | 2007-02-02 | ||
KR1020080010285A KR100872682B1 (ko) | 2007-02-02 | 2008-01-31 | 균일한 상압 플라즈마 발생장치 |
KR10-2008-0010285 | 2008-01-31 | ||
PCT/KR2008/000617 WO2008094009A1 (en) | 2007-02-02 | 2008-02-01 | Apparatus for uniformly generating atmospheric pressure plasma |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010518555A JP2010518555A (ja) | 2010-05-27 |
JP5594820B2 true JP5594820B2 (ja) | 2014-09-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009548157A Active JP5594820B2 (ja) | 2007-02-02 | 2008-02-01 | 均一な常圧プラズマ発生装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8373088B2 (ja) |
JP (1) | JP5594820B2 (ja) |
KR (1) | KR100872682B1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101056097B1 (ko) * | 2009-03-25 | 2011-08-10 | 박종훈 | 대기압 플라즈마 발생장치 |
KR101230114B1 (ko) | 2011-01-31 | 2013-02-05 | 박종헌 | 복수개의 전극을 갖는 상압 플라즈마 장치 |
CN102802336A (zh) * | 2011-05-26 | 2012-11-28 | 株式会社Biemt | 工程气体分离供给型大气压等离子装置及其使用方法 |
TWI486996B (zh) | 2013-12-04 | 2015-06-01 | Ind Tech Res Inst | 電漿裝置及電漿裝置的操作方法 |
TWI548310B (zh) | 2014-11-21 | 2016-09-01 | 財團法人工業技術研究院 | 電漿處理之模組化電極裝置 |
KR101804561B1 (ko) * | 2016-03-24 | 2017-12-06 | 주식회사 플라즈맵 | 높은 공간 선택성을 가지는 선형 플라즈마 발생 장치 |
US11478746B2 (en) | 2018-07-17 | 2022-10-25 | Transient Plasma Systems, Inc. | Method and system for treating emissions using a transient pulsed plasma |
US11629860B2 (en) | 2018-07-17 | 2023-04-18 | Transient Plasma Systems, Inc. | Method and system for treating emissions using a transient pulsed plasma |
EP3966845A4 (en) * | 2019-05-07 | 2023-01-25 | Transient Plasma Systems, Inc. | NON-THERMAL PULSED ATMOSPHERIC PRESSURE PLASMA TREATMENT SYSTEM |
US11811199B2 (en) | 2021-03-03 | 2023-11-07 | Transient Plasma Systems, Inc. | Apparatus and methods of detecting transient discharge modes and/or closed loop control of pulsed systems and method employing same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2749630B2 (ja) * | 1989-04-24 | 1998-05-13 | 住友電気工業株式会社 | プラズマ表面処理法 |
JP2820283B2 (ja) * | 1989-09-12 | 1998-11-05 | 株式会社山東鉄工所 | 低温プラズマ発生用極板の製法 |
JP2934852B1 (ja) * | 1998-03-23 | 1999-08-16 | 科学技術振興事業団 | プラズマ処理装置 |
JP3555470B2 (ja) * | 1998-12-04 | 2004-08-18 | セイコーエプソン株式会社 | 大気圧高周波プラズマによるエッチング方法 |
JP3399887B2 (ja) * | 1999-09-22 | 2003-04-21 | パール工業株式会社 | プラズマ処理装置 |
JP4212210B2 (ja) * | 1999-12-07 | 2009-01-21 | 株式会社小松製作所 | 表面処理装置 |
JP2002018276A (ja) * | 2000-07-10 | 2002-01-22 | Pearl Kogyo Kk | 大気圧プラズマ処理装置 |
JP2002158219A (ja) * | 2000-09-06 | 2002-05-31 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及びそれを用いた処理方法 |
US6521859B2 (en) * | 2000-12-12 | 2003-02-18 | Nytrox 1, Inc. | System and method for preserving stored foods |
JP3962280B2 (ja) * | 2002-05-21 | 2007-08-22 | 積水化学工業株式会社 | 放電プラズマ処理装置 |
KR100488359B1 (ko) * | 2002-06-14 | 2005-05-11 | 주식회사 플라즈마트 | 대기압 저온 평판형 벌크 플라즈마 발생장치 |
JP2004076076A (ja) * | 2002-08-14 | 2004-03-11 | Konica Minolta Holdings Inc | 大気圧プラズマ処理装置及び大気圧プラズマ処理方法 |
EP1609884B1 (en) * | 2003-03-31 | 2013-08-28 | Konica Minolta Holdings, Inc. | Thin film forming apparatus and method for forming thin film |
KR100572848B1 (ko) * | 2004-01-30 | 2006-04-24 | (주)창조엔지니어링 | 이그나이터가 구비된 대기압 플라즈마 발생장치 |
JP2006286730A (ja) | 2005-03-31 | 2006-10-19 | Nippon Spindle Mfg Co Ltd | フレキシブルプリント基板のプラズマ処理方法及びその装置 |
RU2278328C1 (ru) * | 2005-05-13 | 2006-06-20 | Ооо "Плазариум" | Горелка |
KR100787880B1 (ko) * | 2005-11-15 | 2007-12-27 | 김경수 | 분사 조절판 및 대기압 플라즈마를 이용한 플라즈마 발생장치 |
US7777500B2 (en) * | 2007-10-05 | 2010-08-17 | Lam Research Corporation | Methods for characterizing dielectric properties of parts |
-
2008
- 2008-01-31 KR KR1020080010285A patent/KR100872682B1/ko active IP Right Grant
- 2008-02-01 US US12/449,252 patent/US8373088B2/en active Active
- 2008-02-01 JP JP2009548157A patent/JP5594820B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2010518555A (ja) | 2010-05-27 |
KR20080072558A (ko) | 2008-08-06 |
KR100872682B1 (ko) | 2008-12-10 |
US8373088B2 (en) | 2013-02-12 |
US20100044352A1 (en) | 2010-02-25 |
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