JP5581337B2 - 光学検出デバイスを作製する方法 - Google Patents
光学検出デバイスを作製する方法 Download PDFInfo
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- JP5581337B2 JP5581337B2 JP2011544935A JP2011544935A JP5581337B2 JP 5581337 B2 JP5581337 B2 JP 5581337B2 JP 2011544935 A JP2011544935 A JP 2011544935A JP 2011544935 A JP2011544935 A JP 2011544935A JP 5581337 B2 JP5581337 B2 JP 5581337B2
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- 238000001514 detection method Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 9
- 230000003287 optical effect Effects 0.000 title claims 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 239000002077 nanosphere Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000004220 aggregation Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000002086 nanomaterial Substances 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 20
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 239000010931 gold Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 238000006722 reduction reaction Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 229910008045 Si-Si Inorganic materials 0.000 description 3
- 229910006411 Si—Si Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 229910052990 silicon hydride Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 2
- 101710134784 Agnoprotein Proteins 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- XEIPQVVAVOUIOP-UHFFFAOYSA-N [Au]=S Chemical compound [Au]=S XEIPQVVAVOUIOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001917 fluorescence detection Methods 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
- G02B2207/101—Nanooptics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
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- Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Glass Compositions (AREA)
Description
SiO2+6HF→2H++SiF6 2−+2H2O (1)
Siバルク−Si−Siδ+Fδ−+4HF→Siバルク−Si−H+SiF4 (2)
ここで、Siバルク−Si−Siδ+Fδ−は基板2を表す。その表面はフッ酸により攻撃され、その結果、上記表面に接合されたSiδ+Fδ−が形成される。Siバルクなる用語は、基板2のうち、上記表面層下に位置する部分を表す。
Si+2H2O→SiO2+4H++4e− (3)
Ag++e−→Ag0 (4)
もしくは、金の場合:
Au3++3e−→Au0 (5)
E0_反応3=−0.9V
E0_反応4=0.8V
である。
(ここで、nは、酸化/還元反応において移動した電子の数、Fはファラデー定数、Tは反応が起こる温度である)を用いて、酸化/還元反応について、平衡定数Keを計算により求めることができる。
E0_反応3=−0.9V
E0_反応5=1.52V
である。
Claims (3)
- 基板(2)上に複数の金属ナノ球体を作製するオペレーションを含む光学検出デバイスの作製方法であって、
当該作製方法は、
- 金属ナノ球体を収容することができる複数のリソグラフィーナノ構造体(4a、4b、4c)を基板(2)上に形成すること(100)、
- 各リソグラフィーナノ構造体(4a、4b、4c)においてそれぞれ金属のナノ球体が形成されるように、少なくとも一種の金属の自己凝集析出を行うこと(102)を含み、
上記の複数のリソグラフィーナノ構造体(4a、4b、4c)を作製するオペレーション(100)が、高分解能電子リソグラフィーを行って複数のナノレンズ(4a、4b、4c)を作製するオペレーションを含み、
上記のナノレンズ(4a、4b及び4c)を作製するオペレーションが、上記ナノレンズ(4a、4b、4c)を所望の方向(D)に配列するオペレーションを含み、
上記のナノレンズ(4a、4b、4c)を作製するオペレーションが、上記ナノレンズ(4a、4b、4c)を、上記方向(D)に沿って、互いの距離(d1、d2)が減少するように、それぞれ当該距離(d1、d2)だけ離間して配置するオペレーションを含む光学検出デバイスの作製方法。 - 上記の自己凝集析出を行うオペレーション(102)が:
- 上記基板(2)をフッ酸溶液に浸漬するオペレーション、
- その後、上記基板(2)を上記少なくとも1種の金属の溶液に浸漬するオペレーション、
を含む請求項1記載の方法。 - 上記基板(2)をフッ酸溶液に浸漬するオペレーション、及び、上記基板(2)を上記少なくとも1種の金属の溶液に浸漬するオペレーションのそれぞれの後に、上記基板(2)を脱イオン水で洗浄するオペレーション(102b、102d)をさらに備える請求項2記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2009A000001 | 2009-01-07 | ||
ITTO2009A000001A IT1399258B1 (it) | 2009-01-07 | 2009-01-07 | Procedimento di fabbricazione di un dispositivo di rilevazione ottica. |
PCT/IB2009/056004 WO2010079410A1 (en) | 2009-01-07 | 2009-12-31 | Method of manufacturing an optical detection device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012514748A JP2012514748A (ja) | 2012-06-28 |
JP2012514748A5 JP2012514748A5 (ja) | 2013-02-21 |
JP5581337B2 true JP5581337B2 (ja) | 2014-08-27 |
Family
ID=41078278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011544935A Expired - Fee Related JP5581337B2 (ja) | 2009-01-07 | 2009-12-31 | 光学検出デバイスを作製する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110265305A1 (ja) |
EP (1) | EP2409137A1 (ja) |
JP (1) | JP5581337B2 (ja) |
CN (1) | CN102893141A (ja) |
CA (1) | CA2749300A1 (ja) |
IT (1) | IT1399258B1 (ja) |
WO (1) | WO2010079410A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6461904B2 (ja) * | 2013-03-11 | 2019-01-30 | ケーエルエー−テンカー コーポレイション | 表面増強電場を用いた欠陥検出 |
CN106062537A (zh) * | 2013-12-24 | 2016-10-26 | 阿卜杜拉国王科技大学 | 包括纳米结构的分析设备 |
JP2016161548A (ja) * | 2015-03-05 | 2016-09-05 | 国立大学法人京都大学 | 探針の製造方法及び探針 |
CN110945344B (zh) * | 2017-06-01 | 2023-09-12 | 港大科桥有限公司 | 具有梯度纳米结构的传感器及其使用方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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DE19952018C1 (de) * | 1999-10-28 | 2001-08-23 | Martin Moeller | Verfahren zur Herstellung von im Nanometerbereich oberflächendekorierten Substraten |
DE10142224C2 (de) * | 2001-08-29 | 2003-11-06 | Infineon Technologies Ag | Verfahren zum Erzeugen von Hohlräumen mit Submikrometer-Abmessungen in einer Halbleitereinrichtung mittels eines Quellvorgangs |
KR101168654B1 (ko) * | 2004-05-19 | 2012-07-25 | 브이피 호울딩 엘엘씨 | 표면 증강 라만 산란에 의한 화학기의 증강된 검출을 위한 층상의 플라즈몬 구조를 가진 광센서 |
JP2006038506A (ja) * | 2004-07-23 | 2006-02-09 | Fuji Photo Film Co Ltd | 微細構造体 |
TW200620451A (en) * | 2004-11-09 | 2006-06-16 | Univ Osaka | Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method |
US7397043B2 (en) | 2005-01-26 | 2008-07-08 | Nomadics, Inc. | Standoff optical detection platform based on surface plasmon-coupled emission |
JP2008026109A (ja) * | 2006-07-20 | 2008-02-07 | Fujifilm Corp | 微細構造体及びその製造方法、センサデバイス及びラマン分光用デバイス |
IT1394445B1 (it) * | 2008-08-29 | 2012-06-15 | Calmed S R L | Dispositivo concentratore e localizzatore di un soluto e procedimento per concentrare e localizzare un soluto |
-
2009
- 2009-01-07 IT ITTO2009A000001A patent/IT1399258B1/it active
- 2009-12-31 EP EP09807469A patent/EP2409137A1/en not_active Withdrawn
- 2009-12-31 CA CA2749300A patent/CA2749300A1/en not_active Abandoned
- 2009-12-31 JP JP2011544935A patent/JP5581337B2/ja not_active Expired - Fee Related
- 2009-12-31 US US13/143,702 patent/US20110265305A1/en not_active Abandoned
- 2009-12-31 WO PCT/IB2009/056004 patent/WO2010079410A1/en active Application Filing
- 2009-12-31 CN CN2009801578834A patent/CN102893141A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP2409137A1 (en) | 2012-01-25 |
WO2010079410A1 (en) | 2010-07-15 |
JP2012514748A (ja) | 2012-06-28 |
CN102893141A (zh) | 2013-01-23 |
US20110265305A1 (en) | 2011-11-03 |
ITTO20090001A1 (it) | 2010-07-08 |
CA2749300A1 (en) | 2010-07-15 |
IT1399258B1 (it) | 2013-04-11 |
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