JP5580965B2 - 窒化物半導体レーザ装置 - Google Patents
窒化物半導体レーザ装置 Download PDFInfo
- Publication number
- JP5580965B2 JP5580965B2 JP2007100031A JP2007100031A JP5580965B2 JP 5580965 B2 JP5580965 B2 JP 5580965B2 JP 2007100031 A JP2007100031 A JP 2007100031A JP 2007100031 A JP2007100031 A JP 2007100031A JP 5580965 B2 JP5580965 B2 JP 5580965B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- algan
- type
- gan
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 150000004767 nitrides Chemical class 0.000 title claims description 16
- 229910002704 AlGaN Inorganic materials 0.000 claims description 63
- 238000005253 cladding Methods 0.000 claims description 51
- 239000000203 mixture Substances 0.000 claims description 26
- 239000002019 doping agent Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 226
- 239000010408 film Substances 0.000 description 47
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 27
- 238000005530 etching Methods 0.000 description 23
- 238000000034 method Methods 0.000 description 23
- 230000007774 longterm Effects 0.000 description 13
- 238000000927 vapour-phase epitaxy Methods 0.000 description 11
- 238000003776 cleavage reaction Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000007017 scission Effects 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000002109 crystal growth method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- -1 bis-cyclopentadienyl iron Chemical compound 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- YAYGSLOSTXKUBW-UHFFFAOYSA-N ruthenium(2+) Chemical compound [Ru+2] YAYGSLOSTXKUBW-UHFFFAOYSA-N 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
前記p型クラッド層の断面の一部に逆台形形状の部分があり、前記逆台形形状の部分の前記p型クラッド層の両側面は半絶縁性のAlGaN層によって埋め込まれ、かつ、前記AlGaN層上にも、前記p型クラッド層の前記逆台形形状の部分と連続して前記p型クラッド層が設けられ、その上にp型コンタクト層が設けられていることを特徴とする窒化物半導体レーザ装置。
一方、埋め込み型構造における注入電流と光の閉じ込めにおいては、埋め込み層として、活性層よりバンドギャップの大きいAlGaN層を用い、横方向における電流障壁と屈折率差を設け、注入電流と光の閉じ込め効率の向上を図った。なお、MQW活性層はInGaN層であることから埋め込み層はGaN層でも可能であるが、光ガイド層やバリヤー層のIn組成は一般に数%と少ないことから、屈折率差やバンドギャップ差を少しでも大きくするためにAlGaN層を埋め込み層に設ける。
本発明の断面構造を図2、概観図を図3、作製プロセスのフローを図4、各作製プロセスでの概観図を図5に示す。有機金属気相成長法により(0001)n型GaN基板1上にSiドープn型GaNバッファ層2(膜厚1000nm、Si濃度:1x1018cm-3)、Siドープn型AlGaNクラッド層3(Al組成:0.04、膜厚:2500nm、Si濃度:1x1018cm-3)、Siドープn型GaNガイド層4(膜厚:100nm、Si濃度:5x1017cm-3))、アンドープInGaNガイド層5(In組成:0.02、膜厚:30nm)、アンドープInGaN多重量子井戸活性層6(周期数:3、InGaN井戸層のIn組成:0.10、膜厚: 3.5nm、InGaN障壁層のIn組成:0.02、膜厚:7nm)、アンドープInGaNガイド層7(In組成:0.02、膜厚:30nm)、アンドープGaNガイド層8(膜厚:100nm)、Mgドープp型AlGaN電子ストッパー層9(Al組成:0.15、膜厚:10nm、Mg濃度:1x1019cm-3))、Mgドープp型AlGaN層クラッド層10(Al組成:0.05、膜厚:20nm、Mg濃度:2x1019cm-3))を順次成長後(図5(a)参照)、 酸化膜を堆積し、ウエットエッチングにより幅2μmのストライプ11を形成する(図5(b)参照)。
図6は本願発明のAlGaN埋め込み層の上面、斜面にFeドープGaN埋め込み層を付加した例である。実施例1と同様の工程により、有機金属気相成長法でMgドープp型AlGaNクラッド層10(Al組成:0.05、膜厚:20nm、Mg濃度:2x1019cm−3 )を成長後、Mgドープp型GaN層17(膜厚:10nm、Mg濃度:2x1019cm−3 )を成長し、マスクストライプ11を形成し、AlGaN埋め込み層12(Al組成:0.08、膜厚:500nm、Fe濃度:1x1019cm−3、比抵抗:107Ωcm)まで成長した後、FeドープGaN埋め込み層18(膜厚:10nm、Fe濃度:1x1019cm−3、比抵抗:107Ωcm)を成長する。その後、実施例1と同様の工程によりMgドープp型GaN層17上にMgドープAlGaN系p型クラッド層13、p型のコンタクト層14まで成長し、劈開により素子化する。本実施例では埋め込み層の再成長界面、クラッド層の再成長界面が全てGaN層であり、実施例1に記載のAlGaN層への再成長が無いことから、再成長界面における表面酸化が少なく、低欠陥な再成長界面を実現できる。
(実施例3)
図8は本願発明のFeドープAlGaN埋め込み層における成長条件を変えた例である。実施例1、2と同様の工程によりマスクストライプ11を形成した後、有機金属気相成長法で1050℃、0.1気圧でFeドープ半絶縁のAlGaN埋め込み層19(Al組成:0.08、膜厚:200nm、Fe濃度:1x1019cm-3、比抵抗:107Ωcm)を成長後、970℃、大気圧でFeドープ半絶縁のAlGaN埋め込み層20(Al組成:0.08、膜厚:300nm、比抵抗:107Ωcm)を成長する。その後、実施例1、2と同様の工程によりp型のコンタクト層14まで成長し、へき開により素子化する。
(実施例4)
図9は本実施例を活性層までエッチング除去した場合に適用した例である。上記実施例と同様の工程によりマスクストライプ11を形成した後、ドライエッチングにより深さ700nmのメサを形成する。その後、有機金属気相成長法でFeドープ半絶縁のAlGaN埋め込み層21(Al組成:0.08、膜厚:300nm、Fe濃度:1x1019cm-3、比抵抗:107Ωcm)、Feドープ半絶縁のGaN埋め込み層22(膜厚:50nm、Fe濃度:1x1019cm-3、比抵抗:107Ωcm)を成長した。その後、前記実施例と同様の工程によりp型クラッド層13、p型コンタクト層14を成長し、へき開により素子化する。本願発明では活性層の側面をバンドギャップの大きい半絶縁のAlGaN層で埋め込むことにより、横方向での電流狭窄が強まる。
(実施例5)
図10は活性層までエッチングした埋め込み構造の場合について、再成長界面の高品質化を行った例である。
(実施例6)
本実施例は半絶縁のドーパントにRuを適用した例である。上記実施例と同様にマスクストライプ11を形成した後、有機金属気相成長法によりRuドープ半絶縁性のAlGaN埋め込み層23(Al組成:0.08、膜厚:200nm、Ru濃度:5x1019cm-3比抵抗:8x107Ωcm)、Ruドープ半絶縁のGaN埋め込み層24(膜厚:50nm、Ru濃度:5x1019cm-3比抵抗:8x107Ωcm)を成長する。その後、前記実施例と同様の工程によりp型クラッド層13、p型コンタクト層14を成長し、ヘキカイにより素子化する。
1;n型GaN基板、2;n型GaNバッファ層、3;n型AlGaNクラッド層、4;n型GaNガイド層、5;アンドープInGaNガイド層、6;アンドープInGaN多重量子井戸活性層、7;アンドープInGaNガイド層、8;アンドープGaNガイド層、9;Mgドープp型AlGaN層、10;Mgドープp型GaN層、11;選択成長用マスクストライプ、12;Feドープ半絶縁のAlGaN埋め込み層、13;MgドープAlGaN系p型クラッド層、14;MgドープGaNコンタクト層、15;p型電極、16;n型電極、17;Feドープ半絶縁のAlGaN埋め込み層、18;FeドープGaN埋め込み層、19;Feドープ半絶縁のAlGaN埋め込み層、20;Feドープ半絶縁のAlGaN埋め込み層、21;Feドープ半絶縁のAlGaN埋め込み層、
22;Feドープ半絶縁のGaN埋め込み層、23;Ruドープ半絶縁のAlGaN埋め込み層、24;Ruドープ半絶縁のGaN埋め込み層。
Claims (1)
- 半導体基板上にn型クラッド層、活性層、ガイド層、p型クラッド層およびp型コンタクト層が順に積層され、
前記p型クラッド層の断面の一部に逆台形形状の部分を有し、
前記逆台形形状の部分の前記p型クラッド層の両側面は半絶縁性のAlGaN層によって埋め込まれ、かつ、前記AlGaN層上にも、前記p型クラッド層の前記逆台形形状の部分と連続して前記p型クラッド層が設けられ、
前記逆台形形状の部分であるメサ型のストライプの延在方向は<1-100>に平行な方向であり、
前記逆台形形状の部分における前記AlGaN層の斜面の面方位は(11-22)であり、
前記AlGaN層の前記半導体基板面からみて下面の面方位が(0001)であり、
前記AlGaN層の前記斜面、上面および下面上にはGaN層が設けられ、
前記AlGaN層を構成するAlGaN材料におけるAl組成比AlBと、AlGaN材料からなる前記p型クラッド層におけるAl組成比AlCとの関係が、AlB≧AlC>0であり、
前記AlGaN層の前記斜面、前記上面および前記下面上に設けられた前記GaN層は、前記AlGaN材料からなる前記p型クラッド層と接しており、
前記AlGaN層はドーパントとしてFeまたはRuが用いられ、
前記AlGaN層の膜厚は300〜1000nmであることを特徴とする窒化物半導体レーザ装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007100031A JP5580965B2 (ja) | 2007-04-06 | 2007-04-06 | 窒化物半導体レーザ装置 |
US11/841,010 US7596160B2 (en) | 2007-04-06 | 2007-08-20 | Nitride semiconductor lasers and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007100031A JP5580965B2 (ja) | 2007-04-06 | 2007-04-06 | 窒化物半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008258456A JP2008258456A (ja) | 2008-10-23 |
JP5580965B2 true JP5580965B2 (ja) | 2014-08-27 |
Family
ID=39826848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007100031A Active JP5580965B2 (ja) | 2007-04-06 | 2007-04-06 | 窒化物半導体レーザ装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7596160B2 (ja) |
JP (1) | JP5580965B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009194023A (ja) * | 2008-02-12 | 2009-08-27 | Sumitomo Electric Ind Ltd | 半導体光素子を作製する方法 |
JP5906445B2 (ja) * | 2008-12-10 | 2016-04-20 | パナソニックIpマネジメント株式会社 | 半導体レーザ装置及びその製造方法 |
JP2010232464A (ja) * | 2009-03-27 | 2010-10-14 | Showa Denko Kk | Iii族窒化物半導体発光素子及びその製造方法、並びにレーザダイオード |
JP2011029595A (ja) * | 2009-06-26 | 2011-02-10 | Opnext Japan Inc | 光モジュール及び集積型半導体光素子及びその製造方法 |
JP2011018784A (ja) | 2009-07-09 | 2011-01-27 | Sony Corp | 半導体レーザ素子及びその駆動方法、並びに、半導体レーザ装置 |
JP4769905B2 (ja) * | 2009-12-10 | 2011-09-07 | Dowaエレクトロニクス株式会社 | p型AlGaN層の製造方法およびIII族窒化物半導体発光素子 |
JP2013030505A (ja) * | 2011-07-26 | 2013-02-07 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体レーザ素子 |
JP6674087B2 (ja) * | 2015-10-29 | 2020-04-01 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
DE102019102499A1 (de) * | 2019-01-31 | 2020-08-06 | Forschungsverbund Berlin E.V. | Vorrichtung zur Erzeugung von Laserstrahlung |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3984200B2 (ja) * | 1996-07-26 | 2007-10-03 | 株式会社東芝 | 窒化ガリウム系化合物半導体レーザの製造方法 |
JP3447920B2 (ja) * | 1996-07-26 | 2003-09-16 | 株式会社東芝 | 窒化ガリウム系化合物半導体レーザ及びその製造方法 |
JP3201475B2 (ja) * | 1998-09-14 | 2001-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP3496712B2 (ja) * | 1999-04-05 | 2004-02-16 | 日本電気株式会社 | 窒化物系化合物半導体レーザ素子とその製造方法 |
US6653663B2 (en) * | 1999-12-06 | 2003-11-25 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor device |
JP2003179314A (ja) * | 2001-12-12 | 2003-06-27 | Sony Corp | 窒化物系半導体発光素子及びその作製方法 |
KR101284932B1 (ko) * | 2002-12-27 | 2013-07-10 | 제너럴 일렉트릭 캄파니 | 갈륨 나이트라이드 결정, 호모에피택셜 갈륨 나이트라이드계 디바이스 및 이들의 제조 방법 |
JP4337749B2 (ja) * | 2004-03-23 | 2009-09-30 | 住友電気工業株式会社 | 窒化ガリウムを形成する方法 |
US7655491B2 (en) * | 2004-05-12 | 2010-02-02 | Showa Denko K.K. | P-type Group III nitride semiconductor and production method thereof |
JP4693547B2 (ja) * | 2004-08-24 | 2011-06-01 | 株式会社東芝 | 半導体基板、半導体素子、及び半導体発光素子 |
JP2006229210A (ja) * | 2005-01-24 | 2006-08-31 | Matsushita Electric Ind Co Ltd | 窒化物半導体レーザ素子及びその製造方法 |
-
2007
- 2007-04-06 JP JP2007100031A patent/JP5580965B2/ja active Active
- 2007-08-20 US US11/841,010 patent/US7596160B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7596160B2 (en) | 2009-09-29 |
JP2008258456A (ja) | 2008-10-23 |
US20080247433A1 (en) | 2008-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5580965B2 (ja) | 窒化物半導体レーザ装置 | |
US6829273B2 (en) | Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same | |
US6835956B1 (en) | Nitride semiconductor device and manufacturing method thereof | |
US7125732B2 (en) | Semiconductor light emitting device and its manufacturing method | |
KR100829562B1 (ko) | 기판 접합 구조를 갖는 반도체 레이저 다이오드 및 그제조방법 | |
JP2006173621A (ja) | 半導体レーザ | |
JP4850324B2 (ja) | 窒化物半導体素子および窒化物半導体レーザ素子 | |
JP2003273472A (ja) | 窒化物半導体の薄膜形成方法および窒化物半導体発光素子 | |
JPWO2006013698A1 (ja) | 窒化物半導体素子、及びその製造方法 | |
JP2002374043A (ja) | 窒化ガリウム系化合物半導体素子 | |
JP5076656B2 (ja) | 窒化物半導体レーザ素子 | |
JP5507792B2 (ja) | Iii族窒化物半導体光素子 | |
JP3446660B2 (ja) | 窒化物半導体発光素子 | |
JP5334501B2 (ja) | 窒化物半導体素子 | |
JP4877294B2 (ja) | 半導体発光素子の製造方法 | |
JP3900196B2 (ja) | Iii族窒化物半導体光素子 | |
JP4628651B2 (ja) | 窒化物半導体発光素子の製造方法 | |
JP5023567B2 (ja) | 窒化物半導体レーザ素子 | |
JP2008028375A (ja) | 窒化物半導体レーザ素子 | |
JP2000124552A (ja) | 窒化物半導体レーザ素子 | |
JP2008177438A (ja) | 窒化物半導体発光素子 | |
JP5874689B2 (ja) | 半導体発光素子およびその製造方法 | |
JP3543628B2 (ja) | 窒化物系iii−v族化合物半導体の成長方法および半導体発光素子の製造方法 | |
JP4179280B2 (ja) | 半導体発光素子の製造方法 | |
JP3455500B2 (ja) | 半導体レーザ及び半導体レーザの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100301 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100301 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20110603 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20110707 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110817 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110823 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111024 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120807 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121009 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20121214 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20121220 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130618 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130918 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130926 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20131115 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140714 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5580965 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |