JP5580340B2 - 全方向性多層フォトニック構造を製造するための方法 - Google Patents
全方向性多層フォトニック構造を製造するための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 63
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0012—Optical design, e.g. procedures, algorithms, optimisation routines
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Description
[0.5mKLmKH0.5mKL]
で記述することができる。ここで、Lは、厚さDLを有する低屈折率材料の層を表し、Hは、厚さDHを有する高屈折率材料の層を表し、さらに、mKはグループGKに適用される厚み乗数である。従って、多層構造100は、一般式、
[(0.5mKLmKH0.5mKL)K]
を有し、ここで、Kは、K≧1の整数であり、設計されたターゲットフォトニック構造100において層グループGKの個数を表す。
DL=mKλref/8nL (1)
ここで、上記のように、nLは低屈折率材料の屈折率、λrefは被膜上に入射する光の規準波長、mKはこのグループに対する厚み乗数である。同様に、グループGKにおける高屈折率材料層104のそれぞれの層の厚さDHは、以下の様に書ける。
DH=mKλref/4nH (2)
ここで、上記のように、nHは高屈折率材料の屈折率、λrefは被膜上に入射する光の規準波長、mKはこのグループに対する厚み乗数である。
δj=(2π・nj・dj・cosθj)/λ (3)
ここで、λは入射光の波長、θjは層jにおける屈折角であり、Snellの法則によって以下の式が成立する。
n0sinθ0=njsinθj (4)
ここで、上述の表記によって、n0とθ0は入射媒体の屈折率及び入射角である。図3を参照すると、ここで使用されるように、入射角は、入射光300の光線と多層フォトニック構造の最上面に対する法線Nとの間の角度である。式(4)は、θjがこの層上の光の入射角θ0の関数であるように、θjに対して解くことができることを理解すべきである。
μ0=4π・10−7・(H/m)であり、ε0=1/(c2・μ0)≒8.85・10−12(F/m)であり、cは、真空中の光の速度である。
Claims (13)
- 高屈折率材料と低屈折率材料の少なくとも1個の交互層グループを含む多層フォトニック構造を製造するための方法であって、
a)前記多層フォトニック構造に対する固有性関数を決定し、
b)前記固有性関数をターゲットプロファイルにフィッティングすることによって、前記少なくとも1個の交互層グループそれぞれに対して厚さ乗数を決定し、
c)前記決定された厚さ乗数で前記固有性関数を調整し、さらに
d)調整された固有性関数をターゲットプロファイルと比較する、各ステップを備え、
前記調整された固有性関数が前記ターゲットプロファイルを近似しない場合は、少なくとも1個の追加の層グループを前記多層フォトニック構造に付加し、その後前記a)〜d)を繰り返す、方法。 - 請求項1に記載の方法において、
前記調整された固有性関数が前記ターゲットプロファイルを近似する場合、前記少なくとも1個の交互層グループに対する前記決定された厚さ乗数に基づいて、前記少なくとも1個の交互層グループにおける高屈折率材料及び低屈折率材料の層の厚さを計算し、さらに、
多層構造のそれぞれの層が前記計算された厚さを有するように、高屈折率材料と低屈折率材料の前記少なくとも1個の交互層グループを基板上に堆積させることによって、前記多層フォトニック構造を前記基板上に形成する、各ステップをさらに備える、方法。 - 請求項1に記載の方法において、前記固有性関数は、前記多層フォトニック構造の反射率、前記多層フォトニック構造の透過率又は前記多層フォトニック構造の吸収率を表す、方法。
- 請求項1に記載の方法において、前記固有性関数は転送行列法を用いて決定される、方法。
- 請求項4に記載の方法において、前記低屈折率材料の屈折率nL、前記高屈折率材料の屈折率nH、基準波長λref、入射媒体の屈折率n0、基板媒体の屈折率nsubstrate、入射光の入射角θ0及び入射光の偏光を選択するステップを、さらに備える、方法。
- 請求項1に記載の方法において、
前記少なくとも1個の交互層グループは、複数の交互層グループを含み、さらに、
それぞれの交互層グループに対して厚さ乗数が決定される、方法。 - 高及び低屈折率材料の少なくとも1個の交互層グループを備える全方向UV−IR反射器を製造するための方法において、
多層フォトニック構造上に入射する光の複数の角度に対して反射率関数を決定し、
電磁スペクトルのUV領域における光の波長に対して約100%の反射率と、電磁スペクトルの可視領域の光の波長に対して100%未満の反射率と、電磁スペクトルのIR領域における光の波長に対して約100%の反射率を有する、ターゲット反射率プロファイルを選択し、
それぞれの光の角度に対する反射率関数をターゲット反射率プロファイルにフィッティングすることによって、少なくとも1個の厚さ乗数の値を決定し、
前記決定された厚さ乗数に基づいて、それぞれの光の角度に対して前記反射率関数を調整し、さらに、
それぞれの光の角度に対する前記調整された反射率関数をターゲット反射率プロファイルと比較し、前記それぞれの光の角度に対する調整された反射率関数が前記ターゲット反射率プロファイルに近似しない場合、前記多層フォトニック構造に少なくとも1個の追加の層グループを付加して前記少なくとも1個の厚さ乗数を再度決定し、さらに前記それぞれの光の角度に対する調整された反射率関数が前記ターゲット反射率プロファイルに近似する場合、それぞれの層グループに対する平均の厚さ乗数を決定する、各ステップを備える方法。 - 請求項7に記載の方法において、
それぞれの交互層グループに対する決定された平均の厚さ乗数に基づいて、少なくとも1個の交互層グループにおける高屈折率材料と低屈折率材料層の厚さを計算し、さらに、
多層構造のそれぞれの層が前記計算された厚さを備えるように、基板上に高屈折率材料と低屈折率材料のそれぞれの交互層グループを堆積することによって、前記多層フォトニック構造を形成する、各ステップをさらに備える、方法。 - 請求項7に記載の方法において、前記ターゲット反射率プロファイルは、約200nmから約350nmの波長に対して100%の反射率と、約350nmから約850nmの波長に対して約10%の反射率と、約850nmから約2100nmの波長に対して約100%の反射率を有する、直角井戸関数である、方法。
- 請求項7に記載の方法において、前記反射率は、転送行列法によって決定される、方法。
- 請求項10に記載の方法において、前記低屈折率材料の屈折率nLと、前記高屈折率材料の屈折率nHと、基準波長λrefと、入射媒体の屈折率n0と、基板媒体の屈折率nsubstrateと、入射光の偏光とを選択するステップを、さらに備える、方法。
- 請求項11に記載の方法において、少なくとも1個の交互層グループは、[0.5mLmH0.5mL]の形状を有し、ここで、mは厚さ乗数、Lは低屈折率材料の層、Hは高屈折率材料の層である、方法。
- 請求項12に記載の方法において、低屈折率材料の各層の厚さDLは、
DL=mλref/8nL
であり、
高屈折率材料の各層の厚さDHは、
DH=mλref/4nH
である、方法。
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US12/389,256 | 2009-02-19 | ||
US12/389,256 US8329247B2 (en) | 2009-02-19 | 2009-02-19 | Methods for producing omni-directional multi-layer photonic structures |
PCT/US2010/022378 WO2010096250A1 (en) | 2009-02-19 | 2010-01-28 | Methods for producing omni-directional multi-layer photonic structures |
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JP (1) | JP5580340B2 (ja) |
CN (1) | CN102317836B (ja) |
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