JP5571523B2 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP5571523B2 JP5571523B2 JP2010229028A JP2010229028A JP5571523B2 JP 5571523 B2 JP5571523 B2 JP 5571523B2 JP 2010229028 A JP2010229028 A JP 2010229028A JP 2010229028 A JP2010229028 A JP 2010229028A JP 5571523 B2 JP5571523 B2 JP 5571523B2
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- solar cell
- cell module
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- 238000010248 power generation Methods 0.000 claims description 39
- 230000001681 protective effect Effects 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 5
- 239000005341 toughened glass Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229920005672 polyolefin resin Polymers 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 37
- 239000010410 layer Substances 0.000 description 34
- 239000012535 impurity Substances 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (19)
- 複数の太陽電池と、
前記複数の太陽電池の上に位置する保護膜と、
前記保護膜の上に位置する透明部材と
を含み、
前記透明部材は前記複数の太陽電池と向き合う内部面に形成された第1反射防止部を含み、
前記透明部材の内部面は太陽電池モジュールの発電領域に対応し、向き合う第1領域と、前記太陽電池モジュールの非発電領域に対応し、向き合う第2領域を含み、
前記第1反射防止部は前記透明部材の第2領域に選択的に位置する太陽電池モジュール。 - 前記透明部材は強化ガラスから成る、請求項1記載の太陽電池モジュール。
- 前記透明部材は凹凸面を備える、請求項1記載の太陽電池モジュール。
- 前記保護膜はEVA、PVB、EVA、シリコン樹脂、エステル系樹脂及びオレフイン系樹脂中の少なくとも一つで形成されている、請求項1記載の太陽電池モジュール。
- 前記第1反射防止部は酸化物系物質と窒化物系物質中の少なくとも一つを含む、請求項1記載の太陽電池モジュール。
- 前記酸化物系物質はアルミニウム酸化物、チタン酸化物及びシリコン酸化物中の少なくとも一つであり、前記窒化物系物質はシリコン窒化物を含む、請求項5記載の太陽電池モジュール。
- 前記第1反射防止部は前記太陽電池モジュールの端領域の少なくとも一部と重畳する端部を含む、請求項1記載の太陽電池モジュール。
- 前記端部は端に位置した太陽電池行と太陽電池列中の少なくとも一つの角領域と追加で重畳する、請求項7記載の太陽電池モジュール。
- 前記第1反射防止部は隣接した太陽電池列の間の領域と重畳する複数の縦部、隣接した太陽電池行の間の領域と重畳する複数の横部、または前記複数の縦部と前記複数の横部を含む、請求項1記載の太陽電池モジュール。
- 前記複数の縦部は前記隣接した太陽電池列の角領域に追加で重畳し、前記複数の横部は前記隣接した太陽電池行の角領域に追加で重畳する、請求項9記載の太陽電池モジュール。
- 前記第1反射防止部は格子形状を有する、請求項1記載の太陽電池モジュール。
- 前記複数の太陽電池それぞれは複数の集電部を含み、
前記第1反射防止部は前記複数の集電部と重畳する複数の補助パターン部を含む、請求項1記載の太陽電池モジュール。 - 前記第1反射防止部は前記透明部材の端まで位置する、請求項1記載の太陽電池モジュール。
- 前記複数の太陽電池、前記上部保護膜、前記下部保護膜及び前記透明部材を収納するフレームをさらに含む、請求項1記載の太陽電池モジュール。
- 前記第1反射防止部は前記フレームと前記透明部材の内部面が会う部分まで位置する、請求項14記載の太陽電池モジュール。
- 前記透明部材は前記内部面の反対側に位置する外部面に第2反射防止部をさらに含む、請求項1記載の太陽電池モジュール。
- 前記第2反射防止部は前記透明部材の全体面に位置する、請求項16記載の太陽電池モジュール。
- 複数の太陽電池と、
前記複数の太陽電池の上に位置する保護膜と、
前記保護膜の上に位置するガラス板と
を含み、
前記ガラス板は前記複数の太陽電池を保護し、
前記ガラス板は
前記複数の太陽電池と向き合う内部面に形成された第1反射防止部を含み、前記ガラス板の内部面は太陽電池モジュールの発電領域に対応し、向き合う第1領域と、前記太陽電池モジュールの非発電領域に対応し、向き合う第2領域を含み、
前記第1反射防止部は前記ガラス板の第2領域に選択的に位置する太陽電池モジュール。 - 前記第1反射防止部は前記太陽電池モジュールの端領域の少なくとも一部と重畳する端領域、隣接した太陽電池列間の領域と重畳する複数の縦部、そして隣接した太陽電池行の間の領域と重畳する複数の横部の少なくとも一つを含む、請求項18記載の太陽電池モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090132326A KR100993512B1 (ko) | 2009-12-29 | 2009-12-29 | 태양 전지 모듈 및 투명 부재 |
KR10-2009-0132326 | 2009-12-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011139025A JP2011139025A (ja) | 2011-07-14 |
JP5571523B2 true JP5571523B2 (ja) | 2014-08-13 |
Family
ID=43409566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010229028A Active JP5571523B2 (ja) | 2009-12-29 | 2010-10-08 | 太陽電池モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110155210A1 (ja) |
EP (1) | EP2341548B1 (ja) |
JP (1) | JP5571523B2 (ja) |
KR (1) | KR100993512B1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101642159B1 (ko) * | 2011-02-16 | 2016-07-29 | 엘지전자 주식회사 | 태양 전지 및 태양 전지 모듈 |
US20130118548A1 (en) * | 2011-11-11 | 2013-05-16 | Qualcomm Mems Technologies, Inc. | Apparatus and methods for enhancing photovoltaic efficiency |
KR101349554B1 (ko) * | 2011-12-19 | 2014-01-10 | 엘지이노텍 주식회사 | 태양전지 모듈 |
KR101169562B1 (ko) | 2012-04-30 | 2012-07-27 | 전북대학교산학협력단 | Bipv 태양광 모듈의 제조방법 |
KR101979271B1 (ko) * | 2013-02-28 | 2019-05-16 | 엘지전자 주식회사 | 태양 전지 모듈 |
KR20140052216A (ko) * | 2012-10-23 | 2014-05-07 | 엘지전자 주식회사 | 태양전지 모듈 |
EP2725628B1 (en) * | 2012-10-23 | 2020-04-08 | LG Electronics, Inc. | Solar cell module |
US9464783B2 (en) | 2013-03-15 | 2016-10-11 | John Paul Morgan | Concentrated photovoltaic panel |
US9960303B2 (en) | 2013-03-15 | 2018-05-01 | Morgan Solar Inc. | Sunlight concentrating and harvesting device |
US9714756B2 (en) | 2013-03-15 | 2017-07-25 | Morgan Solar Inc. | Illumination device |
US9595627B2 (en) | 2013-03-15 | 2017-03-14 | John Paul Morgan | Photovoltaic panel |
KR102233886B1 (ko) * | 2014-01-09 | 2021-03-30 | 엘지전자 주식회사 | 태양전지 모듈 |
EP3104419B1 (en) * | 2014-02-06 | 2019-01-16 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell module and solar cell module manufacturing method |
US9991405B2 (en) * | 2014-02-28 | 2018-06-05 | Sunpower Corporation | Solar module with aligning encapsulant |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3472698A (en) * | 1967-05-18 | 1969-10-14 | Nasa | Silicon solar cell with cover glass bonded to cell by metal pattern |
KR100192257B1 (ko) | 1991-12-31 | 1999-06-15 | 구자홍 | 태양전지 제조방법 |
JPH05235396A (ja) * | 1992-02-24 | 1993-09-10 | Sumitomo Electric Ind Ltd | 半導体受光装置 |
JP2000031515A (ja) * | 1998-07-13 | 2000-01-28 | Bridgestone Corp | 太陽電池モジュール |
JP2003124491A (ja) * | 2001-10-15 | 2003-04-25 | Sharp Corp | 薄膜太陽電池モジュール |
JP2003152202A (ja) * | 2001-11-19 | 2003-05-23 | Sharp Corp | 太陽電池モジュール |
JP4540447B2 (ja) * | 2004-10-27 | 2010-09-08 | シャープ株式会社 | 太陽電池および太陽電池の製造方法 |
US20080289681A1 (en) * | 2007-02-27 | 2008-11-27 | Adriani Paul M | Structures for low cost, reliable solar modules |
-
2009
- 2009-12-29 KR KR1020090132326A patent/KR100993512B1/ko active IP Right Grant
-
2010
- 2010-08-03 US US12/849,326 patent/US20110155210A1/en not_active Abandoned
- 2010-08-16 EP EP10008525.7A patent/EP2341548B1/en active Active
- 2010-10-08 JP JP2010229028A patent/JP5571523B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP2341548A2 (en) | 2011-07-06 |
EP2341548B1 (en) | 2019-04-24 |
US20110155210A1 (en) | 2011-06-30 |
JP2011139025A (ja) | 2011-07-14 |
EP2341548A3 (en) | 2016-02-17 |
KR100993512B1 (ko) | 2010-11-12 |
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