JP5564701B2 - 常温磁性強誘電性超格子およびその製造方法 - Google Patents

常温磁性強誘電性超格子およびその製造方法 Download PDF

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JP5564701B2
JP5564701B2 JP2007130252A JP2007130252A JP5564701B2 JP 5564701 B2 JP5564701 B2 JP 5564701B2 JP 2007130252 A JP2007130252 A JP 2007130252A JP 2007130252 A JP2007130252 A JP 2007130252A JP 5564701 B2 JP5564701 B2 JP 5564701B2
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oxide thin
superlattice
room temperature
substrate
oxide
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JP2008285350A (ja
JP2008285350A5 (https=
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弘 坂間
能也 市川
振一郎 中村
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Sophia School Corp
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JP2007130252A 2007-05-16 2007-05-16 常温磁性強誘電性超格子およびその製造方法 Expired - Fee Related JP5564701B2 (ja)

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JP2008285350A JP2008285350A (ja) 2008-11-27
JP2008285350A5 JP2008285350A5 (https=) 2010-07-01
JP5564701B2 true JP5564701B2 (ja) 2014-08-06

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Publication number Priority date Publication date Assignee Title
WO2013181370A1 (en) * 2012-05-31 2013-12-05 Board Of Governors For Higher Education, State Of Rhode A multiferro-heterostructure composition having tunable magnetic coupling at room temperature
JP6161147B2 (ja) * 2013-01-25 2017-07-12 国立研究開発法人物質・材料研究機構 ペロブスカイト構造を利用した電場調整可能なトポロジカル絶縁体
CN113690051B (zh) * 2021-06-30 2023-03-31 中国科学院深圳先进技术研究院 具有超晶格结构和超高储能效率的多组分弛豫铁电薄膜材料及其制备方法

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JPH02170306A (ja) * 1988-12-23 1990-07-02 Olympus Optical Co Ltd 強磁性強誘電体酸化物及びその薄膜の製造方法
JP3969833B2 (ja) * 1998-04-02 2007-09-05 独立行政法人科学技術振興機構 強磁性強誘電体薄膜とその製造方法
JP4219021B2 (ja) * 1998-11-16 2009-02-04 独立行政法人科学技術振興機構 酸化物人工超格子薄膜とその製造方法
JP4034139B2 (ja) * 2002-07-25 2008-01-16 独立行政法人科学技術振興機構 BiMnO3結晶の合成方法及びBiMnO3結晶合成用の組成物
WO2006028005A1 (ja) * 2004-09-08 2006-03-16 Kyoto University 強磁性強誘電体及びその製造方法

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