JP2008285350A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008285350A5 JP2008285350A5 JP2007130252A JP2007130252A JP2008285350A5 JP 2008285350 A5 JP2008285350 A5 JP 2008285350A5 JP 2007130252 A JP2007130252 A JP 2007130252A JP 2007130252 A JP2007130252 A JP 2007130252A JP 2008285350 A5 JP2008285350 A5 JP 2008285350A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide thin
- superlattice
- thin films
- oxide
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 20
- 230000005291 magnetic effect Effects 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 7
- 239000002885 antiferromagnetic material Substances 0.000 claims description 4
- 230000002269 spontaneous effect Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 230000005415 magnetization Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000010287 polarization Effects 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims 3
- 238000010030 laminating Methods 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007130252A JP5564701B2 (ja) | 2007-05-16 | 2007-05-16 | 常温磁性強誘電性超格子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007130252A JP5564701B2 (ja) | 2007-05-16 | 2007-05-16 | 常温磁性強誘電性超格子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008285350A JP2008285350A (ja) | 2008-11-27 |
| JP2008285350A5 true JP2008285350A5 (https=) | 2010-07-01 |
| JP5564701B2 JP5564701B2 (ja) | 2014-08-06 |
Family
ID=40145453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007130252A Expired - Fee Related JP5564701B2 (ja) | 2007-05-16 | 2007-05-16 | 常温磁性強誘電性超格子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5564701B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013181370A1 (en) * | 2012-05-31 | 2013-12-05 | Board Of Governors For Higher Education, State Of Rhode | A multiferro-heterostructure composition having tunable magnetic coupling at room temperature |
| JP6161147B2 (ja) * | 2013-01-25 | 2017-07-12 | 国立研究開発法人物質・材料研究機構 | ペロブスカイト構造を利用した電場調整可能なトポロジカル絶縁体 |
| CN113690051B (zh) * | 2021-06-30 | 2023-03-31 | 中国科学院深圳先进技术研究院 | 具有超晶格结构和超高储能效率的多组分弛豫铁电薄膜材料及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170306A (ja) * | 1988-12-23 | 1990-07-02 | Olympus Optical Co Ltd | 強磁性強誘電体酸化物及びその薄膜の製造方法 |
| JP3969833B2 (ja) * | 1998-04-02 | 2007-09-05 | 独立行政法人科学技術振興機構 | 強磁性強誘電体薄膜とその製造方法 |
| JP4219021B2 (ja) * | 1998-11-16 | 2009-02-04 | 独立行政法人科学技術振興機構 | 酸化物人工超格子薄膜とその製造方法 |
| JP4034139B2 (ja) * | 2002-07-25 | 2008-01-16 | 独立行政法人科学技術振興機構 | BiMnO3結晶の合成方法及びBiMnO3結晶合成用の組成物 |
| WO2006028005A1 (ja) * | 2004-09-08 | 2006-03-16 | Kyoto University | 強磁性強誘電体及びその製造方法 |
-
2007
- 2007-05-16 JP JP2007130252A patent/JP5564701B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ortega et al. | Multifunctional magnetoelectric materials for device applications | |
| JP6135018B2 (ja) | 磁気抵抗素子および磁気メモリ | |
| JP5868491B2 (ja) | 磁気ランダム・アクセス・メモリのための磁気トンネル接合およびその形成方法 | |
| JP4551484B2 (ja) | トンネル磁気抵抗薄膜及び磁性多層膜作製装置 | |
| CN115666208B (zh) | 层叠结构、磁阻效应元件、磁头、传感器、高频滤波器以及振荡器 | |
| US10937951B2 (en) | Magnetoresistance effect element | |
| CN102916125A (zh) | 磁存储器件及其制造方法 | |
| JP2014517516A5 (https=) | ||
| JP6103123B1 (ja) | 磁気抵抗効果素子、磁気センサ及び磁気メモリ | |
| US9263189B2 (en) | Magnetic capacitor | |
| JP4834834B2 (ja) | トンネル磁気抵抗素子、不揮発性磁気メモリ、発光素子および3端子素子 | |
| JP6844743B2 (ja) | 強磁性積層膜、スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ | |
| JP2008024532A5 (https=) | ||
| WO2016158926A1 (ja) | 磁気抵抗効果素子 | |
| US20180096792A1 (en) | Magnetic Capacitor | |
| JP2008285350A5 (https=) | ||
| CN103137850A (zh) | 磁性多层膜霍尔元件及其制备方法 | |
| CN110224060A (zh) | 磁阻效应元件 | |
| JP2015207593A (ja) | 磁気抵抗素子 | |
| CN110603618A (zh) | 磁耦合层、包括磁耦合层的结构及其制造和/或使用它们的方法 | |
| JP5564701B2 (ja) | 常温磁性強誘電性超格子およびその製造方法 | |
| JP4915765B2 (ja) | 強磁性半導体交換結合膜 | |
| JP7096198B2 (ja) | 磁気抵抗効果素子 | |
| JP4219021B2 (ja) | 酸化物人工超格子薄膜とその製造方法 | |
| CN100389954C (zh) | 一种成分调制的钙钛矿类半金属复合多层膜及其用途 |