JP2008285350A5 - - Google Patents

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JP2008285350A5
JP2008285350A5 JP2007130252A JP2007130252A JP2008285350A5 JP 2008285350 A5 JP2008285350 A5 JP 2008285350A5 JP 2007130252 A JP2007130252 A JP 2007130252A JP 2007130252 A JP2007130252 A JP 2007130252A JP 2008285350 A5 JP2008285350 A5 JP 2008285350A5
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oxide thin
superlattice
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すなわち本発明の第一の態様は、基板上に、少なくとも２種類の酸化物薄膜が積層されてなり、前記酸化物薄膜の各層が奇数枚の原子層からなることを特徴とする超格子であって、−５０〜５０℃において１５ｅｍｕ／ｃｃ以上の自発磁化と、１μＣ／ｃｍ２以上の自発分極とを同時に示すことを特徴とする常温磁性強誘電性超格子を提供して前記課題を解決するものである。 That is, a first aspect of the present invention is a superlattice characterized in that at least two kinds of oxide thin films are laminated on a substrate, and each layer of the oxide thin films is composed of an odd number of atomic layers. The present invention provides a room temperature magnetic ferroelectric superlattice characterized by simultaneously exhibiting spontaneous magnetization of 15 emu / cc or more at −50 to 50 ° C. and spontaneous polarization of 1 μC / cm 2 or more. Is.

本発明の第二の態様は、基板上に、少なくとも２種類の強誘電性酸化物薄膜が積層されてなる超格子であって、前記各酸化物薄膜を構成する酸化物がＧ型反強磁性体であり、前記各酸化物薄膜が、前記基板に対して（１１１）方向に配向しており、かつ前記酸化物薄膜の各層が奇数枚の原子層からなることを特徴とする、常温磁性強誘電性超格子を提供して前記課題を解決するものである。 According to a second aspect of the present invention, there is provided a superlattice in which at least two types of ferroelectric oxide thin films are laminated on a substrate, and the oxide constituting each of the oxide thin films is a G-type antiferromagnet. And each oxide thin film is oriented in the (111) direction with respect to the substrate, and each layer of the oxide thin film is composed of an odd number of atomic layers. A dielectric superlattice is provided to solve the above problems.

本発明の第三の態様は、基板上に、少なくとも２種類の強誘電性酸化物薄膜が積層されてなる超格子であって、前記各酸化物薄膜を構成する酸化物がＡ型反強磁性体であり、前記各酸化物薄膜が、前記基板に対して（１００）方向に配向しており、かつ前記酸化物薄膜の各層が奇数枚の原子層からなることを特徴とする、常温磁性強誘電性超格子を提供して前記課題を解決するものである。  A third aspect of the present invention is a superlattice in which at least two kinds of ferroelectric oxide thin films are laminated on a substrate, and the oxides constituting each of the oxide thin films are A-type antiferromagnetic The oxide thin film is oriented in the (100) direction with respect to the substrate, and each layer of the oxide thin film is composed of an odd number of atomic layers. A dielectric superlattice is provided to solve the above problems.

本発明の第四の態様は、基板上に、少なくとも２種類の強誘電性酸化物薄膜が積層されてなる超格子であって、前記各酸化物薄膜を構成する酸化物がＣ型反強磁性体であり、前記各酸化物薄膜が、前記基板に対して（１１０）方向に配向しており、かつ前記酸化物薄膜の各層が奇数枚の原子層からなることを特徴とする、常温磁性強誘電性超格子を提供して前記課題を解決するものである。  According to a fourth aspect of the present invention, there is provided a superlattice in which at least two types of ferroelectric oxide thin films are laminated on a substrate, and the oxide constituting each oxide thin film is a C-type antiferromagnetic material. And each oxide thin film is oriented in the (110) direction with respect to the substrate, and each layer of the oxide thin film is composed of an odd number of atomic layers. A dielectric superlattice is provided to solve the above problems.

第一〜第四の態様において、基板は、酸化物単結晶であることが好ましく、その基板表面はステップ−テラス構造で構成されており、テラス幅の平均が５０ｎｍ以上であることがより好ましい。また、これらの態様において、基板は、ペロブスカイト型酸化物単結晶であることがより好ましく、基板がペロブスカイト型酸化物単結晶である場合、酸化物薄膜の配向方向と同じ面指数を有していることがさらに好ましい。 In the first to fourth embodiments, the substrate is preferably an oxide single crystal, the substrate surface is formed of a step-terrace structure, and the average terrace width is more preferably 50 nm or more. In these embodiments, the substrate is more preferably a perovskite oxide single crystal, and when the substrate is a perovskite oxide single crystal, it has the same plane index as the orientation direction of the oxide thin film. More preferably.

本発明の第五の態様は、酸化物薄膜を気相成長または塗布成長によって製膜することを特徴とする、本発明の第一〜第四の態様（各好ましい態様も含む。）の常温磁性強誘電性超格子の製造方法を提供して前記課題を解決するものである。 The fifth aspect of the present invention is the room temperature magnetism of the first to fourth aspects (including each preferred aspect) of the present invention, wherein the oxide thin film is formed by vapor phase growth or coating growth. A method for manufacturing a ferroelectric superlattice is provided to solve the above-mentioned problems.

本発明の第六の態様は、本発明の第一〜第四の態様（各好ましい態様も含む。）の酸化物超格子の常温での使用によって前記課題を解決するものである。 The sixth aspect of the present invention solves the above problems by using the oxide superlattice of the first to fourth aspects (including each preferred aspect) of the present invention at room temperature.

Claims (13)

基板上に、少なくとも２種類の酸化物薄膜が積層されてなり、前記酸化物薄膜の各層が奇数枚の原子層からなることを特徴とする超格子であって、−５０〜５０℃において１５ｅｍｕ／ｃｃ以上の自発磁化と、１μＣ／ｃｍ２以上の自発分極とを同時に示すことを特徴とする常温磁性強誘電性超格子。 A superlattice comprising at least two kinds of oxide thin films laminated on a substrate, wherein each layer of the oxide thin films is composed of an odd number of atomic layers, and has a capacity of 15 emu / cm at −50 to 50 ° C. A room temperature magnetic ferroelectric superlattice characterized by simultaneously exhibiting spontaneous magnetization of cc or more and spontaneous polarization of 1 μC / cm 2 or more. 基板上に、少なくとも２種類の強誘電性酸化物薄膜が積層されてなる超格子であって、前記各酸化物薄膜を構成する酸化物がＧ型反強磁性体であり、前記各酸化物薄膜が、前記基板に対して（１１１）方向に配向しており、かつ前記酸化物薄膜の各層が奇数枚の原子層からなることを特徴とする、常温磁性強誘電性超格子。 A superlattice formed by laminating at least two types of ferroelectric oxide thin films on a substrate, and the oxides constituting the oxide thin films are G-type antiferromagnetic materials, and the oxide thin films A room-temperature magnetic ferroelectric superlattice characterized in that it is oriented in the (111) direction with respect to the substrate, and each layer of the oxide thin film is composed of an odd number of atomic layers. 前記酸化物薄膜が、一般式ＡＢＯ３で表わされるペロブスカイト型酸化物（Ａ、Ｂは互いに異なる元素を表す。）よりなるものであることを特徴とする請求項１または２に記載の磁性強誘電性超格子。 3. The magnetic ferroelectric according to claim 1, wherein the oxide thin film is made of a perovskite oxide represented by a general formula ABO 3 (A and B represent different elements from each other). Superlattices. 前記Ａで表わされる元素がＢｉまたはＰｂであり、前記Ｂで表わされる元素がＴｉ、Ｖ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕのいずれかであることを特徴とする請求項３に記載の磁性強誘電性超格子。 The element represented by A is Bi or Pb, and the element represented by B is any one of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu. Magnetic ferroelectric superlattice. 異なる種類の前記酸化物薄膜が接合する界面において、隣接する前記酸化物薄膜のうちの一方の前記ＢがＴｉ、Ｖ、Ｃｒ、Ｍｎのいずれかであり、他方の前記ＢがＦｅ、Ｃｏ、Ｎｉ、Ｃｕのいずれかであることを特徴とする請求項３または４に記載の磁性強誘電性超格子。 At the interface where the different types of oxide thin films are joined, one of the adjacent oxide thin films is any one of Ti, V, Cr, Mn, and the other B is Fe, Co, Ni. The magnetic ferroelectric superlattice according to claim 3 or 4, wherein the magnetic ferroelectric superlattice is any one of Cu and Cu. 基板上に、少なくとも２種類の強誘電性酸化物薄膜が積層されてなる超格子であって、前記各酸化物薄膜を構成する酸化物がＡ型反強磁性体であり、前記各酸化物薄膜が、前記基板に対して（１００）方向に配向しており、かつ前記酸化物薄膜の各層が奇数枚の原子層からなることを特徴とする、常温磁性強誘電性超格子。 A superlattice formed by laminating at least two types of ferroelectric oxide thin films on a substrate, and the oxides constituting the oxide thin films are A-type antiferromagnetic materials, and the oxide thin films The room temperature magnetic ferroelectric superlattice is characterized in that it is oriented in the (100) direction with respect to the substrate , and each layer of the oxide thin film is composed of an odd number of atomic layers . 基板上に、少なくとも２種類の強誘電性酸化物薄膜が積層されてなる超格子であって、前記各酸化物薄膜を構成する酸化物がＣ型反強磁性体であり、前記各酸化物薄膜が、前記基板に対して（１１０）方向に配向しており、かつ前記酸化物薄膜の各層が奇数枚の原子層からなることを特徴とする、常温磁性強誘電性超格子。 A superlattice formed by laminating at least two types of ferroelectric oxide thin films on a substrate, and an oxide constituting each of the oxide thin films is a C-type antiferromagnetic material, and each of the oxide thin films The room temperature magnetic ferroelectric superlattice is characterized in that it is oriented in the (110) direction with respect to the substrate , and each layer of the oxide thin film is composed of an odd number of atomic layers . 前記基板が酸化物単結晶であることを特徴とする請求項１〜７のいずれかに記載の磁性強誘電性超格子。 8. The magnetic ferroelectric superlattice according to claim 1 , wherein the substrate is an oxide single crystal. 前記基板表面がステップ−テラス構造で構成されており、そのテラス幅の平均が５０ｎｍ以上であることを特徴とする請求項８に記載の磁性強誘電性超格子。 9. The magnetic ferroelectric superlattice according to claim 8 , wherein the substrate surface has a step-terrace structure, and the average terrace width is 50 nm or more. 前記酸化物単結晶がペロブスカイト型酸化物単結晶であることを特徴とする請求項８または９に記載の磁性強誘電性超格子。 10. The magnetic ferroelectric superlattice according to claim 8, wherein the oxide single crystal is a perovskite oxide single crystal. 前記ペロブスカイト型酸化物単結晶が、前記酸化物薄膜の配向方向と同じ面指数を有していることを特徴とする請求項１０に記載の磁性強誘電性超格子。 11. The magnetic ferroelectric superlattice according to claim 10 , wherein the perovskite oxide single crystal has the same plane index as the orientation direction of the oxide thin film. 前記酸化物薄膜を気相成長または塗布成長によって製膜することを特徴とする請求項１〜１１のいずれかに記載の磁性強誘電性超格子の製造方法。 The method of manufacturing a magnetic ferroelectric superlattice according to claim 1 , wherein the oxide thin film is formed by vapor phase growth or coating growth. 請求項１〜１１のいずれか１項に記載の酸化物超格子の常温での使用。 Use of the oxide superlattice according to any one of claims 1 to 11 at room temperature.
JP2007130252A 2007-05-16 2007-05-16 Room temperature magnetic ferroelectric superlattice and method of manufacturing the same Expired - Fee Related JP5564701B2 (en)

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