JP5563097B2 - プラズマアークトーチの位置調節装置 - Google Patents
プラズマアークトーチの位置調節装置 Download PDFInfo
- Publication number
- JP5563097B2 JP5563097B2 JP2012541962A JP2012541962A JP5563097B2 JP 5563097 B2 JP5563097 B2 JP 5563097B2 JP 2012541962 A JP2012541962 A JP 2012541962A JP 2012541962 A JP2012541962 A JP 2012541962A JP 5563097 B2 JP5563097 B2 JP 5563097B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma arc
- arc torch
- torch
- motor
- rotating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 51
- 229910052710 silicon Inorganic materials 0.000 claims description 51
- 239000010703 silicon Substances 0.000 claims description 51
- 230000003028 elevating effect Effects 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 18
- 239000002994 raw material Substances 0.000 description 17
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 238000009749 continuous casting Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003517 fume Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/44—Plasma torches using an arc using more than one torch
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
- B23K10/006—Control circuits therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
- B23K10/02—Plasma welding
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/38—Guiding or centering of electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Furnace Details (AREA)
- Photovoltaic Devices (AREA)
Description
本発明の技術的課題は、以上で言及した技術的課題に制限されず、言及しない他の技術的課題は、下記の記載から本発明の属する技術分野における通常の知識を有する者に明確に理解されることができる。
前記回転モータ32が作業者により一方向または他方向に回転すれば、前記回転プレート36が矢印B方向に回転し、回転プレート36に固定された前記プラズマアークトーチ18が周方向に移動する。このようにすれば、前記シリコン溶湯14の加熱がプラズマアークトーチ18の固定位置によって円滑に行われるように側壁や角部に位置させることが可能になるので、シリコン溶湯14の表面で投入される原料などの干渉や加熱面積の分配に有利になるので、全体的にプラズマアークトーチ18を活用したシリコン溶融に有利な均一な加熱面の確保が可能になる。さらに、図1及び図2を参照して前記プラズマアークトーチ18の角度調節のための角度調節装置40の構成について説明する。前記角度調節装置40は、大きく分けて角度調節モータ42と、前記角度調節モータ42で伝達された動力を直線運動に変換させるカム歯車48と、前記カム歯車48の回転に連動して径方向に移動可能であり、前記プラズマアークトーチ18と連結されるトーチ連結部材52と、を含む。
Claims (5)
- シリコン溶湯に対してプラズマアークトーチを昇降させる昇降装置と、
前記シリコン溶湯に対してプラズマアークトーチを周方向に回転させる回転装置と、
前記シリコン溶湯に対してプラズマアークトーチの角度を調節する角度調節装置と、を含み、
前記プラズマアークトーチは、多数個が放射状に配置されて、
前記昇降装置は、昇降モータと、前記昇降モータに連結され、動力を伝達する駆動歯車と、前記駆動歯車と噛み合って回転するねじジャッキと、前記ねじジャッキに連結され、前記ねじジャッキの回転に連動して昇降する昇降プレートと、を含み、
前記回転装置は、回転モータと、前記回転モータから動力を伝達されて回転する駆動ベルトと、前記駆動ベルトが巻き取られ、前記駆動ベルトの回転に連動して回転する回転プレートと、を含み、
前記角度調節装置は、角度調節モータと、前記角度調節モータで伝達された動力を直線運動に変換させるカム歯車と、前記カム歯車の回転に連動して径方向に移動可能であり、前記プラズマアークトーチと回転自在に連結されるトーチ連結部材と、を含むことを特徴とするプラズマアークトーチの位置調節装置。 - 前記プラズマアークトーチの回転中心になり、前記回転プレートに固定される固定部をさらに含むことを特徴とする請求項1に記載のプラズマアークトーチの位置調節装置。
- 前記角度調節モータのモータ軸にかさ歯車が設けられ、前記カム歯車に動力を伝達することを特徴とする請求項1に記載のプラズマアークトーチの位置調節装置。
- 前記トーチ連結部材には、前記カム歯車に形成されたカムスリットに挿入される連結ピンが設けられることを特徴とする請求項3に記載のプラズマアークトーチの位置調節装置。
- 前記プラズマアークトーチは、4個が周方向で90度の間隔をあけて配置されることを特徴とする請求項1に記載のプラズマアークトーチの位置調節装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090125556A KR101581046B1 (ko) | 2009-12-16 | 2009-12-16 | 플라즈마 아크토치의 위치조절장치 |
KR10-2009-0125556 | 2009-12-16 | ||
PCT/KR2010/008918 WO2011074848A2 (ko) | 2009-12-16 | 2010-12-14 | 플라즈마 아크토치의 위치조절장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013512413A JP2013512413A (ja) | 2013-04-11 |
JP5563097B2 true JP5563097B2 (ja) | 2014-07-30 |
Family
ID=44167847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012541962A Expired - Fee Related JP5563097B2 (ja) | 2009-12-16 | 2010-12-14 | プラズマアークトーチの位置調節装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8912463B2 (ja) |
JP (1) | JP5563097B2 (ja) |
KR (1) | KR101581046B1 (ja) |
CN (1) | CN102639760B (ja) |
WO (1) | WO2011074848A2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102623929B1 (ko) | 2021-10-20 | 2024-01-11 | 주식회사 에이치지에스 | 플라즈마 설비의 레벨링 장치 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3147329A (en) * | 1955-07-26 | 1964-09-01 | Union Carbide Corp | Method and apparatus for heating metal melting furnaces |
US3849584A (en) * | 1973-10-24 | 1974-11-19 | B Paton | Plasma arc torch |
CN1009231B (zh) * | 1984-10-17 | 1990-08-15 | 库曼公司 | 改进的环形变压器及其制造设备和方法 |
US4770109A (en) * | 1987-05-04 | 1988-09-13 | Retech, Inc. | Apparatus and method for high temperature disposal of hazardous waste materials |
JP3260838B2 (ja) * | 1992-07-20 | 2002-02-25 | 株式会社田中製作所 | プラズマy開先切断トーチブロック |
JP2795811B2 (ja) * | 1994-08-19 | 1998-09-10 | 川崎重工業株式会社 | ごみ焼却灰のプラズマ溶融炉 |
JPH08176690A (ja) * | 1994-12-22 | 1996-07-09 | Nippon Steel Corp | プラズマアークによる溶融金属の加熱装置 |
JPH09145254A (ja) * | 1995-11-20 | 1997-06-06 | Nippon Steel Corp | 電気炉 |
JPH11241168A (ja) * | 1998-02-26 | 1999-09-07 | Komatsu Ltd | 表面処理装置並びにアーク放電による表面処理装置および方法 |
DE29805999U1 (de) * | 1998-04-03 | 1998-06-25 | Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen | Vorrichtung zur Plasmabehandlung von Oberflächen |
RU2159213C2 (ru) * | 1999-02-25 | 2000-11-20 | Абдюханов Мансур Абдрахманович | Способ очистки кремния и устройство для его осуществления |
JP3646570B2 (ja) * | 1999-07-01 | 2005-05-11 | 三菱住友シリコン株式会社 | シリコン連続鋳造方法 |
JP3603676B2 (ja) * | 1999-07-01 | 2004-12-22 | 三菱住友シリコン株式会社 | シリコン連続鋳造方法 |
CN1217561C (zh) * | 2000-04-10 | 2005-08-31 | 特乔尼科斯有限公司 | 双等离子体喷管装置 |
JP2002110399A (ja) | 2000-09-29 | 2002-04-12 | Koike Sanso Kogyo Co Ltd | トーチ間移行プラズマ装置 |
EP1254861B1 (en) * | 2000-12-28 | 2008-01-30 | Sumco Corporation | Silicon continuous casting method |
WO2005026650A2 (en) * | 2003-09-15 | 2005-03-24 | Gamma Kdg Systems Sa | Plasma flare ir and uv emitting devices |
JP2005293945A (ja) | 2004-03-31 | 2005-10-20 | Tama Tlo Kk | プラズマ加熱装置およびノズル付き電極 |
CN101512042B (zh) * | 2006-07-07 | 2012-10-31 | 硅石技术责任有限公司 | 用于制造多晶硅的等离子体沉积装置和方法 |
TWI341872B (en) * | 2006-08-07 | 2011-05-11 | Ind Tech Res Inst | Plasma deposition apparatus and depositing method thereof |
US20100197070A1 (en) * | 2007-07-20 | 2010-08-05 | BP Corproation North America Inc. | Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals |
DE102008051801A1 (de) * | 2008-04-18 | 2009-10-22 | Plasma Treat Gmbh | Vorrichtung zum Behandeln einer inneren Oberfläche eines Werkstücks |
TWI407842B (zh) * | 2008-12-31 | 2013-09-01 | Ind Tech Res Inst | 大氣電漿大幅寬處理裝置 |
TWI494274B (zh) * | 2009-09-18 | 2015-08-01 | Ulvac Inc | 矽精製方法及矽精製裝置 |
TWI397617B (zh) * | 2010-02-12 | 2013-06-01 | Masahiro Hoshino | Metal silicon purification device |
-
2009
- 2009-12-16 KR KR1020090125556A patent/KR101581046B1/ko not_active IP Right Cessation
-
2010
- 2010-12-14 CN CN201080055193.0A patent/CN102639760B/zh not_active Expired - Fee Related
- 2010-12-14 JP JP2012541962A patent/JP5563097B2/ja not_active Expired - Fee Related
- 2010-12-14 US US13/510,889 patent/US8912463B2/en not_active Expired - Fee Related
- 2010-12-14 WO PCT/KR2010/008918 patent/WO2011074848A2/ko active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20110068548A (ko) | 2011-06-22 |
US8912463B2 (en) | 2014-12-16 |
JP2013512413A (ja) | 2013-04-11 |
WO2011074848A3 (ko) | 2011-11-10 |
US20120241438A1 (en) | 2012-09-27 |
CN102639760A (zh) | 2012-08-15 |
CN102639760B (zh) | 2015-04-29 |
WO2011074848A2 (ko) | 2011-06-23 |
KR101581046B1 (ko) | 2015-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101094823B1 (ko) | 석영 유리 도가니의 제조 방법과 장치, 및 석영 유리 도가니 | |
JP4773340B2 (ja) | 半導体単結晶製造装置 | |
US7682472B2 (en) | Method for casting polycrystalline silicon | |
JP2012512797A (ja) | 側壁を介した可変熱交換を備える溶融凝固炉 | |
KR101574749B1 (ko) | 단결정 제조용 상부히터, 단결정 제조장치 및 단결정 제조방법 | |
TW202227679A (zh) | 長晶爐 | |
US20070006916A1 (en) | Solar-cell polycrystalline silicon and method for producing the same | |
JP5563097B2 (ja) | プラズマアークトーチの位置調節装置 | |
US9410266B2 (en) | Process for producing multicrystalline silicon ingots by the induction method, and apparatus for carrying out the same | |
JP4664967B2 (ja) | シリコン鋳造装置およびシリコン基板の製造方法 | |
JP2002293526A (ja) | 多結晶シリコンの製造装置 | |
JP5763508B2 (ja) | 石英ガラスシリンダー材料の製造方法及びその製造装置 | |
JP5763510B2 (ja) | 石英ガラスシリンダー材料の製造方法及びその製造装置 | |
KR20130006166A (ko) | 태양전지용 고순도 다결정 실리콘 제작 장치 및 방법 | |
JP2001019593A (ja) | シリコン連続鋳造方法 | |
WO2012111850A1 (ja) | 多結晶ウェーハ及びその製造方法、並びに多結晶材料の鋳造方法 | |
JP2005162507A (ja) | 多結晶半導体インゴット製造装置、多結晶半導体インゴットの製造方法および多結晶半導体インゴット | |
JP5365617B2 (ja) | 半導体単結晶製造装置及び半導体単結晶の製造方法 | |
KR101032265B1 (ko) | 실리콘 연속 주조 장치 및 방법 | |
JP6759926B2 (ja) | 結晶育成装置 | |
CN116356421A (zh) | 单晶炉及其操作方法 | |
JP4120146B2 (ja) | 光導波路製造装置 | |
JP2013256417A (ja) | 単結晶育成装置 | |
JP2004238223A (ja) | 化合物半導体単結晶成長装置及び化合物半導体単結晶の製造方法 | |
JPS6330393A (ja) | 結晶製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140107 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140407 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140512 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140611 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5563097 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |