JP5558859B2 - 固体撮像装置および固体撮像装置の製造方法 - Google Patents

固体撮像装置および固体撮像装置の製造方法 Download PDF

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Publication number
JP5558859B2
JP5558859B2 JP2010033854A JP2010033854A JP5558859B2 JP 5558859 B2 JP5558859 B2 JP 5558859B2 JP 2010033854 A JP2010033854 A JP 2010033854A JP 2010033854 A JP2010033854 A JP 2010033854A JP 5558859 B2 JP5558859 B2 JP 5558859B2
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solid
state imaging
imaging device
photoelectric conversion
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JP2010033854A
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Japanese (ja)
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JP2011171511A5 (enExample
JP2011171511A (ja
Inventor
英明 ▲高▼田
徹 小泉
康生 山▲崎▼
達也 領木
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Canon Inc
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Canon Inc
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Priority to JP2010033854A priority Critical patent/JP5558859B2/ja
Priority to US13/029,046 priority patent/US8476102B2/en
Priority to CN2011100398903A priority patent/CN102163611B/zh
Publication of JP2011171511A publication Critical patent/JP2011171511A/ja
Publication of JP2011171511A5 publication Critical patent/JP2011171511A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors

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  • Solid State Image Pick-Up Elements (AREA)
JP2010033854A 2010-02-18 2010-02-18 固体撮像装置および固体撮像装置の製造方法 Expired - Fee Related JP5558859B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010033854A JP5558859B2 (ja) 2010-02-18 2010-02-18 固体撮像装置および固体撮像装置の製造方法
US13/029,046 US8476102B2 (en) 2010-02-18 2011-02-16 Solid state image pickup device and method for manufacturing solid state image pickup device
CN2011100398903A CN102163611B (zh) 2010-02-18 2011-02-18 固态图像拾取装置和用于制造固态图像拾取装置的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010033854A JP5558859B2 (ja) 2010-02-18 2010-02-18 固体撮像装置および固体撮像装置の製造方法

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JP2011171511A JP2011171511A (ja) 2011-09-01
JP2011171511A5 JP2011171511A5 (enExample) 2013-04-04
JP5558859B2 true JP5558859B2 (ja) 2014-07-23

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US (1) US8476102B2 (enExample)
JP (1) JP5558859B2 (enExample)
CN (1) CN102163611B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013098952A1 (ja) * 2011-12-27 2013-07-04 キヤノン株式会社 撮像装置
JP2013182943A (ja) * 2012-02-29 2013-09-12 Canon Inc 固体撮像装置の製造方法
JP6164951B2 (ja) * 2013-06-28 2017-07-19 キヤノン株式会社 光電変換装置の製造方法、光電変換装置、及び撮像システム
JP6285667B2 (ja) * 2013-09-03 2018-02-28 キヤノン株式会社 固体撮像装置の製造方法
JP6406911B2 (ja) * 2014-07-24 2018-10-17 キヤノン株式会社 撮像装置及び撮像装置の製造方法
JP2017195215A (ja) 2016-04-18 2017-10-26 キヤノン株式会社 撮像素子及びその製造方法
CN105895514A (zh) * 2016-04-21 2016-08-24 格科微电子（上海）有限公司 图像传感器芯片的形成方法
JP2019102494A (ja) * 2017-11-28 2019-06-24 キヤノン株式会社 光電変換装置およびその製造方法、機器
CN108321164A (zh) * 2018-02-28 2018-07-24 德淮半导体有限公司 图像传感器及其形成方法
US11152505B2 (en) * 2018-06-28 2021-10-19 Texas Instruments Incorporated Drain extended transistor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3341517B2 (ja) * 1995-02-09 2002-11-05 ソニー株式会社 電荷結合デバイス型の固体撮像素子およびその製造方法
US6690423B1 (en) * 1998-03-19 2004-02-10 Kabushiki Kaisha Toshiba Solid-state image pickup apparatus
JP3530159B2 (ja) * 2001-08-22 2004-05-24 松下電器産業株式会社 固体撮像装置およびその製造方法
JP3988023B2 (ja) * 2001-10-04 2007-10-10 ソニー株式会社 固体撮像素子の製造方法
JP2005268814A (ja) * 2002-06-27 2005-09-29 Canon Inc 固体撮像装置及び固体撮像装置を用いたカメラシステム
KR100603247B1 (ko) * 2003-12-31 2006-07-20 동부일렉트로닉스 주식회사 시모스 이미지 센서 및 그 제조방법
JP5230058B2 (ja) 2004-06-07 2013-07-10 キヤノン株式会社 固体撮像装置およびカメラ
US7605415B2 (en) * 2004-06-07 2009-10-20 Canon Kabushiki Kaisha Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring
JP4530747B2 (ja) * 2004-07-16 2010-08-25 富士通セミコンダクター株式会社 固体撮像装置及びその製造方法
KR100660275B1 (ko) * 2004-12-29 2006-12-20 동부일렉트로닉스 주식회사 씨모스 이미지 센서 화소의 전달 트랜지스터 및 그 제조방법
US7883909B2 (en) * 2006-12-28 2011-02-08 Texas Instruments Incorporated Method to measure ion beam angle
JP5328207B2 (ja) 2008-04-01 2013-10-30 キヤノン株式会社 固体撮像装置

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US20110198718A1 (en) 2011-08-18
JP2011171511A (ja) 2011-09-01
US8476102B2 (en) 2013-07-02
CN102163611A (zh) 2011-08-24
CN102163611B (zh) 2013-10-16

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