JP5552875B2 - 単結晶の製造方法および半導体ウェーハの製造方法 - Google Patents

単結晶の製造方法および半導体ウェーハの製造方法 Download PDF

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JP5552875B2
JP5552875B2 JP2010091352A JP2010091352A JP5552875B2 JP 5552875 B2 JP5552875 B2 JP 5552875B2 JP 2010091352 A JP2010091352 A JP 2010091352A JP 2010091352 A JP2010091352 A JP 2010091352A JP 5552875 B2 JP5552875 B2 JP 5552875B2
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fluctuation
single crystal
pulling
moving average
pulling speed
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JP2011219319A (ja
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大地 八木
匡彦 水田
建 濱田
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Sumco Corp
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JP2010091352A 2010-04-12 2010-04-12 単結晶の製造方法および半導体ウェーハの製造方法 Active JP5552875B2 (ja)

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JP2011219319A JP2011219319A (ja) 2011-11-04
JP2011219319A5 JP2011219319A5 (https=) 2013-05-02
JP5552875B2 true JP5552875B2 (ja) 2014-07-16

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Publication number Priority date Publication date Assignee Title
JP6409718B2 (ja) * 2014-09-08 2018-10-24 株式会社Sumco 単結晶の製造方法
JP6897497B2 (ja) * 2017-10-31 2021-06-30 株式会社Sumco シリコンブロックの品質判定方法、シリコンブロックの品質判定プログラム、およびシリコン単結晶の製造方法
JP6773011B2 (ja) * 2017-11-27 2020-10-21 株式会社Sumco シリコン単結晶のｂｍｄ評価方法およびシリコン単結晶の製造方法

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* Cited by examiner, † Cited by third party
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JP2726773B2 (ja) * 1991-06-10 1998-03-11 三菱マテリアル株式会社 シリコン単結晶引き上げ方法
JP2005015312A (ja) * 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
JP4792903B2 (ja) * 2005-10-04 2011-10-12 信越半導体株式会社 半導体ウエーハの製造方法及び半導体インゴットの切断位置決定システム

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