JP5551502B2 - 抵抗メモリの製造方法 - Google Patents
抵抗メモリの製造方法 Download PDFInfo
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- JP5551502B2 JP5551502B2 JP2010101210A JP2010101210A JP5551502B2 JP 5551502 B2 JP5551502 B2 JP 5551502B2 JP 2010101210 A JP2010101210 A JP 2010101210A JP 2010101210 A JP2010101210 A JP 2010101210A JP 5551502 B2 JP5551502 B2 JP 5551502B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 46
- 239000010949 copper Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 41
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002474 experimental method Methods 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 229910001773 titanium mineral Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
Description
[実験1]
まず、基板に白金膜(Pt膜)を形成し、Pt膜を抵抗メモリの下電極として使用する。その後、銅(Cu)ターゲットおよびシリコン酸化物(SiO2)ターゲットを有するスパッタリングチャンバー内の基板支持体に、上述した基板を設置する。
[実験2]
実験2は、ガスが4vol.%の酸素ガス(O2)および96vol.%のアルゴンガス(Ar)を含むこと以外は、実験1と同じ条件であり、Pt膜(下電極)、Cu‐SiO2層(可変抵抗層)、およびCu膜(上電極)を合わせて抵抗メモリを形成する。
[試験1]
図3に示すように、抵抗メモリに印加したバイアス電圧を変えて、実験1の抵抗メモリを高抵抗状態(HRS)と低抵抗状態(LRS)の間で切り換える。図3の下の曲線に示すように、バイアス電圧が0Vから増加すると、それに応じて、HRSのCu‐SiO2層を通過する電流が増加する。印加された電圧が高電圧値に達した時、電流が瞬時に跳ね上がり、この時、Cu‐SiO2層が瞬時にLRSに変わる。この変化を「セット(set)」と称す。図3の上の曲線に示すように、再度、印加した電圧が0Vから増加すると、それに応じて、新しく変化したLRSのCu‐SiO2層を通過する電流が増加する。印加した電圧が一定の値に達した時、電流が瞬時に下降し、この時、Cu‐SiO2層がLRSからHRSに変わる。この変化を「リセット(reset)」と称す。
[試験2]
抵抗メモリに印加したバイアス電圧を変えて、実験1の抵抗メモリをHRSとLRSの間で切り換えるが、ここでは、図4に示すように、2つの極性方向で操作を行う。すなわち、正バイアスと負バイアスを繰り返して操作を行う。
[試験3]
実験2の抵抗メモリに印加した電圧を変えて、HRSとLRSの間で切り換えを行うことによって、図5を得ることができる。図5からわかるように、実験2の抵抗メモリは、同じ極性方向でその状態を切り換えることができる。注意すべきこととして、ここでは正バイアスで操作を行うが、本発明により製造される抵抗メモリは、負バイアスで操作することもできる。
[試験4]
印加したバイアス電圧を変えて、実験2の抵抗メモリに対し2つの極性方向で前後に操作を行い、図6を得る。図6からわかるように、実験2の抵抗メモリは、二極性抵抗メモリとして使用することができる。
102 上電極
104 下電極
106 可変抵抗層
200〜210、700〜710 ステップ
Claims (10)
- 銅ターゲットおよびシリコン酸化物ターゲットを有するスパッタリングチャンバー内に基板を設置し、該基板の上に下電極を形成することと、
前記銅ターゲットおよび前記シリコン酸化物ターゲットを使用して同時スパッタリングプロセスを行い、可変抵抗層がCu‐SiO 2 層であり、前記下電極の表面に前記Cu‐SiO 2 層のCu/(Cu+Si)のモル百分率が1〜15%である可変抵抗層を沈積させることと、
前記可変抵抗層の上に上電極を形成することと
を含む抵抗メモリの製造方法。 - 前記銅ターゲットおよび前記シリコン酸化物ターゲットに印加された直流電圧またはラジオ周波電圧の仕事率が、互いに異なる請求項1記載の製造方法。
- 銅(Cu)およびシリコン酸化物(SiO2)から作られ、可変抵抗層がCu‐SiO 2 層であり、該Cu‐SiO 2 層のCu/(Cu+Si)のモル百分率が1〜15%である複合ターゲットを有するスパッタリングチャンバー内に基板を設置し、該基板の上に下電極を形成することと、
前記複合ターゲットを使用してスパッタリングプロセスを行い、前記下電極の表面に可変抵抗層を沈積させることと、
前記可変抵抗層の上に上電極を形成することと
を含む抵抗メモリの製造方法。 - 前記可変抵抗層の厚さが、10nm〜100nmの間である請求項1または3記載の抵抗メモリの製造方法。
- 前記スパッタリングチャンバーが、さらに、前記基板を支持するための基板支持体を備えた請求項1または3記載の抵抗メモリの製造方法。
- 前記同時スパッタリングプロセスを行っている間に、前記基板支持体を回転させることをさらに含む請求項5記載の抵抗メモリの製造方法。
- 前記同時スパッタリング/スパッタリングプロセスを行っている間に、前記基板を加熱することをさらに含む請求項1または3記載の抵抗メモリの製造方法。
- 前記同時スパッタリング/スパッタリングプロセスを行っている間、前記基板の温度が、25℃〜150℃の間である請求項1または3記載の抵抗メモリの製造方法。
- 前記同時スパッタリング/スパッタリングプロセスの圧力が、5×10-3Torr〜5×10-2Torrの間である請求項1または3記載の抵抗メモリの製造方法。
- 前記同時スパッタリング/スパッタリングプロセスのガスが、100vol.%のアルゴンガス、または0vol.%よりも大きく20vol.%以下の酸素ガスを含んだアルゴンガスを含む請求項1または3記載の抵抗メモリの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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TW98142142A TWI473209B (zh) | 2009-12-09 | 2009-12-09 | 電阻式記憶體的製造方法 |
TW098142142 | 2009-12-09 |
Publications (3)
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JP2011124528A JP2011124528A (ja) | 2011-06-23 |
JP2011124528A5 JP2011124528A5 (ja) | 2013-01-31 |
JP5551502B2 true JP5551502B2 (ja) | 2014-07-16 |
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JP2010101210A Expired - Fee Related JP5551502B2 (ja) | 2009-12-09 | 2010-04-26 | 抵抗メモリの製造方法 |
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US (1) | US8900421B2 (ja) |
JP (1) | JP5551502B2 (ja) |
KR (1) | KR101054465B1 (ja) |
TW (1) | TWI473209B (ja) |
Families Citing this family (6)
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JP5823833B2 (ja) | 2011-11-25 | 2015-11-25 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP6097028B2 (ja) * | 2012-07-18 | 2017-03-15 | 旭化成株式会社 | モールドの製造方法及びレジストパターンの形成方法 |
US8779409B2 (en) * | 2012-09-28 | 2014-07-15 | Hewlett-Packard Development Company, L.P. | Low energy memristors with engineered switching channel materials |
TWI567740B (zh) * | 2015-06-02 | 2017-01-21 | 國立成功大學 | 具複合材料配比之可變電阻絕緣層及其微電子元件應用 |
TWI611404B (zh) * | 2015-11-27 | 2018-01-11 | 國立高雄應用科技大學 | 未採用活性電極之電阻式記憶體及其製造方法 |
TWI600009B (zh) * | 2016-11-04 | 2017-09-21 | 財團法人工業技術研究院 | 可變電阻記憶體電路以及可變電阻記憶體電路之寫入方法 |
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US4591417A (en) * | 1983-12-27 | 1986-05-27 | Ford Motor Company | Tandem deposition of cermets |
US4973525A (en) * | 1988-10-14 | 1990-11-27 | The Johns Hopkins University | Metal-insulator composites having improved properties and method for their preparation |
GB2379795B (en) * | 2001-09-13 | 2004-02-18 | Univ Glasgow | Method of manufacturing optical devices and related improvements |
US6930909B2 (en) * | 2003-06-25 | 2005-08-16 | Micron Technology, Inc. | Memory device and methods of controlling resistance variation and resistance profile drift |
JP2005203389A (ja) | 2004-01-13 | 2005-07-28 | Sharp Corp | 不揮発性半導体記憶装置の製造方法 |
KR100593750B1 (ko) * | 2004-11-10 | 2006-06-28 | 삼성전자주식회사 | 이성분계 금속 산화막을 데이터 저장 물질막으로 채택하는교차점 비휘발성 기억소자 및 그 제조방법 |
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- 2010-04-07 KR KR1020100031964A patent/KR101054465B1/ko not_active IP Right Cessation
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US8900421B2 (en) | 2014-12-02 |
KR101054465B1 (ko) | 2011-08-04 |
JP2011124528A (ja) | 2011-06-23 |
TWI473209B (zh) | 2015-02-11 |
TW201120997A (en) | 2011-06-16 |
KR20110065263A (ko) | 2011-06-15 |
US20110132745A1 (en) | 2011-06-09 |
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LAPS | Cancellation because of no payment of annual fees |