JP5550294B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5550294B2 JP5550294B2 JP2009218265A JP2009218265A JP5550294B2 JP 5550294 B2 JP5550294 B2 JP 5550294B2 JP 2009218265 A JP2009218265 A JP 2009218265A JP 2009218265 A JP2009218265 A JP 2009218265A JP 5550294 B2 JP5550294 B2 JP 5550294B2
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- Prior art keywords
- signal line
- functional circuit
- circuit
- chip
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000012212 insulator Substances 0.000 claims description 77
- 238000007689 inspection Methods 0.000 claims description 31
- 230000006870 function Effects 0.000 description 91
- 230000002950 deficient Effects 0.000 description 39
- 239000000463 material Substances 0.000 description 21
- 238000012545 processing Methods 0.000 description 17
- 230000004044 response Effects 0.000 description 13
- 238000012360 testing method Methods 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 10
- 230000001678 irradiating effect Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 235000013305 food Nutrition 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003905 agrochemical Substances 0.000 description 1
- 235000013361 beverage Nutrition 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 244000144972 livestock Species 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
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- Design And Manufacture Of Integrated Circuits (AREA)
- Tests Of Electronic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009218265A JP5550294B2 (ja) | 2008-10-02 | 2009-09-22 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008257059 | 2008-10-02 | ||
| JP2008257059 | 2008-10-02 | ||
| JP2009218265A JP5550294B2 (ja) | 2008-10-02 | 2009-09-22 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010109337A JP2010109337A (ja) | 2010-05-13 |
| JP2010109337A5 JP2010109337A5 (https=) | 2012-10-25 |
| JP5550294B2 true JP5550294B2 (ja) | 2014-07-16 |
Family
ID=42298435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009218265A Expired - Fee Related JP5550294B2 (ja) | 2008-10-02 | 2009-09-22 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5550294B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6086781B2 (ja) * | 2013-03-28 | 2017-03-01 | 富士フイルム株式会社 | 有機半導体素子の製造方法 |
| JP6390418B2 (ja) * | 2014-12-24 | 2018-09-19 | 株式会社ソシオネクスト | 半導体装置、半導体装置の製造方法、及び半導体装置の識別方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0760853B2 (ja) * | 1984-07-18 | 1995-06-28 | テキサス インスツルメンツ インコ−ポレイテツド | レ−ザ・ビ−ムでプログラムし得る半導体装置と半導体装置の製法 |
| JPH01125951A (ja) * | 1987-11-11 | 1989-05-18 | Hitachi Ltd | トランジスタ回路装置 |
| JPH02295155A (ja) * | 1989-05-09 | 1990-12-06 | Nec Corp | 多層配線半導体装置 |
| JPH06112321A (ja) * | 1992-09-29 | 1994-04-22 | Matsushita Electron Corp | 半導体集積回路の接続法 |
| JP2006310663A (ja) * | 2005-04-28 | 2006-11-09 | Toshiba Corp | 演算処理装置 |
| JP2007081281A (ja) * | 2005-09-16 | 2007-03-29 | Matsushita Electric Ind Co Ltd | システムｌｓｉ |
-
2009
- 2009-09-22 JP JP2009218265A patent/JP5550294B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2010109337A (ja) | 2010-05-13 |
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