JP5548375B2 - 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 - Google Patents
荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 Download PDFInfo
- Publication number
- JP5548375B2 JP5548375B2 JP2009069566A JP2009069566A JP5548375B2 JP 5548375 B2 JP5548375 B2 JP 5548375B2 JP 2009069566 A JP2009069566 A JP 2009069566A JP 2009069566 A JP2009069566 A JP 2009069566A JP 5548375 B2 JP5548375 B2 JP 5548375B2
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- Prior art keywords
- charged particle
- particle beam
- electrode
- film
- deflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002245 particle Substances 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 12
- 239000000463 material Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 239000012811 non-conductive material Substances 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 description 19
- 238000007493 shaping process Methods 0.000 description 14
- 238000007747 plating Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002039 particle-beam lithography Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009069566A JP5548375B2 (ja) | 2009-03-23 | 2009-03-23 | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| US12/714,735 US8148698B2 (en) | 2009-03-23 | 2010-03-01 | Charged particle beam writing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009069566A JP5548375B2 (ja) | 2009-03-23 | 2009-03-23 | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010225728A JP2010225728A (ja) | 2010-10-07 |
| JP2010225728A5 JP2010225728A5 (enExample) | 2012-01-26 |
| JP5548375B2 true JP5548375B2 (ja) | 2014-07-16 |
Family
ID=42736701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009069566A Active JP5548375B2 (ja) | 2009-03-23 | 2009-03-23 | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8148698B2 (enExample) |
| JP (1) | JP5548375B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102685956B1 (ko) * | 2019-08-20 | 2024-07-19 | 가부시키가이샤 뉴플레어 테크놀로지 | 묘화 장치 및 편향기 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5689047B2 (ja) * | 2011-10-12 | 2015-03-25 | 東京エレクトロン株式会社 | 基体処理システム用の基体搬送装置 |
| JP5964067B2 (ja) * | 2012-02-02 | 2016-08-03 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置 |
| JP6080540B2 (ja) * | 2012-12-26 | 2017-02-15 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置 |
| JP2018098268A (ja) | 2016-12-08 | 2018-06-21 | 株式会社ニューフレアテクノロジー | ブランキング偏向器及びマルチ荷電粒子ビーム描画装置 |
| CN119846917A (zh) * | 2025-03-11 | 2025-04-18 | 中国电子科技集团公司第四十八研究所 | 一种可变成型束电子束曝光装置及曝光方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4736139A (en) * | 1984-11-19 | 1988-04-05 | Matsushita Electric Industrial Co., Ltd. | Flat type cathode ray tube and color image display apparatus utilizing same |
| US4661709A (en) * | 1985-06-28 | 1987-04-28 | Control Data Corporation | Modular all-electrostatic electron-optical column and assembly of said columns into an array and method of manufacture |
| JPH06105599B2 (ja) * | 1986-03-18 | 1994-12-21 | 富士通株式会社 | 同軸型静電偏向器 |
| JPH09293472A (ja) * | 1996-04-26 | 1997-11-11 | Fujitsu Ltd | 荷電粒子ビーム露光装置、その露光方法及びその製造方法 |
| JP3057042B2 (ja) * | 1997-11-18 | 2000-06-26 | 株式会社東芝 | 荷電粒子ビーム描画用ブランキング装置 |
| JP2000011937A (ja) | 1998-06-26 | 2000-01-14 | Advantest Corp | 電子ビーム露光装置の静電偏向器 |
| JP2000260686A (ja) * | 1999-03-08 | 2000-09-22 | Toshiba Corp | 露光方法及び露光装置 |
| JP3785085B2 (ja) * | 2000-12-01 | 2006-06-14 | 株式会社東芝 | 静電偏向器及びその製造方法、静電レンズ及びその製造方法、電子ビーム照射装置及びそのクリーニング方法 |
| JP4801982B2 (ja) | 2005-11-30 | 2011-10-26 | 株式会社ニューフレアテクノロジー | 荷電ビーム描画方法及び描画装置 |
| US7521687B2 (en) * | 2006-03-30 | 2009-04-21 | Tokyo Electron Limited | Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate |
| JP2007294850A (ja) * | 2006-03-30 | 2007-11-08 | Tokyo Electron Ltd | 静電偏向器及び電子線照射装置及び基板処理装置及び基板処理方法及び基板の製造方法 |
-
2009
- 2009-03-23 JP JP2009069566A patent/JP5548375B2/ja active Active
-
2010
- 2010-03-01 US US12/714,735 patent/US8148698B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102685956B1 (ko) * | 2019-08-20 | 2024-07-19 | 가부시키가이샤 뉴플레어 테크놀로지 | 묘화 장치 및 편향기 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010225728A (ja) | 2010-10-07 |
| US20100237261A1 (en) | 2010-09-23 |
| US8148698B2 (en) | 2012-04-03 |
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