JP5533335B2 - 処理装置及びその動作方法 - Google Patents

処理装置及びその動作方法 Download PDF

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Publication number
JP5533335B2
JP5533335B2 JP2010144572A JP2010144572A JP5533335B2 JP 5533335 B2 JP5533335 B2 JP 5533335B2 JP 2010144572 A JP2010144572 A JP 2010144572A JP 2010144572 A JP2010144572 A JP 2010144572A JP 5533335 B2 JP5533335 B2 JP 5533335B2
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JP
Japan
Prior art keywords
rotating
levitation
processing apparatus
rotation
electromagnet
Prior art date
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Active
Application number
JP2010144572A
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English (en)
Japanese (ja)
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JP2011139015A (ja
JP2011139015A5 (enExample
Inventor
正道 野村
建次郎 小泉
繁 河西
澄 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Priority to JP2010144572A priority Critical patent/JP5533335B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US13/386,572 priority patent/US20120118504A1/en
Priority to KR1020127001941A priority patent/KR20120030564A/ko
Priority to PCT/JP2010/062243 priority patent/WO2011010661A1/ja
Priority to TW099123959A priority patent/TW201120985A/zh
Priority to CN2010800331377A priority patent/CN102473670A/zh
Publication of JP2011139015A publication Critical patent/JP2011139015A/ja
Publication of JP2011139015A5 publication Critical patent/JP2011139015A5/ja
Application granted granted Critical
Publication of JP5533335B2 publication Critical patent/JP5533335B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2010144572A 2009-07-22 2010-06-25 処理装置及びその動作方法 Active JP5533335B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010144572A JP5533335B2 (ja) 2009-07-22 2010-06-25 処理装置及びその動作方法
KR1020127001941A KR20120030564A (ko) 2009-07-22 2010-07-21 처리 장치 및 그 동작 방법
PCT/JP2010/062243 WO2011010661A1 (ja) 2009-07-22 2010-07-21 処理装置及びその動作方法
TW099123959A TW201120985A (en) 2009-07-22 2010-07-21 Treatment device and method for operating same
US13/386,572 US20120118504A1 (en) 2009-07-22 2010-07-21 Processing apparatus and method for operating same
CN2010800331377A CN102473670A (zh) 2009-07-22 2010-07-21 处理装置及其动作方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009171558 2009-07-22
JP2009171558 2009-07-22
JP2009274987 2009-12-02
JP2009274987 2009-12-02
JP2010144572A JP5533335B2 (ja) 2009-07-22 2010-06-25 処理装置及びその動作方法

Publications (3)

Publication Number Publication Date
JP2011139015A JP2011139015A (ja) 2011-07-14
JP2011139015A5 JP2011139015A5 (enExample) 2013-05-23
JP5533335B2 true JP5533335B2 (ja) 2014-06-25

Family

ID=43499133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010144572A Active JP5533335B2 (ja) 2009-07-22 2010-06-25 処理装置及びその動作方法

Country Status (6)

Country Link
US (1) US20120118504A1 (enExample)
JP (1) JP5533335B2 (enExample)
KR (1) KR20120030564A (enExample)
CN (1) CN102473670A (enExample)
TW (1) TW201120985A (enExample)
WO (1) WO2011010661A1 (enExample)

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US9548223B2 (en) * 2011-12-23 2017-01-17 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
JP5937850B2 (ja) * 2012-02-29 2016-06-22 株式会社ブリヂストン 研削方法
JP5973299B2 (ja) * 2012-09-25 2016-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5973300B2 (ja) * 2012-09-25 2016-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6010398B2 (ja) * 2012-08-31 2016-10-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR101512560B1 (ko) 2012-08-31 2015-04-15 가부시키가이샤 스크린 홀딩스 기판처리장치
JP5936505B2 (ja) * 2012-09-25 2016-06-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN104425331B (zh) * 2013-09-09 2017-09-29 北京北方微电子基地设备工艺研究中心有限责任公司 转盘定位装置、装载传输系统及等离子体加工设备
US10600673B2 (en) * 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
CN107022754B (zh) * 2016-02-02 2020-06-02 东京毅力科创株式会社 基板处理装置
JP6559347B2 (ja) * 2016-06-23 2019-08-14 株式会社アルバック 保持装置
CN106637141B (zh) * 2017-01-20 2019-08-27 广东爱康太阳能科技有限公司 一种太阳能电池镀膜石墨舟片及石墨舟
JP6763321B2 (ja) * 2017-03-01 2020-09-30 東京エレクトロン株式会社 自転検出用冶具、基板処理装置及び基板処理装置の運転方法
EP3413340B1 (en) * 2017-06-08 2021-11-17 Brooks Automation (Germany) GmbH Method for inspecting a container and inspection system
SG11202103808YA (en) * 2018-11-05 2021-05-28 Applied Materials Inc Magnetic housing systems
KR102721972B1 (ko) * 2019-07-08 2024-10-29 삼성전자주식회사 회전체 모듈 및 이를 구비하는 화학 기계적 연마 장치
TW202139347A (zh) * 2020-03-04 2021-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、對準夾具、及對準方法
CN115679294A (zh) * 2021-07-23 2023-02-03 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备
KR102766145B1 (ko) * 2021-12-16 2025-02-12 에이피시스템 주식회사 자기부상 회전 장치 및 자기부상 회전 방법
KR102424176B1 (ko) * 2021-12-17 2022-07-25 김상조 자기부상 회전 장치 및 이를 포함하는 진공 처리 장치

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Also Published As

Publication number Publication date
KR20120030564A (ko) 2012-03-28
JP2011139015A (ja) 2011-07-14
CN102473670A (zh) 2012-05-23
WO2011010661A1 (ja) 2011-01-27
US20120118504A1 (en) 2012-05-17
TW201120985A (en) 2011-06-16

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