JP5530718B2 - 実流量の妥当性確認の実施方法 - Google Patents
実流量の妥当性確認の実施方法 Download PDFInfo
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- JP5530718B2 JP5530718B2 JP2009537333A JP2009537333A JP5530718B2 JP 5530718 B2 JP5530718 B2 JP 5530718B2 JP 2009537333 A JP2009537333 A JP 2009537333A JP 2009537333 A JP2009537333 A JP 2009537333A JP 5530718 B2 JP5530718 B2 JP 5530718B2
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- flow rate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
- G01F25/15—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters specially adapted for gas meters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
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- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Volume Flow (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Flow Control (AREA)
Description
前述のように、較正係数は、式1のように、一組の実測上流圧力値の平均値と一組の最良圧力値の平均値との比を計算することによって決定される。
較正係数=最良圧力測定値/平均上流圧力測定値=ΔPg/Pm 式1
オリフィス(ガス)=mPgas(1±ΔPg/Pm)−λ 式2
(較正予測流量−MFC流量)/MFC流量=[(mPgas(1±ΔPg/Pm)−λ)/MFC流量]−1 式3
ある実施形態において、正確なガス表のデータは実験的方法によって計算することができる。図3は、ある実施形態において、実験的方法に基づく一組の正確なガス表を作成するステップを説明する簡単なフローチャートを示す。
Claims (5)
- 質量流量コントローラ(MFC)で制御されるガス流量供給システムによってガスを反応室の上流にあるオリフィスに供給し、
前記ガスを加圧して前記オリフィス内にチョーク流れ状態を作り出し、
前記反応室に供給される前記ガスの一組の上流圧力値のみを、前記オリフィスの上流に定置される一組の圧力センサによって測定し、
較正係数は前記一組の上流圧力値の平均値と一組の最良上流圧力値の平均値との比であり、
前記較正係数は前記一組の上流圧力値に適用されて補正圧力値を決定しており、
さらに、前記最良上流圧力値は指示流量に関連する圧力値を表わし、前記指示流量は前記MFCによって指示される流量であって、
前記実ガス流量は前記補正圧力値を正確なガス表と比較することによって決定され、前記正確なガス表は実ガスの性質と、正確なMFCと、精密オリフィスとに基づく最良上流圧力値及び流量値の表を表わしていることを特徴とするプラズマ処理システムの反応室における実ガス流量を決定する方法。 - 前記一組の較正係数の各較正係数は一組のオリフィスの個々のオリフィスと関連しており、前記各較正係数は前記個々のオリフィスの直径と形状の少なくとも一方に依存している、請求項1に記載の方法。
- 前記指示流量を前記実ガス流量と前記指示流量との差に分けることによって前記MFCに対する誤差のパーセンテージを計算することをさらに含む、請求項1に記載の方法。
- 前記誤差のパーセンテージは前記MFCを調整するために適用される、請求項3に記載の方法。
- 前記一組の圧力センサは一組の圧力計である、請求項1に記載の方法。
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86640606P | 2006-11-17 | 2006-11-17 | |
| US60/866,406 | 2006-11-17 | ||
| US11/938,171 | 2007-11-09 | ||
| US11/938,171 US7822570B2 (en) | 2006-11-17 | 2007-11-09 | Methods for performing actual flow verification |
| PCT/US2007/084724 WO2008064044A1 (en) | 2006-11-17 | 2007-11-14 | Methods for performing actual flow verification |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013268982A Division JP2014089205A (ja) | 2006-11-17 | 2013-12-26 | 実流量の妥当性確認の実施方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010510491A JP2010510491A (ja) | 2010-04-02 |
| JP5530718B2 true JP5530718B2 (ja) | 2014-06-25 |
Family
ID=39415594
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009537333A Active JP5530718B2 (ja) | 2006-11-17 | 2007-11-14 | 実流量の妥当性確認の実施方法 |
| JP2013268982A Pending JP2014089205A (ja) | 2006-11-17 | 2013-12-26 | 実流量の妥当性確認の実施方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013268982A Pending JP2014089205A (ja) | 2006-11-17 | 2013-12-26 | 実流量の妥当性確認の実施方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7822570B2 (ja) |
| JP (2) | JP5530718B2 (ja) |
| KR (1) | KR101472146B1 (ja) |
| CN (1) | CN101536159B (ja) |
| SG (1) | SG176489A1 (ja) |
| WO (1) | WO2008064044A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014089205A (ja) * | 2006-11-17 | 2014-05-15 | Lam Research Corporation | 実流量の妥当性確認の実施方法 |
| JP2018181102A (ja) * | 2017-04-18 | 2018-11-15 | 東京エレクトロン株式会社 | 流量制御器の出力流量を求める方法及び被処理体を処理する方法 |
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| CN101727111B (zh) * | 2008-10-15 | 2011-09-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种腔室压力控制方法、装置及控制系统 |
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- 2007-11-14 WO PCT/US2007/084724 patent/WO2008064044A1/en not_active Ceased
- 2007-11-14 JP JP2009537333A patent/JP5530718B2/ja active Active
- 2007-11-14 SG SG2011084670A patent/SG176489A1/en unknown
- 2007-11-14 KR KR1020097010085A patent/KR101472146B1/ko active Active
- 2007-11-14 CN CN2007800427823A patent/CN101536159B/zh active Active
-
2010
- 2010-09-21 US US12/887,218 patent/US8150646B2/en active Active
-
2012
- 2012-03-30 US US13/436,705 patent/US8521461B2/en active Active
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2013
- 2013-12-26 JP JP2013268982A patent/JP2014089205A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014089205A (ja) * | 2006-11-17 | 2014-05-15 | Lam Research Corporation | 実流量の妥当性確認の実施方法 |
| JP2018181102A (ja) * | 2017-04-18 | 2018-11-15 | 東京エレクトロン株式会社 | 流量制御器の出力流量を求める方法及び被処理体を処理する方法 |
| US11231313B2 (en) | 2017-04-18 | 2022-01-25 | Tokyo Electron Limited | Method of obtaining output flow rate of flow rate controller and method of processing workpiece |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101536159B (zh) | 2011-12-28 |
| CN101536159A (zh) | 2009-09-16 |
| SG176489A1 (en) | 2011-12-29 |
| US20080115560A1 (en) | 2008-05-22 |
| US20120247581A1 (en) | 2012-10-04 |
| KR101472146B1 (ko) | 2014-12-12 |
| WO2008064044A1 (en) | 2008-05-29 |
| US20110029268A1 (en) | 2011-02-03 |
| US8150646B2 (en) | 2012-04-03 |
| US7822570B2 (en) | 2010-10-26 |
| US8521461B2 (en) | 2013-08-27 |
| JP2014089205A (ja) | 2014-05-15 |
| JP2010510491A (ja) | 2010-04-02 |
| KR20090080529A (ko) | 2009-07-24 |
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