JP5530718B2 - 実流量の妥当性確認の実施方法 - Google Patents
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- JP5530718B2 JP5530718B2 JP2009537333A JP2009537333A JP5530718B2 JP 5530718 B2 JP5530718 B2 JP 5530718B2 JP 2009537333 A JP2009537333 A JP 2009537333A JP 2009537333 A JP2009537333 A JP 2009537333A JP 5530718 B2 JP5530718 B2 JP 5530718B2
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- 238000000034 method Methods 0.000 claims description 84
- 238000011144 upstream manufacturing Methods 0.000 claims description 66
- 238000006243 chemical reaction Methods 0.000 claims description 34
- 238000012545 processing Methods 0.000 claims description 8
- 230000001419 dependent effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 102
- 230000008569 process Effects 0.000 description 15
- 238000012360 testing method Methods 0.000 description 13
- 238000009530 blood pressure measurement Methods 0.000 description 7
- 238000005094 computer simulation Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 238000010200 validation analysis Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
- G01F25/15—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters specially adapted for gas meters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Fluid Mechanics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Measuring Volume Flow (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Flow Control (AREA)
Description
前述のように、較正係数は、式1のように、一組の実測上流圧力値の平均値と一組の最良圧力値の平均値との比を計算することによって決定される。
較正係数=最良圧力測定値/平均上流圧力測定値=ΔPg/Pm 式1
オリフィス(ガス)=mPgas(1±ΔPg/Pm)−λ 式2
(較正予測流量−MFC流量)/MFC流量=[(mPgas(1±ΔPg/Pm)−λ)/MFC流量]−1 式3
ある実施形態において、正確なガス表のデータは実験的方法によって計算することができる。図3は、ある実施形態において、実験的方法に基づく一組の正確なガス表を作成するステップを説明する簡単なフローチャートを示す。
Claims (5)
- 質量流量コントローラ(MFC)で制御されるガス流量供給システムによってガスを反応室の上流にあるオリフィスに供給し、
前記ガスを加圧して前記オリフィス内にチョーク流れ状態を作り出し、
前記反応室に供給される前記ガスの一組の上流圧力値のみを、前記オリフィスの上流に定置される一組の圧力センサによって測定し、
較正係数は前記一組の上流圧力値の平均値と一組の最良上流圧力値の平均値との比であり、
前記較正係数は前記一組の上流圧力値に適用されて補正圧力値を決定しており、
さらに、前記最良上流圧力値は指示流量に関連する圧力値を表わし、前記指示流量は前記MFCによって指示される流量であって、
前記実ガス流量は前記補正圧力値を正確なガス表と比較することによって決定され、前記正確なガス表は実ガスの性質と、正確なMFCと、精密オリフィスとに基づく最良上流圧力値及び流量値の表を表わしていることを特徴とするプラズマ処理システムの反応室における実ガス流量を決定する方法。 - 前記一組の較正係数の各較正係数は一組のオリフィスの個々のオリフィスと関連しており、前記各較正係数は前記個々のオリフィスの直径と形状の少なくとも一方に依存している、請求項1に記載の方法。
- 前記指示流量を前記実ガス流量と前記指示流量との差に分けることによって前記MFCに対する誤差のパーセンテージを計算することをさらに含む、請求項1に記載の方法。
- 前記誤差のパーセンテージは前記MFCを調整するために適用される、請求項3に記載の方法。
- 前記一組の圧力センサは一組の圧力計である、請求項1に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86640606P | 2006-11-17 | 2006-11-17 | |
US60/866,406 | 2006-11-17 | ||
US11/938,171 | 2007-11-09 | ||
US11/938,171 US7822570B2 (en) | 2006-11-17 | 2007-11-09 | Methods for performing actual flow verification |
PCT/US2007/084724 WO2008064044A1 (en) | 2006-11-17 | 2007-11-14 | Methods for performing actual flow verification |
Related Child Applications (1)
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JP2013268982A Division JP2014089205A (ja) | 2006-11-17 | 2013-12-26 | 実流量の妥当性確認の実施方法 |
Publications (2)
Publication Number | Publication Date |
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JP2010510491A JP2010510491A (ja) | 2010-04-02 |
JP5530718B2 true JP5530718B2 (ja) | 2014-06-25 |
Family
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JP2009537333A Active JP5530718B2 (ja) | 2006-11-17 | 2007-11-14 | 実流量の妥当性確認の実施方法 |
JP2013268982A Pending JP2014089205A (ja) | 2006-11-17 | 2013-12-26 | 実流量の妥当性確認の実施方法 |
Family Applications After (1)
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JP2013268982A Pending JP2014089205A (ja) | 2006-11-17 | 2013-12-26 | 実流量の妥当性確認の実施方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7822570B2 (ja) |
JP (2) | JP5530718B2 (ja) |
KR (1) | KR101472146B1 (ja) |
CN (1) | CN101536159B (ja) |
SG (1) | SG176489A1 (ja) |
WO (1) | WO2008064044A1 (ja) |
Cited By (2)
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JP2014089205A (ja) * | 2006-11-17 | 2014-05-15 | Lam Research Corporation | 実流量の妥当性確認の実施方法 |
US11231313B2 (en) | 2017-04-18 | 2022-01-25 | Tokyo Electron Limited | Method of obtaining output flow rate of flow rate controller and method of processing workpiece |
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2007
- 2007-11-09 US US11/938,171 patent/US7822570B2/en active Active
- 2007-11-14 WO PCT/US2007/084724 patent/WO2008064044A1/en active Application Filing
- 2007-11-14 SG SG2011084670A patent/SG176489A1/en unknown
- 2007-11-14 CN CN2007800427823A patent/CN101536159B/zh active Active
- 2007-11-14 JP JP2009537333A patent/JP5530718B2/ja active Active
- 2007-11-14 KR KR1020097010085A patent/KR101472146B1/ko active IP Right Grant
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2010
- 2010-09-21 US US12/887,218 patent/US8150646B2/en active Active
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014089205A (ja) * | 2006-11-17 | 2014-05-15 | Lam Research Corporation | 実流量の妥当性確認の実施方法 |
US11231313B2 (en) | 2017-04-18 | 2022-01-25 | Tokyo Electron Limited | Method of obtaining output flow rate of flow rate controller and method of processing workpiece |
Also Published As
Publication number | Publication date |
---|---|
SG176489A1 (en) | 2011-12-29 |
KR101472146B1 (ko) | 2014-12-12 |
US20120247581A1 (en) | 2012-10-04 |
KR20090080529A (ko) | 2009-07-24 |
US8150646B2 (en) | 2012-04-03 |
WO2008064044A1 (en) | 2008-05-29 |
US20110029268A1 (en) | 2011-02-03 |
US7822570B2 (en) | 2010-10-26 |
US20080115560A1 (en) | 2008-05-22 |
CN101536159B (zh) | 2011-12-28 |
CN101536159A (zh) | 2009-09-16 |
US8521461B2 (en) | 2013-08-27 |
JP2014089205A (ja) | 2014-05-15 |
JP2010510491A (ja) | 2010-04-02 |
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