JP5523662B2 - 研磨液及び研磨方法 - Google Patents

研磨液及び研磨方法 Download PDF

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Publication number
JP5523662B2
JP5523662B2 JP2007247936A JP2007247936A JP5523662B2 JP 5523662 B2 JP5523662 B2 JP 5523662B2 JP 2007247936 A JP2007247936 A JP 2007247936A JP 2007247936 A JP2007247936 A JP 2007247936A JP 5523662 B2 JP5523662 B2 JP 5523662B2
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JP
Japan
Prior art keywords
acid
polishing
group
polishing liquid
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007247936A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009081199A (ja
Inventor
上村  哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2007247936A priority Critical patent/JP5523662B2/ja
Priority to KR1020080080902A priority patent/KR101515837B1/ko
Priority to TW097134651A priority patent/TWI445809B/zh
Publication of JP2009081199A publication Critical patent/JP2009081199A/ja
Application granted granted Critical
Publication of JP5523662B2 publication Critical patent/JP5523662B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2007247936A 2007-09-25 2007-09-25 研磨液及び研磨方法 Active JP5523662B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007247936A JP5523662B2 (ja) 2007-09-25 2007-09-25 研磨液及び研磨方法
KR1020080080902A KR101515837B1 (ko) 2007-09-25 2008-08-19 연마액 및 연마 방법
TW097134651A TWI445809B (zh) 2007-09-25 2008-09-10 研磨液及研磨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007247936A JP5523662B2 (ja) 2007-09-25 2007-09-25 研磨液及び研磨方法

Publications (2)

Publication Number Publication Date
JP2009081199A JP2009081199A (ja) 2009-04-16
JP5523662B2 true JP5523662B2 (ja) 2014-06-18

Family

ID=40655754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007247936A Active JP5523662B2 (ja) 2007-09-25 2007-09-25 研磨液及び研磨方法

Country Status (3)

Country Link
JP (1) JP5523662B2 (zh)
KR (1) KR101515837B1 (zh)
TW (1) TWI445809B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5345515B2 (ja) * 2009-12-18 2013-11-20 昭和電工株式会社 磁気記録媒体の製造方法
JP2012121086A (ja) * 2010-12-07 2012-06-28 Yokkaichi Chem Co Ltd 研磨用添加剤及び高分散性研磨スラリー
JP6435689B2 (ja) * 2014-07-25 2018-12-12 Agc株式会社 研磨剤と研磨方法、および研磨用添加液
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4206233B2 (ja) * 2002-07-22 2009-01-07 旭硝子株式会社 研磨剤および研磨方法
JP2005268664A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005142597A (ja) * 2005-02-16 2005-06-02 Hitachi Chem Co Ltd 金属用研磨液及びそれを用いた研磨方法
JP2007088024A (ja) * 2005-09-20 2007-04-05 Fujifilm Corp 研磨方法
JP2007194335A (ja) * 2006-01-18 2007-08-02 Fujifilm Corp 化学的機械的研磨方法
JP2007207908A (ja) * 2006-01-31 2007-08-16 Fujifilm Corp バリア層用研磨液
JP2007227446A (ja) * 2006-02-21 2007-09-06 Fujifilm Corp バリア用研磨液及び研磨方法

Also Published As

Publication number Publication date
KR101515837B1 (ko) 2015-05-04
TW200914595A (en) 2009-04-01
JP2009081199A (ja) 2009-04-16
TWI445809B (zh) 2014-07-21
KR20090031813A (ko) 2009-03-30

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