JP5523219B2 - セレン／第１ｂ族インク、並びにその製造方法および使用方法 - Google Patents

セレン／第１ｂ族インク、並びにその製造方法および使用方法 Download PDF

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Publication number
JP5523219B2
JP5523219B2 JP2010145559A JP2010145559A JP5523219B2 JP 5523219 B2 JP5523219 B2 JP 5523219B2 JP 2010145559 A JP2010145559 A JP 2010145559A JP 2010145559 A JP2010145559 A JP 2010145559A JP 5523219 B2 JP5523219 B2 JP 5523219B2
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JP
Japan
Prior art keywords
selenium
group
ink
component
substrate
Prior art date
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Active
Application number
JP2010145559A
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English (en)
Japanese (ja)
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JP2011088808A5 (enExample
JP2011088808A (ja
Inventor
デービッド・モズレー
ケビン・カルジア
チャールズ・シュマンダ
デービッド・エル・トーセン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Rohm and Haas Electronic Materials LLC, DuPont Electronic Materials International LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2011088808A publication Critical patent/JP2011088808A/ja
Publication of JP2011088808A5 publication Critical patent/JP2011088808A5/ja
Application granted granted Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/32—Inkjet printing inks characterised by colouring agents
    • C09D11/322—Pigment inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Photovoltaic Devices (AREA)
JP2010145559A 2009-09-28 2010-06-25 セレン／第１ｂ族インク、並びにその製造方法および使用方法 Active JP5523219B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/568,206 US8309179B2 (en) 2009-09-28 2009-09-28 Selenium/group 1b ink and methods of making and using same
US12/568,206 2009-09-28

Publications (3)

Publication Number Publication Date
JP2011088808A JP2011088808A (ja) 2011-05-06
JP2011088808A5 JP2011088808A5 (enExample) 2013-07-11
JP5523219B2 true JP5523219B2 (ja) 2014-06-18

Family

ID=43569539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010145559A Active JP5523219B2 (ja) 2009-09-28 2010-06-25 セレン／第１ｂ族インク、並びにその製造方法および使用方法

Country Status (6)

Country Link
US (2) US8309179B2 (enExample)
EP (1) EP2305600B1 (enExample)
JP (1) JP5523219B2 (enExample)
KR (1) KR101199031B1 (enExample)
CN (1) CN102031520B (enExample)
TW (1) TWI431073B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG178227A1 (en) * 2009-08-04 2012-03-29 Precursor Energetics Inc Polymeric precursors for cis and cigs photovoltaics
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
WO2012075259A1 (en) * 2010-12-03 2012-06-07 E. I. Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
US20120282721A1 (en) * 2011-05-06 2012-11-08 Yueh-Chun Liao Method for forming Chalcogenide Semiconductor Film and Photovoltaic Device
US8771555B2 (en) * 2011-05-06 2014-07-08 Neo Solar Power Corp. Ink composition
KR20140053962A (ko) * 2011-06-17 2014-05-08 프리커서 에너제틱스, 인코퍼레이티드. 광기전체를 위한 침착 방법
JP5536153B2 (ja) * 2011-09-16 2014-07-02 新日光能源科技股▲ふん▼有限公司 カルコゲナイド半導体膜の形成方法及び光起電力装置
JP2013064108A (ja) * 2011-09-16 2013-04-11 Delsolar Co Ltd インク組成物及びその形成方法
EP2647675A2 (en) * 2012-04-02 2013-10-09 Neo Solar Power Corp. Method for forming an ink
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
CN105308760B (zh) * 2013-06-03 2019-06-18 东京应化工业株式会社 络合物溶液、光吸收层及太阳能电池的制造方法
US9842733B2 (en) 2013-06-11 2017-12-12 Imec Vzw Method for dissolving chalcogen elements and metal chalcogenides in non-hazardous solvents
US8999746B2 (en) * 2013-08-08 2015-04-07 Tokyo Ohka Kogyo Co., Ltd. Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell
TWI527821B (zh) * 2013-10-16 2016-04-01 國立中山大學 銀化合物、銀墨水及可撓式基板之噴印方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5176744A (en) * 1991-08-09 1993-01-05 Microelectronics Computer & Technology Corp. Solution for direct copper writing
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6770122B2 (en) * 2001-12-12 2004-08-03 E. I. Du Pont De Nemours And Company Copper deposition using copper formate complexes
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
DE10360046A1 (de) * 2003-12-18 2005-07-21 Basf Ag Kupfer(l)formiatkomplexe
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
EP1778618B1 (en) * 2004-07-19 2013-12-25 PhilERA New Zealand Limited Synthesis of triethylenetetramines
US8057850B2 (en) 2006-11-09 2011-11-15 Alliance For Sustainable Energy, Llc Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
EP2101931B1 (en) 2006-11-09 2015-05-13 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
KR101030780B1 (ko) 2007-11-14 2011-04-27 성균관대학교산학협력단 Ⅰ－ⅲ－ⅵ２ 나노입자의 제조방법 및 다결정 광흡수층박막의 제조방법
US20090260670A1 (en) * 2008-04-18 2009-10-22 Xiao-Chang Charles Li Precursor ink for producing IB-IIIA-VIA semiconductors
US20110076798A1 (en) * 2009-09-28 2011-03-31 Rohm And Haas Electronic Materials Llc Dichalcogenide ink containing selenium and methods of making and using same
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same

Also Published As

Publication number Publication date
US8563088B2 (en) 2013-10-22
US8309179B2 (en) 2012-11-13
CN102031520A (zh) 2011-04-27
EP2305600A1 (en) 2011-04-06
KR20110034535A (ko) 2011-04-05
CN102031520B (zh) 2013-11-06
TWI431073B (zh) 2014-03-21
JP2011088808A (ja) 2011-05-06
US20130040419A1 (en) 2013-02-14
EP2305600B1 (en) 2014-03-19
US20110076799A1 (en) 2011-03-31
KR101199031B1 (ko) 2012-11-08
TW201111451A (en) 2011-04-01

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