JP5518338B2 - 加工対象物のナノトポロジを評価するためのウェハ両面グラインダ及び方法 - Google Patents

加工対象物のナノトポロジを評価するためのウェハ両面グラインダ及び方法 Download PDF

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Publication number
JP5518338B2
JP5518338B2 JP2008553448A JP2008553448A JP5518338B2 JP 5518338 B2 JP5518338 B2 JP 5518338B2 JP 2008553448 A JP2008553448 A JP 2008553448A JP 2008553448 A JP2008553448 A JP 2008553448A JP 5518338 B2 JP5518338 B2 JP 5518338B2
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Japan
Prior art keywords
workpiece
wafer
sensor
hydraulic
nanotopology
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JP2008553448A
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English (en)
Japanese (ja)
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JP2009525621A (ja
JP2009525621A5 (enExample
Inventor
サミート・エス・バガヴァット
ミリンド・エス・バガヴァット
ローランド・エス・バンダム
朋美 小村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
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MEMC Electronic Materials Inc
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Filing date
Publication date
Priority claimed from US11/617,430 external-priority patent/US7662023B2/en
Priority claimed from US11/617,433 external-priority patent/US7601049B2/en
Application filed by MEMC Electronic Materials Inc filed Critical MEMC Electronic Materials Inc
Publication of JP2009525621A publication Critical patent/JP2009525621A/ja
Publication of JP2009525621A5 publication Critical patent/JP2009525621A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
JP2008553448A 2006-01-30 2007-01-24 加工対象物のナノトポロジを評価するためのウェハ両面グラインダ及び方法 Active JP5518338B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US76345606P 2006-01-30 2006-01-30
US60/763,456 2006-01-30
US11/617,430 US7662023B2 (en) 2006-01-30 2006-12-28 Double side wafer grinder and methods for assessing workpiece nanotopology
US11/617,433 US7601049B2 (en) 2006-01-30 2006-12-28 Double side wafer grinder and methods for assessing workpiece nanotopology
US11/617,430 2006-12-28
US11/617,433 2006-12-28
PCT/US2007/060981 WO2007130708A1 (en) 2006-01-30 2007-01-24 Double side wafer grinder and methods for assessing workpiece nanotopology

Publications (3)

Publication Number Publication Date
JP2009525621A JP2009525621A (ja) 2009-07-09
JP2009525621A5 JP2009525621A5 (enExample) 2010-03-11
JP5518338B2 true JP5518338B2 (ja) 2014-06-11

Family

ID=38255858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008553448A Active JP5518338B2 (ja) 2006-01-30 2007-01-24 加工対象物のナノトポロジを評価するためのウェハ両面グラインダ及び方法

Country Status (7)

Country Link
EP (1) EP1981685B1 (enExample)
JP (1) JP5518338B2 (enExample)
KR (1) KR101247065B1 (enExample)
CN (1) CN101410224B (enExample)
MY (1) MY149762A (enExample)
TW (1) TWI381906B (enExample)
WO (1) WO2007130708A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7930058B2 (en) * 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
US8712575B2 (en) * 2010-03-26 2014-04-29 Memc Electronic Materials, Inc. Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
JP7159861B2 (ja) * 2018-12-27 2022-10-25 株式会社Sumco 両頭研削方法
CN113314430B (zh) * 2021-01-05 2024-04-16 长江存储科技有限责任公司 Cmp工艺中的监测方法以及监测系统
CN114770366B (zh) * 2022-05-17 2023-11-17 西安奕斯伟材料科技股份有限公司 一种硅片双面研磨装置的静压板及硅片双面研磨装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970077136A (ko) * 1996-05-11 1997-12-12 김광호 웨이퍼 척을 갖춘 웨이퍼 에지 그라인딩 장치
KR980012012A (ko) * 1996-07-24 1998-04-30 김광호 웨이퍼 그라인더
US5816895A (en) * 1997-01-17 1998-10-06 Tokyo Seimitsu Co., Ltd. Surface grinding method and apparatus
WO2000022198A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
US6479386B1 (en) * 2000-02-16 2002-11-12 Memc Electronic Materials, Inc. Process for reducing surface variations for polished wafer
JP2001332609A (ja) * 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
JPWO2003009362A1 (ja) * 2001-07-19 2004-11-11 株式会社ニコン 研磨体、ｃｍｐ研磨装置及び半導体デバイスの製造方法
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
TW575476B (en) * 2001-09-07 2004-02-11 United Microelectronics Corp Control system for in-situ feeding back a polish profile
US6937915B1 (en) * 2002-03-28 2005-08-30 Lam Research Corporation Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
KR100954534B1 (ko) * 2002-10-09 2010-04-23 고요 기카이 고교 가부시키가이샤 얇은 원판형상 공작물의 양면 연삭방법 및 양면 연삭장치
JP2005025444A (ja) * 2003-07-01 2005-01-27 Fuji Photo Film Co Ltd データベースシステムにおけるデータ登録サーバおよびその制御方法
JP2005107854A (ja) * 2003-09-30 2005-04-21 Komatsu Electronic Metals Co Ltd ラップ盤のシミュレーションのためのシステム及びプログラム
JP3993856B2 (ja) * 2004-01-22 2007-10-17 光洋機械工業株式会社 両頭平面研削装置
DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
DE102004011996B4 (de) * 2004-03-11 2007-12-06 Siltronic Ag Vorrichtung zum simultanen beidseitigen Schleifen von scheibenförmigen Werkstücken
US8066553B2 (en) * 2004-03-19 2011-11-29 Memc Electronic Materials, Inc. Wafer clamping device for a double side grinder

Also Published As

Publication number Publication date
MY149762A (en) 2013-10-14
JP2009525621A (ja) 2009-07-09
EP1981685B1 (en) 2012-05-30
CN101410224B (zh) 2012-01-25
TWI381906B (zh) 2013-01-11
WO2007130708A1 (en) 2007-11-15
EP1981685A1 (en) 2008-10-22
CN101410224A (zh) 2009-04-15
KR101247065B1 (ko) 2013-03-25
TW200800493A (en) 2008-01-01
KR20080090558A (ko) 2008-10-08

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