CN101410224B - 双面晶片磨具以及工件纳米形貌的估计方法 - Google Patents

双面晶片磨具以及工件纳米形貌的估计方法 Download PDF

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Publication number
CN101410224B
CN101410224B CN2007800116097A CN200780011609A CN101410224B CN 101410224 B CN101410224 B CN 101410224B CN 2007800116097 A CN2007800116097 A CN 2007800116097A CN 200780011609 A CN200780011609 A CN 200780011609A CN 101410224 B CN101410224 B CN 101410224B
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CN
China
Prior art keywords
workpiece
wafer
sensor
nanotopography
hydrostatic pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800116097A
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English (en)
Chinese (zh)
Other versions
CN101410224A (zh
Inventor
S·S·巴加瓦特
M·S·巴加瓦特
R·S·旺达姆
T·科穆拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/617,433 external-priority patent/US7601049B2/en
Priority claimed from US11/617,430 external-priority patent/US7662023B2/en
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of CN101410224A publication Critical patent/CN101410224A/zh
Application granted granted Critical
Publication of CN101410224B publication Critical patent/CN101410224B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
CN2007800116097A 2006-01-30 2007-01-24 双面晶片磨具以及工件纳米形貌的估计方法 Expired - Fee Related CN101410224B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US76345606P 2006-01-30 2006-01-30
US60/763,456 2006-01-30
US11/617,433 2006-12-28
US11/617,433 US7601049B2 (en) 2006-01-30 2006-12-28 Double side wafer grinder and methods for assessing workpiece nanotopology
US11/617,430 2006-12-28
US11/617,430 US7662023B2 (en) 2006-01-30 2006-12-28 Double side wafer grinder and methods for assessing workpiece nanotopology
PCT/US2007/060981 WO2007130708A1 (en) 2006-01-30 2007-01-24 Double side wafer grinder and methods for assessing workpiece nanotopology

Publications (2)

Publication Number Publication Date
CN101410224A CN101410224A (zh) 2009-04-15
CN101410224B true CN101410224B (zh) 2012-01-25

Family

ID=38255858

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800116097A Expired - Fee Related CN101410224B (zh) 2006-01-30 2007-01-24 双面晶片磨具以及工件纳米形貌的估计方法

Country Status (7)

Country Link
EP (1) EP1981685B1 (enExample)
JP (1) JP5518338B2 (enExample)
KR (1) KR101247065B1 (enExample)
CN (1) CN101410224B (enExample)
MY (1) MY149762A (enExample)
TW (1) TWI381906B (enExample)
WO (1) WO2007130708A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7930058B2 (en) 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
US8712575B2 (en) * 2010-03-26 2014-04-29 Memc Electronic Materials, Inc. Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
JP7159861B2 (ja) * 2018-12-27 2022-10-25 株式会社Sumco 両頭研削方法
CN113314430B (zh) * 2021-01-05 2024-04-16 长江存储科技有限责任公司 Cmp工艺中的监测方法以及监测系统
CN114770366B (zh) * 2022-05-17 2023-11-17 西安奕斯伟材料科技股份有限公司 一种硅片双面研磨装置的静压板及硅片双面研磨装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1434489A (zh) * 2001-08-30 2003-08-06 瓦克硅电子股份公司 具有改良局部平整度的半导体圆片及其制造方法
CN1652307A (zh) * 2004-02-05 2005-08-10 硅电子股份公司 半导体晶片,生产半导体晶片的装置及方法
CN1667799A (zh) * 2004-03-11 2005-09-14 硅电子股份公司 同时双面研磨晶片形工件的装置
WO2005095054A1 (en) * 2004-03-19 2005-10-13 Memc Electronic Materials, Inc. Wafer clamping device for a double side grinder

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970077136A (ko) * 1996-05-11 1997-12-12 김광호 웨이퍼 척을 갖춘 웨이퍼 에지 그라인딩 장치
KR980012012A (ko) * 1996-07-24 1998-04-30 김광호 웨이퍼 그라인더
US5816895A (en) * 1997-01-17 1998-10-06 Tokyo Seimitsu Co., Ltd. Surface grinding method and apparatus
KR100622884B1 (ko) * 1998-10-14 2006-09-12 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 열적으로 어닐링된 저결함 밀도 단결정 실리콘
US6479386B1 (en) * 2000-02-16 2002-11-12 Memc Electronic Materials, Inc. Process for reducing surface variations for polished wafer
JP2001332609A (ja) * 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
KR100564125B1 (ko) * 2001-07-19 2006-03-27 가부시키가이샤 니콘 연마체, 화학 기계적 연마 장치 및 반도체 디바이스의제조 방법
TW575476B (en) * 2001-09-07 2004-02-11 United Microelectronics Corp Control system for in-situ feeding back a polish profile
US6937915B1 (en) * 2002-03-28 2005-08-30 Lam Research Corporation Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
US7150674B2 (en) 2002-10-09 2006-12-19 Koyo Machine Industries Co., Ltd. Both-side grinding method and both-side grinding machine for thin disc work
JP2005025444A (ja) * 2003-07-01 2005-01-27 Fuji Photo Film Co Ltd データベースシステムにおけるデータ登録サーバおよびその制御方法
JP2005107854A (ja) * 2003-09-30 2005-04-21 Komatsu Electronic Metals Co Ltd ラップ盤のシミュレーションのためのシステム及びプログラム
JP3993856B2 (ja) * 2004-01-22 2007-10-17 光洋機械工業株式会社 両頭平面研削装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1434489A (zh) * 2001-08-30 2003-08-06 瓦克硅电子股份公司 具有改良局部平整度的半导体圆片及其制造方法
CN1652307A (zh) * 2004-02-05 2005-08-10 硅电子股份公司 半导体晶片,生产半导体晶片的装置及方法
CN1667799A (zh) * 2004-03-11 2005-09-14 硅电子股份公司 同时双面研磨晶片形工件的装置
WO2005095054A1 (en) * 2004-03-19 2005-10-13 Memc Electronic Materials, Inc. Wafer clamping device for a double side grinder

Also Published As

Publication number Publication date
KR20080090558A (ko) 2008-10-08
CN101410224A (zh) 2009-04-15
KR101247065B1 (ko) 2013-03-25
WO2007130708A1 (en) 2007-11-15
MY149762A (en) 2013-10-14
JP2009525621A (ja) 2009-07-09
TW200800493A (en) 2008-01-01
TWI381906B (zh) 2013-01-11
JP5518338B2 (ja) 2014-06-11
EP1981685B1 (en) 2012-05-30
EP1981685A1 (en) 2008-10-22

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Granted publication date: 20120125

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