TWI381906B - 雙面晶圓研磨器及評估工作件奈米布局之方法 - Google Patents

雙面晶圓研磨器及評估工作件奈米布局之方法 Download PDF

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Publication number
TWI381906B
TWI381906B TW096103367A TW96103367A TWI381906B TW I381906 B TWI381906 B TW I381906B TW 096103367 A TW096103367 A TW 096103367A TW 96103367 A TW96103367 A TW 96103367A TW I381906 B TWI381906 B TW I381906B
Authority
TW
Taiwan
Prior art keywords
wafer
workpiece
sensor
hydrostatic
distance
Prior art date
Application number
TW096103367A
Other languages
English (en)
Chinese (zh)
Other versions
TW200800493A (en
Inventor
Sumeet S Bhagavat
Milind S Bhagavat
Roland R Vandamme
Tomomi Komura
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/617,433 external-priority patent/US7601049B2/en
Priority claimed from US11/617,430 external-priority patent/US7662023B2/en
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of TW200800493A publication Critical patent/TW200800493A/zh
Application granted granted Critical
Publication of TWI381906B publication Critical patent/TWI381906B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
TW096103367A 2006-01-30 2007-01-30 雙面晶圓研磨器及評估工作件奈米布局之方法 TWI381906B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US76345606P 2006-01-30 2006-01-30
US11/617,433 US7601049B2 (en) 2006-01-30 2006-12-28 Double side wafer grinder and methods for assessing workpiece nanotopology
US11/617,430 US7662023B2 (en) 2006-01-30 2006-12-28 Double side wafer grinder and methods for assessing workpiece nanotopology

Publications (2)

Publication Number Publication Date
TW200800493A TW200800493A (en) 2008-01-01
TWI381906B true TWI381906B (zh) 2013-01-11

Family

ID=38255858

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096103367A TWI381906B (zh) 2006-01-30 2007-01-30 雙面晶圓研磨器及評估工作件奈米布局之方法

Country Status (7)

Country Link
EP (1) EP1981685B1 (enExample)
JP (1) JP5518338B2 (enExample)
KR (1) KR101247065B1 (enExample)
CN (1) CN101410224B (enExample)
MY (1) MY149762A (enExample)
TW (1) TWI381906B (enExample)
WO (1) WO2007130708A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7930058B2 (en) * 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
US8712575B2 (en) * 2010-03-26 2014-04-29 Memc Electronic Materials, Inc. Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
JP7159861B2 (ja) * 2018-12-27 2022-10-25 株式会社Sumco 両頭研削方法
CN113314430B (zh) * 2021-01-05 2024-04-16 长江存储科技有限责任公司 Cmp工艺中的监测方法以及监测系统
CN114770366B (zh) * 2022-05-17 2023-11-17 西安奕斯伟材料科技股份有限公司 一种硅片双面研磨装置的静压板及硅片双面研磨装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW467974B (en) * 1998-10-14 2001-12-11 Memc Electronic Materials Single crystal silicon wafer and process for preparing the same
TW490733B (en) * 2000-03-13 2002-06-11 Nikon Corp Substrate holding apparatus and exposure apparatus including substrate-holding apparatus
TW537945B (en) * 2001-07-19 2003-06-21 Nikon Corp Polishing element, CMP polishing device and production method for semiconductor device
TW544365B (en) * 2000-02-16 2003-08-01 Memc Electronic Materials Process for reducing surface variations for polished wafer
TW575476B (en) * 2001-09-07 2004-02-11 United Microelectronics Corp Control system for in-situ feeding back a polish profile
TW200406284A (en) * 2002-03-28 2004-05-01 Lam Res Corp Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
JP2005025444A (ja) * 2003-07-01 2005-01-27 Fuji Photo Film Co Ltd データベースシステムにおけるデータ登録サーバおよびその制御方法
US20060009125A1 (en) * 2002-10-09 2006-01-12 Kenji Okura Both side grinding method and both side grinder of thin disc-like work

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970077136A (ko) * 1996-05-11 1997-12-12 김광호 웨이퍼 척을 갖춘 웨이퍼 에지 그라인딩 장치
KR980012012A (ko) * 1996-07-24 1998-04-30 김광호 웨이퍼 그라인더
US5816895A (en) * 1997-01-17 1998-10-06 Tokyo Seimitsu Co., Ltd. Surface grinding method and apparatus
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
JP2005107854A (ja) * 2003-09-30 2005-04-21 Komatsu Electronic Metals Co Ltd ラップ盤のシミュレーションのためのシステム及びプログラム
JP3993856B2 (ja) * 2004-01-22 2007-10-17 光洋機械工業株式会社 両頭平面研削装置
DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
DE102004011996B4 (de) * 2004-03-11 2007-12-06 Siltronic Ag Vorrichtung zum simultanen beidseitigen Schleifen von scheibenförmigen Werkstücken
KR20070030179A (ko) * 2004-03-19 2007-03-15 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 양면 연삭기용 웨이퍼 클램핑 장치

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW467974B (en) * 1998-10-14 2001-12-11 Memc Electronic Materials Single crystal silicon wafer and process for preparing the same
TW544365B (en) * 2000-02-16 2003-08-01 Memc Electronic Materials Process for reducing surface variations for polished wafer
TW490733B (en) * 2000-03-13 2002-06-11 Nikon Corp Substrate holding apparatus and exposure apparatus including substrate-holding apparatus
TW537945B (en) * 2001-07-19 2003-06-21 Nikon Corp Polishing element, CMP polishing device and production method for semiconductor device
TW575476B (en) * 2001-09-07 2004-02-11 United Microelectronics Corp Control system for in-situ feeding back a polish profile
TW200406284A (en) * 2002-03-28 2004-05-01 Lam Res Corp Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
US20060009125A1 (en) * 2002-10-09 2006-01-12 Kenji Okura Both side grinding method and both side grinder of thin disc-like work
JP2005025444A (ja) * 2003-07-01 2005-01-27 Fuji Photo Film Co Ltd データベースシステムにおけるデータ登録サーバおよびその制御方法

Also Published As

Publication number Publication date
TW200800493A (en) 2008-01-01
KR101247065B1 (ko) 2013-03-25
JP2009525621A (ja) 2009-07-09
EP1981685A1 (en) 2008-10-22
KR20080090558A (ko) 2008-10-08
MY149762A (en) 2013-10-14
JP5518338B2 (ja) 2014-06-11
CN101410224B (zh) 2012-01-25
CN101410224A (zh) 2009-04-15
EP1981685B1 (en) 2012-05-30
WO2007130708A1 (en) 2007-11-15

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