JP5517392B2 - 基板支持アセンブリ、プロセスチャンバ及びプロセスチャンバ内の基板の温度を維持するための方法 - Google Patents

基板支持アセンブリ、プロセスチャンバ及びプロセスチャンバ内の基板の温度を維持するための方法 Download PDF

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Publication number
JP5517392B2
JP5517392B2 JP2006209468A JP2006209468A JP5517392B2 JP 5517392 B2 JP5517392 B2 JP 5517392B2 JP 2006209468 A JP2006209468 A JP 2006209468A JP 2006209468 A JP2006209468 A JP 2006209468A JP 5517392 B2 JP5517392 B2 JP 5517392B2
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substrate
cooling
substrate support
support assembly
process chamber
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JP2007043170A (ja
JP2007043170A5 (enExample
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真 稲川
昭弘 細川
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US11/213,348 external-priority patent/US7429718B2/en
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  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
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JP2006209468A 2005-08-02 2006-08-01 基板支持アセンブリ、プロセスチャンバ及びプロセスチャンバ内の基板の温度を維持するための方法 Active JP5517392B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US70503105P 2005-08-02 2005-08-02
US60/705031 2005-08-02
US11/213348 2005-08-24
US11/213,348 US7429718B2 (en) 2005-08-02 2005-08-24 Heating and cooling of substrate support

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JP2007043170A JP2007043170A (ja) 2007-02-15
JP2007043170A5 JP2007043170A5 (enExample) 2014-02-27
JP5517392B2 true JP5517392B2 (ja) 2014-06-11

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8281739B2 (en) * 2007-03-01 2012-10-09 Applied Materials, Inc. RF shutter
WO2009016870A1 (ja) * 2007-08-01 2009-02-05 Sharp Kabushiki Kaisha 加熱処理装置および加熱処理方法
TWI565444B (zh) * 2011-04-25 2017-01-11 鴻準精密工業股份有限公司 加熱及冷卻裝置
KR101493983B1 (ko) * 2013-11-14 2015-02-17 주식회사 선익시스템 유기 태양전지 기판의 가열 장치
KR102854551B1 (ko) * 2018-11-28 2025-09-03 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 증기 챔버를 포함하는 페데스탈
KR102188261B1 (ko) * 2019-08-02 2020-12-09 세미기어, 인코포레이션 기판 냉각 장치 및 방법
JP2021064695A (ja) * 2019-10-11 2021-04-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN113517211B (zh) * 2021-04-16 2024-05-17 北京北方华创微电子装备有限公司 半导体工艺设备及薄膜沉积方法
JP7744187B2 (ja) * 2021-09-15 2025-09-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理システムおよび基板処理方法
CN117999639A (zh) * 2021-12-06 2024-05-07 株式会社国际电气 顶部加热器、半导体装置的制造方法、基板处理方法以及基板处理装置
CN115305452B (zh) * 2022-07-06 2023-09-08 北京北方华创微电子装备有限公司 反应腔室
CN118501202B (zh) * 2024-07-17 2024-10-15 湖南隆深氢能科技有限公司 一种钢带加热用测试系统及测试方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62277234A (ja) * 1986-05-23 1987-12-02 Canon Inc 静電チヤツク装置
JP3021264B2 (ja) * 1993-12-13 2000-03-15 アネルバ株式会社 基板加熱・冷却機構
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP4945031B2 (ja) * 2001-05-02 2012-06-06 アプライド マテリアルズ インコーポレイテッド 基板加熱装置および半導体製造装置
JP3921060B2 (ja) * 2001-08-31 2007-05-30 京セラ株式会社 ウエハ加熱装置
JP2003163244A (ja) * 2001-11-28 2003-06-06 Taiheiyo Cement Corp ウェハプローバ
JP3908678B2 (ja) * 2003-02-28 2007-04-25 株式会社日立ハイテクノロジーズ ウエハ処理方法
KR100904361B1 (ko) * 2003-03-28 2009-06-23 도쿄엘렉트론가부시키가이샤 기판의 온도제어방법 및 시스템

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