JP5496952B2 - Repair device, repair method, and device manufacturing method - Google Patents

Description

  The present invention is based on the results of an ESD resistance test and a normal operation test for inspecting a light emitting element such as an LSI element, an LED element and a laser element, and a device to be processed. The present invention relates to a repair device and a repair method that can be recovered automatically, and a device manufacturing method using the repair device.

  Conventionally, in an LSI element, a protection diode is connected to the input circuit side, and the ESD resistance of the protection diode is inspected. In light emitting elements such as LED elements and laser elements, the light emitting elements themselves have a diode structure. Since this diode structure is composed of a pn junction of a p-type diffusion layer and an n-type diffusion layer, the ESD resistance differs depending on the quality of the p-type diffusion layer and the n-type diffusion layer. Need to be inspected.

  The basic ESD circuit required for conventional ESD application is a high-voltage power supply and a high-voltage capacitor that uses ESD standards (HBM (Human Body Model), MM (Machine Model), etc.), applied resistance, and mercury. Consists of relays.

  The applied output portion of the ESD circuit energizes the device to be inspected by using a probe card in which a contact probe for connecting to the terminal of the device is fixedly mounted on the substrate, or a manipulator in which this contact probe is fixed to the arm. It is like that.

  The magnitude of the supply voltage to the device to be inspected is, for example, about 3 V or 5 V of the operating voltage in the normal operation test, but is approximately 1 in the typical ESD test (electrostatic discharge reliability test) in the reliability inspection. Intended for high voltages of -10 KV level. The ESD test is a test for durability when static electricity from a human body or a machine flows into a device to be inspected such as an LSI chip.

  On the other hand, in the repair technology for recovering a defective device to a normal insulation state, examples of target devices include TFTs, organic ELs, LSIs, LED elements, and laser elements, and large-scale devices include solar cells. Examples of the repair technique include a technique using redundant elements / circuits (which is often found in complex devices), an electric bias application technique, a laser repair technique and a process process technique that require identification of a defective portion.

  A repair technique for restoring a defective device to a normal insulation state, for example, an electric bias application method will be described. Explaining the insulation state of the gate oxide film, there is an oxide pinhole in the gate oxide film, and the current is intentionally applied in a state where the upper electrode of the gate oxide film and the lower silicon substrate are short-circuited through the oxide film pinhole. By flowing the upper electrode material (polysilicon, metal, etc.) with a narrow short-circuited portion, the gate oxide film is brought into a normal insulating state by opening the short-circuited portion (normal insulating state). Recover.

  As described above, Patent Document 1 discloses an example of an electrical bias application technique for burning out a short portion of a pinhole of a gate oxide film to restore a normal insulating state.

  FIG. 22 is a schematic diagram of a conventional reverse bias processing apparatus for a photoelectric conversion element disclosed in Patent Document 1. In FIG. FIG. 23 is an equivalent circuit of the photoelectric conversion elements connected in series in FIG.

  22 and 23, the conventional reverse bias processing apparatus 100 for a photoelectric conversion element 100 intentionally applies three different potentials output from the potential applying means 101 to the back electrode 103 of the photoelectric conversion element 102 at the same time. Apply current. The potential applying means 101 includes a power source 105 having an output terminal 104 that outputs three different potentials simultaneously, and a conductive member 106 that connects each output terminal 104 to the back electrode 103 of the photoelectric conversion element 102 connected in series. And. The conductive member 106 includes an electrode connecting portion 106a and a wiring portion 106b.

  For example, a potential of +3 V is output to the output terminal 104 a, a potential of 0 V is output to the output terminal 104 b, and a potential of −3 V is output to the output terminal 104 c.

  With this apparatus, a reverse bias voltage of 3 V can be simultaneously applied to the two photoelectric conversion elements 102, and the two photoelectric conversion elements 102 can be simultaneously reverse-biased so that a current can be intentionally passed to a defective portion with respect to a defective device. .

  The reverse bias voltage is set to 3 V, for example. However, the present invention is not limited to this, and any voltage that is equal to or lower than the withstand voltage of the photoelectric conversion element 102 may be used in order to prevent the PN junction of the photoelectric conversion element 102 from being broken and being short-circuited. The withstand voltage of the photoelectric conversion element 102 varies depending on the structure of the semiconductor layer such as the film thickness or the number of layers, but is generally about several volts to 20 volts.

  With the above configuration, in the reverse bias processing method using the reverse bias processing apparatus 100, the electrode connection portions 106a1, 106a2, and 106a3 are brought into contact with the back electrodes 103a, 103b, and 103c, respectively, the output terminal 104a is + 3V, and the output terminal 104b is 0V. When a potential of −3V is output to the output terminal 104c, + 3V is applied to the back electrode 103a, 0V is applied to the back electrode 103b, and −3V is applied to the back electrode 103c.

  A reverse bias voltage of 3 V is applied to the photoelectric conversion element 103a and the photoelectric conversion element 103b at the same time, and these photoelectric conversion elements are simultaneously reverse-biased so that a current is intentionally supplied to the defective portion with respect to a defective device to achieve normal insulation. It can be restored to the state.

JP 2008-91674 A

  The conventional reverse bias processing apparatus that performs the electrical bias processing disclosed in Patent Document 1 is configured in a one-to-one relationship of one power source for one device. If the power supply capacity is suppressed, there is an advantage that not only the size is reduced but also the cost is low. Therefore, if the power supply capacity is suppressed as much as possible, it is difficult to secure a sufficient current capacity for supplying current to the device. Furthermore, since the number of devices per wafer is as many as 100,000, for example, this electrical bias processing is not performed every two pieces, but more than one, for example, dozens or hundreds of batch processing. In the case of performing the above, a large number of power sources for collectively processing a large number of electrical bias processes are required. As described above, it is difficult in volume (size) to mount too many power sources.

  On the other hand, there may be a case where a power source is connected in parallel to a large number of devices that collectively process a large number of electrical bias processes. However, the number of devices that are collectively processed is not about 2 but around 10; Furthermore, when there are many tens or hundreds, it is not possible to ensure a sufficient current capacity from the power supply at the same time under the same stress (voltage) condition for a large number of devices. Even if there is a single device, it is difficult to secure a sufficient current capacity for supplying current to the device if the power supply capacity is suppressed as much as possible.

  The present invention solves the above-mentioned conventional problems, and does not depend on the power supply capacity, ensures a sufficient current capacity, and more efficiently restores a defective device to a normal insulation state. It is an object of the present invention to provide a repair method and a device manufacturing method using the repair apparatus.

  A repair device according to the present invention includes a voltage source as an electrical stress source in the repair device for supplying an electrical stress to a leak defect portion of a device to normalize an insulation state of the leak defect portion, and the voltage source. Voltage application means for applying one or more charge stresses from one or more voltage capacity means charged by one or more devices to one or more devices, thereby achieving the above object.

  Preferably, the voltage application means in the repair device of the present invention simultaneously applies each charge stress from the plurality of voltage capacity means charged by the voltage source to the plurality of devices at the same time.

  Further preferably, the voltage application means in the repair device of the present invention has the same circuit configuration as the number of devices to which a predetermined voltage is to be collectively applied.

  Further preferably, the voltage applying means in the repair device of the present invention is one voltage capacity means for storing a predetermined voltage from the voltage source, and one voltage capacity means for outputting the predetermined voltage from the voltage capacity means through a resistor. A voltage output unit; and a switching unit configured to switch the one voltage capacity unit to the voltage source side or to be connected to the voltage output unit side.

  Further preferably, the voltage applying means in the repair device of the present invention is configured such that the plurality of voltage capacity means for storing a predetermined voltage from the voltage source, and each predetermined voltage from the plurality of voltage capacity means to each resistance. And a plurality of switching means for switching the plurality of voltage capacity means to be connected to the voltage source side or to be connected to the voltage output side, respectively. Have.

  Further, preferably, the same circuit configuration in the repair device of the present invention has a circuit from the voltage capacity means to the switching means and further to the voltage output section through the resistor, as many as the number of devices to be subjected to batch application processing independently. Yes.

  Further, preferably, the repair apparatus of the present invention has a plurality of substrates on which one or a plurality of the same circuit configurations are mounted.

  Further preferably, the voltage source in the repair device of the present invention is a single voltage source having a charge processing capability corresponding to the capacities of the plurality of voltage capacity means corresponding to the number of devices to be collectively applied.

  Further preferably, the voltage value of the charge stress in the repair device of the present invention is a value that does not exceed the breakdown voltage as an absolute value and 90% of the breakdown voltage when the voltage / current characteristics of the device are nonlinear characteristics. The above voltage value is set.

  Further, preferably, the voltage source in the repair device of the present invention is configured such that its output voltage is variable, and can output a voltage level corresponding to the electrostatic breakdown voltage test.

  Further preferably, the plurality of voltage capacity means in the repair device of the present invention have a capacity value corresponding to the electrostatic breakdown voltage test.

  Further preferably, the resistance of the voltage output unit in the repair device of the present invention has a resistance value corresponding to the electrostatic breakdown voltage test.

  Further preferably, when the charge / discharge processing of the voltage capacity means in the repair device of the present invention is performed using the automatic transport processing device, the voltage capacity during the contact movement period by the automatic transport processing device with respect to the device. The means is charged and has a sequence process in which the device is discharged from the voltage capacity means after contact by the automatic transfer processor.

  Furthermore, it is preferable that the apparatus further includes current supply means for supplying current stress from the voltage source to the one or more devices in the repair apparatus of the present invention.

  Furthermore, it is preferable that the repair apparatus of the present invention further includes a timing controller that selectively operates two types of electrical stress, that is, charge stress and current stress.

  Further preferably, in the repair device according to the present invention, after the repair process of at least the voltage application means of the voltage application means and the current supply means, one or more devices are supplied with current from the voltage source by the current supply means. A determination means is provided for automatically determining whether a device in the one or a plurality of devices is the leak defective device.

  Further preferably, the determination means in the repair device of the present invention performs at least one of voltage level detection determination and current level detection determination.

  Further, preferably, at least the voltage applying unit among the determining unit and the voltage applying unit and the current supplying unit in the repair apparatus of the present invention is installed on the same substrate.

  Further preferably, the determination means in the repair device of the present invention outputs a determination result of at least one of a voltage level detection determination and a current level detection determination for one or a plurality of devices after the repair process to the timing controller.

  Further preferably, the determination means in the repair device of the present invention divides the determination result of at least one of the voltage level detection determination and the current level detection determination for one or a plurality of devices after the repair process into a plurality of levels. The determination signal is output to the timing controller.

  Further preferably, the timing controller in the repair device of the present invention is configured such that the plurality of voltages output the capacitance values of the plurality of voltage capacity means and the predetermined voltages from the plurality of voltage capacity means through the resistors, respectively. There is variable setting control means for variably setting the resistance value of each resistor of the output unit according to the determination result of the determination means.

  Furthermore, preferably, the variable setting means is controlled based on a control signal from the timing controller in the repair device of the present invention, and a predetermined capacitance value and a predetermined resistance are selected from a previously installed capacitance group and resistance group. Set to value.

  Further preferably, the timing controller in the repair device of the present invention determines the repair processing flow based on the quality of the determination result of the determination means or the degree of the failure.

  Further preferably, the timing controller in the repair device of the present invention sets one or a plurality of repair processing flows.

  The method for manufacturing a semiconductor device of the present invention normalizes the insulation state of the leak defect portion by supplying electrical stress to the leak defect portion of the device using the repair apparatus of the present invention. This achieves the above object.

  The repair method of the present invention is a repair method in which an electrical stress is supplied to a leak defect portion of a device to normalize the insulation state of the leak defect portion. A voltage application step of applying a charge stress from the means to the device, thereby achieving the object.

  Preferably, in the voltage applying step in the repair method of the present invention, the voltage applying unit applies each of the charge stresses from a plurality of voltage capacity units charged by a voltage source to a plurality of devices at the same time. A voltage applying step;

  Further preferably, in the repair method of the present invention, the current supply means further includes a current supply step of supplying current stress from the voltage source to one or a plurality of devices.

  Further preferably, in the repair method of the present invention, after the repair process of at least the voltage application step of the voltage application step and the current supply step, a current from the voltage source is repaired by the current supply means. The determination means has a determination step of determining whether or not a device in one or a plurality of devices to be repaired is the leak defective device in a state of being supplied to a plurality of devices.

  With the above configuration, the operation of the present invention will be described below.

  In the present invention, a voltage source serving as an electrical stress source, and a voltage applying means for applying one or more charge stresses from one or more voltage capacity means charged by the voltage source to one or more devices. Have.

  Further, the voltage applying means applies each charge stress from the plurality of voltage capacity means charged by the voltage source to the plurality of devices at the same time.

  As a result, one or more charge stresses from one or more voltage capacity means charged by the voltage source are applied to one or more devices, so that a sufficient current capacity can be ensured without depending on the power source capacity. Thus, the defective device can be restored to the normal insulation state more efficiently.

  Since the voltage applying means applies each of the charge stresses from the plurality of voltage capacity means charged by the voltage source to the plurality of devices at the same time, it is possible to perform a large number of electrical bias processes at once. Thus, the defective device can be restored to the normal insulation state more efficiently.

  As described above, according to the present invention, one or a plurality of charge stresses from one or a plurality of voltage capacity means charged by a voltage source is applied to one or a plurality of devices. A sufficient current capacity can be secured, and a defective device can be restored to a normal insulation state more efficiently.

  In addition, since the voltage applying means applies each charge stress from a plurality of voltage capacity means charged by a voltage source to a plurality of devices at the same time, a large number of electrical bias processes can be performed simultaneously. Thus, the defective device can be restored to the normal insulation state more efficiently.

It is a circuit block diagram showing typically an example of unit composition of a repair device in Embodiment 1 of the present invention. It is a circuit diagram which shows the specific structural example of the repair apparatus of FIG. It is a figure which shows the voltage-current characteristic of a diode. It is a flowchart which shows operation | movement of the repair apparatus of FIG. (A) And (b) is a figure which shows the voltage application waveform and current application waveform of CR stress (CR voltage application) of a repair process, (c) and (d) are constant current stress ( It is a figure which shows the voltage application waveform of a constant current supply), and its current application waveform. FIG. 4 is a circuit block diagram schematically showing another unit configuration example of the repair device of FIG. 1. It is a circuit diagram which shows the specific structural example of the repair apparatus of FIG. It is a flowchart which shows operation | movement of the repair apparatus of FIG. It is a perspective view which shows typically the enlarged image of the contact state to each terminal of the device in the repair apparatus of FIG. It is a perspective view which shows typically the example of a structure image at the time of the ESD test and predetermined voltage and constant current supply process in the repair apparatus of FIG. It is a top view which shows typically the example of an installation image of the several voltage application in the repair apparatus of FIG. 6, and an electric current applicator as another repair apparatus. Plan view schematically showing another installation example image of a plurality of voltage application and current application section as a further repair device in repair apparatus 1A of FIG. 6 and the voltage applied and current applicator of this and of the probe card and prober It is a longitudinal cross-sectional view. (A) is a perspective view which shows typically the voltage application and electric current applicator of FIG. 12, (b) is a figure which shows the ESD applied voltage waveform used by an ESD test. It is a circuit diagram which shows typically the case where the voltage level detection example of a determination circuit is added to the unit structure of the repair apparatus of FIG. It is a circuit diagram which shows typically the case where the example of the electric current level detection of another determination circuit is added to the unit structure of the repair apparatus of FIG. It is a circuit diagram which shows typically the case where the example of both the voltage level detection of another determination circuit and current level detection is added to the unit structure of the repair apparatus of FIG. It is a circuit diagram of the determination means in case the determination result of the repair apparatus of FIG. 6 is a binary determination signal. FIG. 17 is a principal circuit block diagram for explaining a case where a capacitance and a resistance value are varied by controlling a selector circuit based on a control signal output from any of the timing controllers of FIGS. 14 to 16. It is a flowchart which shows operation | movement of the repair apparatus of FIG. It is a figure for demonstrating operation | movement of the repair apparatus of FIG. FIG. 3 is a block diagram showing a wafer map and probing management mainly using a personal computer PC. It is the schematic of the reverse bias processing apparatus of the conventional photoelectric conversion element currently disclosed by patent document 1. FIG. It is an equivalent circuit of the photoelectric conversion element connected in series of FIG.

  Hereinafter, a repair device and a repair method of the present invention, and a device manufacturing method using the repair device according to a first embodiment will be described in detail with reference to the drawings. In addition, each thickness, length, etc. of the structural member in each figure are not limited to the structure to illustrate from a viewpoint on drawing preparation.

(Embodiment 1)
FIG. 1 is a circuit block diagram schematically showing a unit configuration example of a repair device according to Embodiment 1 of the present invention. In addition, this repair device is a unit configuration example, and a portion surrounded by a broken line includes a single case, and there are a plurality of, in particular, three or more or about ten to several hundreds, or more. Shall.

  In FIG. 1, in the repair device 1 according to the first embodiment, one terminal of a high-voltage power supply 2 whose output voltage is variable is connected to one end of an applied resistor 5 through high-voltage relays 3 and 4. The other end of the applied resistor 5 is connected to one terminal of the device 6 to be inspected and processed. The other terminal of the device 6 to be inspected and processed is connected to the other terminal of the high voltage power supply 2. A connection point 8 of these high voltage relays 3 and 4 is connected through a high voltage capacitor 7 to a connection point 9 between the other terminal of the device 6 to be inspected and processed and the other terminal of the high voltage power supply 2. Point 9 is grounded. Further, a timing controller 10 for controlling on / off of these high voltage relays 3 and 4 is provided. A power source for driving these high voltage relays 3 and 4 is required separately.

  The repair apparatus 1 includes a high voltage power source 2 as a voltage source serving as an electrical stress source for a leak defect portion of one or a plurality of devices 6, and one or a plurality of a plurality of predetermined voltages from the high voltage power source 2. One or a plurality of high-voltage capacitors 7 as voltage capacity means, one or a plurality of voltage output units for outputting each predetermined voltage from the one or a plurality of high-voltage capacitors 7 through each applied resistor 5, and one or a plurality of high-voltage capacitors 7 has high withstand voltage relays 3 and 4 as switching means for switching so as to connect 7 to the high voltage power supply 2 side or to the voltage output unit side. These one or more high-voltage capacitors 7, one or more applied resistors 5, one or more voltage output units, and the high-voltage relays 3 and 4 constitute voltage application means for repair processing.

  FIG. 2 is a circuit diagram showing a specific configuration example of the repair device 1 of FIG.

  In FIG. 2, the repair device 1 according to the first embodiment sequentially outputs a predetermined voltage from a high-voltage power source 2 that can output a predetermined voltage in a variable manner and a predetermined voltage from the high-voltage power source 2. A voltage application circuit 20 serving as a voltage application unit that supplies the devices 6 simultaneously and collectively, and performs a voltage application repair process on a plurality of devices 6 to be inspected and processed.

  This voltage application circuit 20 includes a plurality of high voltage capacitors 7 as high voltage capacity means for accumulating a predetermined high voltage from the high voltage power supply 2, and applying each predetermined high voltage from the plurality of high voltage capacitors 7 to the application resistor 5. A plurality of high-voltage output units that respectively output and a predetermined voltage from the high-voltage power supply 2 are connected to the high-voltage capacitor 7 side, or a predetermined voltage from the high-voltage capacitor 7 is connected to the high-voltage output unit side. The high-voltage relay 11 (equivalent to the above-mentioned high-voltage relays 3 and 4) as a plurality of switching means for switching as described above, and with the same circuit configuration, a high-voltage output from the high-voltage capacitor 7 through the high-voltage relay 11 and the applied resistor 5 As many circuits as the number of inspection and processing target devices 6 to be collectively applied are provided in parallel.

  One terminal of the high voltage power source 2 is replaced with the high voltage relays 3 and 4 of FIG. 1 through a plurality of contacts (here, eight contacts) of the high voltage relay 11 having multiple contacts (eight contacts here). The other electrodes of the plurality (eight in this case) of the high-voltage capacitors 7 are connected to the other terminals of the high-voltage power supply 2 and are grounded. Each one electrode of the multiple (eight here) high-voltage capacitors 7 is inspected from the high-voltage output section through each applied resistor 5 from each contact of the multi-contact (here, eight contacts) high-voltage relay 11. And connected to one terminal of each device 6 to be processed. The other terminal of each device 6 is connected to the other terminal of the high voltage power supply 2 from the GND voltage output section and grounded. Although not shown here, there is provided a timing controller 10 that controls the simultaneous connection switching of the multi-contact (here, 8 contacts) high-voltage relay 11 at a predetermined timing. A power source for driving the multi-contact (here, 8 contacts) high-voltage relay 11 is required separately.

  The high-voltage power supply 2 is selected and used in accordance with the capacity of the number of high-voltage capacitors 7 to be batch processed. In this case, after charging a large number of high-voltage capacitors 7 from the high-voltage power supply 2, a predetermined voltage and current are supplied to a large number of devices 6 by discharging from the large number of high-voltage capacitors 7. It does not depend directly on the current capacity of the high voltage power supply 2.

  The output voltage of the high voltage power supply 2 is configured to be variable, and a high voltage of about 1 to 10 KV level is targeted in an ESD test (electrostatic discharge reliability test) which is a typical reliability test. The ESD test is a test for durability when static electricity from a human body or a machine flows into a device 6 to be inspected such as an LSI chip.

  In addition to the high voltage power supply 2, another dedicated power supply may be used. Here, one high voltage power supply 2 is configured to be variable, and the high voltage power supply 2 is used for a normal operation test of the device 6. When used, the output voltage is varied and used, for example, about 3V or 5V of the operating voltage.

  Furthermore, when performing a repair process for voltage application, another dedicated power source may be used in addition to the high voltage power source 2, but here, one high voltage power source 2 is configured to be variable. For example, as shown in the voltage-current characteristic (non-linear characteristic) of the diode in FIG. 3 so as not to hinder the diode structure of the light-emitting element such as the protection diode of the LSI element and the LED element and the laser element, Since a stress current is applied only to a leak defect such as a pinhole (the upper conductive material enters the pinhole), the withstand voltage range in which the current does not penetrate the threshold voltage of the PN junction surface of the diode, diode breakdown A voltage B that is equal to or lower than the voltage A (a voltage that does not reach the breakdown voltage A) and is closer to the breakdown voltage A, usually a voltage that is about 10% higher than the breakdown voltage A (the absolute value of the breakdown voltage A) 90% or more of the voltage). The withstand voltage of the diode or photoelectric conversion element (LED or laser) varies depending on the structure such as the thickness of the insulating film, the thickness of the semiconductor layer, or the number of layers. It is set within a voltage range of several tens of volts to 200 volts. Note that C in FIG. 3 is a diode on-voltage value. The output voltage of the high-voltage power supply 2 is set by measuring the breakdown voltage A, returning the voltage value from the breakdown voltage A to a voltage value at which no current flows, and applying the voltage value in the voltage application repair process. Can be set more accurately. Further, D indicated by a broken line in FIG. 3 is a voltage-current characteristic of the defective diode.

  The high-voltage relay 11 is a mercury relay that has directionality in installation, and may have eight contacts here, but may have two contacts, or may have four contacts. . Instead of the 8-contact high withstand voltage relay 11, eight 1-contact high withstand voltage relays 3 and 4 may be provided. In the high-voltage relay 11, each of the eight contacts is simultaneously switched with respect to the high-voltage capacitor 7 by the timing controller 10 between the high-voltage power supply 2 side and the device 6 side around the high-voltage capacitor 7 side. The control signal to the high voltage relay 11 is a single simultaneous control with respect to independent high-voltage collective application from the eight high voltage capacitors 7 to the eight devices 6. If a plurality of high-voltage relays 11 are arranged in a stacked manner, it is not preferable because it is a component that operates by a coil magnetic field and may cause malfunction.

  Here, eight high-voltage capacitors 7 are used, and those having durability suitable for the test voltage are selected, and the capacitance is selected for each test model so as to meet the ESD test standard. Is selected. For example, 100 pF for the HBM (Human Body Model) standard and 200 pF for the MM (Machine Model) standard.

  Eight applied resistors 5 are used here, for example, 1.5 KΩ for the ESD test, for example, HBM standard, and 0 KΩ (no resistance) for the MM standard for ESD test. These high-voltage capacitors 7 and applied resistors 5 are mounted in a state where the number of devices 6 to be collectively processed is electrically independent.

  The device 6 is, for example, a protection diode element of an LSI chip, or a light emitting element such as an LED element or a laser element.

  A case will be described in which the repair process is performed using the repair device 1 in FIG. 1 on the device 6 that has become defective after the ESD test with the above configuration.

  FIG. 4 is a flowchart showing the operation of the repair device 1 of FIG.

  As shown in FIG. 4, first, the ESD test in step S1 is performed.

  In the ESD test of step S1, the output voltage of the high voltage power supply 2 is first set to a high voltage for the ESD test by the timing controller 10, and the eight contacts of the high voltage relay 11 are turned on to the high voltage power supply 2 side. Then, the high voltage power supply 2 branches into eight, and the current flows into each high voltage capacitor 7 and is uniformly accumulated in the high voltage for the ESD test of the high voltage power supply 2. At this time, the eight contacts on the device 6 side of the high-voltage relay 11 are turned off by the timing controller 10.

  Next, after the eight contacts on the high voltage power supply 2 side of the high withstand voltage relay 11 are turned off by the timing controller 10, control is performed so that the eight contacts on the device 6 side of the high withstand voltage relay 11 are turned on. . As a result, the high voltage for the ESD test stored in each high-voltage capacitor 7 is applied to one terminal of each device 6 to be inspected from the eight contacts of the high-voltage relay 11 through each applied resistor 5. The In this case, each high-voltage capacitor 7 and each device 6 to be inspected have a one-to-one correspondence, and a clear and accurate ESD test can be performed significantly efficiently.

  In this way, the eight contacts of these high voltage relays 11 are switched from the high voltage power source 2 side to each device 6 to be inspected by the timing controller 10 to charge or discharge the eight high voltage capacitors 7. A predetermined clear and accurate high voltage for ESD test is applied from each of the voltage output units to the devices 6 to be inspected from the eight high-voltage capacitors 7. The switching operation of the eight contacts of the high withstand voltage relay 11 is simultaneously performed by the timing controller 10 at a specified timing. In the ESD test, several types of application models and standards are defined for each, and conformity is determined by an ESD current waveform (or ESD voltage waveform) applied to each device 6 to be inspected.

  The ESD test is an ESD application circuit (voltage application circuit 20) in which eight series circuits of a high-voltage capacitor 7 and an application resistor 5 are connected in parallel through eight contacts of the high-voltage relay 11 from the high-voltage power supply 2. In addition to the socket, each device to be inspected via a contact jig as a contact means such as a manipulator having a plurality of probes (contact members) fixed to the arm, a probe card having a plurality of probes (contact members) fixed thereto, etc. A high voltage is applied to 6. For each device 6 to be inspected, a voltage supply source side terminal (one) and a GND side terminal (one) such as a high voltage are brought into contact with each terminal of the device 6 to be inspected. Are simultaneously applied.

  Subsequently, the ESD test determination in step S2 is performed.

  If there is no problem as a result of the predetermined ESD test determination, the test is terminated. If there is a problem with the defective device as a result of the ESD test determination, the repair process in step S3 is performed to repair the defective device.

  In the repair process of step S3, first, the output voltage of the high voltage power supply 2 is set to the voltage for repair process by the timing controller 10, and the eight contacts of the high voltage relay 11 are turned on to the high voltage power supply 2 side. The high voltage power supply 2 branches into eight and current flows into each high voltage capacitor 7 and is evenly stored in the repair voltage of the high voltage power supply 2. At this time, the eight contacts on the device 6 side of the high-voltage relay 11 are turned off by the timing controller 10.

  Next, after the eight contacts on the high voltage power supply 2 side of the high withstand voltage relay 11 are turned off by the timing controller 10, control is performed so that the eight contacts on the device 6 side of the high withstand voltage relay 11 are turned on. . As a result, the voltage for repair processing stored in each high-voltage capacitor 7 is applied to one terminal of each device 6 to be repaired from the eight contacts of the high-voltage relay 11 through each applied resistor 5. The In this case, each high-voltage capacitor 7 and each device 6 to be repaired have a one-to-one correspondence, and a clear and accurate repair process can be performed greatly efficiently.

  In this way, the eight contacts of these high voltage relays 11 are switched by the timing controller 10 from the high voltage power supply 2 side to the devices 6 to be repaired, and the eight high voltage capacitors 7 are charged or discharged. A predetermined clear and accurate voltage for repair processing is applied to each device 6 to be repaired from each of the eight high voltage capacitors 7 from each high voltage output unit. The switching operation of the eight contacts of the high withstand voltage relay 11 is simultaneously performed by the timing controller 10 at a specified timing.

  Then, the repair process determination of step S4 is performed.

  If there is no problem as a result of the predetermined repair process determination, the test is terminated. As a result of the repair process determination, if the device is still a defective device and has a problem, it is determined whether or not the specified number of times has ended in the next step S5, and when the specified number of times has ended, the repair process is terminated. If the specified number of times is not over in step S5, the process proceeds to the ESD test determination process in step S2 until the specified number is reached, and the repair process and its determination process are performed. The repair process is performed a prescribed number of times, and if the determination result is a defective device and there is a problem, it is determined as a defective device and the process is terminated.

  Up to now, the CR voltage application was instantaneously applied to the device 6 as the repair process, but in addition to the CR voltage application, by supplying a constant current to the device 6 for a certain period, two kinds of electrical stresses are applied. A case where the current leak portion of the device 6 is restored to an insulating state by using application will be described. As the current leakage portion of the device 6, for example, when the upper conductive material enters the pinhole portion of the insulating film and leaks, the leakage defect portion due to dust, the film thickness difference of the insulating film, or the insulating film on the step portion Also included is a leak defect caused by cutting or cracking.

  FIG. 5A and FIG. 5B are diagrams showing a voltage application waveform and a current application waveform of CR stress (CR voltage application) in the repair process. FIG. 5C and FIG. FIG. 5 is a diagram illustrating a voltage application waveform of a constant current stress (constant current supply) in a repair process and a current application waveform thereof.

  When the voltage application waveform of the CR stress in the repair process shown in FIG. 5A is compared with the voltage application waveform of the constant current stress in the repair process shown in FIG. 5C, the voltage level is the output voltage of the high voltage power supply 2. However, the voltage application time order is completely different between the order of μsec and the order of msec to sec. The voltage application waveform shown in FIG. 5A is instantaneous in the order of μsec, whereas the voltage application waveform shown in FIG. 5C is a constant period in the order of msec to sec. Further, when the current application waveform of CR stress in the repair process shown in FIG. 5B is compared with the current application waveform of constant current stress in the repair process shown in FIG. 5b starts to flow, the waveform of FIG. 5 (b) has a larger instantaneous current flow than FIG. 5 (d), and there is an impact, but the current application time is in the order of μsec and msec to sec. The waveform of FIG. 5 (b) is at least three orders of magnitude shorter than 5 (d).

  In short, the voltage applied waveform of CR stress (CR voltage application) with impact is supplied to the leak portion of the device 6 and burned out, and the total amount of the device 6 in which the leak defect portion that has not been recovered by instantaneous voltage application remains. By supplying a constant current for a certain period of time with a large amount of energy and burning out the remaining leaked portion, the insulating state can be more reliably restored. In this way, the current leak portion of the device 6 is more reliably recovered to the insulating state by using two types of stress application.

  FIG. 6 is a circuit block diagram schematically showing another unit configuration example of the repair device 1 of FIG. In addition, this repair device is a unit configuration example, and the portion surrounded by a broken line includes a single case, and there are a plurality of, in particular, three or more, or a number of around 10 to several hundred, or even more. It shall be. Members having the same operational effects as those of the constituent members of FIG. 1 are denoted by the same member numbers and description thereof is omitted.

  In FIG. 6, in addition to the configuration of the repair device 1, the repair device 1A of the first embodiment has one terminal of the high voltage power supply 2 connected to one terminal of the high voltage relay 12 for supplying a constant current. The other terminal of the relay 12 is connected to a connection point 14 between the applied resistor 5 and the device 6 via a current limiting resistor 13. A timing controller 10A for controlling on / off of these high voltage relays 3, 4 and 12 is provided. A power source for driving these high voltage relays 3, 4 and 12 is required separately.

  FIG. 7 is a circuit diagram showing a specific configuration example of the repair device 1A of FIG. Note that members having the same functions and effects as those of the constituent members in FIG. 2 are denoted by the same member numbers and description thereof is omitted.

  In FIG. 7, the repair device 1 </ b> A of the first embodiment sequentially outputs a predetermined voltage and current from a high voltage power source 2 that variably outputs a predetermined voltage, and a plurality of inspection and processing targets. A voltage application unit and a voltage application and current supply circuit 20A serving as current supply units are simultaneously supplied to the device 6 at the same time, and voltage application and current supply are performed on a plurality of devices 6 to be tested and processed. Repair processing for applying two types of stress is performed.

  This voltage application and current supply circuit 20A has a plurality of high voltage capacitors 7 as voltage capacity means for accumulating a predetermined voltage from the high voltage power source 2, and each of the predetermined voltages from the plurality of high voltage capacitors 7 through the application resistor 5. A plurality of voltage output units that respectively output and a predetermined voltage from the high voltage power supply 2 are connected to the high voltage capacitor 7 side, or a predetermined high voltage from the high voltage capacitor 7 is connected to the voltage output unit side. High-voltage relay 11 (equivalent to the above-mentioned high-voltage relays 3 and 4) and a high-voltage power source 2 as a constant current source, and a constant current stress for each device 6 to be inspected and processed, respectively. And a high-voltage relay 12 for supplying a constant current that can supply a current stress from a constant current source via a resistor 13. Luo high-voltage relay 11 further independent circuit extending to the voltage output unit through the injection resistance 5, and has in parallel by the number fraction of the plurality of inspection and processed device 6 to be batch application treatment. The plurality of high voltage capacitors 7, the high withstand voltage relay 11, the plurality of application resistors 5, and the plurality of voltage output units constitute voltage application means. The high voltage power source 2, the high voltage relay 12, and the resistor 13 constitute current supply means.

  A case will be described in which repair processing is performed by applying two types of stresses to the device 6 that has become defective after the ESD test using the repair device 1A of FIG.

  FIG. 8 is a flowchart showing the operation of the repair device 1A of FIG. The flowchart of FIG. 8 is obtained by adding steps S6 and S7 of the constant current stress application process and the determination process between steps S4 and S5 of the flowchart of FIG.

  As shown in FIG. 8, first, an ESD test is performed in step S1, and then an ESD test determination is performed in step S2. Further, when the result of the ESD test determination is a defective device, a predetermined voltage application in step S3 is performed. Repair processing is performed to repair the defective device. At this time, the high voltage relay 12 is turned off by the timing controller 10A.

  Then, the repair process determination of step S4 is performed. If there is no problem as a result of the predetermined repair process determination, the test is terminated. As a result of the repair process determination, if there is still a problem with the defective device, the repair process by applying a constant current in step S6 is performed to repair the defective device.

  The repair process by applying a constant current is controlled such that the high-voltage relay 11 for supplying a constant current is turned on after the high-voltage relay 11 is operated to the charging side by the timing controller 10A. As a result, the constant current stress caused by the current source is energized from the high-voltage power supply 2 to the one terminal of the device 6 to be processed through the high-voltage relay 12 and the resistor 13.

  As described above, the high voltage relay 11 for charging and discharging and the high voltage relay 12 for supplying constant current are switched on / off by the timing controller 10A, and the high voltage capacitor 7 is charged or discharged to obtain a predetermined voltage. In addition to the application, a constant current stress can be supplied to the device 6 to be processed. The switching operation of the high voltage relays 11 and 12 is performed at a specified timing by the timing controller 10A. In the constant current stress, an energization stress by a constant current source is applied to the device 6 to be processed for a specified time by the high voltage relay 12.

  In short, a predetermined voltage and a constant current are sequentially supplied from the high voltage power supply 2 to the device 6 to be processed through a voltage application and current supply circuit 20A and a contact jig such as a socket arm. Supply a predetermined voltage and constant current to the device 6 to be processed by bringing the supply side terminal (one) and the GND side terminal (one) of the predetermined voltage and constant current into contact with each terminal of the device 6 to be processed. To do. In this case, the processing target device 6 is subjected to predetermined voltage application and constant current application processing as a single unit.

  After the constant current application process, the repair process determination in step S7 is performed. If there is no problem as a result of the predetermined repair process determination, the test is terminated. As a result of the repair process determination, if the device is still a defective device and has a problem, it is determined whether or not the specified number of times has ended in the next step S5, and when the specified number of times has ended, the repair process is terminated. If the specified number of times is not over in step S5, the process proceeds to the ESD test determination process in step S2 until the specified number is reached, and the subsequent repair process and its determination process are sequentially performed. Each repair process of the prescribed number of times is sequentially performed, and even if the determination result is a defective device and there is a problem, it is determined as a defective device and the process is terminated.

  In addition, both the repair process by applying a predetermined voltage and the repair process by applying a constant current are applied to the defective defect part of the defective device at the same time by applying a stronger stress so that the leak defect part is burned out and restored to a normal insulation state. It is also possible to increase the specified number of times.

  FIG. 9 is a perspective view schematically showing an enlarged image of a contact state to each terminal of the device 6 in the repair apparatus 1A of FIG. FIG. 10 is a perspective view schematically showing an example of a configuration image during the ESD test / predetermined voltage and constant current supply process in the repair device 1A of FIG.

  9 and 10, in the repair device 1A of FIG. 7, one high-voltage power source 2, eight-contact high-voltage relay 11, eight high-voltage capacitors 7, eight applied resistors 5, a constant current supply An ESD / predetermined voltage and constant current supply board equipped with one high voltage relay 12, one resistor 13 and other additional circuits is housed in a case for safety, and a constant current is supplied from the high voltage power source 2. One high-voltage relay 12 and one resistor 13 for one circuit are common, and a wiring output unit for eight circuits of a series circuit from each high-voltage capacitor 7 to the applied resistor 5 through the contact of the high-voltage relay 11 A circuit box 21 (ESD / predetermined voltage and constant current supply board box) accommodating the voltage application and current supply circuit 20A for 8ch having 21a and each wiring 22 from the wiring output part 21a of the circuit box 21 are provided on the upper surface. Was Eight sets of probes 24a and 24b project from the lower surface so as to correspond to the two terminals 6a and 6b of each device 6 on a one-to-one basis, respectively. Each of the terminals 6a and 6b of each of the eight devices 6 to be inspected and processed, provided in a matrix on the semiconductor wafer 16 on the wafer stage 15, and the high-voltage capacitors 7 respectively. 8 sets of probes 24a and 24b that can be connected to the high-voltage power supply 2 are arranged in a one-to-one correspondence.

  As the wiring length from the wiring output portion 21a of the circuit box 21 to the probe card 25 changes, the ESD applied voltage waveform, the predetermined voltage applied waveform, and the constant current supply waveform change. Therefore, the wiring length from the high-voltage capacitor 7 to each terminal 6a, 6b of the device 6 and the wiring length of the current path from the high-voltage power supply 2 to each terminal 6a, 6b of the device 6 via the high-voltage relay 12 are all the same. The ESD voltage waveform, the predetermined voltage application waveform, and the constant current supply waveform applied to the terminals 6a and 6b of the device 6 are set to the same waveform as the wiring length. The predetermined voltage and constant current supply board including ESD may have a socket part for component replacement.

  FIG. 11 is a plan view schematically showing an installation image example of a plurality of voltage application and current applicators in the repair device 1A of FIG. 6 as the repair device 1B.

  As shown in FIG. 11, the repair device 1 </ b> B has a plurality of voltage application and current application substrates 26 as a plurality of voltage application and current applicators, arranged in a radial manner with a central circular portion 27 standing around it, A plurality of output terminals of the same circuit configuration in the plurality of voltage application and current application substrates 26 are provided toward the central circular portion 27 side. Each of the plurality of high voltage output units from the plurality of output terminals having the same circuit configuration is electrically connected to each terminal of the plurality of inspection and processing devices 6 provided on the lower side of the central circular portion 27. It is configured as possible. The distances including the independent wiring for the number of devices to be collectively applied from the plurality of output terminals of the same circuit configuration to the plurality of inspection and processing target devices 6 through the voltage output units are all the same distance. The same voltage and current waveform from the high-voltage power supply 2 can be applied to each terminal of the devices 6 to be inspected and processed at the same time clearly and reliably.

  The repair device 1B also serves as an ESD test device. In addition to the high voltage relay 12 and the current supply circuit of the resistor 13 in the voltage application and current supply circuit 20A, the multiple voltage high voltage relay 11 and the plurality of high voltage capacitors are provided. 7 and a voltage application and current application substrate 26 having a plurality of voltage application circuits on which a plurality of application resistors 5 are mounted are in a donut shape excluding the central circular portion 27 and a plurality of radial shapes (radial with respect to the center of the central circular portion 27) ). The thicknesses of the high voltage relays 11 and 12 are 15 mm for a 4000 V breakdown voltage and 30 mm for a 8000 V breakdown voltage. This thickness determines how many voltage application and current application substrates 26 can be arranged. When the thickness of the high voltage relays 11 and 12 is 15 mm for a 4000 V breakdown voltage and the inner diameter of the central circular portion 27 is 40 cm, 64 voltage application and current application substrates 26 can be arranged.

  Further, since the thickness of the voltage application and current application board 26 is determined by the thickness of the high voltage relays 11 and 12, it is preferable to use the high voltage relays 11 and 12 having a small thickness. For example, when one voltage application and current application board 26 is 4ch, for example, when eight high-voltage relays with one contact are mounted, the thickness of the high-voltage relay is 4000 V withstand voltage and 83 sheets at 13.5 mm. The voltage application and current application substrate 26 can be mounted radially, and has a capacity of 332 channels in total (332 devices 6 can simultaneously perform an ESD test and a repair process). In this case, the outer diameter of the voltage application and current application substrate 26 is about 50 cm.

  A plurality of sets of probes 24a and 24b provided on the lower surface of the probe card 25 are connected to the connector 23 of the probe card 25 by connecting the wiring 22 to the connector 23 of the probe card 25 from the inner periphery of the plurality of voltage application and current application substrates 26. An ESD test and repair process are performed by connecting to the terminals 6a and 6b of each of the devices 6 to be inspected and processed, which are provided in a matrix on the semiconductor wafer 16 adsorbed on the substrate 15 in a one-to-one correspondence. Done. The positional relationship between the probes 24a and 24b and the terminals 6a and 6b of the device 6 can be accurately positioned by image recognition while accurately moving the wafer stage 15 side by the prober of the automatic transfer apparatus. Here, an ESD test and a repair process are performed in a row of 64 semiconductor chips (device 6) each having a size of 400 μm × 200 μm, and this is repeated, and all the chips on the wafer (for example, 100,000) are sequentially and automatically performed. be able to. Since it is difficult to stand the probes 24a and 24b in the adjacent rows, it is less likely that contact mistakes occur in one row than in the ESD test and repair process in two or more rows.

  The wiring length from the plurality of voltage application and current application substrates 26 to each device 6 is desirably 20 cm or less in order to maintain the standard of the ESD applied voltage waveform in FIG. In addition to the ESD voltage waveform of FIG. 13B applied to each terminal of the device 6 by making the wiring length from each of the plurality of voltage application and current application substrates 26 to each terminal of the eight devices 6 the same wiring length, The voltage application waveform and the current application waveform are also the same. This makes the ESD test and repair process uniform.

Figure 12 is a plan view schematically showing another installation example image of a plurality of voltage application and current application section in the repair apparatus 1A of FIG. 6 as a repair apparatus 1C and voltage application and current applicator of this and the probe card and It is a longitudinal cross-sectional view of a prober. FIG. 13A is a perspective view schematically showing the voltage application and current applicator of FIG. 12, and FIG. 13B is a diagram showing an ESD applied voltage waveform used in an ESD test.

1 2 and Figure 13 (a), the repair apparatus 1C includes a plurality of circuit boxes 21 are arranged radially around spaced central circular portion 28 is a plurality of housings. Output terminals in a plurality of identical circuit configurations of a plurality of voltage application and current application substrates 26 housed in a plurality of circuit boxes 21 are respectively provided toward the central circular portion 28 side. Each of the plurality of voltage output units from the plurality of output terminals of the same circuit configuration is electrically connected to each of the terminals 6a and 6b of the plurality of inspection and processing devices 6 provided on the lower side of the central circular portion 28. It is configured to be connectable to. The distances including the independent wirings 22 for the number of devices to be collectively applied from the plurality of output terminals having the same circuit configuration to the plurality of devices 6 to be inspected and processed through the voltage output units are all the same distance. The same ESD applied voltage waveform from the high-voltage power supply 2, a predetermined voltage waveform, or a constant current waveform is applied to each of the plurality of devices 6 to be inspected and processed simultaneously. The voltage output unit may be an output terminal having the same circuit configuration or may include the probes 24 a and 24 b of the probe card 25 through the wiring 22 from the output terminal.

  As the repair device 1C, one high-voltage power source 2, high-voltage relay 12 and resistor 13, eight-contact high-voltage relay 11, eight high-voltage capacitors 7, eight applied resistors 5, and other additional circuits are mounted. A plurality of voltage application and current application boards 26 are housed in a casing, and 8 circuits of a series circuit from the high voltage capacitor 7 to the application resistance 5 through the contact of the high voltage relay 11 and the high voltage power supply 2 to the high voltage relay 12 In addition, eight circuit boxes 21 for eight channels and one channel having wiring output portions 21a for wiring of resistors 13 are radially arranged. The wiring 22 is drawn from the inner peripheral side of the eight circuit boxes 21 and connected to the connector 23 of the probe card 25, and eight sets of probes 24a and 24b provided on the lower surface of the probe card 25 are connected to a prober of an automatic transfer device. Corresponding one-to-one with each terminal 6a, 6b of each of the eight devices 6 to be inspected and processed among the many devices 6 provided in a matrix on the semiconductor wafer 16 on the wafer stage 15 constituting In this manner, the ESD test and the repair process are performed by repeating the connection.

  The wiring length from the wiring output part 21a of the circuit box 21 for each of 8ch and 1ch to each device 6 is desirably 20 cm or less in order to maintain the standard of the ESD applied voltage waveform in FIG. The ESD voltage waveform shown in FIG. 13B and applied to each terminal of each device 6 with the same wiring length from each wiring output portion 21a of each circuit box 21 to each terminal of each of the eight devices 6 are applied. The stress waveform of the repair process is the same. This makes the ESD test and subsequent repair process uniform.

  Up to this point, the case where two types of stress (predetermined voltage application and constant current supply) are supplied to each device 6 having a leak defect by applying an electrical bias of voltage and current has been described. A determination drive configuration in which non-defective products and defective products are identified as presence / absence and the stress condition is automatically changed according to the leak defect state of the defective products will be described in detail below with reference to the drawings.

  FIG. 14 is a circuit diagram schematically showing a case where a voltage level detection example of the determination circuit is added to the unit configuration of the repair device of FIG. In FIG. 14, members having the same operational effects as the constituent members of the repair device of FIG.

  In FIG. 14, in the repair device 1 </ b> D, one terminal of the high voltage power supply 2 is connected to one end of the application resistor 5 through the high voltage relays 3 and 4. The other end of the applied resistor 5 is connected to one terminal of the device 6 to be inspected and processed. The other terminal of the device 6 is connected to the other terminal of the high voltage power supply 2. A connection point 8 of these high-voltage relays 3 and 4 is connected through a high-voltage capacitor 7 to a connection point 9 between the other terminal of the device 6 and the other terminal of the high-voltage power supply 2, and this connection point 9 is grounded. ing.

  One terminal of the high-voltage power supply 2 is connected to one terminal of the high-voltage relay 12, and the other terminal of the high-voltage relay 12 is connected to the connection point 14 between the applied resistor 5 and the device 6 via the current-limiting resistor 13. It is connected. A timing controller 10D for controlling on / off of these high voltage relays 3, 4 and 12 is provided. A power source for driving these high voltage relays 3, 4 and 12 is required separately.

  Further, both ends of the device 6 to be inspected and processed are connected to the respective input terminals of the operational amplifier 31. At the time of determination, the high-voltage relay 12 is turned on by the timing controller 10D and a current is passed through the device 6. In this state, a non-defective product and a defective product are identified as the presence / absence of a leak defect based on the differential amplification result of the voltage across the device 6 by the operational amplifier 31 (the amplification factor may be 1). The output terminal of the operational amplifier 31 is provided with a feedback resistor 32, and a negative input terminal to which the feedback resistor 32 is connected is grounded via a ground resistor 33. The output terminal of the operational amplifier 31 is connected to one input terminal of each of the comparators 34 and 36. The output terminal of the voltage output unit 35 for the reference value A is connected to the other input terminal of the comparator 34. The output terminal of the voltage output unit 37 having a reference value B smaller than the reference value A is connected to the other input terminal of the comparator 36. The output terminals of the comparators 34 and 36 are connected to the timing controller 10D.

  Only when the output voltage value X from the operational amplifier 31 is not less than the reference value B and not more than the reference value A is a non-defective device free from leak defects. When the output voltage value X from the operational amplifier 31 is smaller than the reference value B or larger than the reference value A, a defective device having a leak defect is obtained. When the reference value B is set to a small value and the output voltage value X is 0 V, it may be determined that the contact is poor and the probe is contacted with each terminal of the device 6 again.

  The operational amplifier 31, the feedback resistor 32, the ground resistor 33, the comparators 34 and 36, the voltage output unit 35 of the reference value A, and the voltage output unit 37 of the reference value B constitute a determination unit. It is determined whether or not the device 6 is. As described above, the determination unit outputs a determination signal obtained by dividing the voltage level detection result of the repair target device 6 into ternary levels to the timing controller 10D.

  FIG. 15 is a circuit diagram schematically showing a case where a current level detection example of another determination circuit is added to the unit configuration of the repair device of FIG. In FIG. 15, members having the same operational effects as the constituent members of the repair device of FIG.

  As shown in FIG. 15, in the repair device 1E, both ends of the current limiting resistor 13 are connected to the respective input terminals of the operational amplifier 31. At the time of determination, the high-voltage relay 12 is turned on by the timing controller 10E. Thus, a current is passed through the device 6 through the resistor 13. In this state, a non-defective product and a defective product are identified as the presence or absence of a leak defect based on the differential amplification result of the voltage across the resistor 13 by the operational amplifier 31. The output terminal of the operational amplifier 31 is provided with a feedback resistor 32, and a negative input terminal to which the feedback resistor 32 is connected is grounded via a ground resistor 33. The output terminal of the operational amplifier 31 is connected to one input terminal of each of the comparators 34 and 36. The output terminal of the voltage output unit 35 for the reference value A is connected to the other input terminal of the comparator 34. The output terminal of the voltage output unit 37 having a reference value B smaller than the reference value A is connected to the other input terminal of the comparator 36. The output terminals of the comparators 34 and 36 are connected to the timing controller 10E.

  The current value flowing through the current limiting resistor 13 is converted into a voltage value. Only when the output voltage value X from the operational amplifier 31 is not less than the reference value B and not more than the reference value A, a non-defective device is obtained. When the output voltage value X from the operational amplifier 31 is smaller than the reference value B or larger than the reference value A, a defective device having a leak defect is obtained. When the reference value B is set to a small value and the output voltage value X is 0 V, it may be determined that the contact is poor and the probe is contacted with each terminal of the device 6 again.

  The operational amplifier 31, the feedback resistor 32, the ground resistor 33, the comparators 34 and 36, the voltage output unit 35 of the reference value A, and the voltage output unit 37 of the reference value B constitute a determination unit. It is determined whether it is the device 6 or not. In this way, the determination unit outputs a determination signal obtained by dividing the current level detection result of the repair target device 6 into three levels, to the timing controller 10E.

  FIG. 16 is a circuit diagram schematically showing a case where both cases of voltage level detection and current level detection of still another determination circuit are added to the unit configuration of the repair device of FIG. In FIG. 16, members having the same operational effects as the constituent members of the repair device of FIG.

  As shown in FIG. 16, in the repair device 1F, both ends of the device 6 to be inspected and processed and both ends of the current limiting resistor 13 are connected to the input terminals of the operational amplifier 31, respectively. The high-voltage relay 12 is turned on by the timing controller 10 </ b> F, and a current is supplied to the device 6 through the resistor 13. In this state, the non-defective product and the defective product are identified as the presence or absence of a leak defect based on the differential amplification result of the two operational amplifiers 31. The output terminals of the two operational amplifiers 31 are each provided with a feedback resistor 32, and a negative input terminal to which the feedback resistor 32 is connected is grounded via a ground resistor 33. The output terminals of the two operational amplifiers 31 are connected to one input terminals of the comparators 34 and 36, respectively. The output terminal of the voltage output unit 35 for the reference value A is connected to the other input terminal of the comparator 34. The output terminal of the voltage output unit 37 having a reference value B smaller than the reference value A is connected to the other input terminal of the comparator 36. Each output terminal of the comparators 34 and 36 is connected to the timing controller 10F in two systems.

  These operational amplifier 31, feedback resistor 32, ground resistor 33, comparators 34 and 36, reference value A voltage output unit 35, and reference value B voltage output unit 37 are used to determine two systems of voltage level detection and current level detection. Each means is configured, and each of the two determination means can more accurately determine whether or not the device 6 has a leak defect. As described above, the determination unit outputs each determination signal obtained by dividing both the voltage level detection result and the current level detection result of the repair target device 6 into ternary levels to the timing controller 10F.

  Further, when a determination signal divided into good or bad binary levels is output to the timing controller 10D, 10E, or 10F, as shown in FIG. 17, an operational amplifier 31, a feedback resistor 32, a ground resistor 33, and a comparator 34 are provided. The voltage output unit 35 of the reference value A constitutes at least one of voltage level detection and current level detection. This determination unit can determine whether the device 6 has a leak defect. As described above, the determination unit outputs a determination signal obtained by dividing at least one of the voltage level detection result and the current level detection result of the repair target device 6 into binary levels to the timing controller 10D, 10E, or 10F.

  The timing controller 10D, 10E, or 10F can select two types of stress application: charge stress (voltage stress) and current stress.

  The determination means performs at least one of voltage level detection and current level detection to be repaired, and determines a determination signal obtained by dividing the result of the pass / fail determination or the detailed determination into a plurality of levels such as binary or ternary values. Output to the timing controller 10D, 10E or 10F. In the timing controller 10D, 10E, or 10F, a flow to be processed is determined based on the quality of the determination result by the determination unit or the degree of the failure. If the determination result is good, the repair process is terminated. If the determination result is bad, the repair process is performed according to the degree of the defect. For example, if the degree of failure is a little better, the repair process is performed with the stress reduced. For example, if the degree of failure is large, the repair process is performed with a large stress. In the timing controller 10D, 10E, or 10F, the number of repair process flows is set based on the quality of the determination result by the determination unit or the degree of failure. The number of repair processing flows (the number of loops) is set in advance to a minimum number, for example, 10 times. When the first determination data is stored in the storage unit in the timing controller 10D, 10E, or 10F, the determination data is compared with the determination data after the minimum number of repair processes, and the data is not recovered at all When the repair process is completed and it is determined that there is a sign of recovery, the repair process is performed by increasing the minimum number of repair processes by a predetermined number of repair processes according to the comparison result. At this time, the stress condition is also set to the stress condition (stress level) according to the comparison result. The stress increases as the number of capacitors or the capacitor capacity increases, and the stress decreases as the resistance value of the output resistor 5 increases.

  Depending on the determination result of the determination means, the selection means as the variable setting means can variably set the capacitance of the capacitor 7 and the resistance value of the output resistor 5 by the timing controller 10D, 10E or 10F. That is, as shown in FIG. 18, based on the control signal output from the timing controller 10D, 10E or 10F, the selector circuits 38 and 39 as the selection means are controlled, and the capacity means group 7A and the pre-mounted capacity means group 7A and By selecting the number of capacitive means and the number of resistors from the resistor group 5A, the capacitor capacitance and the resistance value of the output resistor 5 can be variably set.

  FIG. 19 is a flowchart showing the operation of the repair device 1F of FIG. FIG. 20 is a diagram for explaining the operation of the repair device 1F of FIG.

  As shown in FIG. 19, a normal operation test of the device 6 is performed in step S11. The output voltage value of the high voltage power supply 2 is changed to an operating voltage of 3V or 5V, for example.

  That is, as shown in FIG. 20, the high-voltage relay 3 for charging is turned on by the timing controller 10 </ b> F, and the current from the high-voltage power supply 2 is accumulated in the high-voltage capacitor 7. At this time, the high-voltage relay 4 for discharge is turned off by the timing controller 10F.

  Subsequently, after the charging high-voltage relay 3 is turned off by the timing controller 10F, control is performed so that the discharging high-voltage relay 4 is turned on. As a result, the predetermined voltage accumulated in the high-voltage capacitor 7 is applied from the high-voltage relay 4 to the one terminal of the device 6 to be inspected through the application resistor 5. At this time, the high voltage relay 12 is turned off by the timing controller 10F.

  Next, the ESD test in step S12 is performed.

  The timing controller 10F sets the output voltage of the high-voltage power supply 2 to a high voltage for ESD testing, and turns on the contact of the high-voltage relay 3 so that the current from the high-voltage power supply 2 flows into each high-voltage capacitor 7 The power supply 2 is evenly accumulated in the high voltage for the ESD test. At this time, the high-voltage relay 4 is turned off by the timing controller 10F.

  Subsequently, after the high voltage relay 3 is turned off by the timing controller 10F, control is performed so that the contact of the high voltage relay 4 is turned on. Thereby, the high voltage for ESD test stored in each high-voltage capacitor 7 is applied to one terminal of each device 6 to be inspected from the high-voltage relay 4 through each application resistor 5. In this case, each high-voltage capacitor 7 and each device 6 to be inspected have a one-to-one correspondence, and a clear and accurate ESD test can be performed significantly efficiently.

  Thereafter, the ESD test determination in step S13 is performed.

  If there is no problem as a result of the predetermined ESD test determination, the test is terminated. If the result of the ESD test determination is a defective device and there is a problem, the repair process in the next step S14 is performed to repair the defective device.

  Repair processing is performed by applying voltage in step S14.

  In the repair process by applying the voltage, the output voltage of the high voltage power source 2 is set to a voltage for repair process by the timing controller 10F, and the high voltage relay 3 is turned on so that the current from the high voltage power source 2 is supplied to each high voltage capacitor 7. Into the voltage for repair processing of the high-voltage power supply 2 evenly. At this time, the contact of the high voltage relay 4 is turned off by the timing controller 10F.

  Subsequently, after the high voltage relay 3 is turned off by the timing controller 10F, control is performed so that the high voltage relay 4 is turned on. As a result, the voltage for repair processing stored in each high-voltage capacitor 7 is applied from the high-voltage relay 4 to the one terminal of each device 6 to be repaired through each applied resistor 5. In this case, each high-voltage capacitor 7 and each device 6 to be repaired have a one-to-one correspondence, and a clear and accurate repair process can be performed greatly efficiently.

  As described above, the high-voltage relays 3 and 4 are switched from the high-voltage power supply 2 side to the respective devices 6 to be repaired by the timing controller 10F, and the eight high-voltage capacitors 7 are charged or discharged to perform repair processing. A predetermined clear and accurate voltage for repair processing is applied from each of the voltage output units to each of the target devices 6 from the eight high-voltage capacitors 7. The switching operation of the high breakdown voltage relays 3 and 4 is performed at a specified timing by the timing controller 10F.

  Then, the repair process determination of step S15 is performed.

  At this time, the operational amplifier 31 detects a voltage value corresponding to the potential difference between both ends of the device 6 to be processed and the current value of the resistor 13 in a state in which the high-voltage relay 12 is turned on and a predetermined current is supplied to the device 6 to be processed. . The detection signal X from the operational amplifier 31 is input to the comparator 34 and compared with the reference value A, and is input to the comparator 36 and compared with the reference value B. This detection signal X is divided into three values: detection signal X> A, A ≧ detection signal X ≧ B, or B> detection signal X. The divided three values are input to the timing controller 10F. The timing controller 10F determines that the device 6 to be processed is a non-defective product when A ≧ detection signal X ≧ B, and the device 6 to be processed is not good when the detection signal X> A and B> detection signal X. Judged to be non-defective.

  If the device 6 to be processed is a non-defective product (Pass), the process is terminated. If the device 6 to be processed is a defective product (Fail), another repair process is performed by supplying a constant current in the next step S16.

  The repair process by the constant current supply in step S16 is controlled so that the high voltage relays 3 and 4 are turned off by the timing controller 10F and then the high voltage relay 12 for supplying constant current is turned on. As a result, the constant current stress caused by the current source is energized to one terminal of the device 6 to be processed from the high-voltage power supply 2 through the high-voltage relay 12 and further the resistor 13.

  Thus, the high voltage relays 3 and 4 for charging and discharging and the high voltage relay 12 for supplying constant current are switched on / off by the timing controller 10F, and the high voltage capacitor 7 is charged or discharged in step S14. Then, a predetermined voltage can be applied, and a constant current stress can be supplied to the device 6 to be processed in a subsequent step S16. The switching operation of the high-voltage relays 3, 4 and 12 is performed at a specified timing by the timing controller 10F. The constant current stress is supplied to the device 6 to be processed by a constant current source for a specified time by the high voltage relay 12.

  In short, a predetermined voltage and a constant current are sequentially supplied from the high voltage power supply 2 to the device 6 to be processed through a voltage application and current supply circuit 20A and a contact jig such as a socket arm. Supply a predetermined voltage and constant current to the device 6 to be processed by bringing the supply side terminal (one) and the GND side terminal (one) of the predetermined voltage and constant current into contact with each terminal of the device 6 to be processed. To do. In this case, predetermined voltage application and constant current application processing are sequentially performed for each device 6 to be processed.

  After the constant current supply process, the repair process determination in step S17 is performed.

  At this time, the operational amplifier 31 detects a voltage value corresponding to the potential difference between both ends of the device 6 to be processed and the current value of the resistor 13 in a state in which the high-voltage relay 12 is turned on and a predetermined current is supplied to the device 6 to be processed. . The detection signal X from the operational amplifier 31 is input to the comparator 34 and compared with the reference value A, and is input to the comparator 36 and compared with the reference value B. This detection signal X is divided into three values: detection signal X> A, A ≧ detection signal X ≧ B, or B> detection signal X. The divided three values are input to the timing controller 10F. The timing controller 10F determines that the device 6 to be processed is a non-defective product when A ≧ detection signal X ≧ B, and the device 6 to be processed is not good when the detection signal X> A and B> detection signal X. Judged to be non-defective.

  As a result of the predetermined repair process determination, if the device 6 to be processed is a non-defective product and there is no problem, the process ends. As a result of the repair process determination, if it is still a defective device and there is a problem, it is determined whether or not the specified number of times has ended in the next step S18, and when the specified number of times has ended, the repair process is terminated. If the specified number of times is not over in step S18, the process proceeds to the ESD test determination process in step S13 until the specified number is reached, and the subsequent repair process and its determination process are sequentially performed. Each repair process of the prescribed number of times is sequentially performed, and even if the determination result is a defective device and there is a problem, it is determined as a defective device and the process is terminated.

  Note that the leak defect part of the defective device may be changed to a strong stress condition, or both the repair process by applying a predetermined voltage and the repair process by applying a constant current are simultaneously applied with a stronger stress to The part can be burned out to be restored to the normal insulation state, and the leak defect can be burned out to be restored to the normal insulation state by increasing the specified number of times.

  FIG. 21 is a block diagram showing a wafer map and probing management mainly for the personal computer PC.

  In FIG. 21, the repair device 1, 1A, 1B, 1C, 1D, 1E, or 1F of the first embodiment is a personal computer PC that performs probing management, one high-voltage power supply 2, and an instruction from the personal computer PC. The timing controller 10, 10 A, 10 B, 10 C, 10 D, 10 E or 10 F that is driven in response to one circuit, one high-voltage relay 12 for supplying a constant current from the high-voltage power supply 2, and one resistor 13. Commonly, eight high-voltage relay 11 contacts (or high-voltage relay 3 is turned on) are simultaneously switched to the high-voltage power supply 2 side by the timing controllers 10, 10A, 10B, 10C, 10D, 10E, or 10F. A predetermined voltage from the high-voltage power source 2 is stored in the capacitor 7, and then the eight contacts of the high-voltage relay 11 at a predetermined timing. Alternatively, the high-voltage relay 4 is turned on) and is configured by eight parallel circuits that simultaneously switch to the eight applied resistors 5 side, and a predetermined voltage and constant current from the high-voltage power supply 2 are sequentially subjected to a plurality of inspection and repair processing targets. The voltage application circuit 20 or the voltage application and constant current supply circuit 20A (including the ESD circuit) that supplies the device 6 simultaneously and collectively, and the applied voltage from the voltage application circuit 20 or the voltage application and constant current supply circuit 20A The constant current is increased after the semiconductor wafer 16 on the wafer stage 15 is moved, and the eight sets of probes 24a and 24b of the probe card 25 are brought into contact with the terminals 6a and 6b of the eight devices 6, respectively. A prober 29 for applying or supplying to each of the terminals 6a and 6b by 8 sets of the probes 24a and 24b.When performing as many as 100,000 chips of the semiconductor wafer 16 sequentially as an ESD test, a repair process of applying a predetermined voltage and a repair process of supplying a constant current, probing is continuously performed using an automatic transfer device such as a prober 29.

  In the probing management, the personal computer PC is mainly used as a wafer map on the semiconductor wafer 16, that is, an address indicating the position of a large number (for example, 100,000) of semiconductor chips (devices) arranged in a matrix on the semiconductor wafer 16. In contrast, the semiconductor chip (device) in which address range is subjected to the ESD test, the repair process for applying a predetermined voltage and the repair process for supplying a constant current, and the semiconductor chip (device) in which address is defective in ESD withstand voltage Can be memorized. The ESD breakdown voltage is determined by measuring the leakage current (leakage defect) due to the reverse voltage of the diode structure of the semiconductor chip (device) with a measuring instrument and certifying it as a defective device. Device) address is stored in the personal computer PC.

  The timing controller 10, 10A, 10B, 10C, 10D, 10E or 10F applies not only the operation control (time and timing) of the high-voltage relays 11 and 12, but also the setting of the voltage and current level to be applied and the number of times of application. It operates according to the sequential that the polarity condition is preset by a program or the like.

  As described above, according to the first embodiment, the repair device 1, 1A, 1B, 1C, 1D, 1E that normalizes the insulation state of the leak defect portion by supplying electrical stress to the leak defect portion of the device 6 is provided. Alternatively, in 1F, a high voltage power source 2 serving as an electrical stress source, and voltage applying means for simultaneously applying each charge stress from the plurality of capacitors 7 charged by the high voltage power source 2 to the plurality of devices 6 simultaneously. And at least voltage application means of current supply means for supplying current stress from the high voltage power supply 2 to the plurality of devices 6.

  Accordingly, in order to apply one or more charge stresses from the high-voltage capacitor 7 as one or more voltage capacity means charged by the high-voltage power source 2 as the voltage source to the one or more devices 6, Even if the power supply capacity of 2 is small, it is not dependent on the power supply capacity by temporarily storing it in one or a plurality of high-voltage capacitors, so that a sufficient current capacity can be secured, and a defective device can be efficiently insulated normally. Can be recovered.

  In addition, during mass production, a plurality of devices 6 to be inspected and repaired are collectively subjected to ESD with an ESD applied voltage waveform conforming to the standard, and then the voltage is clearly and accurately expressed with a uniform predetermined voltage waveform or constant current waveform. By performing the applied repair process and the constant current supply repair process, a large number of electrical bias processes can be performed at once, and the defective device can be more efficiently recovered to a normal insulation state.

  Further, since at least the voltage application means of the voltage application means and the current supply means is provided with a determination means for automatically determining whether the device 6 is a leak defect device, a large number of electrical bias processes are performed at once. After that, it is possible to automatically perform the good / bad determination process more efficiently.

  Although not particularly described in detail in the first embodiment, the repair method of the present invention supplies electrical stress to the leak defect portion of the device 6 to normalize the insulation state of the leak defect portion. A voltage applying step in which the voltage applying means simultaneously applies each charge stress from a plurality of capacitor capacitors charged by a high voltage power source 2 as a voltage source to a plurality of devices simultaneously, The supply means has at least a voltage application step of a current supply step of supplying current stress from the high voltage power supply 2 to the plurality of devices 6. Furthermore, the repair method of the present invention includes a determination step in which the determination unit determines whether or not the device 6 is a leak defect device for at least the voltage application step of the voltage application step and the current supply step. In addition.

  The device manufacturing method uses the repair device 1, 1A, 1B, 1C, 1D, 1E, or 1F to supply electrical stress to the leak defect portion of the device 6 and to insulate the leak defect portion. By normalizing the device, the device is manufactured by recovering the defective device that has become defective by manufacturing the device by the manufacturing method.

  In the first embodiment, for example, a pinhole portion of an insulating film as a leak defect portion of the device 6 with respect to the target device 6 such as a protection diode of an LSI element or a light emitting element such as an LED element and a laser element. Explains about leak defect due to dust, leak defect due to film thickness difference of insulation film or insulation film on stepped part and cracks other than when upper conductive material enters and leaks The repair process for applying an electrical stress to the leak defect to normalize the leak has been described. However, the present invention is not limited to this, and when there is a leak defect in a wiring part such as an LSI element, the repair process is performed. Any of the repair devices 1, 1A to 1F of the present invention can also be used when supplying the voltage and current to burn out the leak portion.

  As mentioned above, although this invention has been illustrated using preferable Embodiment 1 of this invention, this invention should not be limited and limited to this Embodiment 1. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range from the description of the specific preferred embodiment 1 of the present invention based on the description of the present invention and the common general technical knowledge. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  The present invention restores a defective device to a normal insulation state as a result of an ESD tolerance test or a normal operation test for inspecting a device to be inspected such as a light emitting element such as an LSI element, an LED element, or a laser element. In the field of a repair apparatus and a method of manufacturing a semiconductor device using the repair apparatus, one or more charge stresses from one or more voltage capacity means charged by a voltage source are applied to one or more devices Therefore, a sufficient current capacity can be ensured without depending on the power supply capacity, and a defective device can be restored to a normal insulation state more efficiently. In addition, since the voltage applying means applies each charge stress from a plurality of voltage capacity means charged by a voltage source to a plurality of devices at the same time, a large number of electrical bias processes can be performed simultaneously. Thus, the defective device can be restored to the normal insulation state more efficiently.

DESCRIPTION OF SYMBOLS 1, 1A-1F Repair apparatus 2 High voltage power supply 3,4 High voltage | pressure-resistant relay 5 Applied resistance 5A Resistance group 6 Device 6a, 6b Device terminal 7 High voltage capacitor 7A Capacitance means group 8 Connection point of high voltage relay 3, 4 9 Device Connection point between the other terminal 6 and the other terminal of the high-voltage power supply 10, 10 A to 10 F Timing controller 11 High-voltage relay 12 High-voltage relay 13 Current limiting resistor 14 Application resistor 5 and device 6 connection point 20 Voltage application Circuit 20A Voltage application and current supply circuit 21 Circuit box (predetermined voltage and constant current supply board box including ESD)
22 wiring 23 connector 24a, 24b probe 25 probe card 26 voltage application and current application board 27, 28 central circular part 29 prober 31 operational amplifier 32 feedback resistance 33 ground resistance 34, 36 comparator 35 voltage output part of reference value A 37 reference value B voltage output section 38, 39 selector circuit

Claims (26)

In a repair apparatus that normalizes the insulation state of the leak defect portions by supplying electrical stress to the leak defect portions of a plurality of devices, respectively .
A repair apparatus comprising: a voltage source serving as an electrical stress source; and a voltage applying unit that simultaneously applies each of the charge stresses from a plurality of voltage capacity units charged by the voltage source to the plurality of devices simultaneously . The repair device according to claim 1,
The voltage application means is a repair device having the same circuit configuration as the number of devices to which a predetermined voltage is to be applied collectively. The repair device according to claim 1 or 2,
The voltage applying means includes
A plurality of voltage capacity means for storing a predetermined voltage from the voltage source; a plurality of voltage output sections for outputting each predetermined voltage from the plurality of voltage capacity means through respective resistors; and A repair device comprising a plurality of switching means for switching the voltage capacity means to be connected to the voltage source side or to be connected to the voltage output side. The repair device according to claim 2 ,
The repair apparatus having the same circuit configuration having circuits for the number of devices to be collectively applied independently from the voltage capacity means to the switching means and further to the voltage output section through the resistor. The repair device according to claim 4 ,
Repair apparatus having a plurality of substrates for mounting multiple the same circuit configuration. The repair device according to claim 1 ,
The repair apparatus is a voltage source in which the voltage source is a single voltage source having a charge processing capability corresponding to the capacities of the plurality of voltage capacity means corresponding to the number of devices to be collectively applied. The repair device according to claim 1,
When the voltage / current characteristic of the device is a non-linear characteristic, the charge stress voltage value is set to a value that does not exceed the breakdown voltage as an absolute value, and a voltage value that is 90% or more of the breakdown voltage. apparatus. The repair device according to claim 1,
The voltage source has a variable output voltage, and is a repair device capable of outputting a voltage level corresponding to an electrostatic breakdown voltage test. In the repair apparatus of Claim 1 or 3 ,
The plurality of voltage capacity means is a repair device having a capacity value corresponding to an electrostatic breakdown voltage test. In the repair apparatus of Claim 3 ,
The resistance of the voltage output unit is a repair device having a resistance value corresponding to an electrostatic breakdown voltage test. In the repair apparatus of Claim 1 or 3 ,
In the charge / discharge process of the voltage capacity means, when the repair process is performed using an automatic transfer processing apparatus, the voltage capacity means is charged during the contact movement period of the automatic transfer processing apparatus with respect to the device, and the device A repair device having a sequence process in which the voltage capacity means is discharged after contact by an automatic transfer processing device. The repair device according to claim 1 ,
A repair device further comprising current supply means for supplying current stress from the voltage source to a plurality of devices. The repair device according to claim 12 , wherein
A repair device having a timing controller that selectively operates two types of electrical stress, the charge stress and the current stress. The repair device according to claim 12 , wherein
After repair process in accordance with at least the voltage applying means of said voltage application means and said current supply means, while supplying by Ri to multiple devices on the current supply means a current from the voltage source, in the plurality of devices A repair device provided with determination means for automatically determining whether a device is the leak defective device. The repair device according to claim 14 , wherein
The determination unit is a repair device that performs at least one of voltage level detection determination and current level detection determination. The repair device according to claim 14 , wherein
A repair device in which at least the voltage application means among the determination means, the voltage application means, and the current supply means is installed on the same substrate. The repair device according to claim 14 , wherein
The determination unit is a repair device that outputs a determination result of at least one of a voltage level detection determination and a current level detection determination for a plurality of devices after repair processing to a timing controller. The repair device according to claim 14 , wherein
The determination unit outputs to the timing controller a determination signal obtained by dividing at least one of the voltage level detection determination and the current level detection determination for a plurality of devices after repair processing into a plurality of levels. The repair device according to claim 17 or 18 ,
The timing controller, the capacitance value of said plurality of voltage capacitive means and the resistance value of the resistor of the plurality of voltage output unit for outputting a predetermined voltage through a resistor from the plurality of voltage capacitive means, the determination of the determination means results repair apparatus having a variable setting Teite stage that variably set in accordance with. The repair device according to claim 19 ,
Wherein by controlling said variable setting means based on the control signal from the timing controller, the repair device for selecting and setting the volume group and resistance group that is pre-mounted to a predetermined capacitance value and a predetermined resistance value. The repair device according to claim 17 or 18 ,
The said timing controller is a repair apparatus which determines a repair process flow based on the quality of the determination result of the said determination means, or the grade of a defect. The repair device according to claim 17 or 18 ,
The timing controller is a repair device that sets one or a plurality of repair process flows. Using any of the repair apparatus of claim 1 to 22, a device manufacturing method to normalize insulation state of the leak defective portion by supplying the electrical stress against leakage defect portion of the device. In the repair method of using the repair device according to any one of claims 1 to 22 to supply an electrical stress to each of the leak defect portions of a plurality of devices to normalize the insulation state of the leak defect portions,
A repair method comprising a voltage applying step in which the voltage applying means simultaneously applies each charge stress from a plurality of voltage capacity means charged by a voltage source to a plurality of devices simultaneously . The repair method according to claim 24 , wherein
A repair method, wherein the current supply means further includes a current supply step of supplying current stress from the voltage source to a plurality of devices. The repair method according to claim 25 ,
In the state in which the current is supplied from the voltage source to the plurality of devices to be repaired by the current supply unit after the repair process of at least the voltage application step of the voltage application step and the current supply step, A repair method including a determination step of determining whether a device in a plurality of devices to be repaired is the leak defective device.