JP5495074B2 - 論理ユニット動作 - Google Patents

論理ユニット動作 Download PDF

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Publication number
JP5495074B2
JP5495074B2 JP2011534484A JP2011534484A JP5495074B2 JP 5495074 B2 JP5495074 B2 JP 5495074B2 JP 2011534484 A JP2011534484 A JP 2011534484A JP 2011534484 A JP2011534484 A JP 2011534484A JP 5495074 B2 JP5495074 B2 JP 5495074B2
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memory
command
data
commands
logical units
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Japanese (ja)
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JP2012507100A (ja
Inventor
エイ． マニング，トロイ
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マイクロン テクノロジー， インク．
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/1666—Error detection or correction of the data by redundancy in hardware where the redundant component is memory or memory area
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604—Improving or facilitating administration, e.g. storage management
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061—Improving I/O performance
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/74—Masking faults in memories by using spares or by reconfiguring using duplex memories, i.e. using dual copies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Quality & Reliability (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP2011534484A 2008-10-28 2009-10-14 論理ユニット動作 Active JP5495074B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/259,380 US8762621B2 (en) 2008-10-28 2008-10-28 Logical unit operation
US12/259,380 2008-10-28
PCT/US2009/005600 WO2010062302A1 (en) 2008-10-28 2009-10-14 Logical unit operation

Publications (2)

Publication Number Publication Date
JP2012507100A JP2012507100A (ja) 2012-03-22
JP5495074B2 true JP5495074B2 (ja) 2014-05-21

Family

ID=42118608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011534484A Active JP5495074B2 (ja) 2008-10-28 2009-10-14 論理ユニット動作

Country Status (7)

Country Link
US (2) US8762621B2 (zh)
EP (1) EP2347418B1 (zh)
JP (1) JP5495074B2 (zh)
KR (1) KR101363766B1 (zh)
CN (1) CN102239524B (zh)
TW (1) TWI443671B (zh)
WO (1) WO2010062302A1 (zh)

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US9070426B2 (en) 2013-09-09 2015-06-30 Kabushiki Kaisha Toshiba Semiconductor memory device capable of setting an internal state of a NAND flash memory in response to a set feature command
CN106775496B (zh) * 2013-10-23 2020-01-21 华为技术有限公司 一种存储数据处理方法及装置
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US9767045B2 (en) * 2014-08-29 2017-09-19 Memory Technologies Llc Control for authenticated accesses to a memory device
US9502118B2 (en) * 2014-09-26 2016-11-22 Intel Corporation NAND memory addressing
US10338817B2 (en) * 2014-12-30 2019-07-02 Sandisk Technologies Llc Systems and methods for storage recovery
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KR20180059208A (ko) * 2016-11-25 2018-06-04 삼성전자주식회사 리클레임 제어부를 갖는 메모리 콘트롤러 및 그에 따른 동작 제어 방법
CN106528000B (zh) * 2016-12-02 2019-12-31 苏州浪潮智能科技有限公司 一种数据存储装置及其读写性能优化方法、系统
US11450381B2 (en) 2019-08-21 2022-09-20 Micron Technology, Inc. Multi-deck memory device including buffer circuitry under array
US11164613B2 (en) 2019-12-02 2021-11-02 Micron Technology, Inc. Processing multi-cycle commands in memory devices, and related methods, devices, and systems
US11321000B2 (en) * 2020-04-13 2022-05-03 Dell Products, L.P. System and method for variable sparing in RAID groups based on drive failure probability
US11495309B2 (en) 2020-12-16 2022-11-08 Micron Technology, Inc. Initiating media management operation using voltage distribution metrics in memory system
US11861212B2 (en) 2022-02-24 2024-01-02 Silicon Motion, Inc. Flash memory device, controller, and method capable of performing access operation upon data unit(s) of multiple planes of flash memory device in response one simplified command sequence
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US11977776B2 (en) 2022-02-24 2024-05-07 Silicon Motion, Inc. Flash memory controller and method capable of sending read command or data toggle command to ask for flash memory device return more plane data of different planes
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Also Published As

Publication number Publication date
WO2010062302A1 (en) 2010-06-03
CN102239524A (zh) 2011-11-09
CN102239524B (zh) 2014-10-01
TWI443671B (zh) 2014-07-01
US9128637B2 (en) 2015-09-08
US20100106919A1 (en) 2010-04-29
KR101363766B1 (ko) 2014-02-14
US20140250261A1 (en) 2014-09-04
US8762621B2 (en) 2014-06-24
TW201023203A (en) 2010-06-16
EP2347418A1 (en) 2011-07-27
KR20110081878A (ko) 2011-07-14
EP2347418A4 (en) 2012-10-31
JP2012507100A (ja) 2012-03-22
EP2347418B1 (en) 2018-11-21

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