JP5489717B2 - 金属堆積のために基板表面を調整する方法および統合システム - Google Patents
金属堆積のために基板表面を調整する方法および統合システム Download PDFInfo
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- JP5489717B2 JP5489717B2 JP2009526621A JP2009526621A JP5489717B2 JP 5489717 B2 JP5489717 B2 JP 5489717B2 JP 2009526621 A JP2009526621 A JP 2009526621A JP 2009526621 A JP2009526621 A JP 2009526621A JP 5489717 B2 JP5489717 B2 JP 5489717B2
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- copper
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- metal
- vacuum
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- 238000000034 method Methods 0.000 title claims description 588
- 239000000758 substrate Substances 0.000 title claims description 401
- 230000003750 conditioning effect Effects 0.000 title description 34
- 238000001465 metallisation Methods 0.000 title description 10
- 230000008569 process Effects 0.000 claims description 486
- 239000010949 copper Substances 0.000 claims description 399
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 392
- 229910052802 copper Inorganic materials 0.000 claims description 389
- 238000012546 transfer Methods 0.000 claims description 243
- 230000004888 barrier function Effects 0.000 claims description 240
- 229910052751 metal Inorganic materials 0.000 claims description 231
- 239000002184 metal Substances 0.000 claims description 231
- 238000000151 deposition Methods 0.000 claims description 197
- 230000008021 deposition Effects 0.000 claims description 144
- 238000004140 cleaning Methods 0.000 claims description 127
- 229910000531 Co alloy Inorganic materials 0.000 claims description 119
- 239000000356 contaminant Substances 0.000 claims description 94
- 238000004320 controlled atmosphere Methods 0.000 claims description 93
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 85
- 239000001301 oxygen Substances 0.000 claims description 85
- 229910052760 oxygen Inorganic materials 0.000 claims description 85
- 239000012298 atmosphere Substances 0.000 claims description 75
- 239000011261 inert gas Substances 0.000 claims description 62
- 150000004706 metal oxides Chemical class 0.000 claims description 57
- 239000001257 hydrogen Substances 0.000 claims description 55
- 229910052739 hydrogen Inorganic materials 0.000 claims description 55
- 229910044991 metal oxide Inorganic materials 0.000 claims description 54
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 52
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 50
- 238000012545 processing Methods 0.000 claims description 50
- 239000005751 Copper oxide Substances 0.000 claims description 48
- 229910000431 copper oxide Inorganic materials 0.000 claims description 48
- 230000009467 reduction Effects 0.000 claims description 39
- 238000005137 deposition process Methods 0.000 claims description 32
- 239000000956 alloy Substances 0.000 claims description 26
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 21
- 238000011946 reduction process Methods 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000004043 dyeing Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 334
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 51
- 229910052710 silicon Inorganic materials 0.000 description 48
- 239000010703 silicon Substances 0.000 description 48
- 238000004544 sputter deposition Methods 0.000 description 33
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 30
- 239000000126 substance Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 28
- 229910021332 silicide Inorganic materials 0.000 description 27
- 239000000463 material Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 25
- 238000011049 filling Methods 0.000 description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 25
- 238000000231 atomic layer deposition Methods 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 229920005591 polysilicon Polymers 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000005240 physical vapour deposition Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000007747 plating Methods 0.000 description 18
- 238000009713 electroplating Methods 0.000 description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 17
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 16
- 238000001035 drying Methods 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 238000000454 electroless metal deposition Methods 0.000 description 12
- 239000003989 dielectric material Substances 0.000 description 11
- 230000001419 dependent effect Effects 0.000 description 10
- 230000009977 dual effect Effects 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 10
- 239000012964 benzotriazole Substances 0.000 description 9
- -1 copper-BTA complexes Chemical class 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000003631 wet chemical etching Methods 0.000 description 9
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 150000007524 organic acids Chemical class 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000004381 surface treatment Methods 0.000 description 8
- 230000003197 catalytic effect Effects 0.000 description 7
- 230000001737 promoting effect Effects 0.000 description 7
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 description 6
- 239000003638 chemical reducing agent Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 230000000536 complexating effect Effects 0.000 description 5
- 238000007872 degassing Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 235000005985 organic acids Nutrition 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000007792 addition Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000005429 filling process Methods 0.000 description 3
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- FEBFYWHXKVOHDI-UHFFFAOYSA-N [Co].[P][W] Chemical compound [Co].[P][W] FEBFYWHXKVOHDI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000011534 incubation Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 1
- 241000233805 Phoenix Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CPJYFACXEHYLFS-UHFFFAOYSA-N [B].[W].[Co] Chemical compound [B].[W].[Co] CPJYFACXEHYLFS-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000001880 copper compounds Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008241 heterogeneous mixture Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/513,634 | 2006-08-30 | ||
| US11/513,446 US8747960B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide |
| US11/513,634 US8771804B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a copper surface for selective metal deposition |
| US11/514,038 US8241701B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a barrier surface for copper deposition |
| US11/514,038 | 2006-08-30 | ||
| US11/513,446 | 2006-08-30 | ||
| PCT/US2007/018270 WO2008027216A2 (en) | 2006-08-30 | 2007-08-17 | Processes and integrated systems for engineering a substrate surface for metal deposition |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013266333A Division JP5820870B2 (ja) | 2006-08-30 | 2013-12-25 | 金属堆積のために基板表面を調整する方法および統合システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010503205A JP2010503205A (ja) | 2010-01-28 |
| JP2010503205A5 JP2010503205A5 (enrdf_load_stackoverflow) | 2010-09-24 |
| JP5489717B2 true JP5489717B2 (ja) | 2014-05-14 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009526621A Expired - Fee Related JP5489717B2 (ja) | 2006-08-30 | 2007-08-17 | 金属堆積のために基板表面を調整する方法および統合システム |
| JP2013266333A Expired - Fee Related JP5820870B2 (ja) | 2006-08-30 | 2013-12-25 | 金属堆積のために基板表面を調整する方法および統合システム |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013266333A Expired - Fee Related JP5820870B2 (ja) | 2006-08-30 | 2013-12-25 | 金属堆積のために基板表面を調整する方法および統合システム |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP5489717B2 (enrdf_load_stackoverflow) |
| CN (2) | CN101558186B (enrdf_load_stackoverflow) |
| MY (2) | MY148605A (enrdf_load_stackoverflow) |
| SG (1) | SG174752A1 (enrdf_load_stackoverflow) |
| TW (1) | TWI393186B (enrdf_load_stackoverflow) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090269507A1 (en) | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
| US8227344B2 (en) * | 2010-02-26 | 2012-07-24 | Tokyo Electron Limited | Hybrid in-situ dry cleaning of oxidized surface layers |
| CN103081089A (zh) * | 2010-08-31 | 2013-05-01 | 东京毅力科创株式会社 | 半导体装置的制造方法 |
| JP5560144B2 (ja) * | 2010-08-31 | 2014-07-23 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP2012054306A (ja) * | 2010-08-31 | 2012-03-15 | Tokyo Electron Ltd | 半導体装置の製造方法 |
| CN102468265A (zh) * | 2010-11-01 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | 连接插塞及其制作方法 |
| US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US8603913B1 (en) * | 2012-12-20 | 2013-12-10 | Lam Research Corporation | Porous dielectrics K value restoration by thermal treatment and or solvent treatment |
| US9040385B2 (en) | 2013-07-24 | 2015-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for cleaning substrate surface for hybrid bonding |
| JP2017500212A (ja) * | 2013-10-22 | 2017-01-05 | トーソー エスエムディー，インク． | 最適化テクスチャ処理表面と最適化の方法 |
| CN106463412A (zh) * | 2014-06-16 | 2017-02-22 | 英特尔公司 | 集成电路器件的金属之间的选择性扩散阻挡部 |
| US9997405B2 (en) * | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
| US9768060B2 (en) * | 2014-10-29 | 2017-09-19 | Applied Materials, Inc. | Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD |
| JP6998945B2 (ja) * | 2016-10-02 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | ルテニウムライナーと共に銅のエレクトロマイグレーションを改善するドープされた選択的な金属キャップ |
| JP6842159B2 (ja) * | 2016-12-13 | 2021-03-17 | サムコ株式会社 | プラズマ処理方法 |
| US10438846B2 (en) | 2017-11-28 | 2019-10-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Physical vapor deposition process for semiconductor interconnection structures |
| JP2019192892A (ja) | 2018-04-18 | 2019-10-31 | 東京エレクトロン株式会社 | 処理システムおよび処理方法 |
| KR20250109239A (ko) | 2018-12-05 | 2025-07-16 | 램 리써치 코포레이션 | 보이드 프리 (void free) 저응력 (low stress) 충진 |
| KR102301933B1 (ko) * | 2018-12-26 | 2021-09-15 | 한양대학교 에리카산학협력단 | 반도체 소자의 제조 방법 |
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2007
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- 2007-08-17 CN CN200780032409.XA patent/CN101558186B/zh active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101558186A (zh) | 2009-10-14 |
| JP5820870B2 (ja) | 2015-11-24 |
| JP2010503205A (ja) | 2010-01-28 |
| TW200832556A (en) | 2008-08-01 |
| CN103107120B (zh) | 2016-06-08 |
| CN101558186B (zh) | 2015-01-14 |
| SG174752A1 (en) | 2011-10-28 |
| TWI393186B (zh) | 2013-04-11 |
| MY148605A (en) | 2013-05-15 |
| JP2014099627A (ja) | 2014-05-29 |
| CN103107120A (zh) | 2013-05-15 |
| MY171542A (en) | 2019-10-17 |
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