CN101558186B - 对基板表面做预先处理以进行金属沉积的工艺和集成系统 - Google Patents

对基板表面做预先处理以进行金属沉积的工艺和集成系统 Download PDF

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Publication number
CN101558186B
CN101558186B CN200780032409.XA CN200780032409A CN101558186B CN 101558186 B CN101558186 B CN 101558186B CN 200780032409 A CN200780032409 A CN 200780032409A CN 101558186 B CN101558186 B CN 101558186B
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substrate
copper
metal
vacuum
integrated system
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Chinese (zh)
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CN101558186A (zh
Inventor
耶兹迪·多尔迪
弗里茨·C·雷德克
约翰·博伊德
威廉·蒂
蒂鲁吉拉伯利·阿鲁娜
阿瑟·M·霍瓦尔德
衡石·亚历山大·尹
约翰·韦尔托门
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Lam Research Corp
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Lam Research Corp
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Priority claimed from US11/513,446 external-priority patent/US8747960B2/en
Priority claimed from US11/513,634 external-priority patent/US8771804B2/en
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority claimed from PCT/US2007/018270 external-priority patent/WO2008027216A2/en
Publication of CN101558186A publication Critical patent/CN101558186A/zh
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
CN200780032409.XA 2006-08-30 2007-08-17 对基板表面做预先处理以进行金属沉积的工艺和集成系统 Active CN101558186B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US11/513,634 2006-08-30
US11/513,446 US8747960B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
US11/513,634 US8771804B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a copper surface for selective metal deposition
US11/514,038 US8241701B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a barrier surface for copper deposition
US11/514,038 2006-08-30
US11/513,446 2006-08-30
PCT/US2007/018270 WO2008027216A2 (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition

Related Child Applications (1)

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CN201310011701.0A Division CN103107120B (zh) 2006-08-30 2007-08-17 对基板表面做预先处理以进行金属沉积的工艺和集成系统

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CN101558186A CN101558186A (zh) 2009-10-14
CN101558186B true CN101558186B (zh) 2015-01-14

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CN200780032409.XA Active CN101558186B (zh) 2006-08-30 2007-08-17 对基板表面做预先处理以进行金属沉积的工艺和集成系统
CN201310011701.0A Active CN103107120B (zh) 2006-08-30 2007-08-17 对基板表面做预先处理以进行金属沉积的工艺和集成系统

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Country Status (5)

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JP (2) JP5489717B2 (enrdf_load_stackoverflow)
CN (2) CN101558186B (enrdf_load_stackoverflow)
MY (2) MY148605A (enrdf_load_stackoverflow)
SG (1) SG174752A1 (enrdf_load_stackoverflow)
TW (1) TWI393186B (enrdf_load_stackoverflow)

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US9040385B2 (en) 2013-07-24 2015-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for cleaning substrate surface for hybrid bonding
JP2017500212A (ja) * 2013-10-22 2017-01-05 トーソー エスエムディー，インク． 最適化テクスチャ処理表面と最適化の方法
CN106463412A (zh) * 2014-06-16 2017-02-22 英特尔公司 集成电路器件的金属之间的选择性扩散阻挡部
US9997405B2 (en) * 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
JP6998945B2 (ja) * 2016-10-02 2022-01-18 アプライド マテリアルズ インコーポレイテッド ルテニウムライナーと共に銅のエレクトロマイグレーションを改善するドープされた選択的な金属キャップ
JP6842159B2 (ja) * 2016-12-13 2021-03-17 サムコ株式会社 プラズマ処理方法
US10438846B2 (en) 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
KR20250109239A (ko) 2018-12-05 2025-07-16 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
CN113424308B (zh) 2019-02-13 2024-11-19 朗姆研究公司 带有抑制控制的钨特征填充
US20220344205A1 (en) * 2019-09-25 2022-10-27 Tokyo Electron Limited Substrate liquid processing method and substate liquid processing apparatus
US11555250B2 (en) * 2020-04-29 2023-01-17 Applied Materials, Inc. Organic contamination free surface machining
CN115867695A (zh) * 2020-05-08 2023-03-28 朗姆研究公司 电镀钴、镍及其合金
US20220375751A1 (en) * 2021-05-24 2022-11-24 Applied Materials, Inc. Integrated epitaxy and preclean system
CN115394911A (zh) * 2022-06-06 2022-11-25 昕原半导体(杭州)有限公司 阻变式存储器的下电极及制备方法
CN120376473A (zh) * 2025-06-26 2025-07-25 昆山科比精工设备有限公司 一种硅片镀铜前处理用转运装置

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US6365516B1 (en) * 2000-01-14 2002-04-02 Advanced Micro Devices, Inc. Advanced cobalt silicidation with in-situ hydrogen plasma clean
US6890853B2 (en) * 2000-04-25 2005-05-10 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module

Also Published As

Publication number Publication date
CN101558186A (zh) 2009-10-14
JP5820870B2 (ja) 2015-11-24
JP2010503205A (ja) 2010-01-28
TW200832556A (en) 2008-08-01
CN103107120B (zh) 2016-06-08
SG174752A1 (en) 2011-10-28
JP5489717B2 (ja) 2014-05-14
TWI393186B (zh) 2013-04-11
MY148605A (en) 2013-05-15
JP2014099627A (ja) 2014-05-29
CN103107120A (zh) 2013-05-15
MY171542A (en) 2019-10-17

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