JP5484579B2 - 窒素ガス噴射装置 - Google Patents
窒素ガス噴射装置 Download PDFInfo
- Publication number
- JP5484579B2 JP5484579B2 JP2012524634A JP2012524634A JP5484579B2 JP 5484579 B2 JP5484579 B2 JP 5484579B2 JP 2012524634 A JP2012524634 A JP 2012524634A JP 2012524634 A JP2012524634 A JP 2012524634A JP 5484579 B2 JP5484579 B2 JP 5484579B2
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen gas
- injection
- gas
- nitrogen
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims description 145
- 238000002347 injection Methods 0.000 title claims description 94
- 239000007924 injection Substances 0.000 title claims description 94
- 229910001873 dinitrogen Inorganic materials 0.000 title claims description 93
- 239000006227 byproduct Substances 0.000 claims description 71
- 238000006243 chemical reaction Methods 0.000 claims description 69
- 239000007789 gas Substances 0.000 claims description 65
- 229910052757 nitrogen Inorganic materials 0.000 claims description 26
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 43
- 230000008569 process Effects 0.000 description 36
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L23/00—Flanged joints
- F16L23/006—Attachments
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
Claims (5)
- 反応副産物ガスを移送する配管と直列に接続される一対のフランジ配管と、
前記一対のフランジ配管間で前記フランジ配管の壁体に沿ってリング状に結合され、前記フランジ配管の内部に窒素を供給するが、供給された窒素が円周方向に沿って移動可能に内部に中空が形成され、前記内部中空と連通し、供給された窒素ガスが前記フランジ配管の内部に噴射されるようにする多数の噴射孔を備える噴射ノズルと、
窒素ガスの供給のために前記噴射ノズルと連結された窒素供給ラインと、を備え、
前記噴射ノズルは、前記一対のフランジ配管の向かい合う壁体の端部の間に結合される結合部と、前記結合部の内側に形成されて前記フランジ配管の内周面から突出する突出部と、を備えるが、前記突出部には前記噴射孔が前記反応副産物ガスの流れ方向に窒素ガスを噴射するように前記反応副産物ガスが流出される方向に向かって形成されたことを特徴とする窒素ガス噴射装置。 - 前記噴射ノズルは、円周方向に沿って分割され、それぞれ反応副産物ガスの流入方向と流出方向に位置する第1の分割部と第2の分割部の結合からなり、前記第1の分割部には、円周方向に沿って前記中空の一部または全部を形成する第1の流れ溝が形成され、前記第2の分割部には、前記噴射孔が、前記第1の流れ溝に対応して連通するように形成されたことを特徴とする請求項1に記載の窒素ガス噴射装置。
- 前記突出部における噴射孔が形成されていない反対側の内周面は、反応副産物ガスに対する抵抗を減らすために、漸進的に内径が広くなるようにし、前記突出部の反対側の内周面と前記フランジ配管の内周面との厚さ差を減らしたことを特徴とする請求項1に記載の窒素ガス噴射装置。
- 前記窒素供給ラインの中間に設置され、前記噴射ノズルに供給される窒素ガスを加熱するヒーターをさらに備えることを特徴とする請求項1に記載の窒素ガス噴射装置。
- 前記窒素供給ラインの中間には、窒素ガスの供給量調節のためのオリフィス管がさらに設けられることを特徴とする請求項1に記載の窒素ガス噴射装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0073497 | 2009-08-10 | ||
KR1020090073497A KR101071937B1 (ko) | 2009-08-10 | 2009-08-10 | 질소가스 분사장치 |
PCT/KR2010/005097 WO2011019157A2 (ko) | 2009-08-10 | 2010-08-03 | 질소가스 분사장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013502068A JP2013502068A (ja) | 2013-01-17 |
JP5484579B2 true JP5484579B2 (ja) | 2014-05-07 |
Family
ID=43586612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012524634A Expired - Fee Related JP5484579B2 (ja) | 2009-08-10 | 2010-08-03 | 窒素ガス噴射装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110220023A1 (ja) |
JP (1) | JP5484579B2 (ja) |
KR (1) | KR101071937B1 (ja) |
CN (1) | CN102576654B (ja) |
WO (1) | WO2011019157A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8383428B2 (en) * | 2011-04-15 | 2013-02-26 | J-Solution Co., Ltd. | Exhaust pressure detector |
US9245717B2 (en) * | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
KR101430062B1 (ko) * | 2014-04-28 | 2014-08-14 | (주)해피글로벌솔루션 | 유체 가속형 진공배관 장치 |
JP6616265B2 (ja) * | 2015-10-16 | 2019-12-04 | 株式会社Kokusai Electric | 加熱部、基板処理装置、及び半導体装置の製造方法 |
KR101880349B1 (ko) * | 2016-05-27 | 2018-07-19 | 국방과학연구소 | 잉크젯 에어로졸 입자 생성 장치 |
KR101828427B1 (ko) | 2017-11-22 | 2018-03-29 | 주식회사 보야 | 파우더 프로텍팅 3웨이 밸브 |
CN108787645A (zh) * | 2018-05-14 | 2018-11-13 | 武汉华星光电半导体显示技术有限公司 | 管路清洁组件及管路清洁方法 |
WO2022164292A1 (ko) * | 2021-02-01 | 2022-08-04 | 최흥엽 | 배관 막힘 방지장치 |
KR102382384B1 (ko) * | 2021-02-16 | 2022-04-04 | (주)씨에스피 | 배관 보호 장치 및 이를 구비한 유해 가스 배기 시스템 |
KR102498680B1 (ko) * | 2021-05-18 | 2023-02-10 | (주)씨에스피 | 유량 제어 장치 및 이를 구비한 유해 가스 배기 시스템 |
Family Cites Families (19)
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US3019271A (en) * | 1958-09-08 | 1962-01-30 | Belge Produits Chimiques Sa | Process and apparatus for treatment of hydrocarbons |
US3177885A (en) * | 1962-05-25 | 1965-04-13 | Standard Oil Co | Method and apparatus for automatically controlling purge rates |
US3734111A (en) * | 1971-12-20 | 1973-05-22 | Phillips Petroleum Co | Apparatus for in-line mixing of fluids |
DE7242602U (ja) * | 1972-11-20 | 1976-04-29 | Hoogovens Ijmuiden B.V., Ijmuiden (Niederlande) | |
JP2763222B2 (ja) * | 1991-12-13 | 1998-06-11 | 三菱電機株式会社 | 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置 |
KR100227852B1 (en) * | 1996-12-18 | 1999-11-01 | Samsung Electronics Co Ltd | Vacuum exhaust device for preventing polymer absorption |
US5827370A (en) * | 1997-01-13 | 1998-10-27 | Mks Instruments, Inc. | Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace |
US6010576A (en) * | 1998-08-27 | 2000-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for cleaning an exhaust gas reactor |
US6197119B1 (en) * | 1999-02-18 | 2001-03-06 | Mks Instruments, Inc. | Method and apparatus for controlling polymerized teos build-up in vacuum pump lines |
JP4252702B2 (ja) * | 2000-02-14 | 2009-04-08 | 株式会社荏原製作所 | 反応副生成物の配管内付着防止装置及び付着防止方法 |
JP2005525282A (ja) * | 2001-10-05 | 2005-08-25 | ピレリ・コミュニケーションズ・ケーブルズ・アンド・システムズ・ユーエスエイ・エルエルシー | 光ファイバー着色及び硬化装置で使用するための窒素注入アッセンブリ |
KR100443908B1 (ko) * | 2001-10-25 | 2004-08-09 | 삼성전자주식회사 | 플라즈마 화학기상증착장치 및 이를 이용한나이트라이드막 형성방법 |
JP2003347227A (ja) * | 2002-05-30 | 2003-12-05 | Ckd Corp | 反応生成物付着防止排気配管 |
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JP2006303414A (ja) * | 2005-03-23 | 2006-11-02 | Hitachi Kokusai Electric Inc | 基板処理システム |
KR100791073B1 (ko) * | 2006-08-16 | 2008-01-02 | 삼성전자주식회사 | 난류 날개들을 갖는 배기 배관 및 배기 시스템 |
KR100670973B1 (ko) * | 2006-09-22 | 2007-01-17 | (주)보부하이테크 | 고온질소가속장치 |
KR100816627B1 (ko) * | 2007-10-18 | 2008-03-24 | 김호준 | 진공 배관 이음부용 씰링 |
US8148284B2 (en) * | 2008-02-11 | 2012-04-03 | Alstom Technology Ltd | Injection of liquid sorbent conditioning into a sorbent transporting passageway |
-
2009
- 2009-08-10 KR KR1020090073497A patent/KR101071937B1/ko active IP Right Grant
-
2010
- 2010-08-03 JP JP2012524634A patent/JP5484579B2/ja not_active Expired - Fee Related
- 2010-08-03 US US13/129,728 patent/US20110220023A1/en not_active Abandoned
- 2010-08-03 WO PCT/KR2010/005097 patent/WO2011019157A2/ko active Application Filing
- 2010-08-03 CN CN201080035368.1A patent/CN102576654B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20110016011A (ko) | 2011-02-17 |
CN102576654B (zh) | 2015-04-22 |
WO2011019157A2 (ko) | 2011-02-17 |
WO2011019157A3 (ko) | 2011-06-03 |
US20110220023A1 (en) | 2011-09-15 |
CN102576654A (zh) | 2012-07-11 |
JP2013502068A (ja) | 2013-01-17 |
KR101071937B1 (ko) | 2011-10-11 |
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