JP5479582B2 - 有機発光ダイオード - Google Patents
有機発光ダイオード Download PDFInfo
- Publication number
- JP5479582B2 JP5479582B2 JP2012512381A JP2012512381A JP5479582B2 JP 5479582 B2 JP5479582 B2 JP 5479582B2 JP 2012512381 A JP2012512381 A JP 2012512381A JP 2012512381 A JP2012512381 A JP 2012512381A JP 5479582 B2 JP5479582 B2 JP 5479582B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- organic light
- light emitting
- electrode
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 claims description 151
- 230000005855 radiation Effects 0.000 claims description 104
- 239000012044 organic layer Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000005670 electromagnetic radiation Effects 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000002178 crystalline material Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009023352 | 2009-05-29 | ||
| DE102009023352.0 | 2009-05-29 | ||
| DE102009037185.0 | 2009-08-12 | ||
| DE102009037185.0A DE102009037185B4 (de) | 2009-05-29 | 2009-08-12 | Organische Leuchtdiode |
| PCT/EP2010/057346 WO2010136537A1 (de) | 2009-05-29 | 2010-05-27 | Organische leuchtdiode |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012528434A JP2012528434A (ja) | 2012-11-12 |
| JP2012528434A5 JP2012528434A5 (enExample) | 2013-04-04 |
| JP5479582B2 true JP5479582B2 (ja) | 2014-04-23 |
Family
ID=43028648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012512381A Expired - Fee Related JP5479582B2 (ja) | 2009-05-29 | 2010-05-27 | 有機発光ダイオード |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8618729B2 (enExample) |
| EP (1) | EP2436058B1 (enExample) |
| JP (1) | JP5479582B2 (enExample) |
| KR (1) | KR101891208B1 (enExample) |
| CN (1) | CN102449803B (enExample) |
| DE (1) | DE102009037185B4 (enExample) |
| WO (1) | WO2010136537A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916135A (zh) * | 2011-08-05 | 2013-02-06 | 海洋王照明科技股份有限公司 | 倒置型有机电致发光器件及其制备方法 |
| DE102011086255A1 (de) * | 2011-11-14 | 2013-05-16 | Osram Opto Semiconductors Gmbh | Organisches licht emittierendes bauelement |
| US20130181241A1 (en) * | 2012-01-18 | 2013-07-18 | Moser Baer India Limited | Method of molding structures in a plastic substrate |
| DE102012203583B4 (de) * | 2012-03-07 | 2021-03-18 | Pictiva Displays International Limited | Organisches Licht emittierendes Bauelement |
| DE102012207151A1 (de) * | 2012-04-30 | 2013-10-31 | Osram Opto Semiconductors Gmbh | Organisches lichtemittierendes bauelement und verfahren zur herstellung eines organischen lichtemittierenden bauelements |
| CN103427032A (zh) * | 2012-05-14 | 2013-12-04 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
| JPWO2014020954A1 (ja) * | 2012-07-31 | 2016-07-21 | 日本電気株式会社 | 光学素子、照明装置、画像表示装置、光学素子の作動方法 |
| JP2014078499A (ja) * | 2012-09-20 | 2014-05-01 | Toshiba Corp | 有機電界発光素子および発光装置 |
| CN104009183A (zh) * | 2013-02-26 | 2014-08-27 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
| KR101517995B1 (ko) | 2013-03-29 | 2015-05-07 | 경희대학교 산학협력단 | 그래핀에 의하여 광증폭된 발광 소자 및 이의 제조방법 |
| WO2014181640A1 (ja) * | 2013-05-07 | 2014-11-13 | コニカミノルタ株式会社 | 発光素子および表示装置 |
| GB201309601D0 (en) * | 2013-05-29 | 2013-07-10 | Lomox Ltd | Organic light emitting diode structure |
| CN104851981B (zh) | 2014-02-18 | 2018-02-06 | 财团法人工业技术研究院 | 蓝光发光元件及发光元件 |
| KR102473574B1 (ko) * | 2014-07-24 | 2022-12-01 | 유니버셜 디스플레이 코포레이션 | 향상층(들)을 갖는 oled 디바이스 |
| US12364095B2 (en) | 2014-07-24 | 2025-07-15 | Universal Display Corporation | Organic electroluminescent devices |
| DE102014214721A1 (de) | 2014-07-25 | 2016-01-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung zur orts- und wellenlängenaufgelösten Erfassung von Lichtstrahlung, die von mindestens einer OLED oder LED emittiert wird |
| DE102014119538A1 (de) * | 2014-12-23 | 2016-06-23 | Osram Oled Gmbh | Optoelektronische Baugruppe und Verfahren zum Herstellen einer optoelektronischen Baugruppe |
| TWI543423B (zh) | 2015-01-26 | 2016-07-21 | 財團法人工業技術研究院 | 發光元件 |
| TWI596816B (zh) | 2015-03-10 | 2017-08-21 | 財團法人工業技術研究院 | 發光元件 |
| KR102369498B1 (ko) * | 2015-09-07 | 2022-03-04 | 삼성디스플레이 주식회사 | 미러 표시 장치 및 이의 제조 방법 |
| TWI573493B (zh) | 2016-02-19 | 2017-03-01 | 財團法人工業技術研究院 | 發光元件 |
| DE102016102939A1 (de) * | 2016-02-19 | 2017-08-24 | Osram Oled Gmbh | Lichtemittierendes Bauelement und Verfahren zum Herstellen eines lichtemittierenden Bauelements |
| US9859470B2 (en) | 2016-03-10 | 2018-01-02 | Epistar Corporation | Light-emitting device with adjusting element |
| FR3064114A1 (fr) * | 2017-03-15 | 2018-09-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente organique a rendement optimise par confinement de plasmons et dispositif d'affichage comprenant une pluralite de telles diodes |
| FR3065584B1 (fr) * | 2017-04-25 | 2019-05-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente organique a rendement optimise par suppression de plasmons |
| US11024775B2 (en) | 2017-10-17 | 2021-06-01 | Lumileds Llc | LED emitters with integrated nano-photonic structures to enhance EQE |
| KR102129945B1 (ko) * | 2018-11-29 | 2020-07-03 | 주식회사 알엠케이 | 광 투과율 가변 소자 및 이를 포함하는 디스플레이 장치용 컬러필터 및 스마트 윈도우 |
| US12414433B2 (en) | 2022-02-11 | 2025-09-09 | Universal Display Corporation | Organic electroluminescent devices |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2766562B2 (ja) * | 1991-07-11 | 1998-06-18 | シャープ株式会社 | 金属膜の保護膜 |
| US7106935B2 (en) * | 2002-01-07 | 2006-09-12 | Seagate Technology Llc | Apparatus for focusing plasmon waves |
| US7289685B1 (en) * | 2002-04-04 | 2007-10-30 | Ricoh Co., Ltd. | Paper based method for collecting digital data |
| US6970490B2 (en) * | 2002-05-10 | 2005-11-29 | The Trustees Of Princeton University | Organic light emitting devices based on the formation of an electron-hole plasma |
| DE10228939A1 (de) | 2002-06-28 | 2004-01-15 | Philips Intellectual Property & Standards Gmbh | Elektrolumineszierende Vorrichtung mit transparenter Kathode |
| GB0217900D0 (en) * | 2002-08-02 | 2002-09-11 | Qinetiq Ltd | Optoelectronic devices |
| JP4130163B2 (ja) * | 2003-09-29 | 2008-08-06 | 三洋電機株式会社 | 半導体発光素子 |
| JP5005164B2 (ja) * | 2004-03-03 | 2012-08-22 | 株式会社ジャパンディスプレイイースト | 発光素子,発光型表示装置及び照明装置 |
| DE102004042461A1 (de) * | 2004-08-31 | 2006-03-30 | Novaled Gmbh | Top-emittierendes, elektrolumineszierendes Bauelement mit Frequenzkonversionszentren |
| JP2006313667A (ja) * | 2005-05-06 | 2006-11-16 | Institute Of Physical & Chemical Research | 有機el素子 |
| WO2006134218A1 (en) * | 2005-06-15 | 2006-12-21 | Braggone Oy | Optical device structure |
| US7719182B2 (en) * | 2005-09-22 | 2010-05-18 | Global Oled Technology Llc | OLED device having improved light output |
| US7548021B2 (en) * | 2005-09-22 | 2009-06-16 | Eastman Kodak Company | OLED device having improved light output |
| US7710026B2 (en) * | 2005-12-08 | 2010-05-04 | Global Oled Technology Llc | LED device having improved output and contrast |
| US7466075B2 (en) * | 2005-12-08 | 2008-12-16 | Eastman Kodak Company | OLED device having improved output and contrast with light-scattering layer and contrast-enhancement layer |
| US20080001538A1 (en) * | 2006-06-29 | 2008-01-03 | Cok Ronald S | Led device having improved light output |
| US20080237611A1 (en) * | 2007-03-29 | 2008-10-02 | Cok Ronald S | Electroluminescent device having improved contrast |
| JP5013418B2 (ja) * | 2007-08-31 | 2012-08-29 | 国立大学法人九州大学 | 有機el素子 |
| US8136961B2 (en) * | 2007-11-28 | 2012-03-20 | Global Oled Technology Llc | Electro-luminescent area illumination device |
| DE102008022830A1 (de) * | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
| JP5530087B2 (ja) * | 2008-10-17 | 2014-06-25 | ユー・ディー・シー アイルランド リミテッド | 発光素子 |
-
2009
- 2009-08-12 DE DE102009037185.0A patent/DE102009037185B4/de not_active Expired - Fee Related
-
2010
- 2010-05-27 CN CN201080023423.5A patent/CN102449803B/zh not_active Expired - Fee Related
- 2010-05-27 US US13/375,214 patent/US8618729B2/en active Active
- 2010-05-27 KR KR1020117031459A patent/KR101891208B1/ko not_active Expired - Fee Related
- 2010-05-27 EP EP10720434.9A patent/EP2436058B1/de not_active Not-in-force
- 2010-05-27 WO PCT/EP2010/057346 patent/WO2010136537A1/de not_active Ceased
- 2010-05-27 JP JP2012512381A patent/JP5479582B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101891208B1 (ko) | 2018-08-24 |
| WO2010136537A1 (de) | 2010-12-02 |
| US20120181920A1 (en) | 2012-07-19 |
| KR20120034681A (ko) | 2012-04-12 |
| US8618729B2 (en) | 2013-12-31 |
| EP2436058B1 (de) | 2018-09-19 |
| CN102449803B (zh) | 2015-05-27 |
| CN102449803A (zh) | 2012-05-09 |
| DE102009037185A1 (de) | 2010-12-02 |
| JP2012528434A (ja) | 2012-11-12 |
| DE102009037185B4 (de) | 2018-11-22 |
| EP2436058A1 (de) | 2012-04-04 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| LAPS | Cancellation because of no payment of annual fees |