JP5478165B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5478165B2
JP5478165B2 JP2009206918A JP2009206918A JP5478165B2 JP 5478165 B2 JP5478165 B2 JP 5478165B2 JP 2009206918 A JP2009206918 A JP 2009206918A JP 2009206918 A JP2009206918 A JP 2009206918A JP 5478165 B2 JP5478165 B2 JP 5478165B2
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JP
Japan
Prior art keywords
transistor
electrode
electrically connected
input terminal
pulse output
Prior art date
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JP2009206918A
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English (en)
Japanese (ja)
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JP2011030171A (ja
JP2011030171A5 (https=
Inventor
博之 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009206918A priority Critical patent/JP5478165B2/ja
Publication of JP2011030171A publication Critical patent/JP2011030171A/ja
Publication of JP2011030171A5 publication Critical patent/JP2011030171A5/ja
Application granted granted Critical
Publication of JP5478165B2 publication Critical patent/JP5478165B2/ja
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  • Logic Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Shift Register Type Memory (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electronic Switches (AREA)
  • Control Of El Displays (AREA)
JP2009206918A 2009-06-30 2009-09-08 半導体装置 Active JP5478165B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009206918A JP5478165B2 (ja) 2009-06-30 2009-09-08 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009155849 2009-06-30
JP2009155849 2009-06-30
JP2009206918A JP5478165B2 (ja) 2009-06-30 2009-09-08 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013231650A Division JP5714079B2 (ja) 2009-06-30 2013-11-08 半導体装置及び表示装置

Publications (3)

Publication Number Publication Date
JP2011030171A JP2011030171A (ja) 2011-02-10
JP2011030171A5 JP2011030171A5 (https=) 2012-10-18
JP5478165B2 true JP5478165B2 (ja) 2014-04-23

Family

ID=43638325

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2009206918A Active JP5478165B2 (ja) 2009-06-30 2009-09-08 半導体装置
JP2013231650A Active JP5714079B2 (ja) 2009-06-30 2013-11-08 半導体装置及び表示装置
JP2014224212A Active JP6028009B2 (ja) 2009-06-30 2014-11-04 半導体装置及び表示装置
JP2016203512A Active JP6316373B2 (ja) 2009-06-30 2016-10-17 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2013231650A Active JP5714079B2 (ja) 2009-06-30 2013-11-08 半導体装置及び表示装置
JP2014224212A Active JP6028009B2 (ja) 2009-06-30 2014-11-04 半導体装置及び表示装置
JP2016203512A Active JP6316373B2 (ja) 2009-06-30 2016-10-17 半導体装置

Country Status (1)

Country Link
JP (4) JP5478165B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427602B (zh) 2006-10-17 2014-02-21 Semiconductor Energy Lab 脈衝輸出電路、移位暫存器及顯示裝置
KR101828960B1 (ko) 2010-03-02 2018-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
US8854867B2 (en) * 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
KR101940570B1 (ko) 2011-05-13 2019-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｅｌ 표시 장치 및 그 전자 기기
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
US9171842B2 (en) 2012-07-30 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Sequential circuit and semiconductor device
US8952723B2 (en) * 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
JP6097653B2 (ja) * 2013-08-05 2017-03-15 株式会社ジャパンディスプレイ 薄膜トランジスタ回路およびそれを用いた表示装置
JP6618779B2 (ja) * 2014-11-28 2019-12-11 株式会社半導体エネルギー研究所 半導体装置
US10330993B2 (en) * 2016-12-23 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Display device
JP7802756B2 (ja) * 2021-03-05 2026-01-20 株式会社半導体エネルギー研究所 半導体装置、表示装置、及び電子機器
WO2022252092A1 (zh) * 2021-05-31 2022-12-08 京东方科技集团股份有限公司 移位寄存器单元及其驱动方法、栅极驱动电路和显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001273785A (ja) * 2000-03-29 2001-10-05 Casio Comput Co Ltd シフトレジスタ及び電子装置
JP4425547B2 (ja) * 2003-01-17 2010-03-03 株式会社半導体エネルギー研究所 パルス出力回路、シフトレジスタ、および電子機器
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5525685B2 (ja) * 2006-10-17 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び電子機器
TWI427602B (zh) * 2006-10-17 2014-02-21 Semiconductor Energy Lab 脈衝輸出電路、移位暫存器及顯示裝置
JP5197058B2 (ja) * 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
CN101785065B (zh) * 2007-09-12 2013-05-15 夏普株式会社 移位寄存器
JP5538890B2 (ja) * 2007-09-12 2014-07-02 シャープ株式会社 シフトレジスタ
JP2009181612A (ja) * 2008-01-29 2009-08-13 Toshiba Mobile Display Co Ltd シフトレジスタ回路及び液晶表示装置

Also Published As

Publication number Publication date
JP5714079B2 (ja) 2015-05-07
JP2014064302A (ja) 2014-04-10
JP2015092427A (ja) 2015-05-14
JP6316373B2 (ja) 2018-04-25
JP2017011766A (ja) 2017-01-12
JP6028009B2 (ja) 2016-11-16
JP2011030171A (ja) 2011-02-10

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