JP5474999B2 - 相転移物質、その製造方法及び相転移物質を用いたモジュールの製造方法 - Google Patents
相転移物質、その製造方法及び相転移物質を用いたモジュールの製造方法 Download PDFInfo
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- JP5474999B2 JP5474999B2 JP2011539435A JP2011539435A JP5474999B2 JP 5474999 B2 JP5474999 B2 JP 5474999B2 JP 2011539435 A JP2011539435 A JP 2011539435A JP 2011539435 A JP2011539435 A JP 2011539435A JP 5474999 B2 JP5474999 B2 JP 5474999B2
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- 239000012782 phase change material Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000002904 solvent Substances 0.000 claims description 83
- 229910052751 metal Inorganic materials 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 80
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 22
- 230000007704 transition Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 150000001412 amines Chemical class 0.000 claims description 12
- 238000009835 boiling Methods 0.000 claims description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 11
- 238000007710 freezing Methods 0.000 claims description 10
- 230000008014 freezing Effects 0.000 claims description 10
- 230000002441 reversible effect Effects 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 9
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 8
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052792 caesium Inorganic materials 0.000 claims description 8
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 8
- 229940097275 indigo Drugs 0.000 claims description 8
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- 229910052700 potassium Inorganic materials 0.000 claims description 8
- 239000011591 potassium Substances 0.000 claims description 8
- 229910052701 rubidium Inorganic materials 0.000 claims description 8
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 8
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 6
- VBQDSLGFSUGBBE-UHFFFAOYSA-N benzyl(triethyl)azanium Chemical compound CC[N+](CC)(CC)CC1=CC=CC=C1 VBQDSLGFSUGBBE-UHFFFAOYSA-N 0.000 description 5
- YOUGRGFIHBUKRS-UHFFFAOYSA-N benzyl(trimethyl)azanium Chemical compound C[N+](C)(C)CC1=CC=CC=C1 YOUGRGFIHBUKRS-UHFFFAOYSA-N 0.000 description 5
- 229920006317 cationic polymer Polymers 0.000 description 5
- 239000003093 cationic surfactant Substances 0.000 description 5
- OGQYPPBGSLZBEG-UHFFFAOYSA-N dimethyl(dioctadecyl)azanium Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CCCCCCCCCCCCCCCCCC OGQYPPBGSLZBEG-UHFFFAOYSA-N 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- PDSVZUAJOIQXRK-UHFFFAOYSA-N trimethyl(octadecyl)azanium Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)C PDSVZUAJOIQXRK-UHFFFAOYSA-N 0.000 description 5
- GLFDLEXFOHUASB-UHFFFAOYSA-N trimethyl(tetradecyl)azanium Chemical compound CCCCCCCCCCCCCC[N+](C)(C)C GLFDLEXFOHUASB-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- RLGQACBPNDBWTB-UHFFFAOYSA-N cetyltrimethylammonium ion Chemical compound CCCCCCCCCCCCCCCC[N+](C)(C)C RLGQACBPNDBWTB-UHFFFAOYSA-N 0.000 description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- ZNEOHLHCKGUAEB-UHFFFAOYSA-N trimethylphenylammonium Chemical compound C[N+](C)(C)C1=CC=CC=C1 ZNEOHLHCKGUAEB-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052767 actinium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- -1 lanthanum metals Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052713 technetium Inorganic materials 0.000 description 2
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- HHZTZMZDAKROPW-UHFFFAOYSA-N C1(=CC=CC=C1)[N+](C)(C)C.C1(=CC=CC=C1)[N+](C)(C)C Chemical compound C1(=CC=CC=C1)[N+](C)(C)C.C1(=CC=CC=C1)[N+](C)(C)C HHZTZMZDAKROPW-UHFFFAOYSA-N 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- OPTOQCQBJWTWPN-UHFFFAOYSA-N [Si].[Ge].[Si] Chemical compound [Si].[Ge].[Si] OPTOQCQBJWTWPN-UHFFFAOYSA-N 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009739 binding Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000009089 cytolysis Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- TXXUSCXBCKURIH-UHFFFAOYSA-N hexadecyl(trimethyl)azanium Chemical compound CCCCCCCCCCCCCCCC[N+](C)(C)C.CCCCCCCCCCCCCCCC[N+](C)(C)C TXXUSCXBCKURIH-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/02—Materials undergoing a change of physical state when used
- C09K5/06—Materials undergoing a change of physical state when used the change of state being from liquid to solid or vice versa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/02—Materials undergoing a change of physical state when used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Combustion & Propulsion (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Powder Metallurgy (AREA)
- Catalysts (AREA)
Description
<式1>
[M(R)n]+a(s)+ae−(R溶液中) ⇔ [M(R)n−a](s)+aR(g) −Qn(J)
(M:金属、R:溶媒、n=1,2,…,6、a=1,2,…,6、そしてQn(J):n番目相転移段階の潜熱量)
本発明の別の実施例によると、前記金属と溶媒の比率は、1:0.1〜1:6であり得る。
金属を真空状態に置いて空気中の水分と酸素を除去する段階(S1段階)と、前記金属を粉末又は薄片で準備し、非活性気体雰囲気で一面が開封された容器に前記金属を注入し、前記一面に溶媒を注入でき、真空状態にできる連結装置を繋ぐ段階(S2段階)と、前記連結装置により真空状態を一定時間維持した後に周辺温度を前記溶媒の沸点または凝固点に維持して温度平衡状態を誘導し、前記連結装置を介して前記溶媒を注入する段階(S3段階)と、前記容器内の金属と溶媒を均一に混合して溶液を製造する段階(S4段階)と、前記容器を−10〜10℃で保管し前記溶液を膨張させて前記連結装置により流出させる段階(S5段階)を含むことを特徴とする相転移物質の製造方法を提供する。
<式1>
[M(R)n]+a(s)+ae−(R溶液中) ⇔ [M(R)n−a](s)+aR(g) −Qn(J)
(M:金属、R:溶媒、n=1,2,…,6、a=1,2,…,6、そしてQn(J):n番目相転移段階の潜熱量)
本発明のまた別の実施例によると、前記金属と溶媒の比率は、1:0.1〜1:6であり得る。
金属を真空状態に置いて空気中の水分と酸素を除去する段階(S6段階)と、前記金属を粉末又は薄片で準備し、非活性気体雰囲気で一面が開封された第1容器と第2容器に前記金属をそれぞれ注入し、それぞれの一面に溶媒を注入でき、真空状態にできる第1連結装置及び第2連結装置をそれぞれ繋げる段階(S7段階)と、前記第1、2連結装置により真空状態を一定時間維持した後に周辺温度を前記溶媒の沸点または凝固点に維持して温度平衡状態を誘導し、前記第1、2連結装置を介して前記溶媒を注入する段階(S8段階)と、前記第1、2容器内の金属と溶媒を均一に混合して溶液を製造する段階(S9段階)と、前記第1、2容器を−10〜10℃で保管して前記溶液を膨張させ、前記連結装置により流出させる段階(S10段階)と、前記第1、2容器を常温で結合するがその間に絶縁体を挿入する段階(S11段階);を含むことを特徴とする相転移物質を用いたモジュール(module)の製造方法を提供する。
<式1>
[M(R)n]+a(s)+ae−(R溶液中) ⇔ [M(R)n−a](s)+aR(g) −Qn(J)
(M:金属、R:溶媒、n=1,2,…,6、a=1,2,…,6、そしてQn(J):n番目相転移段階の潜熱量)
本発明のまた別の実施例によると、前記金属と溶媒の比率は、1:0.1〜1:6であり得る。
<式1>
[M(R)n]+a(s)+ae−(R溶液中) ⇔ [M(R)n−a](s)+aR(g) −Qn(J)
(M:金属、R:溶媒、n=1,2,…,6、a=1,2,…,6、そしてQn(J):n番目相転移段階の潜熱量)
前記の可逆的多段階相転移特性は、図3によって説明できる。図3は、本発明の相転移物質の相転移グラフである。
Claims (5)
- 配位結合を形成する金属及び前記金属を溶解できる溶媒を含む相転移物質であって、
前記金属と溶媒の比率は、1:0.1〜1:6であり、
前記金属は、リチウム、バリウム、ナトリウム、マグネシウム、カリウム、カルシウム、ルビジウム、ストロンチウム、セシウムからなる群から選ばれる少なくとも一つであり、
前記溶媒は、アンモニア、又は主鎖の長さが炭素数4以下のアミン類であり、次式1により表される可逆的多段階相転移特性を有することを特徴とする相転移物質。
<式1>
[M(R) n ] +a (s)+ae − (R溶液中) ⇔ [M(R) n−a ](s)+aR(g) −Q n (J)
(M:金属、R:溶媒、n=1,2,…,6、a=1,2,…,6、そしてQ n (J):n番目相転移段階の潜熱量) - 金属を真空状態に置いて空気中の水分と酸素を除去する段階(S1段階);
前記金属を粉末又は薄片で準備し、非活性気体雰囲気で一面が開封された容器に前記金属を注入し、前記一面に溶媒を注入でき、真空状態にできる連結装置を繋ぐ段階(S2段階);
前記連結装置により真空状態を一定時間維持した後に周辺温度を前記溶媒の沸点または凝固点に維持して温度平衡状態を誘導し、前記連結装置を介して前記溶媒を注入する段階(S3段階);
前記容器内の金属と溶媒を均一に混合して溶液を製造する段階(S4段階);
前記容器を−10〜10℃で保管し前記溶液を膨張させて前記連結装置により流出させる段階(S5段階);を含む相転移物質の製造方法であって、
前記金属と溶媒の比率は、1:0.1〜1:6であり、
前記金属は、リチウム、バリウム、ナトリウム、マグネシウム、カリウム、カルシウム、ルビジウム、ストロンチウム、セシウムからなる群から選ばれる少なくとも一つであり、
前記溶媒は、アンモニア、又は主鎖の長さが炭素数4以下のアミン類であり、次式1により表される可逆的多段階相転移特性を有することを特徴とする相転移物質の製造方法。
<式1>
[M(R) n ] +a (s)+ae − (R溶液中) ⇔ [M(R) n−a ](s)+aR(g) −Q n (J)
(M:金属、R:溶媒、n=1,2,…,6、a=1,2,…,6、そしてQ n (J):n番目相転移段階の潜熱量) - 前記S5段階は、前記溶液の色が濃い藍色になるように前記S3段階から繰り返す段階をさらに含むことを特徴とする請求項2に記載の相転移物質の製造方法。
- 金属を真空状態に置いて空気中の水分と酸素を除去する段階(S1段階);
前記金属を粉末又は薄片で準備し、非活性気体雰囲気で一面が開封された第1容器と第2容器に前記金属をそれぞれ注入し、それぞれの一面に溶媒を注入でき、真空状態にできる第1連結装置及び第2連結装置をそれぞれ繋げる段階(S2段階);
前記第1、2連結装置により真空状態を一定時間維持した後に周辺温度を前記溶媒の沸点または凝固点に維持して温度平衡状態を誘導し、前記第1、2連結装置を介して前記溶媒を注入する段階(S3段階);
前記第1、2容器内の金属と溶媒を均一に混合して溶液を製造する段階(S4段階);
前記第1、2容器を−10〜10℃で保管して前記溶液を膨張させ、前記連結装置により流出させる段階(S5段階);
前記第1、2容器を常温で結合するがその間に絶縁体を挿入する段階(S6段階);を含む、相転移物質を用いたモジュールの製造方法であって、
前記金属と溶媒の比率は、1:0.1〜1:6であり、
前記金属は、リチウム、バリウム、ナトリウム、マグネシウム、カリウム、カルシウム、ルビジウム、ストロンチウム、セシウムからなる群から選ばれる少なくとも一つであり、
前記溶媒は、アンモニア、又は主鎖の長さが炭素数4以下のアミン類であり、次式1により表される可逆的多段階相転移特性を有することを特徴とする相転移物質を用いたモジュールの製造方法。
<式1>
[M(R) n ] +a (s)+ae − (R溶液中) ⇔ [M(R) n−a ](s)+aR(g) −Q n (J)
(M:金属、R:溶媒、n=1,2,…,6、a=1,2,…,6、そしてQ n (J):n番目相転移段階の潜熱量) - 前記S5段階は、前記溶液の色が濃い藍色になるように前記S3段階から繰り返す段階をさらに含むことを特徴とする請求項4に記載の相転移物質を用いたモジュールの製造方法。
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