JP5474946B2 - パッケージ応力を補償する応力逃がしを有する容量性センサ - Google Patents

パッケージ応力を補償する応力逃がしを有する容量性センサ Download PDF

Info

Publication number
JP5474946B2
JP5474946B2 JP2011511659A JP2011511659A JP5474946B2 JP 5474946 B2 JP5474946 B2 JP 5474946B2 JP 2011511659 A JP2011511659 A JP 2011511659A JP 2011511659 A JP2011511659 A JP 2011511659A JP 5474946 B2 JP5474946 B2 JP 5474946B2
Authority
JP
Japan
Prior art keywords
section
movable element
rotating shaft
forming
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011511659A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011521797A5 (enExample
JP2011521797A (ja
Inventor
リン、イーチェン
シー． マクニール、アンドリュー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2011521797A publication Critical patent/JP2011521797A/ja
Publication of JP2011521797A5 publication Critical patent/JP2011521797A5/ja
Application granted granted Critical
Publication of JP5474946B2 publication Critical patent/JP5474946B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
JP2011511659A 2008-05-29 2009-03-11 パッケージ応力を補償する応力逃がしを有する容量性センサ Expired - Fee Related JP5474946B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/129,548 US8096182B2 (en) 2008-05-29 2008-05-29 Capacitive sensor with stress relief that compensates for package stress
US12/129,548 2008-05-29
PCT/US2009/036755 WO2009145963A1 (en) 2008-05-29 2009-03-11 Capacitive sensor with stress relief that compensates for package stress

Publications (3)

Publication Number Publication Date
JP2011521797A JP2011521797A (ja) 2011-07-28
JP2011521797A5 JP2011521797A5 (enExample) 2012-04-26
JP5474946B2 true JP5474946B2 (ja) 2014-04-16

Family

ID=41377460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011511659A Expired - Fee Related JP5474946B2 (ja) 2008-05-29 2009-03-11 パッケージ応力を補償する応力逃がしを有する容量性センサ

Country Status (4)

Country Link
US (1) US8096182B2 (enExample)
JP (1) JP5474946B2 (enExample)
CN (1) CN102046514B (enExample)
WO (1) WO2009145963A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009026462B4 (de) * 2009-05-26 2023-03-30 Robert Bosch Gmbh Beschleunigungssensor
JP2011022137A (ja) * 2009-06-15 2011-02-03 Rohm Co Ltd Ｍｅｍｓ装置及びその製造方法
JP5287690B2 (ja) * 2009-12-11 2013-09-11 株式会社豊田中央研究所 光偏向装置
EP2508874B1 (en) * 2011-04-08 2019-06-05 ams international AG Capacitive sensor, integrated circuit, electronic device and method
DE102011076551B4 (de) * 2011-05-26 2024-02-22 Robert Bosch Gmbh Inertialsensor
US9069005B2 (en) * 2011-06-17 2015-06-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitance detector for accelerometer and gyroscope and accelerometer and gyroscope with capacitance detector
TWI437231B (zh) * 2011-08-22 2014-05-11 Richwave Technology Corp 可補償電容偏移的微機電電路及其方法
US9164117B2 (en) 2012-10-19 2015-10-20 Honeywell International Inc. Stress reduction components for sensors
JP6075062B2 (ja) * 2012-12-27 2017-02-08 セイコーエプソン株式会社 アクチュエーター、光スキャナーおよび画像形成装置
US9470709B2 (en) 2013-01-28 2016-10-18 Analog Devices, Inc. Teeter totter accelerometer with unbalanced mass
US9297825B2 (en) 2013-03-05 2016-03-29 Analog Devices, Inc. Tilt mode accelerometer with improved offset and noise performance
FR3003030B1 (fr) * 2013-03-11 2015-04-17 Commissariat Energie Atomique Dispositif de detection de contrainte mecanique a capteur capacitif, ensemble de dispositifs de detection et dispositif de localisation de toucher a capteurs capacitifs
US9383384B2 (en) * 2013-05-31 2016-07-05 Honeywell International Inc. Extended-range closed-loop accelerometer
US9235937B1 (en) 2013-06-05 2016-01-12 Analog Devices, Inc. Mounting method for satellite crash sensors
JP6655281B2 (ja) * 2014-08-19 2020-02-26 セイコーエプソン株式会社 物理量センサー、電子機器および移動体
CN105699693B (zh) * 2014-12-11 2019-04-12 意法半导体股份有限公司 具有减少漂移功能的z轴微机电检测结构
US10073113B2 (en) 2014-12-22 2018-09-11 Analog Devices, Inc. Silicon-based MEMS devices including wells embedded with high density metal
US10473686B2 (en) * 2014-12-25 2019-11-12 Goertek Inc. Inertia measurement module and triaxial accelerometer
US10078098B2 (en) 2015-06-23 2018-09-18 Analog Devices, Inc. Z axis accelerometer design with offset compensation
US9663348B1 (en) 2015-11-09 2017-05-30 Nxp Usa, Inc. MEMS device with isolation sub-frame structure
US10203352B2 (en) * 2016-08-04 2019-02-12 Analog Devices, Inc. Anchor tracking apparatus for in-plane accelerometers and related methods
CN110501522B (zh) * 2019-09-16 2022-10-11 上海矽睿科技股份有限公司 一种微机电系统的电容式加速度计
DE102020210135A1 (de) 2020-08-11 2022-02-17 Robert Bosch Gesellschaft mit beschränkter Haftung Mikroelektromechanisches System, Verfahren zur Herstellung eines mikroelektromechanischen Systems
US12055927B2 (en) * 2021-02-26 2024-08-06 Honeywell International Inc. Thermal metamaterial for low power MEMS thermal control
CN115219077B (zh) * 2022-07-13 2025-06-06 北京航空航天大学 一种柔性电容式压力传感器及其制备方法
CN119197296B (zh) * 2024-11-27 2025-04-08 中国船舶集团有限公司第七〇七研究所 一种温度冲击下的mems应变测量装置

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4736629A (en) * 1985-12-20 1988-04-12 Silicon Designs, Inc. Micro-miniature accelerometer
EP0547742B1 (en) * 1991-12-19 1995-12-13 Motorola, Inc. Triaxial accelerometer
ATE269588T1 (de) * 1993-02-04 2004-07-15 Cornell Res Foundation Inc Mikrostrukturen und einzelmask, einkristall- herstellungsverfahren
US5563343A (en) * 1993-05-26 1996-10-08 Cornell Research Foundation, Inc. Microelectromechanical lateral accelerometer
US5610335A (en) * 1993-05-26 1997-03-11 Cornell Research Foundation Microelectromechanical lateral accelerometer
JP3305516B2 (ja) * 1994-10-31 2002-07-22 株式会社東海理化電機製作所 静電容量式加速度センサ及びその製造方法
JPH09119943A (ja) * 1995-10-24 1997-05-06 Wako:Kk 加速度センサ
US5806365A (en) * 1996-04-30 1998-09-15 Motorola, Inc. Acceleration sensing device on a support substrate and method of operation
US5948981A (en) * 1996-05-21 1999-09-07 Alliedsignal Inc. Vibrating beam accelerometer
KR19980016188A (ko) 1996-08-27 1998-05-25 김주용 정전용량형 마이크로 기계센서 및 그 제조방법
JP4176849B2 (ja) * 1997-05-08 2008-11-05 株式会社ワコー センサの製造方法
US6009757A (en) * 1997-07-28 2000-01-04 Texas Instruments Incorporated Voltage regulated pressure transducer apparatus
DE69942486D1 (de) * 1998-01-15 2010-07-22 Cornell Res Foundation Inc Grabenisolation für mikromechanische bauelemente
US6105428A (en) * 1998-12-10 2000-08-22 Motorola, Inc. Sensor and method of use
DE20122373U1 (de) * 2000-08-03 2005-05-19 Reflectivity Inc., Sunnyvale Projektionssystem zum Projizieren eines Farbbildes
US6792804B2 (en) * 2001-10-19 2004-09-21 Kionix, Inc. Sensor for measuring out-of-plane acceleration
US6701786B2 (en) * 2002-04-29 2004-03-09 L-3 Communications Corporation Closed loop analog gyro rate sensor
US7005193B2 (en) 2003-04-29 2006-02-28 Motorola, Inc. Method of adding mass to MEMS structures
US6845670B1 (en) * 2003-07-08 2005-01-25 Freescale Semiconductor, Inc. Single proof mass, 3 axis MEMS transducer
US20050092085A1 (en) * 2003-11-04 2005-05-05 Shyu-Mou Chen Solid-state gyroscopes and planar three-axis inertial measurement unit
KR100513345B1 (ko) * 2003-12-20 2005-09-07 삼성전기주식회사 정전용량형 ｚ축 가속도계
JP4446038B2 (ja) * 2004-05-11 2010-04-07 国立大学法人東北大学 トーションバーを用いた静電駆動型マイクロミラーデバイス
US7057794B2 (en) * 2004-05-19 2006-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Micromirror for MEMS device
US20080276706A1 (en) * 2004-09-27 2008-11-13 Conti Temic Microelectronic Gmbh Rotation Speed Sensor
CN1605871A (zh) * 2004-10-18 2005-04-13 北京大学 梳齿电容式z轴加速度计及其制备方法
US7337671B2 (en) * 2005-06-03 2008-03-04 Georgia Tech Research Corp. Capacitive microaccelerometers and fabrication methods
JP2006340531A (ja) * 2005-06-03 2006-12-14 Matsushita Electric Works Ltd アクチュエータ
US7430909B2 (en) 2005-11-22 2008-10-07 Kionix, Inc. Tri-axis accelerometer
US8129801B2 (en) 2006-01-06 2012-03-06 Honeywell International Inc. Discrete stress isolator attachment structures for MEMS sensor packages
JP2008003309A (ja) * 2006-06-22 2008-01-10 Fujifilm Corp 微小電気機械素子及び微小電気機械素子アレイ並びに変調装置
US7637160B2 (en) * 2006-06-30 2009-12-29 Freescale Semiconductor, Inc. MEMS suspension and anchoring design
US7628072B2 (en) * 2006-07-19 2009-12-08 Freescale Semiconductor, Inc. MEMS device and method of reducing stiction in a MEMS device
US7767483B1 (en) * 2006-07-25 2010-08-03 The United States Of America As Represented By The Secretary Of The Navy Dual-suspension system for MEMS-based devices and method for fabricating same
US7487661B2 (en) * 2006-10-11 2009-02-10 Freescale Semiconductor, Inc. Sensor having free fall self-test capability and method therefor
US7851876B2 (en) * 2006-10-20 2010-12-14 Hewlett-Packard Development Company, L.P. Micro electro mechanical system
US7640805B2 (en) * 2006-12-18 2010-01-05 Akustica, Inc. Proof-mass with supporting structure on integrated circuit-MEMS platform
US7784344B2 (en) * 2007-11-29 2010-08-31 Honeywell International Inc. Integrated MEMS 3D multi-sensor
US7793542B2 (en) * 2007-12-28 2010-09-14 Freescale Semiconductor, Inc. Caddie-corner single proof mass XYZ MEMS transducer
US7863698B2 (en) * 2009-04-03 2011-01-04 Invensense, Inc. Performance-enhancing two-sided MEMS anchor design for vertically integrated micromachined devices

Also Published As

Publication number Publication date
CN102046514A (zh) 2011-05-04
US8096182B2 (en) 2012-01-17
CN102046514B (zh) 2013-03-27
US20090293616A1 (en) 2009-12-03
JP2011521797A (ja) 2011-07-28
WO2009145963A1 (en) 2009-12-03

Similar Documents

Publication Publication Date Title
JP5474946B2 (ja) パッケージ応力を補償する応力逃がしを有する容量性センサ
US7578190B2 (en) Symmetrical differential capacitive sensor and method of making same
EP2106553B1 (en) Differential capacitive sensor and method of making same
EP2411817B1 (en) Vertically integrated mems acceleration transducer
US9176157B2 (en) Micro-electromechanical structure with low sensitivity to thermo-mechanical stress
JP3941694B2 (ja) 加速度センサ
US6000287A (en) Capacitor center of area sensitivity in angular motion micro-electromechanical systems
JP4787746B2 (ja) トランスデューサの製造方法
US8925384B2 (en) MEMS sensor with stress isolation and method of fabrication
JP5637638B2 (ja) 応力分離部を有するｍｅｍｓデバイスおよび製造方法
JPH06302832A (ja) 加速度センサ
TW201026590A (en) Transducer with decoupled sensing in mutually orthogonal directions
TW202043135A (zh) 微機械構件
US10544037B2 (en) Integrated semiconductor device and manufacturing method
US6215645B1 (en) Differential capacitor structure
JP6555238B2 (ja) 力学量センサおよびその製造方法
WO2018030045A1 (ja) 力学量センサおよびその製造方法

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120227

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120307

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120307

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130903

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131203

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140205

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees