JP5456193B2 - 多孔質拡散反射器を有するled - Google Patents
多孔質拡散反射器を有するled Download PDFInfo
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- JP5456193B2 JP5456193B2 JP2013039169A JP2013039169A JP5456193B2 JP 5456193 B2 JP5456193 B2 JP 5456193B2 JP 2013039169 A JP2013039169 A JP 2013039169A JP 2013039169 A JP2013039169 A JP 2013039169A JP 5456193 B2 JP5456193 B2 JP 5456193B2
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- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 50
- 238000005253 cladding Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000011148 porous material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 218
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 106
- 229910005540 GaP Inorganic materials 0.000 description 105
- 238000000034 method Methods 0.000 description 26
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
- 230000008569 process Effects 0.000 description 19
- 238000005530 etching Methods 0.000 description 16
- 238000000605 extraction Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009290 primary effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
Claims (1)
- 成長基板上に成長される第1クラッド層、活性層及び第2クラッド層を含む複数のLED層であって、前記第1クラッド層が第1伝導性型であり、前記第2クラッド層が反対性質の第2伝導性型である、複数のLED層と、
前記第2クラッド層を覆う多孔質半導体層であって、前記多孔質半導体層が、サブミクロンの最小直径を有する空孔を含み、前記空孔が前記活性層によって生成される光を拡散する特性を有する、多孔質半導体層と、
前記多孔質半導体層を覆う第1金属であって、電流の大半が前記多孔質半導体層の空孔領域を通じて実質的に伝導されることなく前記第1金属及び前記第2クラッド層間において流れるように、前記第2クラッド層と電気的に接触する第1金属とを含む発光ダイオード(LED)構造体であって、
前記多孔質半導体層は、前記多孔質半導体層に渡って分配される、第1のレベルのドーピングを有する、多孔質のGaP系の材料の領域と、前記第1のドーピングよりも高い第2のレベルのドーピングを有する、非多孔質のGaP系の材料の複数の別個の領域とを含み、
多孔質のGaP系の材料及び非多孔質のGaP系の材料の領域の表面は、実質的に共平面であり、
前記第1金属は、前記非多孔質のGaP系の材料に直接的に電気的に接触するとともに、多孔質のGaP系の材料及び非多孔質のGaP系の材料の領域の表面を覆う、発光ダイオード構造体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/692,132 US7601989B2 (en) | 2007-03-27 | 2007-03-27 | LED with porous diffusing reflector |
US11/692,132 | 2007-03-27 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010500416A Division JP5258872B2 (ja) | 2007-03-27 | 2008-03-27 | 多孔質拡散反射器を有するled |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013102239A JP2013102239A (ja) | 2013-05-23 |
JP5456193B2 true JP5456193B2 (ja) | 2014-03-26 |
Family
ID=39592805
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010500416A Active JP5258872B2 (ja) | 2007-03-27 | 2008-03-27 | 多孔質拡散反射器を有するled |
JP2013039169A Active JP5456193B2 (ja) | 2007-03-27 | 2013-02-28 | 多孔質拡散反射器を有するled |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010500416A Active JP5258872B2 (ja) | 2007-03-27 | 2008-03-27 | 多孔質拡散反射器を有するled |
Country Status (7)
Country | Link |
---|---|
US (1) | US7601989B2 (ja) |
EP (1) | EP2132790B1 (ja) |
JP (2) | JP5258872B2 (ja) |
KR (1) | KR101431247B1 (ja) |
CN (1) | CN101681957B (ja) |
TW (1) | TWI479673B (ja) |
WO (1) | WO2008117255A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101385810B1 (ko) * | 2006-05-19 | 2014-04-16 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | Cz 성장 동안에 실리콘 단결정의 측면에 의해 유도되는 응집된 점 결함 및 산소 클러스터 형성을 제어하는 방법 |
KR101427076B1 (ko) * | 2008-07-22 | 2014-08-07 | 삼성전자주식회사 | 반도체 발광소자 |
US10147843B2 (en) | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
US20100279437A1 (en) * | 2009-05-01 | 2010-11-04 | Koninklijke Philips Electronics N.V. | Controlling edge emission in package-free led die |
US8008683B2 (en) | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
DE102009006177A1 (de) * | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
DE102009033287A1 (de) * | 2009-07-15 | 2011-01-20 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
US8400064B2 (en) | 2009-09-09 | 2013-03-19 | Koninklijke Philips Electronics N.V. | Zener diode protection network in submount for LEDs connected in series |
DE112011101156T5 (de) * | 2010-04-01 | 2013-01-24 | Panasonic Corporation | Leuchtdiodenelement und Leuchtdiodenvorrichtung |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
CN102623579A (zh) * | 2011-01-28 | 2012-08-01 | 展晶科技(深圳)有限公司 | 半导体发光芯片制造方法 |
KR101550117B1 (ko) * | 2011-02-18 | 2015-09-03 | 에피스타 코포레이션 | 광전 소자 및 그 제조 방법 |
JP2013074245A (ja) * | 2011-09-29 | 2013-04-22 | Oki Electric Ind Co Ltd | 発光ダイオードの製造方法及び発光ダイオード |
KR101868537B1 (ko) | 2011-11-07 | 2018-06-19 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 발광 소자 패키지 |
KR101967836B1 (ko) * | 2012-12-14 | 2019-04-10 | 삼성전자주식회사 | 3차원 발광 소자 및 그 제조방법 |
TW201424059A (zh) * | 2012-12-14 | 2014-06-16 | Epistar Corp | 光電元件及其製造方法 |
KR102061563B1 (ko) | 2013-08-06 | 2020-01-02 | 삼성전자주식회사 | 반도체 발광소자 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
US10193018B2 (en) * | 2016-12-29 | 2019-01-29 | Intel Corporation | Compact low power head-mounted display with light emitting diodes that exhibit a desired beam angle |
KR102435409B1 (ko) * | 2018-01-04 | 2022-08-24 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
GB2597109B (en) * | 2020-07-16 | 2023-05-10 | Plessey Semiconductors Ltd | Strain relaxation layer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005005727A (ja) * | 2001-11-19 | 2005-01-06 | Sanyo Electric Co Ltd | 化合物半導体発光素子 |
US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
JP2005244201A (ja) * | 2004-01-28 | 2005-09-08 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
US20050161696A1 (en) * | 2004-01-28 | 2005-07-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and method for fabricating the same |
JP2006147787A (ja) * | 2004-11-18 | 2006-06-08 | Sony Corp | 発光素子及びその製造方法 |
CN100566490C (zh) * | 2005-03-14 | 2009-12-02 | 皇家飞利浦电子股份有限公司 | 多晶陶瓷结构中的磷光体和包括该磷光体的发光元件 |
JP4766966B2 (ja) * | 2005-09-07 | 2011-09-07 | 京セラ株式会社 | 発光素子 |
US7737455B2 (en) * | 2006-05-19 | 2010-06-15 | Bridgelux, Inc. | Electrode structures for LEDs with increased active area |
US7626210B2 (en) * | 2006-06-09 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED |
US8174025B2 (en) * | 2006-06-09 | 2012-05-08 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device including porous layer |
-
2007
- 2007-03-27 US US11/692,132 patent/US7601989B2/en active Active
-
2008
- 2008-03-27 KR KR1020097022387A patent/KR101431247B1/ko active IP Right Grant
- 2008-03-27 CN CN200880010085.4A patent/CN101681957B/zh active Active
- 2008-03-27 TW TW097111121A patent/TWI479673B/zh active
- 2008-03-27 EP EP20080737640 patent/EP2132790B1/en active Active
- 2008-03-27 JP JP2010500416A patent/JP5258872B2/ja active Active
- 2008-03-27 WO PCT/IB2008/051157 patent/WO2008117255A1/en active Application Filing
-
2013
- 2013-02-28 JP JP2013039169A patent/JP5456193B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP2132790A1 (en) | 2009-12-16 |
KR101431247B1 (ko) | 2014-08-20 |
JP2010522984A (ja) | 2010-07-08 |
TW200903861A (en) | 2009-01-16 |
WO2008117255A1 (en) | 2008-10-02 |
CN101681957B (zh) | 2012-05-30 |
US7601989B2 (en) | 2009-10-13 |
JP5258872B2 (ja) | 2013-08-07 |
KR20090125202A (ko) | 2009-12-03 |
EP2132790B1 (en) | 2015-05-13 |
US20080237619A1 (en) | 2008-10-02 |
TWI479673B (zh) | 2015-04-01 |
CN101681957A (zh) | 2010-03-24 |
JP2013102239A (ja) | 2013-05-23 |
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